Abstract: Methods and apparatus for separating substrates are disclosed, as are articles formed from the separated substrates. A method of separating a substrate having first and second surfaces includes directing a beam of laser light to pass through the first surface and, thereafter, to pass through the second surface. The beam of laser light has a beam waist located at a surface of the substrate or outside the substrate. Relative motion between the beam of laser light and the substrate is caused to scan a spot on a surface of the substrate to be scanned along a guide path. Portions of the substrate illuminated within the spot absorb light within the beam of laser light so that the substrate can be separated along the guide path.

Abstract: A method and system for adaptively controlling a laser-based material processing process are provided. The system includes sensing equipment to measure a process variable or condition of at least one of a laser-based material processing system and a workpiece processed by the material processing system and to provide a corresponding measurement signal. The control system also includes a signal processor for processing the measurement signal to obtain a processed signal which initiates, at least semi-automatically, an action associated with at least one of the material processing system and the workpiece. A method and system for at least semi-automatically qualifying a laser-based material processing system which delivers laser energy to locations on or adjacent a plurality of microstructures formed on a workpiece to at least partially process the microstructures are also provided.

Abstract: Embodiments of an apparatus for measuring the leakage current of capacitive components is taught. One embodiment includes a first stage amplifier configured to receive an input from a serially-connected capacitive component at an inverting input and a feedback resistor in a feedback path of the first stage amplifier. A resistance value of the feedback resistor is programmable based on an expected value of the leakage current and a corresponding voltage output.

Abstract: The present invention is a method for separating a workpiece from a common substrate. It includes the steps of providing the workpiece, generating, within a beam source, a beam of laser pulses configured to modify a portion of the workpiece, determining a depth for creating a modified region based upon a characteristic of the workpiece and modifying a plurality of regions within the workpiece to form a plurality of modified regions. Modifying the plurality of regions includes directing the beam of laser pulses from an output of the beam source onto the workpiece, causing relative motion between the workpiece and the output of the beam source while directing the beam of laser pulses onto workpiece, and modifying a characteristic of the pulses of the beam upon generating a number of pulses which generally correspond to creating the modified regions to the determined depth.

Abstract: The invention is method and an apparatus for performing the method having the steps of providing a workpiece, cleaving the workpiece to form a first unit piece and a second unit piece having a spatial relationship with the first unit piece in which the second unit piece abuts the first unit piece. Without substantially altering the spatial relationship after cleaving the workpiece, forming a first crack within the first unit piece and propagating the first crack from the first unit piece into the second unit piece.

Abstract: The invention is an apparatus, for performing the method, and the method including the steps of providing a workpiece, contacting a portion of an exterior surface of the workpiece to an acoustic couplant such that an interface between the acoustic couplant and the portion of the exterior surface is at least substantially continuous across the portion of the exterior surface, and propagating a crack through the workpiece. A portion of the acoustic couplant at the interface has acoustic impedance relative to the acoustic energy that is greater than 400 kg·m?2·s?1.

Abstract: The invention is method, and an apparatus for performing the method having the steps of providing a workpiece, generating a plurality of free electrons at a region of the exterior surface, and machining a portion of the workpiece adjoining the first region by directing laser energy onto the workpiece.

Abstract: A method of accomplishing high-throughput laser processing of workpiece features arranged in a densely spaced pattern minimizes workpiece feature processing inaccuracy and quality degradation that result from dynamic and thermal loads on laser beam positioning and optical components directing the laser beam during workpiece feature processing. A preferred embodiment is implemented with a laser beam positioning system composed of a zero-inertia optical deflector of an acousto-optic beam deflector (AOD) or an electro-optical deflector (EOD) type, a galvanometer head, and a linear stage cooperating to position the laser beam among the workpiece features.

Abstract: An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.

Abstract: Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.

Abstract: An etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. An estimated etch time duration is determined for removing the amount of the material upon exposing the silicon workpiece to the spontaneous etchant for the estimated etch time duration. In some embodiments, the system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.

