Patents Assigned to ASML Netherlands
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Patent number: 8885150Abstract: A scatterometer, configured to measure a property of a substrate, includes a radiation source which produces a radiation spot on a target formed on the surface of the substrate, the size of the radiation spot being smaller than the target in one direction along the target, the position of the radiation spot being moved along the surface in a series of discrete steps. A detector detects a spectrum of the radiation beam reflected from the target and produces measurement signals representative of the spectrum corresponding to each position of the radiation spot. A processor processes the measurement signals produced by the detector corresponding to each position of the radiation spot and derives a single value for the property.Type: GrantFiled: February 18, 2009Date of Patent: November 11, 2014Assignee: ASML Netherlands B.V.Inventors: Henricus Petrus Maria Pellemans, Arie Jeffrey Den Boef
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Patent number: 8887105Abstract: The preset invention provides methods, systems and computer program product for selection of an optimum set of patterns to calibrate a lithography model so that the model can predict imaging performance of a lithography apparatus/system more accurately and reliably without being prohibitively expensive in terms of using computational and metrology resources and time. The method is based on modeling sensitivity of the calibration patterns to measurement noise. In one aspect of the present invention, a method is disclosed, comprising: identifying a model of at least a portion of a lithographic process; identifying a set of patterns for calibrating the model; and, estimating measurement noise associated with the set of patterns.Type: GrantFiled: October 26, 2012Date of Patent: November 11, 2014Assignee: ASML Netherlands B.V.Inventors: Antoine Jean Bruguier, Wenjin Shao, Song Lan
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Patent number: 8887104Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare. Some of the system-specific effects included in the simulation are: a flare effect due to reflection from black border of a mask, a flare effect due to reflection from one or more reticle-masking blades defining an exposure slit, a flare effect due to overscan, a flare effect due reflections from a gas-lock sub-aperture of a dynamic gas lock (DGL) mechanism, and a flare effect due to contribution from neighboring exposure fields.Type: GrantFiled: September 1, 2011Date of Patent: November 11, 2014Assignee: ASML Netherlands B.V.Inventors: Hua-Yu Liu, Jiangwei Li, Luoqi Chen, Wei Liu, Jiong Jiang
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Publication number: 20140327893Abstract: An immersion lithographic apparatus is disclosed in which at least a part of the liquid supply system (which provides liquid between the projection system and the substrate) is moveable in a plane substantially parallel to a top surface of the substrate during scanning. The part is moved to reduce the relative velocity between that part and the substrate so that the speed at which the substrate may be moved relative to the projection system may be increased.Type: ApplicationFiled: July 14, 2014Publication date: November 6, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Martinus Hendrikus Antonius LEENDERS, Nicolaas Rudolf Kemper, Joost Jeroen Ottens
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Publication number: 20140327908Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.Type: ApplicationFiled: July 18, 2014Publication date: November 6, 2014Applicant: ASML Netherlands B.V.Inventors: Marcus Adrianus VAN DE KERKHOF, Maurits VAN DER SCHAAR, Andreas FUCHS, Martyn John COOGANS
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Patent number: 8876346Abstract: An illumination system for a lithographic or inspection apparatus. A plurality of optical waveguides transmit radiation from the illumination source to an output. A switching system enables selective control of one or more subsets of the optical waveguides. An inspection method uses an illumination system and inspection and lithographic apparatuses comprise an illumination system. In one example, the optical waveguides and switching system are replaced by a plurality of parallel optical bandpass filter elements. The optical bandpass filter elements each only transmit a predetermined wavelength or a band of wavelengths of radiation. At least two of the parallel optical bandpass filter elements each being operable to transmit a different wavelength or band of wavelengths.Type: GrantFiled: June 6, 2012Date of Patent: November 4, 2014Assignee: ASML Netherlands B.V.Inventor: Richard Quintanilha
