Abstract: The invention provides an apparatus configured for determining a distance of the apparatus to an object according to the principle of triangulation. The apparatus comprises a transmissive device with a predefined distance between a first surface and a second surface of the transmissive device, and a detector that is configured to receive at least a portion of a radiation beam after interaction with the transmissive device and the object. The first surface is arranged to reflect a first part of the radiation beam, and the second surface is arranged to reflect a second part of the radiation beam. The predefined distance is used for determining the distance of the apparatus to the object.

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

Abstract: Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.

Abstract: A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a plurality of first values of a first parameter based on successive measurements associated with a first operation of a process step in the semiconductor manufacturing process; using a causal convolutional neural network to determine a predicted value of a second parameter based on the first values; and using the predicted value of the second parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method includes obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of the alignment data, the one or more dominant orthogonal components including a number of orthogonal components which together sufficiently describes variance in the alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of the one or more dominant orthogonal components. Alternatively, the method includes, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if the sensitivity metric is above a sensitivity threshold.

Abstract: A method and apparatus for selecting patterns for training or calibrating models related to semiconductor manufacturing. The method includes obtaining a first set of patterns; representing each pattern of the first set of patterns in a representation domain, the representation domain corresponding to electromagnetic functions; and selecting a second set of patterns from the first set of patterns based on the representation domain.

Abstract: A surface treatment device for treating a surface of a substrate support, wherein the surface treatment device comprises a contacting surface that is configured to contact the surface of the substrate support. The contacting surface is configured with at least a first contour with a first centre of curvature and a second contour with a second centre of curvature, wherein the first centre of curvature and the second centre of curvature are non-coincident points.

Abstract: Disclosed is a method for measuring a target located on a substrate beneath at least one layer. The method comprises exciting said at least one layer with pump radiation comprising at least one pump wavelength, so as to generate an acoustic wave within said at least one layer which reflects of said target thereby generating an acoustic replica of said target at a surface of said substrate and illuminating said acoustic replica with probe radiation comprising at least one probe wavelength and capturing the resultant scattered probe radiation, scattered from the acoustic replica. One or both of said exciting step and said illuminating step comprises generating Surface Plasmon Polaritons (SPPs) on residual topography of said at least one layer resultant from said target.

Abstract: Disclosed is a method of determining a correction for a measurement of a target and an associated apparatus. The measurement is subject to a target-dependent correction parameter which has a dependence the target and/or a stack on which the target is comprised. The method comprises obtaining first measurement data relating to a measurement of a fiducial target, said first measurement data comprising at least a first and second set of intensity parameter values: and second measurement data relating to a measurement of the fiducial target, the second measurement data comprising a third set of intensity parameter values. A target-invariant correction parameter is determined from said first measurement data and second measurement data. the target-invariant correction parameter being a component of the target-dependent correction parameter which is not dependent on the target and/or a stack: and the correction is determined from said target-in-variant correction parameter.

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

Abstract: Methods and systems for determining a model configured to predict values of physical characteristics (e.g., overlay, CD) associated with a patterned substrate measured using different measurement tools. The method involves obtaining a first set of measured data for a first one or more patterned substrates using a first one or more measurement tools, and reference measurements of a physical characteristic. Also, a second set of measured data and virtual data for a second one or more patterned substrates measured using a second one or more measurement tools is obtained. A set of mapping functions between the second set and the virtual data are generated. The set of mapping functions is used to convert the first set. Then, a model is determined based on the reference measurements and the converted data such that the model predicts values of the physical characteristic that are within an acceptable threshold of the reference measurements.

Abstract: An improved method of performing a self-diagnosis of a charged particle inspection system is disclosed. An improved method comprises triggering a self-diagnosis based on output data of the charged particle inspection system; in response to the triggering of the self-diagnosis, receiving diagnostic data of a sub-system of the charged particle inspection system; identifying an issue associated with the output data based on the diagnostic data of the sub-system; and generating a control signal to adjust an operation parameter of the sub-system according to the identified issue.

Abstract: An optical fiber, manufacturing intermediate for forming an optical fiber and a method for forming an optical fiber. The method includes providing a manufacturing intermediate having an elongate body and having an aperture extending through the elongate body along an axial dimension of the elongate body, a boundary of the aperture defining an internal surface of the manufacturing intermediate. The method further includes etching the internal surface of the manufacturing intermediate using an etching substance, and drawing the manufacturing intermediate along the axial dimension so as to form the optical fiber.

Abstract: A method of manufacturing a membrane assembly for EUV lithography, wherein a layer which forms at least part of a pellicle membrane is provided after one or more etching steps which define a pellicle border holding the pellicle membrane. Also provided is a pellicle substrate, the substrate including: a stack having a front face and back face, wherein one or more layers on the back face of the stack have been selectively removed to define a pellicle border region for holding the pellicle membrane before the layer which forms at least part of a pellicle membrane has been provided.

Abstract: A method of protecting a component of a lithographic apparatus, the method including the steps of: providing a protective cover which is shaped to protect at least part of said component, the protective cover having a contact surface which is arranged to adhere to a first surface of at least part of said lithographic apparatus or said component; and bringing the protective cover into proximity with the component so as to cause the contact surface to adhere to the lithographic apparatus or said component and remain adhered without the application of external force. It is also provided a patterning device for use in a lithographic apparatus and a lithographic apparatus.

Abstract: A positioning system for moving or positioning a moveable object, the system including: a dynamic support system including a reaction mass, a first support, a first spring system to support the reaction mass from the first support, a second support, a second spring system to support the first support from the second support, and a damping system to provide damping to the dynamic support system; and an actuator for generating a driving force between the moveable object and the reaction mass for moving or position the object, wherein a first eigenfrequency and a second eigenfrequency of the dynamic support system are substantially the same.

Abstract: Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming a dielectric layer that includes a plurality of burls for supporting an object. The example method can further include forming an electrostatic layer that includes one or more electrodes. The example method can further include generating, using the electrostatic layer, an electrostatic force to electrostatically clamp the object to the plurality of burls in response to an application of one or more voltages to the one or more electrodes. In some aspects, a first magnitude of the electrostatic force in a first region of the dielectric layer can be different than a second magnitude of the electrostatic force in a second region of the dielectric layer. For example, the first magnitude and the second magnitude can be part of a linear, non-linear, or stepped (e.g., multi-level) electrostatic force gradient.

Abstract: A temperature conditioning system using conditioning liquid to condition a temperature of an object, the system including a conditioning conduit, a return conduit, a supply chamber, and a discharge chamber, wherein the temperature conditioning system is arranged to provide a static pressure difference between the supply chamber outlet and the discharge chamber inlet to create a flow through the conditioning conduit. A lithography apparatus and a method of temperature conditioning an object is also described.

Abstract: The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: providing an initial prediction model including a plurality of model parameters to one or more remote locations; receiving at least one updated model parameter from the one or more remote locations, the at least one model parameter is updated by training the initial prediction model with local data at the one or more remote locations; determining aggregated model parameters based on the at least one updated model parameter received from the one or more remote locations; and adjusting the initial prediction model based on the aggregated model parameters, the adjusted prediction model being operable to configure the semiconductor manufacturing process.