Abstract: The disclosure relates to a method of aligning a charged particle beam apparatus, comprising the steps of providing a charged particle beam apparatus in a first alignment state; using an alignment algorithm, by a processing unit, for effecting an alignment transition from said first alignment state towards a second alignment state of said charged particle beam apparatus; and providing data related to said alignment transition to a modification algorithm for modifying said alignment algorithm in order to effect a modified alignment transition.

Abstract: Compact correctors for correcting spherical aberrations of a particle-optical lens in a charged particle microscope system, according to the present disclosure a strong hexapole configured to generate a strong hexapole field when a voltage is applied to it, and a weak hexapole positioned between the strong hexapole and a sample. The strong hexapole is positioned such that the crossover of a charged particle beam of the charged particle system does not pass through the center of the strong hexapole, such that the strong hexapole field applies at least an A2 aberration and a D4 aberration to the charged particle beam. The weak hexapole is further positioned or otherwise configured such that, when a voltage is applied to the weak hexapole it generates a weak hexapole field that applies at least a combination A2 aberration and a combination D4 aberration to the charged particle beam of the charged particle microscopy system.

Abstract: Optical corrector modules for charged particle columns which comprise split multipoles, according to the present invention include at least one split multipole composed of two multipoles separated by a distance less than 10 mm, 1 m, 100 ?m, and/or 10 ?m. Each of the individual multipoles may comprise at least two electrodes positioned to partially define a beam path through the multipole. According to the present invention, each of the electrodes comprises: a first surface that faces upstream of a charged particle beam when used in the charged particle column; and a second surface that faces downstream of the charged particle beam when used in the charged particle column, wherein the thickness between the first surface and the second surface for each of the electrodes is less than 10 mm, 5 mm, and/or 3 mm. Within the scope of the disclosure, the split multipoles may be electrostatic and may correspond to hexapoles.

Abstract: Electrostatic discharge (ESD) test systems include a FET-based pulse generator using pairs of back-to-back FETs coupled to produce an ESD pulse based on discharging a capacitor that is coupled in series with a device under test (DUT). A number of FETs can be selected based on an intended ESD test voltage magnitude.

Abstract: The present invention is directed to an electrode component with at least two electrodes or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and/or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and/or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam.

Abstract: Computer-implemented methods for controlling a charged particle microscopy system include estimating a drift of a stage of the charged particle microscopy system based on an image sequence, and automatically adjusting a stage settling wait duration based on the drift estimate. Charged particle microscopy systems include an imaging system, a movement stage, and a processor and memory configured with computer-executable instructions that, when executed, cause the processor to estimate a stage settling duration of the movement stage based on an image sequence obtained with the imaging system, and automatically adjust a stage settling wait duration for the movement stage based on the stage settling duration.

Abstract: Electron sources can include an electron source crystal coupled in series between opposing electrically conductive supports to form an electrically conductive path, wherein the electrical resistance of each of the electrically conductive supports is lower than the electrical resistance of the electron source crystal. Electron source crystals can include an emitting end and opposing shank end, wherein the shank end includes opposing leg portions. Electrically conductive supports can include foil supports spaced apart across a gap, wherein each of the opposing leg portions is attached to a respective foil support such that the foil supports are electrically connected to form the electrically conductive path. Particle focusing system are also disclosed. Electron sources can include an electron source crystal having an emitting end and opposing shank end, wherein the shank end is formed of a pair of opposing leg portions. Methods of manufacturing and operating electron sources are also disclosed.

Abstract: A method for reducing throughput time in a sample image acquisition session in transmission electron microscopy comprises: providing an electron microscope comprising a sample component, a beam generator, an adjusting component, and a filtering component; securing a sample by using the sample component; generating an electron beam by using the beam generator; generating an image beam by directing the beam to the sample component; adjusting at least one of the beam and the image beam by using the adjusting component to obtain at least one modified image beam, wherein the adjusting is performed in such a way, that off-axial aberration of the modified image beam is minimized; and filtering the modified image beam via the filtering component to reduce resolution-deteriorating effect of chromatic aberration on the modified image beam resulting from the adjusting of the at least one of the beam and the image beam.

