Patents Assigned to ASML Netherlands
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Patent number: 11099485Abstract: A method of maintaining a set of fingerprints representing variation of one or more process parameters across wafers subjected to a device manufacturing method, the method including: receiving measurement data of one or more parameters measured on wafers; updating the set of fingerprints based on an expected evolution of the one or more process parameters; and evaluation of the updated set of fingerprints based on decomposition of the received measurement data in terms of the updated set of fingerprints. Each fingerprint may have a stored likelihood of occurrence, and the decomposition may involve: estimating, based the received measurement data, likelihoods of occurrence of the set of fingerprints in the received measurement data; and updating the stored likelihoods of occurrence based on the estimated likelihoods.Type: GrantFiled: April 9, 2018Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, Vahid Bastani, Dag Sonntag, Jelle Nije, Hakki Ergün Cekli, Georgios Tsirogiannis, Robert Jan Van Wijk
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Patent number: 11099486Abstract: A technique to generate predicted data for control or monitoring of a production process to improve a parameter of interest. Context data associated with operation of the production process is obtained. Metrology/testing is performed on the product of the production process, thereby obtaining performance data. A context-to-performance model is provided to generate predicted performance data based on labeling of the context data with performance data. This is an instance of semi-supervised learning. The context-to-performance model may include the learner that performs semi-supervised labeling. The context-to-performance model is modified using prediction information related to quality of the context data and/or performance data. Prediction information may include relevance information relating to relevance of the obtained context data and/or obtained performance data to the parameter of interest.Type: GrantFiled: December 13, 2017Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, Dimitra Gkorou, Georgios Tsirogiannis, Thomas Leo Maria Hoogenboom, Richard Johannes Franciscus Van Haren
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Patent number: 11101099Abstract: The invention relates to an exposure apparatus and a method for projecting a charged particle beam onto a target. The exposure apparatus comprises a charged particle optical arrangement comprising a charged particle source for generating a charged particle beam and a charged particle blocking element and/or a current limiting element for blocking at least a part of a charged particle beam from a charged particle source. The charged particle blocking element and the current limiting element comprise a substantially flat substrate provided with an absorbing layer comprising Boron, Carbon or Beryllium. The substrate further preferably comprises one or more apertures for transmitting charged particles. The absorbing layer is arranged spaced apart from the at least one aperture.Type: GrantFiled: June 21, 2018Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Hendrik Vincent Van Veen, Derk Ferdinand Walvoort
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Patent number: 11099487Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: GrantFiled: March 28, 2018Date of Patent: August 24, 2021Assignee: ASML Netherlands BVInventors: Marc Hauptmann, Everhardus Cornelis Mos, Weitian Kou, Alexander Ypma, Michiel Kupers, Hyunwoo Yu, Min-Sub Han
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Patent number: 11099319Abstract: An optical fiber, an apparatus for receiving input radiation and broadening a frequency range, a radiation source, a metrology arrangement and a lithographic apparatus are provided. The optical fiber comprises a hollow core, a cladding portion and a support portion. The cladding portion surrounds the hollow core and comprises a plurality of anti-resonance elements for guiding radiation through the hollow core. The support portion surrounds and supports the cladding portion and comprises an inner support portion, an outer support portion and a deformable connecting portion that connects the inner support portion to the outer support portion.Type: GrantFiled: April 2, 2020Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Patrick Sebastian Uebel, Sebastian Thomas Bauerschmidt, Peter Maximilian Götz
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Patent number: 11099489Abstract: The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.Type: GrantFiled: December 12, 2019Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Hugo Augustinus Joseph Cramer, Hilko Dirk Bos, Erik Johan Koop, Armand Eugene Albert Koolen, Han-Kwang Nienhuys, Alessandro Polo, Jin Lian, Arie Jeffrey Den Boef
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Patent number: 11101185Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.Type: GrantFiled: December 19, 2019Date of Patent: August 24, 2021Assignee: ASML Netherlands B.V.Inventors: Adriaan Johan Van Leest, Anagnostis Tsiatmas, Paul Christiaan Hinnen, Elliott Gerard McNamara, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer
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Publication number: 20210255553Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.Type: ApplicationFiled: May 3, 2021Publication date: August 19, 2021Applicant: ASML Netherlands B.V.Inventors: Zili ZHOU, Nitesh PANDEY, Olger Victor ZWIER, Patrick WARNAAR, Maurits VAN DER SCHAAR, Elliott Gerard MC NAMARA, Arie Jeffrey DEN BOEF, Paul Christiaan HINNEN, Murat BOZKURT, Joost Jeroen OTTENS, Kaustuve BHATTACHARYYA, Michael KUBIS
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Publication number: 20210255548Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.Type: ApplicationFiled: May 6, 2021Publication date: August 19, 2021Applicant: ASML Netherlands B.V.Inventors: Venugopal VELLANKI, Vivek Kumar JAIN, Stefan HUNSCHE
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Publication number: 20210255552Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.Type: ApplicationFiled: April 27, 2021Publication date: August 19, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Joannes Jitse VENSELAAR, Anagnostis TSIATMAS, Samee Ur REHMAN, Paul Christiaan HINNEN, Jean-Pierre Agnes Henricus Marie VAESSEN, Nicolas Mauricio WEISS, Gonzalo Roberto SANGUINETTI, Thomai ZACHAROPOULOU, Martijn Maria ZAAL
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Publication number: 20210255547Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.Type: ApplicationFiled: May 20, 2019Publication date: August 19, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Jeroen Van Dongen, Wim Tjibbo TEL, Sarathi ROY, Yichen ZHANG, Andrea CAVALLI, Bart Laurens SJENITZER, Simon Philip Spencer HASTINGS
