Abstract: Introduce a pulse length control mechanism to generate virtual multi-level output pulses for a Class-D Amplifier, which has only 2 physical output levels. Typically a Sigma-Delta-Modulator converts the input signal into high frequency low bit rate. The disclosed invention adds functions to transform the SDM signal into pulses with equivalent multi-level time-voltage areas and adds a pulse-length-control mechanism to produce various output pulse patterns, where the summations of the positive and negative pulses, within one sampling period, result in time-voltage area values, corresponding to 3 or more digital levels. Thus the invention produces higher signal quality at lower sampling rates.

Abstract: A method for tracking the MOS oxide thickness by the native threshold voltage of a “native” MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. Said threshold voltage can therefore be used to build a reference voltage Vx+Vth which accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.

Abstract: A method for tracking the MOS oxide thickness by the native threshold voltage of a “native” MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. Said threshold voltage can therefore be used to build a reference voltage Vx+Vth which accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method. Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.

Abstract: A method for tracking the MOS oxide thickness by the native threshold voltage of a “native” MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. Said threshold voltage can therefore be used to build a reference voltage Vx+Vth which accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.

Abstract: A new method and device to generate two field of view images from a sensor pixel array is achieved. The method comprises providing an array of sensing pixels. An array digital data stream is generated by sequentially generating a plurality of digital data streams each corresponding to blocks of the sensing pixels in the array. All the sensing pixels in any block are sampled simultaneously. First and second digital video streams are generated from the array digital data stream. The first and second digital video streams comprise first and second fields of view of the array, respectively. Each pixel of the first digital video stream corresponds to a filtered and sub-sampled combination of more than one of the sensing pixel samples.

Abstract: A new method to detect and to correct a weakly programmed cell in a nonvolatile memory device is achieved. The method comprises providing a plurality of nonvolatile memory cells. A means to read a selected cell compares the performance of the selected cell with the performance of a reference cell. A read state of the selected cell is high if the selected cell exceeds the reference cell. The read state of the selected cell is low if the selected cell exceeds the reference cell. A first read state is obtained by reading the selected cell with the reference cell biased to a first value. A second read state is obtained by reading the selected cell with the reference cell biased to a second value that is greater than the first value. The selected cell is flagged as weakly programmed, high if the first and second read states do not match. A third read state is obtained by reading the selected cell with the reference cell biased to a third value that is less than the first value.

Abstract: A method and circuits of a high isolation and high-speed buffer amplifier capable to handle frequencies in the GHz range have been achieved. The output to input isolation is primary dependent on the gate-source capacitance of the active buffer transistor. Having two or more in series and by reducing the impedance between them a high isolation can be achieved. The input signals are split in several signal paths and are amplified in the push-pull mode using source follower amplifiers. Then the amplified signals are being combined again. The amplified output current is mirrored applying a multiplication factor. Said method and technology can be used for buffer amplifiers having differential input and differential output or having single input and single output or having differential input and single output. A high reversed biased (output to input) isolation and a reduced quiescent current have been achieved.

Abstract: A new method to detect and to correct a weakly programmed cell in a nonvolatile memory device is achieved. The method comprises providing a plurality of nonvolatile memory cells. A means to read a selected cell compares the performance of the selected cell with the performance of a reference cell. A read state of the selected cell is high if the selected cell exceeds the reference cell. The read state of the selected cell is low if the selected cell exceeds the reference cell. A first read state is obtained by reading the selected cell with the reference cell biased to a first value. A second read state is obtained by reading the selected cell with the reference cell biased to a second value that is greater than the first value. The selected cell is flagged as weakly programmed, high if the first and second read states do not match. A third read state is obtained by reading the selected cell with the reference cell biased to a third value that is less than the first value.

Abstract: A motor bridge driver interface, implemented in an ASIC using cost-efficient CMOS technology, is designed to control four external MOS power transistors in a H-bridge configuration for DC-motor driving to achieve accurate and fast switching. Said driver interface is comprising a charge pump for generating the control voltage for the high-side N-channel MOS transistors, high-side (HSD) circuits, low-side (LSD) circuits and a complex digital interface for supplying the control signals in a programmable timing scheme. A “strong” charge pump is used to realize a simple CMOS switch to steer the output to the high-side transistors of said H-bridge. The motor bridge is connected to the battery supply by an additional N-channel MOS transistor to implement a reverse supply protection.

Abstract: Introduce a pulse length control mechanism to generate virtual multi-level output pulses for a Class-D Amplifier, which has only 2 physical output levels. Typically a Sigma-Delta-Modulator converts the input signal into high frequency low bit rate. The disclosed invention adds functions to transform the SDM signal into pulses with equivalent multi-level time-voltage areas and adds a pulse-length-control mechanism to produce various output pulse patterns, where the summations of the positive and negative pulses, within one sampling period, result in time-voltage area values, corresponding to 3 or more digital levels. Thus the invention produces higher signal quality at lower sampling rates.

Abstract: A system and methods for an interface for magnetic sensors to determine a rotational angle has been achieved. Said interface can be used for any kind of magnetic sensors providing analog signals of the sine and cosine values of the angle to be determined. Said analog signals are being processed in two measurement paths for the sine and cosine signal each until the desired angle is computed by a CORDIC processor. The first stage of said measurement path is the conversion of the sine and cosine signals from analog to digital by 2nd order delta-sigma modulators with an over-sampling ratio. A low-pass decimation filter with sinc3 characteristic performs the digital value computation. The next stage normalizes the digitized sine and cosine values to correct offset and scaling deviations.