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Patent number: 8879044Abstract: A lithographic device includes a cooling device for removing heat from a motor. The cooling device has a cooling element provided in thermal contact with at least part of the motor. The cooling device further has a cooling duct assembly with a supply duct to supply a cooling fluid to the cooling element, and a discharge duct to discharge the cooling fluid from the cooling element. A pump causes the cooling fluid to flow through at least part of the cooling duct assembly. A flow control device controls a flow rate of the cooling fluid through at least part of the cooling duct assembly, to maintain a predetermined average temperature of the cooling fluid in the cooling element.Type: GrantFiled: March 17, 2011Date of Patent: November 4, 2014Assignee: ASML Netherlands B.V.Inventor: Frank Auer
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Patent number: 8872144Abstract: Focus of a laser beam on a target in a Laser Produced Plasma (LPP) Extreme Ultraviolet (EUV) light source is maintained by focusing reflected light from the target illuminated by a laser source, sampling the focused reflected light in a plurality of planes at different optical path lengths, and comparing the image sizes of the focused reflected light at the plurality of planes to determine a correction signal to correct the focus of the laser source. In an embodiment, the focused reflected light is split into a two optical paths of differing optical path lengths, with each optical path directed to a sensing device at an imaging plane. Since each of the optical paths is of a different length, the images of the target taken by the sensing device at the imaging plane will be of different sizes. By comparing the relative sizes of the target images from the optical paths, a correction signal is produced to correct the focus of the laser source.Type: GrantFiled: September 24, 2013Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventor: Igor V. Fomenkov
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Patent number: 8874423Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.Type: GrantFiled: October 28, 2013Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Wenjin Shao, Ronaldus Johannes Gijsbertus Goossens, Jun Ye, James Patrick Koonmen
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Patent number: 8875078Abstract: A library of model diffraction patterns is generated where each represents a diffraction pattern expected from a target structure defined by a set of parameters and having a first part and a second part, the first part comprising a scattering object. The target structure is defined. The scattering effect of the first part of the target structure is defined by a set of first part parameters, for a plurality of different sets of first part parameters. The scattering effect of the second part of the target structure defined by a set of second part parameters, for a plurality of different sets of second part parameters. The results of the calculations is used to calculate the model diffraction patterns.Type: GrantFiled: June 29, 2012Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventors: Maxim Pisarenco, Irwan Dani Setija
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Patent number: 8872123Abstract: Described herein are embodiments of a method to control energy dose output from a laser-produced plasma extreme ultraviolet light system by adjusting timing of fired laser beam pulses. During stroboscopic firing, pulses are timed to lase droplets until a dose target of EUV has been achieved. Once accumulated EUV reaches the dose target, pulses are timed so as to not lase droplets during the remainder of the packet, and thereby prevent additional EUV light generation during those portions of the packet. In a continuous burst mode, pulses are timed to irradiate droplets until accumulated burst error meets or exceeds a threshold burst error. If accumulated burst error meets or exceeds the threshold burst error, a next pulse is timed to not irradiate a next droplet. Thus, the embodiments described herein manipulate pulse timing to obtain a constant desired dose target that can more precisely match downstream dosing requirements.Type: GrantFiled: January 10, 2013Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventors: James Crouch, Robert Jacques, Matthew R. Graham, Andrew Liu
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Patent number: 8872122Abstract: Described herein are embodiments of a method to control energy dose output from a laser-produced plasma extreme ultraviolet light system by adjusting timing of fired laser beam pulses. During stroboscopic firing, pulses are timed to lase droplets until a dose target of EUV has been achieved. Once accumulated EUV reaches the dose target, pulses are timed so as to not lase droplets during the remainder of the packet, and thereby prevent additional EUV light generation during those portions of the packet. In a continuous burst mode, pulses are timed to irradiate droplets until accumulated burst error meets or exceeds a threshold burst error. If accumulated burst error meets or exceeds the threshold burst error, a next pulse is timed to not irradiate a next droplet. Thus, the embodiments described herein manipulate pulse timing to obtain a constant desired dose target that can more precisely match downstream dosing requirements.Type: GrantFiled: January 10, 2013Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventors: Alexander Schafgans, James Crouch, Matthew R. Graham, Steven Chang, Paul Frihauf, Andrew Liu, Wayne Dunstan
