Abstract: A lithographic apparatus includes an illumination system, an array of individually controllable elements, a projection system, and a control system. The illumination system conditions a radiation beam. The array of individually controllable elements modulates the cross-section of the radiation beam. The projection system projects the modulated radiation beam onto a target portion of a substrate. The control system calculates a pattern that is to be formed on the array of individually controllable elements. The calculation includes an adjustment of the pattern, such that its focal plane is shifted in response to a measured separation between the target portion of the substrate and a focal plane of the projection system.

Abstract: A lithographic patterning device deformation monitoring apparatus (38) comprising a radiation source (40), an imaging device (42), and a processor (50). The radiation source being configured to direct a plurality of beams of radiation (41) with a predetermined diameter towards a lithographic patterning device (MA) such that they are reflected by the patterning device. The imaging detector configured to detect spatial positions of the radiation beams (41?) after they have been reflected by the patterning device. The processor configured to monitor the spatial positions of the radiation beams and thereby determine the presence of a patterning device deformation. The imaging detector has an collection angle which is smaller than a minimum angle of diffraction of the radiation beams.

Abstract: An exposure apparatus including a projection system configured to project a plurality of radiation beams onto a target; a movable frame that is at least rotatable around an axis; and an actuator system configured to displace the movable frame to an axis away from an axis corresponding to the geometric center of the movable frame and to cause the frame to rotate around an axis through the center of mass of the frame.

Abstract: A lithographic apparatus component, such as a metrology system or an optical element (e.g., a mirror) is provided with a temperature control system for controlling deformation of the component. The control system includes channels provided close to a surface of the component through which a two phase cooling medium is supplied. The metrology system measures a position of at least a moveable item with respect to a reference position and includes a metrology frame connected to the reference position. An encoder is connected to the moveable item and constructed and arranged to measure a relative position of the encoder with respect to a reference grid. The reference grid may be provided directly on a surface of the metrology frame. A lithographic projection apparatus may have the metrology system for measuring a position of the substrate table with respect to the projection system.

Abstract: A lithographic apparatus is disclosed in which a specific coating is applied to a specific surface. The coating is made from at least 99 wt % of at least one of the following: a transition metal oxide; a poor metal oxide, sulfide or selenide; a compound with the formula ATiOn where A is an element from Group 2 of the Periodic Table; or TiO2 doped with a metal from Group 3, 5 or 7 of the Periodic Table, wherein the coating is less than or equal to 49 nm thick.

Abstract: A radiation source for generating EUV from a stream of molten metal fuel droplets by LPP (Laser Produced Plasma) or (Dual Laser Plasma) has a fuel droplet generator arranged to provide a stream of droplets of fuel and at least one laser configured to vaporise at least some of said droplets of fuel, whereby radiation is generated. The fuel droplet generator has nozzle, fuel supply line, and reservoir, with a pumping device arranged to supply a flow of molten metal fuel from the reservoir through the fuel feed line and out of the nozzle as a stream of droplets. The fuel droplet generator has a replaceable filter assembly in the fuel feed line, arranged to filter the molten metal fuel in use, to deter nozzle blockage by solid particulate impurities in the fuel.

Abstract: In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: A coating is disclosed. The coating may be used in an apparatus having a radiation source, e.g. a lithographic apparatus. The coating comprises the elements Si, O, F and, optionally, C and H. An article is also disclosed. The article may be any one of the group consisting of a substrate table, an optical element, a shutter member, a sensor, a projection system, and a confinement structure. At least a portion of a surface of the article is coated with a coating. The coating comprises the elements Si, O, F and, optionally, C and H. The coating may comprise the elements Si, O, C and H.

Abstract: An imprint lithography method is disclosed that includes bringing an imprint template into contact with imprintable medium provided on a substrate, and directing actinic radiation at the imprintable medium, the actinic radiation being oriented such that it is not perpendicularly incident upon a patterned surface of the imprint template.

Abstract: A lithographic apparatus comprises an object table for receiving an object, an actuator for moving the object table and a handler for transferring the object to or from the object table. The apparatus is provided with a controller operable connected with the actuator and/or the handler. The controller is programmed and/or arranged to drive the actuator and the handler so as to provide that the object table and the handler substantially follow each other in a direction perpendicular to a transfer direction during transfer in the transfer direction of the object to or from the object table.

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract: In an immersion lithography apparatus in which immersion liquid is supplied to a localized space, the space is substantially polygonal in plan substantially parallel to the substrate. In an embodiment, two corners of the space have a radius of curvature no greater than the width of a transition zone between the space configured to contain liquid and a surrounding configured not to contain liquid.

Abstract: A radiation source (SO) suitable for providing a beam of radiation to an illuminator of a lithographic apparatus. The radiation source comprises a nozzle (128) configured to direct a stream of fuel droplets along a trajectory (140) towards a plasma formation location (212). The radiation source is configured to receive a first amount of radiation (205) such that, in use, the first amount of radiation is incident on a fuel droplet at the plasma formation location. The first amount of radiation transfers energy to the fuel droplet to generate a radiation generating plasma that emits a second amount of radiation (132). The radiation source further comprises an alignment detector having a first sensor arrangement (122) and a second sensor arrangement (134). The first sensor arrangement is configured to measure a property of a third amount of radiation (205a) that is indicative of a focus position of the first amount of radiation.

Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

Abstract: A manifold is provided between an outlet of a fluid supply system for an immersion lithographic apparatus and a separator. The manifold is provided with a pressure sensor which passes the measured pressure in the manifold to a mass flow controller. The mass flow controller controls a leak flow into the manifold based on the measured pressure in the manifold so as to maintain a desired pressure in the manifold.

Abstract: A lithographic apparatus includes a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate on a central area; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate in a first direction. The apparatus further includes a positioning device to position the substrate table, wherein the positioning device includes a plurality of actuators arranged to, in use, exert forces to position the substrate table, the forces substantially being directed in a plane substantially perpendicular to the first direction and wherein the plurality of actuators are arranged outside a central volume of the substrate table, the central volume being obtained by projecting the central area along the first direction.

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.

Abstract: An illumination system having an array of individually controllable optical elements is disclosed, wherein each element is moveable between a plurality of orientations which may be selected in order to form desired illumination modes. The illumination system includes a controller to control orientation of one or more of the elements, the controller configured to apply force to the one or more elements which at least partially compensates for force applied to the one or more elements by a burst of radiation incident upon the one or more elements.