Abstract: The invention provides a wavelength tracking system comprising a wavelength tracking unit and an interferometer system. The wavelength tracking unit has reflection surfaces at stabile positions providing a first reflection path with a first path length and a second reflection path with a second path length. The first path length is substantially larger than the second path length.

Abstract: A fluid handling structure for a lithographic apparatus, the structure having: an aperture for the passage therethrough of a beam; a first part; and a second part, wherein the first and/or second part define a surface for the extraction of immersion fluid, relative movement between the first and second parts is effective to change a position of fluid flow into or out of the surface relative to the aperture, and the first or second part has at least one through-hole for the fluid flow and the other of the first or second part has at least one opening for the fluid flow, the at least one through-hole and at least one opening being in fluid communication when aligned, the relative movement allowing alignment of the at least one opening with different ones of the through-hole to change the position of the fluid flow into or out of the surface.

Abstract: A method of unloading an object from a support table, the object clamped to the support table during an exposure process by: applying a first pressure to a central region of the support table under a central portion of the object; and applying a second pressure to a peripheral region of the support table under a peripheral portion of the object, wherein during clamping the first pressure and the second pressure are controlled such that liquid is retained between the object and a seal member that is positioned radially between the central region and the peripheral region at an upper surface of the support table and protrudes towards the object, the method including: increasing the first pressure towards ambient pressure; removing at least some of the liquid retained between the object and the seal member by decreasing the second pressure; and increasing the second pressure towards the ambient pressure.

Abstract: A system includes an illumination system, an optical element, and a detector. The optical system is implemented on a substrate. The illumination system includes first and second sources and first and second generators. The illumination system generates a beam of radiation. The first and second sources generate respective first and second different wavelength bands. The first and second resonators are optically coupled to respective ones of the first and second sources and narrow respective ones of the first and second wavelength bands. The optical element directs the beam toward a target structure. The detector receives radiation from the target structure and to generate a measurement signal based on the received radiation.

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

Abstract: A charged particle assessment tool including: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes, each capture electrode adjacent a respective one of the beam apertures, configured to capture charged particles emitted from the sample.

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Abstract: An apparatus comprising a set of pixels configured to shape a beamlet approaching the set of pixels and a set of pixel control members respectively associated with each of the set of pixels, each pixel control member being arranged and configured to apply a signal to the associated pixel for shaping the beamlet.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

Abstract: Substrate tables for lithography and methods of handling a substrate. In one arrangement, a substrate table includes one or more membranes. An actuation system deforms each membrane to change a height of a portion of the membrane. In another arrangement, a substrate table includes one or more membranes and a clamping system for clamping a substrate to the substrate table, wherein the clamping deforms each membrane by pressing the substrate against the membrane.

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

Abstract: A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising; exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

Abstract: A pellicle membrane for a lithographic apparatus, the membrane including a matrix including a plurality of inclusions distributed therein. A method of manufacturing the pellicle membrane, a lithographic apparatus including the pellicle membrane, a pellicle assembly for use in a lithographic apparatus including the membrane, as well as the use of the pellicle membrane in a lithographic apparatus or method.

Abstract: A method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a substrate, the method including: obtaining a delta image which relates to a difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form the first and second features; selecting a plurality of pixels within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

Abstract: A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including a main body having a main body surface; a plurality of burls projecting from the main body surface to support the substrate spaced apart from the main body surface; and a liquid control structure provided in a peripheral region of the main body surface and configured to cause liquid to preferentially flow toward the periphery of the main body surface.

Abstract: A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Abstract: A method of extracting a feature from a data set includes iteratively extracting a feature from a data set based on a visualization of a residual pattern within the data set, wherein the feature is distinct from a feature extracted in a previous iteration, and the visualization of the residual pattern uses the feature extracted in the previous iteration. Visualizing the data set using the feature extracted in the previous iteration may include showing residual patterns of attribute data that are relevant to target data. Visualizing the data set using the feature extracted in the previous iteration may involve adding cluster constraints to the data set, based on the feature extracted in the previous iteration. Additionally or alternatively, visualizing the data set using the feature extracted in the previous iteration may involve defining conditional probabilities conditioned on the feature extracted in the previous iteration.