Abstract: A radiation source having a fuel stream generator (110) that generates and directs a fuel stream (102) along a trajectory towards a plasma formation location (104). A pre-pulse laser radiation assembly directs a first beam of laser radiation (100) at the fuel stream at the plasma formation location to generate a modified fuel target (106). A main pulse laser radiation assembly directs a second beam of laser radiation (108) at the modified fuel target at the plasma formation location to generate a radiation generating plasma (117). A collector (122) collects the radiation and directs it along an optical axis (105) of the radiation source. The first beam of laser radiation being directed toward the fuel stream substantially along the optical axis.

Abstract: An EUV light source is disclosed herein which may comprise a droplet generator producing a stream of target material droplets, a first optical gain medium amplifying light on a first beam path without a seed laser providing a seed laser output to the first beam path, a second optical gain medium amplifying light on a second beam path without a seed laser providing a seed laser output to the second beam path, and a beam combiner combining light from the first beam path and the second beam path for interaction with a target material droplet to produce EUV light emitting plasma.

Abstract: In an aspect, an inspection method for detecting the presence or absence of a defect on an object, the object comprising a recess having a physical depth, is disclosed. The method includes directing radiation at the object, the radiation having a wavelength that is substantially equal to twice an optical depth of the recess, detecting radiation that is re-directed by the object or a defect on the object, and determining the presence or absence of a defect from the re-directed radiation.

Abstract: A lithographic apparatus comprising a source that generates a beam of radiation, a support structure supporting a patterning device, a substrate table for holding a substrate, and a projection system projecting the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further comprises a vibration measurement apparatus configured to measure relative vibration between the patterning device and the substrate during exposure of the target portion. A control apparatus adjusts power of the radiation beam to compensate for the effect of the measured relative vibration on the pattern projected onto the substrate.

Abstract: A fluid handling structure configured to supply immersion liquid to a space defined between a projection system and a facing surface facing the fluid handling structure, wherein the fluid handling structure has a main body with an undersurface, a moveable member moveable relative to the main body, and a self-regulating mechanism to maintain a gap of a certain size between a bottom surface of the moveable member and the facing surface independent of the size of a gap between the undersurface and the facing surface.

Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

Abstract: An actuator includes a coil; a cooling body configured to cool the coil; a quantity of heat transfer material fixedly arranged between the cooling body and the coil, and a mechanical attacher configured to attach the coil to the cooling body.

Abstract: A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.

Abstract: An extreme ultraviolet exposure apparatus includes a radiation system configured to supply a beam of extreme ultraviolet radiation; a support configured to support a patterning device, the patterning device configured to pattern the beam of extreme ultraviolet radiation according to a desired pattern; a substrate table having an area configured to support a substrate; a projection system configured to project the patterned beam of extreme ultraviolet radiation onto a target portion of the substrate, the projection system comprising a reflective optical system; wherein at least a part of the apparatus that during use of the apparatus is exposed to the beam of extreme ultraviolet radiation is coated with a coating, the coating comprising a metal oxide, or a photocatalyst, or a semiconductor, or any combination thereof.

Abstract: One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.

Abstract: A method of assessing a model of a substrate is presented. A scatterometry measurement is taken using radiation at a first wavelength. The wavelength of the radiation is then changed and a further scatterometry measurement taken. If the scatterometry measurements are consistent across a range of wavelengths then the model is sufficiently accurate. However, if the scatterometry measurements change as the wavelength changes then the model of the substrate is not sufficiently accurate.

Abstract: A vacuum system for extracting a stream of a multi-phase fluid from a photolithography tool comprises a pumping arrangement for drawing the fluid from the tool, and an extraction tank located upstream from the pumping arrangement for separating the fluid drawn from the tool into gas and liquid phases. The pumping arrangement comprises a first pump for extracting gas from the tank, and a second pump for extracting liquid from the tank. In order to minimize any pressure fluctuations transmitted from the vacuum system back to the fluid within the tool, a pressure control system maintains a substantially constant pressure in the tank by regulating the amounts of liquid and gas within the tank.

Abstract: Systems (and methods therefor) for generating EUV radiation that comprise an arrangement producing a laser beam directed to an irradiation region and a droplet source. The droplet source includes a fluid exiting an orifice and a sub-system having an electro-actuatable element producing a disturbance in the fluid. The electro-actuatable element is driven by a first waveform to produce droplets for irradiation to generate the EUV radiation, the droplets produced by the first waveform having differing initial velocities causing at least some adjacent droplets to coalesce as the droplets travel to the irradiation region, and a second waveform, different from the first waveform, to dislodge contaminants from the orifice.

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: In a discharge-produced plasma source, a pair of electrodes is charged using a transmission line. In an embodiment, a pair of transmission lines may be used, connected symmetrically to the electrodes. The impedance of the transmission lines, or the total impedance of the transmission lines, is equal to that of the discharge in an embodiment. Use of a transmission line provides longer discharge pulses with more consistent potential difference.

Abstract: An illumination source is optimized by changing the intensity and shape of the illumination source to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. An optimum mask may be determined by changing the magnitude and phase of the diffraction orders to form an image in the image plane that maximizes the minimum ILS at user selected fragmentation points while forcing the intensity at the fragmentation points to be within a small intensity range. Primitive rectangles having a size set to a minimum feature size of a mask maker are assigned to the located minimum and maximum transmission areas ad centered at a desired location. The edges of the primitive rectangle are varied to match optimal diffraction orders O(m,n). The optimal CPL mask OCPL(x,y) is then formed.

Abstract: A lithographic projection apparatus is disclosed which includes a cleaning station. Several embodiments of the cleaning station are disclosed. In an embodiment, measures are taken to avoid contact of a cleaning fluid with the final element of the projection system. In an embodiment, measures are taken to avoid foaming of the cleaning fluid. The use of a thermally isolated island is also disclosed as well as its optimal position.

Abstract: A position control system to control the position of a movable object, including a position measurement system configured to determine an actual position related quantity of the movable object; a set-point generator to provide a position related set-point signal of the movable object; a comparator to provide an error signal on the basis of a comparison of the actual position related quantity and the position related set-point signal, a controller to provide a control signal on the basis of the error signal, a feed-forward device to provide a feed-forward signal on the basis of the position related set-point signal, and one or more actuators to act on the movable object on the basis of the control signal and the feed-forward signal, wherein the feed-forward device includes a disturbance force correction table including estimations of disturbance forces exerted on the movable object in dependence of a position of the movable object.

Abstract: An overlay measurement apparatus has a polarized light source for illuminating a sample with a polarized light beam and an optical system to capture light that is scattered by the sample. The optical system includes a polarizer for transmitting an orthogonal polarization component that is orthogonal to a polarization direction of the polarized light beam. A detector measures intensity of the orthogonal polarization component. A processing unit is connected to the detector, and is arranged to process the orthogonal polarization component for overlay metrology measurement using asymmetry data derived from the orthogonal polarization component.