Abstract: An electromagnetic compound lens may be configured to focus a charged particle beam. The compound lens may include an electrostatic lens provided on a secondary optical axis and a magnetic lens also provided on the secondary optical axis. The magnetic lens may include a permanent magnet. A charged particle optical system may include a beam separator configured to separate a plurality of beamlets of a primary charged particle beam generated by a source along a primary optical axis from secondary beams of secondary charged particles. The system may include a secondary imaging system configured to focus the secondary beams onto a detector along the secondary optical axis. The secondary imaging system may include the compound lens.

Abstract: An electrostatic chuck control system configured to be utilized during an inspection process of a wafer, the electrostatic chuck control system comprising an electrostatic chuck of a stage configured to be undocked during the inspection process, wherein the electrostatic chuck comprises a plurality of components configured to influence an interaction between the wafer and the electrostatic chuck during the inspection process, a first sensor configured to generate measurement data between at least some of the plurality of components and the wafer, and a controller including circuitry configured to receive the measurement data to determine characteristics of the wafer relative to the electrostatic chuck and to generate adjustment data to enable adjusting, while the stage is undocked, at least some of the plurality of components based on the determined characteristics.

Abstract: An apparatus includes a first charged particle beam manipulator positioned in a first layer configured to influence a charged particle beam and a second charged particle beam manipulator positioned in a second layer configured to influence the charged particle beam. The first and second charged particle beam manipulators may each include a plurality of electrodes having a first set of opposing electrodes and a second set of opposing electrodes. A first driver system electrically connected to the first set may be configured to provide a plurality of discrete output states to the first set. A second driver system electrically connected to the second set may be configured to provide a plurality of discrete output states to the second set. The first and second charged-particle beam manipulators may each comprise a plurality of segments; and a controller having circuitry configured to individually control operation of each of the plurality of segments.

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

Abstract: Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.

Abstract: A multi-beam apparatus for multi-beam inspection with an improved source conversion unit providing more beamlets with high electric safety, mechanical availability and mechanical stabilization has been disclosed. The source-conversion unit comprises an image-forming element array having a plurality of image-forming elements, an aberration compensator array having a plurality of micro-compensators, and a pre-bending element array with a plurality of pre-bending micro-deflectors. In each of the arrays, adjacent elements are placed in different layers, and one element may comprise two or more sub-elements placed in different layers. The sub-elements of a micro-compensator may have different functions such as micro-lens and micro-stigmators.

Abstract: Disclosed is an actuator unit for positioning an optical element, comprising a first reluctance actuator comprising a first stator part and a first mover part separated by a gap in a first direction. The first mover part is constructed and arranged to be connected to the optical element and for moving the optical element. The first stator part is constructed and arranged to exert a magnetic force on the first mover part along a first line of actuation. The first mover part is movable relative to the first stator part in the first direction. The first stator part and the first mover part are constructed and arranged such that the first line of actuation is, in operational use, moving along with the first mover part in a second direction perpendicular to the first direction, for at least a predetermined movement range of the first mover part in the second direction.

Abstract: Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

Abstract: The invention provides a method for calibration of an optical measurement system, which may be a heterodyne interferometer system, wherein a first optical axis and a second optical axis have a different optical path length, the method comprises: ?measuring a first measurement value along the first optical axis using a first measurement beam, ?measuring a second measurement value along the second optical axis using a second measurement beam, ?changing a wavelength of the first measurement beam and the second measurement beam, ?measuring a further first measurement value along the first optical axis using the first measurement beam with changed wavelength, measuring a further second measurement value along the second optical axis using the second measurement beam with changed wavelength, ?determining a cyclic error of the optical measurement system on the basis of the measured values, and ?storing a corrective value based on the cyclic error.

Abstract: A detector includes a set of sensing elements, first section circuitry communicatively coupling a first set of sensing elements to an input of first signal processing circuitry, second section circuitry communicatively coupling a second set of sensing elements to an input of second signal processing circuitry, and interconnection circuitry communicatively coupling an output of the first signal processing circuitry to an output of the second signal processing circuitry. The interconnection circuitry may include an interconnection layer having interconnection switching elements communicatively coupled to outputs of analog signal paths of the detector. Interconnection switching elements may communicatively couple the outputs of adjacent analog signal paths. The detector may also include signal processing circuitry that includes a plurality of converters. The interconnection circuitry may be configured to selectively couple outputs of the first and second signal processing circuitry to the converters.

Abstract: An apparatus for measuring a height of a substrate for processing in a lithographic apparatus is disclosed. The apparatus comprises a first sensor for sensing a height of the substrate over a first area. The apparatus also comprises a second sensor for sensing a height of the substrate over a second area. The apparatus further comprises a processor adapted to normalize first data corresponding to a signal from the first sensor with a second sensor footprint to produce a first normalized height data, and to normalize second data corresponding to a signal from the second sensor with a first sensor footprint to produce a second normalized height data. The processor is adapted to determine a correction to a measured height of the substrate based on a difference between the first and second normalized height data.

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Abstract: The invention provides an assembly comprising a cryostat and a flat coil layer of superconducting coils for use with a magnetic levitation and/or acceleration motor system of a lithographic apparatus. The cryostat comprises two insulation coverings. The coil layer is arranged between the two coverings. The coverings each comprise an inner plate configured to be cryocooled and an outer plate parallel to the inner plate, and an insulation system with a vacuum layer between the inner and outer plate. The insulation system of said covering comprises a layers of circular bodies, the central axes of these bodies extending perpendicular to the inner and outer plate, and is configured to provide a layer of point contacts between two layers of circular bodies or between a layer of circular bodies and the inner and/or outer plate.

Abstract: Disclosed is a method of determining a process window within a process space comprising obtaining contour data relating to features to be provided to a substrate across a plurality of layers, for each of a plurality of process conditions associated with providing the features across said plurality of layers and failure mode data describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine a failure count for each process condition; and the process window is determined by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.

Abstract: A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

Abstract: An interface plate for mounting an apparatus or an assembly of an apparatus to a floor or floor plate is described, the interface plate comprising: an install block having an install surface configured to receive an interface surface of the apparatus or assembly; an adjustment mechanism configured to adjust a position or orientation of the install block relative to the floor or floor plate; and a mounting mechanism configured to rigidly mount the install block to the floor or floor plate.

Abstract: A system for measuring the difference between a property of a first target and a property of a second target, the system comprising a first member and a second member, wherein the first member comprises a first pattern, and the speed of rotation of the first member is configured to be based on the property of the first target; and the second member comprises a second pattern wherein, the speed of rotation of the second member is configured to be based on the property of the second target, further wherein the first and second pattern are angularly-varying and are configured to generate an interference pattern by their interaction when the first and second members have a relative difference in their rotational speeds, the interference pattern being indicative of the magnitude of this difference.

Abstract: An emitter is configured to emit charged particles. The emitter comprises a body, a metal layer and a charged particle source layer. The body has a point. The metal layer is of a first metal on at least the point. The charged particle source layer is on the metal layer. The point comprises a second metal other than the first metal.

Abstract: The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.