Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.

Abstract: A method including: obtaining a device design pattern layout having a plurality of design pattern polygons; automatically identifying, by a computer, a unit cell of polygons in the device design pattern layout; identifying a plurality of occurrences of the unit cell within the device design pattern layout to build a hierarchy; and performing, by the computer, an optical proximity correction on the device design pattern layout by repeatedly applying an optical proximity correction designed for the unit cell to the occurrences of the unit cell in the hierarchy.

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

Abstract: Systems, methods, and computer programs for increasing a depth of focus for a lithography system are disclosed. In one aspect, a method includes providing an optical spectrum, a mask pattern, and a pupil design, that together are configured to provide the lithography system with a depth of focus. The method also includes iteratively varying the optical spectrum and an assist feature in the mask pattern to provide a modified optical spectrum and a modified mask pattern that increases the depth of focus. The method further includes configuring a component of the lithography system based on the modified optical spectrum and the modified mask pattern that increases the depth of focus.

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

Abstract: A process tool for processing production substrates, the process tool including: a movable stage configured to perform long-stroke movements in an X-Y plane; an imaging device mounted to a fixed part of the tool and having an optical axis substantially parallel to the X-Y plane; and a mirror mounted on the movable stage and oriented at a predetermined angle of inclination to the X-Y plane so that by moving the movable stage to a predetermined position a part of a component to be inspected can be imaged by the imaging device.

Abstract: Methods and apparatus are disclosed for determining a characteristic of a structure. In one arrangement, the structure is illuminated with first illumination radiation to generate first scattered radiation. A first interference pattern is formed by interference between a portion of the first scattered radiation reaching a sensor and first reference radiation. The structure is also illuminated with second illumination radiation from a different direction. A second interference pattern is formed using second reference radiation. The first and second interference patterns are used to determine the characteristic of the structure. Azimuthal angles of the first and second reference radiations onto the sensor are different.

Abstract: A radiation filter for reducing transmission of an unwanted wavelength of radiation. The radiation filter includes zirconium and SiN3. The radiation filter may form part of a radiation sensor including a passivation layer arranged to receive radiation transmitted by the radiation filter, a photodiode arranged to receive radiation transmitted by the passivation layer, and circuit elements connected to the photodiode. The radiation sensor may perform optical measurements as part of an extreme ultraviolet lithographic apparatus or a lithographic tool.

Abstract: A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).

Abstract: The invention provides a pneumatic support device for a lithographic apparatus and a lithographic apparatus with such support device. The support device comprises a gas spring. The gas spring comprises a suspending part, a suspended part, and a pressure chamber configured for supporting the suspended part relative to the suspending part. The support device further comprises an actuator configured for positioning the suspended part relative to the suspending part, an acceleration sensor configured for generating a first sensor signal representative for the acceleration of the suspending part, a pressure sensor configured for generating a second sensor signal representative for the pressure in the pressure chamber, and a control unit.

Abstract: A lithographic apparatus includes a number of sensors for measuring positions of features on a substrate prior to applying a pattern. Each sensor includes an imaging optical system. Position measurements are extracted from pixel data supplied by an image detector in each sensor. The imaging optical system includes one or more light field modulating elements and the processor processes the pixel data as a light-field image to extract the position measurements. The data processor may derive from each light-field image a focused image of a feature on the substrate, measuring positions of several features simultaneously, even though the substrate is not at the same level below all the sensors. The processor can also include corrections to reduce depth dependency of an apparent position of the feature include a viewpoint correction. The data processor can also derive measurements of heights of features on the substrate.

Abstract: Systems, methods, and programming are described for inspecting a substrate having a pattern imaged thereon, including obtaining a plurality of selected target locations on the substrate, the selected target locations dependent on characteristics of the pattern, scanning the substrate with a plurality of electron beamlets, wherein the scanning includes individually addressing the beamlets to impinge on the selected target locations independently, detecting a reflected or a transmitted portion of the beamlets, and generating images of the selected target locations.

Abstract: A method comprising the steps of receiving a mask assembly comprising a mask and a removable EUV transparent pellicle held by a pellicle frame, removing the pellicle frame and EUV transparent pellicle from the mask, using an inspection tool to inspect the mask pattern on the mask, and subsequently attaching to the mask an EUV transparent pellicle held by a pellicle frame. The method may also comprise the following steps: after removing the pellicle frame and EUV transparent pellicle from the mask, attaching to the mask an alternative pellicle frame holding an alternative pellicle formed from a material which is substantially transparent to an inspection beam of the inspection tool; and after using an inspection tool to inspect the mask pattern on the mask, removing the alternative pellicle held by the alternative pellicle frame from the mask in order to attach to the mask the EUV transparent pellicle held by the pellicle frame.

Abstract: A combined enrichment and radioisotope production apparatus comprising an electron source arranged to provide an electron beam, the electron source comprising an electron injector and an accelerator, an undulator configured to generate a radiation beam using the electron beam, a molecular stream generator configured to provide a stream of molecules which is intersected by the radiation beam, a receptacle configured to receive molecules or ions selectively received from the stream of molecules, and a target support structure configured to hold a target upon which the electron beam is incident in use.

Abstract: An apparatus (10) for increasing a pulse length of a pulsed radiation beam, the apparatus comprising: a beam splitter (16) configured to split an input radiation beam (18) into a first beam (24) and a second beam (22); an optical arrangement (12,14), wherein the beam splitter and the optical arrangement are configured such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement; and at least one optical element (30) in an optical path of the first beam, the at least one optical element configured such that the phase of different parts of a wavefront of the first beam is varied to reduce coherence between the first beam and the second beam.

Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

Abstract: Disclosed is an optical component, being configured to function as an optical frequency converter in a broadband radiation source device. The optical component comprises a gas cell, and a hollow-core photonic crystal fiber at least partially enclosed within said gas cell. The local cavity volume of said gas cell, where said hollow-core photonic crystal fiber is enclosed within the gas cell, comprises a maximum value of 36 cm3 per cm of length of said hollow-core photonic crystal fiber.

Abstract: Disclosed herein is a method comprising: depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rate of deposition during the first time period and an average rate of deposition during the second time period are different.

Abstract: A system for heating an optical component of a lithographic apparatus, the system comprising a heating radiation source, the heating radiation source being configured to emit heating radiation for heating of the optical component, wherein the system is configured to direct the heating radiation emitted by the heating radiation source onto the optical component, a portion of the heating radiation being absorbed by the optical component and another portion of the heating radiation being reflected by optical component, and wherein the system is configured to vary or change a property of the heating radiation emitted by the heating radiation source such that the other portion of the heating radiation that is reflected by the optical component is constant during operation of the lithographic apparatus.