Patents Assigned to Dialog Semiconductor GmbH
-
Publication number: 20030095369Abstract: A battery protection circuit for use between a battery output and a load is achieved. The circuit comprises, first, a plurality of fused cells coupled in parallel between the battery output and the load. Each fused cell comprises, first, a fuse having first and second terminals where the first terminal is coupled to a battery output. Second, a means having zener effect has a p terminal and an n terminal. The p terminal is coupled to the second terminal of the fuse. Finally, a cell switch having first and second terminals completes each fused cell. The cell switch first terminal is coupled to the second terminal of the fuse, and the cell switch second terminal is coupled to the n terminal of the diode to form a cell output. Finally, the battery protection circuit comprises a shorting switch, that may comprise a MOS transistor that exhibits punch through, that is coupled between the load and each fused cell output. The current source second terminal is coupled to ground.Type: ApplicationFiled: November 28, 2001Publication date: May 22, 2003Applicant: Dialog Semiconductor GmbHInventor: Horst Knoedgen
-
Publication number: 20030094932Abstract: A regulated voltage supply circuit having improved power supply rejection ratio is achieved. The circuit comprises, first, a voltage follower having an input, an output, and a power supply voltage. The input is coupled to a reference voltage. The output comprises the regulated voltage supply. Second, a means of compensating noise on the power supply voltage comprises phase shifting the power supply voltage 180 degrees and feeding back the phase shifted power supply voltage to the voltage follower input to thereby improve power supply rejection ratio. The means of compensating noise may comprise an adjustable gain. This adjustable gain may further comprise an adjustable value resistance. The adjustable gain is used in a to optimize the PSRR by testing comprising modulating noise on the power supply voltage, measuring the noise on the regulated voltage supply, and adjusting the gain.Type: ApplicationFiled: November 28, 2001Publication date: May 22, 2003Applicant: Dialog Semiconductor GmbHInventor: Horst Knoedgen
-
Publication number: 20030090314Abstract: A new current reference circuit is achieved. This current reference circuit is based on MOS transistors but does not depend upon the threshold voltage. The circuit comprises, first, a first MOS transistor having gate, drain, and source. A gate voltage value is coupled from the gate to the source. A second MOS transistor has gate, drain, and source. The second MOS transistor is of the same size and type as the first MOS transistor. The source is coupled to said first MOS transistor source. The gate voltage value plus a delta voltage value is coupled from the gate to the source. A means is provided for forcing a drain voltage value from the drain to the source of the first MOS transistor and from the drain to the source of the second MOS transistor. The first MOS transistor and the second MOS transistor conduct drain currents in the linear mode.Type: ApplicationFiled: November 30, 2001Publication date: May 15, 2003Applicant: Dialog Semiconductor GmbHInventors: Frank Kronmueller, Horst Knoedgen
-
Publication number: 20030080416Abstract: A method to form a very low resistivity interconnection in the manufacture of an integrated circuit device is achieved. A bottom conductive layer is formed overlying a substrate. The bottom conductive layer creates a first electrical coupling of a first location and a second location of the integrated circuit device. A dielectric layer is formed overlying the bottom conductive layer. A top conductive layer is formed overlying the dielectric layer. The top conductive layer is coupled to the bottom conductive layer through openings in the dielectric layer to form a second electrical coupling of the first location and the second location. A metal wire is bonded to the top conductive layer to form a third electrical coupling of the first location and the second location to complete the very low resistivity interconnection in the manufacture of the integrated circuit device.Type: ApplicationFiled: December 3, 2001Publication date: May 1, 2003Applicant: Dialog Semiconductor GmbHInventors: Wolfgang Jorger, Achim Stellberger, Michael Keller
-
Publication number: 20030080747Abstract: A method for measuring and filtering analog signals in a battery protection algorithm is achieved. A clock signal having a fixed period is generated. Analog signals are sampled to create sampled digital signals. The sampling is synchronized with the clock signal. The analog signals are sampled such that no two analog signals are sampled during a single fixed period. The sampled digital signals are filtered such that stored versions of the sampled digital signals are updated whenever the sampled digital signals transition to new states and remain in these new states for a defined number of the samplings. A circuit for measuring and filtering analog signals is in a battery protection circuit is also achieved. Sampling circuits are placed into standby mode when not sampling.Type: ApplicationFiled: December 3, 2001Publication date: May 1, 2003Applicant: Dialog Semiconductor GmbHInventor: Rolf Huelss
-
Publication number: 20030081455Abstract: A new floating gate programmable device cell is achieved. The device comprises, first, a negative injection transistor having drain, source, bulk, and gate. The source and bulk are coupled to ground. The drain forms an output of the cell. A positive injection transistor has drain, source, bulk, and gate. The drain, source, and bulk are coupled to a programming voltage. The gate is coupled to the negative injection transistor gate to form a floating gate node. Finally, a capacitor has a first terminal coupled to the floating gate node and a second terminal coupled to a control voltage. The states of the programming voltage and the control voltage determine negative charge injection onto the floating gate node and positive charge injection onto the floating gate node. A voltage on the floating gate node comprises a nonvolatile memory state that is detectable by the impedance of the output.Type: ApplicationFiled: December 5, 2001Publication date: May 1, 2003Applicant: Dialog Semiconductor GmbHInventor: Dirk Killat
-