Abstract: Spectroscopy data are correlated to physical locations on a sample. A laser beam is scanned along a beam trajectory relative to the sample located in a sample chamber. The laser beam disassociates material from the sample along the beam trajectory to produce an aerosol of the disassociated material within the sample chamber. A fluid is passed through the sample chamber to transport the disassociated material to a spectrometer for determining spectroscopy data values of a selected element along the beam trajectory. The spectroscopy data values are correlated with respective locations of the sample along the beam trajectory, and an image is displayed of at least a portion of the sample including the respective locations along the beam trajectory where the material was disassociated by the laser beam. The image includes indicia of the spectroscopy data values at their correlated locations.

Abstract: Laser direct ablation (LDA) produces patterns cut into a dielectric layer for the formation of electrically conductive traces with controlled signal propagation characteristics. LDA processing includes selecting a dose fluence for removing a desired depth of material along a scribe line on a surface of a workpiece, selecting a temporal pulsewidth for each laser pulse in a series of laser pulses, and selecting a pulse repetition frequency for the series of laser pulse. The pulse repetition frequency is based at least in part on the selected temporal pulsewidth to maintain the selected dose fluence along the scribe line. The selected pulse repetition frequency provides a predetermined minimum overlap of laser spots along the scribe line. The LDA process further includes generating a laser beam including the series of laser pulses according to the selected dose fluence, temporal pulsewidth, and pulse repetition frequency.

Abstract: A laser processing system quickly and flexibly modifies a processing beam to determine and implement an improved or optimum beam profile for a particular application (or a subset of the application). The system reduces the sensitivity of beam shaping subsystems to variations in the laser processing system, including those due to manufacturing tolerances, thermal drift, variations in component performance, and other sources of system variation. Certain embodiments also manipulate lower quality laser beams (higher M2 values) to provide acceptable shaped beam profiles.

Abstract: An apparatus for collecting material from a workpiece from a machined workpiece includes a fluid nozzle for inducing a flow of a fluid and a collection nozzle. The collection nozzle includes a motive nozzle for accelerating a first portion of the fluid flow; and an induced-suction nozzle for receiving a second portion of the fluid flow. A suction force can be generated within a vicinity of the induced-suction nozzle based on the accelerated first portion of the fluid flow. The suction force can be sufficient to carry at least a portion of the material away from the workpiece. Related methods of collecting material from a workpiece are also disclosed, as are systems capable of incorporating the material apparatus collecting apparatus.

Abstract: A miniature component carrier includes a thin, resilient mask through which are formed multiple spaced-apart apertures each of which is sized and shaped to compliantly receive and hold a miniature component in a controlled orientation during termination processing such that the side margins of the aperture primarily contact and grip the corner regions of the miniature component. At least some of the apertures have side margins that form rhomboidal or elliptical apertures. The shape and size of the multiple spaced-apart apertures confine within an operational tolerance contact between the side margins of the aperture and the side or end wall surfaces of the electronic component. This reduces mechanical damage to the side and end wall surfaces that results from their contact with the side margins during receipt and gripping of the miniature component in the aperture.

Abstract: Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.

Abstract: A panel includes a plurality of microholes arranged in a pattern and filled with light transmissive polymeric material. The light transmissive polymeric material occludes the microholes and is set, or cured, by exposure to an energy source using at least two discrete exposure periods separated by an idle or rest period. The uniformity of the microholes is thereby improved.

Abstract: An improved method for singulation of compound electronic devices is presented. Compound electronic devices are manufactured by combining two or more substrates into an assembly containing multiple devices. Presented are methods for singulation of compound electronic devices using laser processing. The methods presented provide fewer defects such as cracking or chipping of the substrates while minimizing the width of the kerf and maintaining system throughput.

Abstract: The invention is a method and apparatus for laser marking a stainless steel specimen with commercially desirable marks. The method includes providing a laser processing system having a laser, laser optics and a controller with pre-determined laser pulse parameters, selecting the pre-determined laser pulse parameters associated with the desired mark, and directing the laser marking system to produce laser pulses having laser pulse parameters associated with the desired marks including temporal pulse widths greater than about 1 and less than about 1000 picoseconds.