Abstract: An inspection tool comprises an imaging system configured to image a portion of a semiconductor substrate. The inspection tool may further comprise an image analysis system configured to obtain an image of a structure on the semiconductor substrate from the imaging system, encode the image of the structure into a latent space thereby forming a first encoding. the image analysis system may subtract an artifact vector, representative of an artifact in the image, from the encoding thereby forming a second encoding; and decode the second encoding to obtain a decoded image.

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

Abstract: A computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate. Non-correctable error is used to help predict locations where defects are likely to be present, allowing improvements in metrology throughput. In an embodiment, non-correctable error information relates to imaging error due to limitations on, for example, the lens hardware, imaging slit size, and/or other physical characteristics of the lithography system. In an embodiment, non-correctable error information relates to imaging error induced by lens heating effects.

Abstract: A method for determining a component of optical characteristic of a patterning process. The method includes obtaining (i) a plurality of desired features, (ii) a plurality of simulated features based on the plurality of desired features and an optical characteristic of a patterning apparatus, and (iii) a performance metric (e.g., EPE) related to a desired feature of the plurality of desired features and an associated simulated feature of the plurality of simulated features; determining a set of optical sensitivities of the patterning process by computing a change in value of the performance metric based on a change in value of the optical characteristic; and identifying, based on the set of optical sensitivities, a set of components (e.g., principal components) of the optical characteristic that include dominant contributors in changing the value of the performance metric.

Abstract: The invention relates to an electronic system for an accelerometer having a piezoelectric element and a first mechanical resonance frequency, comprising: a) a damping circuit configured to: —receive an acceleration signal from the piezoelectric element; —electronically dampen an amplitude of the first mechanical resonance frequency; and—generate a damped acceleration signal, b) an extender configured to: —receive the damped acceleration signal; —extend the frequency response; and—output an extended damped acceleration signal, wherein the extender is configured to have a first electronic anti-resonance frequency matching the damped first mechanical resonance frequency, and to have a frequency response between the first electronic anti-resonance frequency and a higher second frequency that is substantially opposite to a corresponding frequency response of the combination of the accelerometer and the damping circuit.

Abstract: A broadband radiation source device, including a fiber assembly having a plurality of optical fibers, each optical fiber being filled with a gas medium, wherein the broadband radiation source device is operable such that subsets of the optical fibers are independently selectable for receiving a beam of input radiation so as to generate a broadband output from only a subset of the plurality of optical fibers at any one time.

Abstract: Disclosed among other aspects is a power supply such as may be used in a charged particle inspection system. The power supply includes a direct current source such as a programmable linear current source connected to a controlled voltage source where the control signal for the controlled voltage source is derived from a measured voltage drop across the direct current source.

Abstract: A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modelled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate.

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

Abstract: Disclosed herein is a substrate stack comprising a plurality of substrates, wherein: each substrate in the substrate stack comprises at least one alignment opening set; the at least one alignment opening set in each substrate is aligned for a light beam to pass through corresponding alignment openings in each substrate; and each substrate comprises at least one alignment opening that has a smaller diameter than the corresponding alignment openings in the other substrates.

Abstract: A flood column for charged particle flooding of a sample, the flood column comprising a charged particle source configured to emit a charged particle beam along a beam path; a source lens arranged down-beam of the charged particle source; a condenser lens arranged down-beam of the source lens; and an aperture body arranged down-beam of the condenser lens, wherein the aperture body is for passing a portion of the charged particle beam; and wherein the source lens is controllable so as to variably set the beam angle of the charged particle beam down-beam of the source lens.

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

Abstract: Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system for projecting a plurality of secondary charged-particle beams from a sample onto a charged-particle detector. The electro-optical system may include a first pre-limit aperture plate comprising a first aperture configured to block peripheral charged-particles of the plurality of secondary charged-particle beams, and a beam-limit aperture array comprising a second aperture configured to trim the plurality of secondary charged-particle beams. The charged-particle detector may include a plurality of detection elements, wherein a detection element of the plurality of detection elements is associated with a corresponding trimmed beam of the plurality of secondary charged-particle beams.

Abstract: Apparatuses, systems, and methods for multi-modal operations of a multi-beam inspection system are disclosed. An apparatus for generating multi-modal beamlets may include an aperture array which includes a first group of apertures having a first size and a second group of apertures having a second size different from the first size, the second group of apertures adjoining the first group of apertures, in which the first group of apertures and the second group of apertures are in different pass-or-block statuses. A multi-beam apparatus of multi-modal inspection operations may include the aforementioned apparatus, a source configured to emit charged particles, a condenser system configured to set a projection area of the charged particles, and circuitry for controlling the first and second groups of apertures.

Abstract: A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.

Abstract: Disclosed is an optical component, being configured to function as an optical frequency converter in a broadband radiation source device. The optical component comprises a gas cell, and a hollow-core photonic crystal fiber at least partially enclosed within said gas cell. The local cavity volume of said gas cell, where said hollow-core photonic crystal fiber is enclosed within the gas cell, comprises a maximum value of 36 cm3 per cm of length of said hollow-core photonic crystal fiber.

Abstract: A substrate support for supporting a substrate. The substrate support comprises a main body, a clamping device and a dither device. The main body comprises a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate W is being loaded onto the support surface.

Abstract: A detection system for an alignment sensor, and an alignment sensor and lithographic projection apparatus comprising such a detection system is disclosed. The detection system comprises at least one detection circuit; and a plurality of optical fiber cores for transporting a measurement signal to the at least one detection circuit. At least as subset of the plurality of optical fiber cores are selectively switchable between a detection state and a non-detection state, thereby defining a configurable detection spot.

Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m?1K?1.