Patent number: 6552579Abstract: A new current sense circuit is achieved. The circuit comprises, first, an output transistor having gate, source, and drain. The drain is coupled to a load, the source is coupled to a power rail, the gate is coupled to a control voltage such that the output transistor conducts an output current. Second, a sense transistor has gate, source, and drain. The source is coupled to the power rail and the gate is coupled to the control voltage. A sensing factor comprises the output transistor size divided by the sense transistor size. Third, a means of equalizing the sense transistor drain-to-source voltage and the output transistor drain-to-source voltage is used such that the sense transistor drain current comprises the output current divided by the sensing factor. Finally, a current controlled oscillator is included. The current controlled oscillator has input and output. The input comprises the sense transistor drain current.Type: GrantFiled: April 19, 2002Date of Patent: April 22, 2003Assignee: Dialog Semiconductor GmbHInventor: Horst Knoedgen
-
Patent number: 6535275Abstract: A three-dimensional imaging range finder is disclosed using a transmitted pulse reflected from a target. The range finder includes a pixel sensor for receiving light from the target and the reflected pulse. A global counter is provided for determining a time-of-flight value of the transmitted pulse by providing accurate count data to pixel memories. A processing circuit, which is coupled to the pixel sensor and the global counter, extracts the reflected pulse received by the pixel sensor, and stores the time-of-flight value upon extracting the reflected pulse. The pixel sensor provides a luminance signal and the processing circuit includes a high pass filter to extract the reflected pulse from the luminance signal.Type: GrantFiled: January 30, 2001Date of Patent: March 18, 2003Assignee: Dialog Semiconductor GmbHInventors: Nathaniel Joseph McCaffrey, Robert James Andreas, Peter Alan Levine, Ramon Ubaldo Martinelli
-
Publication number: 20030025480Abstract: The invention refers to a charge/discharge protection circuit for a rechargeable battery, where the protection circuit is integrated on a single chip, including the fusible link, the load current switch and the short-circuit switch. This is achieved by dividing the functions of the fusible link, the load current switch, and the short-circuit switch into in parallel arranged T-sections, each of which is designed for only a fraction of the nominal load so that each of the easily integrated fuse segments carry only the respective fraction of the nominal current. It is important that the entire protection circuit or its control logic will not be destroyed before through an unduly high over-voltage, in which case the sequential melting of the fuse segments would no longer be guaranteed. This is handled by a semiconductor switch which short-circuits the over-voltage immediately.Type: ApplicationFiled: August 2, 2002Publication date: February 6, 2003Applicant: Dialog Semiconductor GmbH.Inventor: Axel Pannwitz
-
Patent number: 6448745Abstract: An apparatus and a method for controlling a converter of electronic power supply energy embodied for example as a boost converter or as a boost converter with a power factor correction (PFC) or being used as a DC to DC converter that is running in a discontinuous mode and which is using an equation to calculate the point of time of the zero current state of the storage inductor based on the ON time of the shunt switch and the voltages at the source and the load side. This method achieves a maximum power transfer by recharging of the storage inductor right after the zero current state is reached. The accuracy of the voltage measurement is increased by calibration of the source and load voltage dividers. Minimizing distortion and harmonics is achieved by a fine adjustment of the energy transfer through fine-tuning of the pulse width of the switch overcoming the limitations of discrete time steps in clocked digital systems by toggling between neighboring ON time values of the switch.Type: GrantFiled: January 8, 2002Date of Patent: September 10, 2002Assignee: Dialog Semiconductor GmbHInventor: Dirk Killat
-
Publication number: 20020097543Abstract: The invention refers to a charge/discharge protection circuit for a rechargeable battery which is protected by a fusible link, where the rechargeable battery comprises a control logic which opens or closes a load switch depending on the magnitude of the battery voltage, the voltage on the charge/discharge terminals of the protection circuit and the charge/discharge current. The protection circuit is designed so that the electric strength needs to match only the actual maximum battery voltage, thus requiring little real estate on an IC chip and also allowing most components to be integrated.Type: ApplicationFiled: January 24, 2002Publication date: July 25, 2002Applicant: Dialog Semiconductor GmbHInventors: Axel Pannwitz, Hans Martin Von Staudt, Achim Stellberger
-
Patent number: 6414552Abstract: A non-linear current mirror is achieved. The non-linear current mirror is particularly useful in the output stage of an operational transconductance amplifier for improving slew rate and stability while maintaining low bias current. The non-linear current mirror circuit comprises, first, a first MOS transistor has gate and drain are coupled together and further coupled to a first current input. A second MOS transistor has gate coupled to the first MOS transistor gate, and the drain is coupled to a second current input. A third MOS transistor has drain is coupled to the second MOS transistor source, and the gate is coupled to the second MOS transistor drain. A fourth MOS transistor has gate coupled to the third MOS transistor gate. The source is coupled to the first MOS transistor source and the third MOS transistor source. Finally, the drain forms a current output.Type: GrantFiled: November 16, 2001Date of Patent: July 2, 2002Assignee: Dialog Semiconductor GmbHInventors: Frank Kronmueller, Paul Zehnich
-
Patent number: 6114883Abstract: A circuit includes a first control unit which controls a first semiconductor switch connecting an output of the circuit to a first supply voltage terminal and a second control unit which controls a second semiconductor switch connecting the output of the circuit to a second supply voltage terminal. A single operating voltage source supplies a voltage to the first control unit, whereas a rechargeable energy storage device supplies a voltage to the second control unit. One terminal of the operating voltage source is connected to the first supply voltage terminal and one terminal of the energy storage device is connected to the output of the circuit.Type: GrantFiled: July 14, 1998Date of Patent: September 5, 2000Assignee: Dialog Semiconductor GmbHInventor: Horst Knodgen