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Patent number: 11092902Abstract: Disclosed is a method and associated inspection apparatus for detecting variations on a surface of a substrate. The method comprises providing patterned inspection radiation to a surface of a substrate. The inspection radiation is patterned such that an amplitude of a corresponding enhanced field is modulated in a manner corresponding to the patterned inspection radiation. The scattered radiation resultant from interaction between the enhanced field and the substrate surface is received and variations on the surface of the substrate are detected based on the interaction between the enhanced field and the substrate surface. Also disclosed is a method of detecting any changes to at least one characteristic of received radiation, the said changes being induced by the generation of a surface plasmon at said surface of the optical element.Type: GrantFiled: May 17, 2018Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventors: Johannes Franciscus Martinus D'Achard Van Enschut, Tamara Druzhinina, Nitish Kumar, Sarathi Roy, Yang-Shan Huang, Arie Jeffrey Den Boef, Han-Kwang Nienhuys, Pieter-Jan Van Zwol, Sander Bas Roobol
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Patent number: 11094426Abstract: The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.Type: GrantFiled: February 20, 2020Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Hendrik Vincent Van Veen, Willem Henk Urbanus, Marco Jan-Jaco Wieland
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Patent number: 11092900Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.Type: GrantFiled: November 6, 2019Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventors: Maurits Van Der Schaar, Youping Zhang, Hendrik Jan Hidde Smilde, Anagnostis Tsiatmas, Adriaan Johan Van Leest, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen
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Patent number: 11094502Abstract: An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.Type: GrantFiled: December 9, 2016Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventors: Bernardo Kastrup, Johannes Catharinus Hubertus Mulkens, Marinus Aart Van Den Brink, Jozef Petrus Henricus Benschop, Erwin Paul Smakman, Tamara Druzhinina, Coen Adrianus Verschuren
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Patent number: 11092903Abstract: An exposure apparatus arranged to project a radiation beam onto a target portion of a substrate, the exposure apparatus having: a first substrate holder configured to hold the substrate; a second substrate holder configured to hold the substrate; a sensor holder configured to hold a sensor and/or detector; a first measurement device having a first alignment system having an alignment sensor configured to measure positions of a substrate alignment mark on the substrate; a second measurement device having a second alignment system having a further alignment sensor configured to measure positions of the substrate alignment mark on the substrate; a first scale arranged on a lower surface of the first substrate holder; and a first encoder head arranged to cooperate with the first scale, the first encoder head located beneath the first alignment system and held by a stationary support.Type: GrantFiled: January 30, 2018Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventor: Junichi Kanehara
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Patent number: 11096266Abstract: A method includes providing a target material that comprises a component that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first beam of radiation toward the target material to deliver energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second beam of radiation toward the modified target, the second beam of radiation converting at least part of the modified target to plasma that emits EUV light; measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first beam of radiation; and controlling an amount of radiant exposure delivered to the target material from the first beam of radiation based on the one or more measured characteristics to within a predetermined range of energies.Type: GrantFiled: April 27, 2020Date of Patent: August 17, 2021Assignee: ASML Netherlands B.V.Inventors: Daniel Jason Riggs, Robert Jay Rafac
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Publication number: 20210249224Abstract: An electron beam apparatus including: an electron beam source configured to generate an electron beam; a beam conversion unit including an aperture array configured to generate a plurality of beamlets from the electron beam, and a deflector unit configured to deflect one or more groups of the plurality of beamlets; and a projection system configured to project the plurality of beamlets onto an object, wherein the deflector unit is configured to deflect the one or more groups of the plurality of beamlets to impinge on the object at different angles of incidence, each beamlet in a group having substantially the same angle of incidence on the object.Type: ApplicationFiled: May 24, 2019Publication date: August 12, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Erwin Paul SMAKMAN, Albertus Victor Gerardus MANGNUS, Maikel Robert GOOSEN
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Publication number: 20210247700Abstract: A method for determining a correction for control of at least one manufacturing apparatus used in a manufacturing process for providing structures to a region on a substrate, the region including a plurality of sub-regions. The method includes obtaining measurement data relating to a process parameter of the manufacturing process for the region; and determining a correction for the manufacturing apparatus based on the measurement data. The correction is configured to maintain the process parameter within a specified range across a boundary between two of the sub-regions and/or to better correct the process parameter across the boundary between two of the sub-regions with respect to within the remainder of the region.Type: ApplicationFiled: May 1, 2019Publication date: August 12, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wolter SIEMONS, Daan Maurits SLOTBOOM, Erik Peter DE KORT
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Publication number: 20210247698Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.Type: ApplicationFiled: June 11, 2019Publication date: August 12, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Bart SMEETS, Anita BOUMA, Johannes Jacobus Matheus BASELMANS, Birgitt Noelle Cornelia Liduine HEPP, Paulus Hubertus Petrus KOLLER, Carsten Andreas KÖHLER