Abstract: A laser machining system (20) employs a fast positioner (68), such as a pair of galvanometer mirrors (70), that directs a beam axis (24) at a specified velocity to a start position of a cutting path (92) in coincidence with one of multiple laser pulses emitted from a laser (28) a constant laser pulse repetition rate, which runs independently of the relative position of the beam axis (24) with respect to the workpiece (26).

Abstract: An improved method and apparatus for drilling tapered holes in workpieces with laser pulses is presented which uses defocused laser pulses to machine the holes with specified taper and surface finish while maintaining specified exit diameters and improved system throughput. A system is described which can also drill holes with the desired taper and surface finish without requiring defocused laser pulses.

Abstract: A laser system for processing conductive link structures includes a seed laser generating a seed laser beam. The seed laser is sliced by a modulator into a user configurable series of pulses and the pulses are optically amplified and applied to a conductive link structure. Preferably, the bandwidth of the seed laser is less than 1 nm with an IR center frequency, and the frequency of the laser light of the pulses is doubled or quadrupled prior to application to the conductive structure. Preferably, the pulses are about 1-18 nanosecond pulsewidth and are separated by 100-400 nanoseconds.

Abstract: A laser processing system includes a first positioning system for imparting first relative movement of a beam path along a beam trajectory with respect to a workpiece, a processor for determining a second relative movement of the beam path along a plurality of dither rows, a second positioning system for imparting the second relative movement, and a laser source for emitting laser beam pulses. The system may compensate for changes in processing velocity to maintain dither rows at a predetermined angle. For example, the dither rows may remain perpendicular to the beam trajectory regardless of processing velocity. The processing velocity may be adjusted to process for an integral number of dither rows to complete a trench. A number of dither points in each row may be selected based on a width of the trench. Fluence may be normalized by adjusting for changes to processing velocity and trench width.

Abstract: Embodiments of the present invention exemplarily described herein relate generally to saving XYZ stage coordinates for intended laser locations as well as a kernel image of an ablation pattern placed during a scan placement process, and comparing the kernel image to a current image of the current field of view of a camera/microscope that includes the location a laser would be fired at. This comparision is used during an experiemental run to correct for any built up error. More particularly, embodiments of the present invention relate to apparatuses and methods for software based image recognition to correct errors in open looped systems for positioning a sample relative to a laser in analysis systems for zircon crystal grain dating.

Abstract: Laser systems and methods insert a settling time before and after each tooling action. A peak AOD excursion generally occurs at the transition in velocity between inter-feature moves and tooling moves. This transition occurs both before tooling (on the approach to the tooling location) and after tooling (on the departure from the completed tooling location to the next location). By adding a settling delay on each end of the tooling period, the AOD excursion is allowed to settle to a lower value. This then allows higher inter-tooling velocities (for high throughput) while keeping the AOD travel excursion within the bounds of the system's AOD configuration.

Abstract: The angle of incidence (?) and azimuth (?) of a beam axis (32) can be moved relative to a workpiece (22) to provide desirable taper characteristics to a side wall (124) of a resulting kerf (120) produced by a focused laser beam (30) propagated along the beam axis (32).

Abstract: A method for reducing thermal effects in laser ablation optical emission spectrometry includes creating discrete ablation spots along an analysis line on a target surface. At least one of the following is also carried out. First, the ablation spots are positioned so that a pair of successive ablation spots are spaced apart from one another along the analysis line and are separated from one another by another ablation spot. Second, when the analysis line comprises generally parallel, adjacent analysis line segments, the ablation spots are positioned so that (A) a pair of successive ablation spots are on different analysis line segments, and (B) the successive ablation spots are positioned to be at different longitudinal positions along the analysis line segments when the different analysis line segments are adjacent to one another. As a result, a linear scan of isolated ablation spots can be generated.

Abstract: Laser systems and methods improve the processing velocity of the routs or other features to avoid exceeding the laser system's dynamic limits. A laser processing system divides laser processing commands corresponding to a plurality of features to be processed on or in the workpiece into process segments. Laser processing parameters and beam trajectories are simulated to determine a maximum processing velocity for each of the process segments. The laser processing system selects one or more of the maximum processing velocities for processing the plurality of features on or within the workpiece. A slowest processing velocity of the maximum processing velocities may be used to process each of the plurality of features. Alternatively, each continuous rout sequence may be processed using a different processing velocity. In other embodiments, each process segment is processed using its corresponding maximum processing velocity.

Abstract: A laser beam positioning system of a laser-based specimen processing system produces at beam positioner stage, from a fully fiber-coupled optics phased array laser beam steering system, a steered laser input beam. System directs beam through one or more other beam positioner stages to form a processing laser beam that processes target features of a workpiece mounted on a support.