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Patent number: 8872143Abstract: Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.Type: GrantFiled: March 14, 2013Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventors: Robert J. Rafac, Yezheng Tao
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Publication number: 20140313494Abstract: In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be exposed to radiation when immersed in liquid (e.g., under the same conditions as the substrate will be exposed to radiation). By having a surface of an absorption element of the sensor, that is to be in contact with liquid, formed of no more than one metal type, long life of the sensor may be obtained.Type: ApplicationFiled: April 25, 2014Publication date: October 23, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Timotheus Franciscus SENGERS, Sjoerd Nicolaas Lambertus Donders, Hans Jansen, Arjen Boogaard
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Publication number: 20140313496Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.Type: ApplicationFiled: September 21, 2012Publication date: October 23, 2014Applicant: ASML Netherlands B.V.Inventors: Arjan Gijsbertsen, Hubertus Antonius Geraets, Bart Peter Bert Segers, Natalia Victorovna Davydova
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Publication number: 20140317580Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.Type: ApplicationFiled: May 20, 2014Publication date: October 23, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Jun YE, Yu Cao, Hanying Feng
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Patent number: 8866111Abstract: A radiation source for generating EUV from a stream of molten fuel droplets by LPP (Laser Produced Plasma) or (Dual Laser Plasma) has a fuel droplet generator arranged to provide a stream of droplets of fuel and at least one laser configured to vaporize at least some of the droplets of fuel, whereby radiation is generated. The fuel droplet generator has a nozzle, a feed chamber, and a reservoir, with a pumping device arranged to supply a flow of fuel in molten state from the reservoir through the feed chamber and out of the nozzle as a stream of droplets. The feed chamber has an outer face in contact with a drive cavity filled with a liquid, and the liquid is driven to oscillate by a vibrator with the oscillation transmissible to the molten fuel in the feed chamber from the outer face of the feed chamber through the liquid.Type: GrantFiled: July 4, 2012Date of Patent: October 21, 2014Assignee: ASML Netherlands B.V.Inventors: Erik Roelof Loopstra, Johan Frederik Dijksman
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Patent number: 8866110Abstract: Techniques are described that enhance power from an extreme ultraviolet light source with feedback from a target material that has been modified prior to entering a target location into a spatially-extended target distribution or expanded target. The feedback from the spatially-extended target distribution provides a nonresonant optical cavity because the geometry of the path over which feedback occurs, such as the round-trip length and direction, can change in time, or the shape of the spatially-extended target distribution may not provide a smooth enough reflectance. However, it may be possible that the feedback from the spatially-extended target distribution provides a resonant and coherent optical cavity if the geometric and physical constraints noted above are overcome. In any case, the feedback can be generated using spontaneously emitted light that is produced from a non-oscillator gain medium.Type: GrantFiled: March 6, 2014Date of Patent: October 21, 2014Assignee: ASML Netherlands B.V.Inventors: Yezheng Tao, Robert Jay Rafac, Igor V. Fomenkov, Daniel J. W. Brown
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Patent number: 8867020Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application.Type: GrantFiled: September 19, 2011Date of Patent: October 21, 2014Assignee: ASML Netherlands B.V.Inventors: Hendrik Jan Hidde Smilde, Patrick Warnaar
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Patent number: 8868387Abstract: A set of parameters used in a model of a spectrometer includes free parameters and fixed parameters. A first set of values for the parameters is set and the model is used to generate a first spectrum. A value of one of the fixed parameters is changed and a second spectrum is generated. An inverse of the model of the spectrometer is then applied to the second spectrum to generate a set of values for the parameters, the values being the same as the first set of values except for one or more of the free parameters. If the free parameter has significantly changed the fixed parameter is designated a free parameter.Type: GrantFiled: October 8, 2008Date of Patent: October 21, 2014Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Jouke Krist, Willem Jan Grootjans