Abstract: A vacuum chamber and an arrangement for atomic layer deposition. The vacuum chamber includes a loading wall provided with a loading opening, a back wall opposite the loading wall, and a first direction extending in a direction between the loading wall and the back wall. The vacuum chamber further includes a first vacuum chamber support rail inside the vacuum chamber and extending in the first direction, and a second vacuum chamber support rail inside the vacuum chamber and extending in the first direction and arranged spaced apart from the first vacuum chamber support rail. The first vacuum chamber support rail is arranged independently movable in vertical direction, and the second vacuum chamber support rail is arranged independently movable in vertical direction.

Abstract: A loading device, arrangement, and method for loading a reaction chamber inside a vacuum chamber. The loading device includes a loading platform arranged to support the reaction chamber, the loading platform having a first end, a second end and a first direction, a first loading member provided to the loading platform, and a second loading member provided to the loading platform, the first loading member being arranged independently movable in relation to the loading platform and the second loading member in the first direction, and the second loading member being arranged independently movable in relation to the loading platform and the first loading member in the first direction.

Abstract: An atomic layer deposition reactor and a method for operating a reactor. The reactor includes a vacuum chamber having a loading wall provided with a loading opening, and a reactor door assembly having a reactor door. The reactor door assembly is arranged to move the reactor door between a first door position in which the reactor door is against the loading wall and arranged to close the loading opening, and a second door position in which the reactor door is spaced apart from and opposite the loading wall. The reactor door assembly is further arranged to move the reactor door between the second door position, and a third door position in which the reactor door is aside from the loading opening.

Abstract: A gas feeding cup removably provided in a fixed gas manifold structure of an atomic layer deposition apparatus and including a cup bottom including gas feeding channels extending through the cup bottom from a cup bottom outer surface to a cup bottom inner surface on the other side of the cup bottom; and a cup wall surrounding the cup bottom and extending transverse relative to the cup bottom in a direction away from the cup bottom at the inner surface side of the cup bottom such that a gas feeding space is formed by the cup wall and the cup bottom inner surface.

Abstract: A precursor source arrangement for an atomic layer deposition reactor and to an atomic layer deposition apparatus wherein the precursor source arrangement includes a valve chamber having one or more supply valves, and a precursor source chamber having a precursor container space inside the precursor source chamber. The precursor source chamber includes a precursor source heat transfer element arranged to heat the precursor container inside the precursor container space. The valve chamber includes a valve chamber heat transfer element arranged to heat the one or more valves inside the valve chamber, and the valve chamber heat transfer element is arranged in heat transfer contact with the precursor source heat transfer element.

Abstract: An apparatus and a method for processing one or more substrates in a batch process according to the principles of atomic layer deposition (ALD) includes a reaction chamber, a chamber plate for closing the reaction chamber, a motor arranged to move the chamber plate between an open position, in which the reaction chamber is open, and a closed position, in which the reaction chamber is closed, and an actuator arm mechanism connected to said motor. The actuator arm mechanism having three or more actuator arms having a distal end, which is connected to the chamber plate, the distal ends of the three or more actuator arms define a plane on the chamber plate.

Abstract: An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

Abstract: A display arrangement comprises a thin film display element comprising a first patterned conductor layer, comprising a first display electrode, on a first side of an emissive layer; a second patterned conductor layer, comprising a second display electrode, on a second side of the emissive layer opposite the first side; and a touch-sensing element comprising first and second touch electrodes formed in the first and second patterned conductor layers, respectively. The display arrangement further comprises a control unit configured to measure capacitive coupling for at least one of the touch electrodes, said measuring comprising supplying a measurement volt age signal to the touch-sensing element, and, when supplying the measurement voltage signal to one touch electrode, to supply a shielding voltage signal to the other touch electrode to decrease an effect of a touch from the side of said other touch electrode on the capacitive coupling for said one touch electrode.

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

Abstract: A precursor supply cabinet for accommodating one or more precursor containers having cabinet walls defining an inner cabinet space. The precursor supply cabinet includes a ventilation discharge connection arranged to discharge ventilation gas from the inner cabinet space, one or more ventilation inlet connections, two or more separate gas tight precursor supply chambers for accommodating precursor containers. The gas tight precursor supply chambers are arranged inside the inner cabinet space of the precursor supply cabinet such that the inner cabinet space of the precursor supply cabinet surrounding the separate gas tight precursor supply chambers is ventilated.

Abstract: The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

Abstract: A display arrangement comprises a thin film display element comprising a first patterned conductor layer, comprising a first display electrode, on a first side of an emissive layer; a second patterned conductor layer, comprising a second display electrode, on a second side of the emissive layer opposite the first side; and a touch-sensing element comprising first and second touch electrodes formed in the first and second patterned conductor layers, respectively. The display arrangement further comprises a control unit configured to measure capacitive coupling for at least one of the touch electrodes, said measuring comprising supplying a measurement volt age signal to the touch-sensing element, and, when supplying the measurement voltage signal to one touch electrode, to supply a shielding voltage signal to the other touch electrode to decrease an effect of a touch from the side of said other touch electrode on the capacitive coupling for said one touch electrode.

Abstract: A gas distribution unit in connection with an atomic layer deposition reactor includes an inlet surface, an outlet surface, a process gas channel extending through the gas distribution unit and being open to the inlet surface and to the outlet surface, a barrier gas inlet fitting connected to the process gas channel between the inlet surface and the outlet surface for supplying barrier gas to the process gas channel, and a barrier gas outlet fitting connected to the process gas channel between the inlet surface and the barrier gas inlet fitting for discharging barrier gas from the process gas channel.

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

Abstract: A thin film display element (100) has at least one emissive area (103) in the display region (101) and a layer structure (104) comprising: a first patterned conductor layer (110) comprising a first display electrode (111) in the display region; a second patterned conductor layer (120) comprising a second display electrode (121) in the display region; and an emissive layer (130) between the first and the second conductor layers configured to emit light in the at least one emissive area. The patterned conductor layers further comprise a first touch electrode (141) and a second touch electrode (142) in the display region, the first and the second touch electrodes forming a touch sensor (140) for capacitive touch or proximity sensing.

Abstract: The invention relates to coating precursor nozzle (15) for subjecting a surface of a substrate (5) to a coating precursor. The nozzle (15) having a nozzle output face (10a), first and second nozzle side edges (31, 32), and first and second nozzle end edges (33, 34). The coating precursor nozzle (15) comprising a precursor supply channel (16), a first discharge channel (17a), a first cross purge gas channel (18a), a second cross purge gas channel (18b), a first edge purge gas channel (19a) and at least one first auxiliary purge gas channel (20). The invention further relates to a nozzle head (1).

Abstract: A material comprising a first layer of matrix material doped with a dopant metal is disclosed. The matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium. In the first layer of matrix material doped with the dopant metal, the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +2. Further is disclosed a method for fabricating the material and a device comprising the material.