Abstract: A system is disclosed for repairing liquid crystal display panels that include a polarizing film. The system includes a laser repair optical system, a measurement optical system, and a processor. The laser repair optical system includes a polarization unit for modifying a polarization of a laser repair beam along a laser output path that is directed toward a workpiece. The measurement optical system includes an illumination source for providing measurement illumination along a measurement illumination path, and a detector for detecting reflected measurement illumination. The processor adjusts the polarization unit responsive to the reflected measurement illumination.

Abstract: A substrate is diced using a program-controlled pulsed laser beam apparatus having an associated memory for storing a laser cutting strategy file. The file contains selected combinations of pulse rate ?t, pulse energy density E and pulse spatial overlap to machine a single layer or different types of material in different layers of the substrate while restricting damage to the layers and maximising machining rate to produce die having predetermined die strength and yield. The file also contains data relating to the number of scans necessary using a selected combination to cut through a corresponding layer. The substrate is diced using the selected combinations. Gas handling equipment for inert or active gas may be provided for preventing or inducing chemical reactions at the substrate prior to, during or after dicing.

Abstract: A laser ablation system includes a sample chamber 102 configured to accommodate a target 104 within an interior 106 thereof, a sample generator 108 configured to remove a portion of the target 104 (which may be subsequently captured as a sample) and an analysis system 110 configured to analyze a composition of the sample. A sample capture cell in the chamber proximate to the target has a capture cavity configured to receive target material, a first inlet configured to transmit a flow of a carrier gas from a first location adjacent to an exterior of the capture cell into a region of the capture cavity; and an outlet configured to receive carrier gas from another region of the capture cavity. The sample chamber 102 includes an injection nozzle 120 configured to introduce, into the interior 106, a fluid such as a carrier gas.

Abstract: A sample chamber is configured to accommodate a target such that a portion of the target is removable as a sample. A carrier gas injection system is configured to introduce a carrier gas into the sample region from a first position and a second position within the sample chamber such that at least a portion of the sample is entrainable by the carrier gas within the sample region. A portion of the sample region is located between the first position and the second position. A sample transport conduit is configured to transport at least a portion of the sample entrained by the carrier gas to a location outside the sample chamber.

Abstract: A laser ablation system includes a sample chamber 102 configured to accommodate a target 104 within an interior 106 thereof, a sample generator 108 configured to remove a portion of the target 104 (which may be subsequently captured as a sample) and an analysis system 110 configured to analyze a composition of the sample. A sample capture cell in the chamber proximate to the target has a capture cavity configured to receive target material, a first inlet configured to transmit a flow of a carrier gas from a first location adjacent to an exterior of the capture cell into a region of the capture cavity; and an outlet configured to receive carrier gas from another region of the capture cavity. The sample chamber 102 includes an injection nozzle 120 configured to introduce, into the interior 106, a fluid such as a carrier gas.

Abstract: Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.

Abstract: Systems and methods provide laser pulse energy control and/or monitoring. An example laser processing apparatus includes a laser system to generate a beam of laser pulses and a pulse energy control system to adjust the pulse energy of each laser pulse in the beam on a pulse-by-pulse basis. The pulse energy control system includes an open loop feedforward control path that selects a pulse energy transmission value for each laser pulse based on a calibrated transmission curve that maps laser pulse energy as a function of pulse repetition frequency. A laser energy monitor measures the laser pulse energy of each laser pulse in the beam of laser pulses. A power control loop may further adjust the pulse energy of one or more laser pulses in the beam of laser pulses based on feedback from the laser energy monitor.

Abstract: A component handler (100) may include: a test plate (102) including multiple circular component-seating tracks (104) each including multiple component-seating sites (500) configured to retain an electrical component (510) such that its face (522) faces away from the test plate (102); a component receiving system (114, 106, 300, 302, 306, 308, 310, 400, 402, 502, and/or 508) positioned along a rotation path of the seating tracks (104); a component test module assembly (1502) for electrically contacting each electrical component (510) seated in a component-seating site (500); one or more collection bins (124); and a collection assembly (120) for collecting some of the electrical components (510) from component-seating sites (500) and directing the electrical components (510) into the bins (124) based on one or more tests conducted at the component test module assembly (1502).

Abstract: Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.

Abstract: A method and laser processing system (2) addresses a substrate (102) with three different sets of laser processing parameters to achieve different surface effects in the substrate (102). A first set of laser parameters is employed to form a recess (106) in the substrate. A second set of laser parameters is employed to polish a surface (108) of the recess (106). A third set of laser parameters is employed to modify a polished surface (108) of the recess (106) to have optical characteristics that satisfy conditions for a desirable visual appearance.