Abstract: A pixel for detecting red and greed light is a single pixel is described. The pixel comprises a deep N well formed in a P type epitaxial substrate. The pixel comprises a deep N well formed in a P type epitaxial substrate. A number of P wells, which are used as the sensor nodes, are formed in the deep N well. The use of these P wells as the sensor nodes improves the modulation transfer function. The depth of the deep N well is about equal to the depth of hole electron pairs generated by red light in silicon. The depth of the P wells is about equal to the depth of hole electron pairs generated by green light in silicon. A red/green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells and the deep N well isolated.

Abstract: This invention provides a circuit and a method for interfacing a subscriber information module, SIM to a base band controller for a mobile phone. It provides voltage level shifting to allow a low voltage base band controller chip to interface to a higher voltage SIM card. The higher voltage bus goes to the SIM card of a mobile phone. The subscriber information module typically contains personal information such as telephone number, identification codes and pin numbers. The circuit of this invention uses active transistor pull-down and pull-up mechanisms. The active pull-up is active for less than one bit time so that the SIM card sees only a 20 kilo ohm resistor allowing performances equal to or better than ISO7816 specifications.

Abstract: The invention refers to a charge/discharge protection circuit for a rechargeable battery being able to differentiate between a temporary overvoltage on the charge/discharge terminals and a permanent overvoltage and in the last case for security reasons to permanently disconnect the battery from the charge/discharge terminals. Hereby said protection circuit comprises a number of partial switches (15[1:]), being either parallel to a load switch (LS) or parallel to the charge terminals, and an overvoltage detector (10) which closes in case of an overvoltage all partial switches via a control logic (11, 12, 13, 17, 18) and which afterwards opens one partial switch after the other. A voltage detector (16), monitoring the remaining voltage over the partial switches, inhibits, however, the opening of at that time next partial switch if the remaining voltage over the still closed partial switches is higher than a predefined limit of said remaining voltage.

Abstract: A circuit and method are given, to realize a loudness control for mobile phone earpieces and speakers with the help of a proximity sensor, which is realized as an infrared photo-electric guard circuit, where only very few external parts are needed. As a novelty here, the necessary photo sensors are integrated onto a single chip. To form the photodiodes within a single IC together with the other circuit elements are much less expensive. Using the advantages of that solution the circuit of the invention is manufactured with standard CMOS technology and only very few discrete external components. This solution reduces also power consumption and manufacturing cost.

Abstract: A multiple level logic memory device is achieved. The device comprises, first, a plurality of memory cells capable of storing an analog voltage. Second, there is included a means of converting an external data word value comprising one value of a set of at least three possible values into a writing analog voltage corresponding to the external data word value. Third, a means of decoding an external address value in response to a write command such that the writing analog voltage is electrically coupled to the memory cell is included. Fourth, there is included a means of converting the memory cell analog voltage into an external data word value comprising one value of the set of at least three possible values corresponding to the memory cell analog voltage. Finally, a means of encoding the external address value in response to a read command such that the memory cell analog voltage is electrically coupled to the means of converting the memory cell analog voltage is used.

Abstract: A new multiple imager array device is achieved. The device comprises, first, a bi-directional bus. An array of imagers is arranged in n rows and m columns. The n and m are positive integers. Each imager is connected to the bi-directional bus. A line of bits of any imager is accessible by a line address. Each imager has a Vmode input and an output enable input. The Vmode input and the output enable input must be enabled to allow accessing. A first multiplexer has an input and a plurality of outputs. The input is connected to a column counter. Each output is connected to the output enable input of one of the imagers. A second-multiplexer has an input and a plurality of outputs. The input is connected to a row counter. Each output is connected to the Vmode input of each imager in one of the rows.

Abstract: Digital miniature cameras and methods to manufacture thereof have been achieved. Said miniature cameras having an adjustable focusing device are intended to be used as a built-in modules in hand-held consumer electronic devices, such as e.g. mobile phones and PDAs. The cameras invented have a very small size and produce high-quality pictures. Glue is used to hold different parts together and to seal the joints. The lens is glued in the final stage of the manufacturing line, thus providing the focus setting and the sealing of the cavity that covers the image sensor. A glob top is used to cover and seal the image processor. Said glob top serves two different purposes, first, to distribute the heat away from the sensor and, second, to lock the frame, together with the lens house, into a printed circuit board. In one embodiment a cavity PCB is used to “bury” the sensor of the camera, thus reducing the overall height required.

Abstract: A test system and a related method to perform optical and electrical tests, to adjust the focus and to seal the lens of digital fixed-focus cameras have been achieved. Said test system is especially suited for miniature camera module to be built into consumer electronic devices as mobile phones, PDAs, etc. Said test system comprises three parts, a control system, an auto-focus head, and a XYZ robot. Said auto-focus head executes the adjustment of the focus, identifies hot pixels and black level, tests the saturation level, identifies cold pixels, tests dust particles and white, blue, red, and infrared color levels. As last step the auto-focus applies glue to fix the focused lens of the camera module. Said XYZ robot performs is moving the camera modules to be tested in XY direction and is approaching the lens system of the auto-focus head in Z direction. Said control system has interfaces to both, XYZ robot and auto-focus hand and is comprising interfaces and a frame grabber.

Abstract: A new method of reading an imager is achieved. The method comprises providing an imager array comprising n rows and m columns where a pair of rows can be read during a single row access time. A first image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows of the imager array. The reading begins at a first row, and the reading stops when less than three rows are unread. Thereafter pixel values of the next row are read and not stored. Thereafter pixel values of the first row of the imager array are read and not stored. A second image field is completed by sequentially reading and storing pixel values of pairs of adjacent rows. The reading begins at the second row, the reading stops when less than two rows are unread.