Abstract: The invention relates to a charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets. The charged particle beam device comprises a specimen holder for holding a specimen; a source for producing a beam of charged particles; and an illuminator for converting said beam of charged particles into a plurality of charged particle beamlets and directing said plurality of charged particle beamlets onto said specimen. According to the disclosure, the illuminator comprises a multi-aperture lens plate having a plurality of apertures for defining the corresponding plurality of charged particle beamlets; as well as at least a first electrode for generating an electrical field at a surface of the multi-aperture lens plate. The apertures in said multi-aperture lens plate have a noncircular cross-sectional shape to correct for neighbouring aperture induced aberrations. This allows for decreased spot size, and with this imaging resolution of the device is increased.

Abstract: The invention relates to a method implemented by a data processing apparatus, comprising the steps of receiving an image; providing a set-point for a desired image quality parameter of said image; and processing said image using an image analysis technique for determining a current image quality parameter of said image. In the method, the current image quality parameter is compared with said desired set-point. Based on said comparison, a modified image is generated by using an image modification technique. The generating comprises the steps of improving said image in terms of said image quality parameter in case said current image quality parameter is lower than said set-point; and deteriorating said image in terms of said image quality parameter in case said current image quality parameter exceeds said set-point. The modified image is then output.

Abstract: An ion beam system for modifying a sample or workpiece surface, comprises: an ion source for generating ions; an ion beam focusing column configured to direct ions from the ion source to form an ion beam and focus the ion beam towards a target area; and a sample stage for receiving and positioning the sample or workpiece at the target area, wherein the ion beam focusing column comprises: an aperture plate having a non-circular beam limiting aperture configured to limit the extent of a transmitted ion beam; and a multipole aberration compensator configured to apply a four-fold astigmatism to the ion beam to compensate spherical aberration produced by one or more lenses in the ion beam focusing column. The multipole aberration compensator may be a multipole element that generates an octupole field. A corresponding method is provided.

Abstract: Systems and methods for operating a combined laser and broad ion beam (BIB) polisher in a sample preparation workflow, are disclosed. An example method for operating a combined laser and broad ion beam (BIB) polisher according to the present invention comprises positioning a sample within the interior volume of the combined BIB and laser sample preparation system, causing a laser source component of the combined BIB and laser sample preparation system to emit an optical beam towards the sample, and causing a BIB source component of the combined BIB and laser sample preparation system to emit a broad ion beam towards the sample. The optical beam and the broad ion beam are each configured to cause a first portion and a second portion of the sample upon which it is incident to be removed, respectively.

Abstract: Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.

Abstract: Electrostatic discharge (ESD) test systems include a FET-based pulse generator using pairs of back-to-back FETs coupled to produce an ESD pulse based on discharging a capacitor that is coupled in series with a device under test (DUT). A number of FETs can be selected based on an intended ESD test voltage magnitude.

Abstract: Methods and systems for implementing artificial intelligence enabled preparation end-pointing are disclosed. An example method at least includes obtaining an image of a surface of a sample, the sample including a plurality of features, analyzing the image to determine whether an end point has been reached, the end point based on a feature of interest out of the plurality of features observable in the image, and based on the end point not being reached, removing a layer of material from the surface of the sample.

Abstract: Methods and apparatus are disclosed for concurrent cleaning and cleanliness monitoring of a sample such as a substrate for electron point projection microscopy. A graphene sample is illuminated by a laser. Raman scattering from contaminants generates secondary light which is analyzed by spectrometer. Based on Raman scattering analysis, sample cleanliness is determined. Cleaning can be dynamically terminated based on achieving a target cleanliness level or based on prediction thereof. Variations and additional applications are disclosed.

Abstract: A method of imaging a sample includes acquiring one or more first images of a region of the sample at a first imaging condition with a charged particle microscope system. The one or more first images are applied to an input of a trained machine learning model to obtain a predicted image indicating atom structure probability in the region of the sample. An enhanced image indicating atom locations in the region of the sample based on the atom structure probability in the predicted image is caused to be displayed in response to obtaining the predicted image.

Abstract: A sample holder retains a sample and can continuously rotate the sample in a single direction while the sample is exposed to a charged particle beam (CPB) or other radiation source. Typically, the CPB is strobed to produce a series of CPB images at random or arbitrary angles of rotation. The sample holder can rotate more than one complete revolution of the sample. The CPB images are used in tomographic reconstruction, and in some cases, relative rotation angles are used in the reconstruction, without input of an absolute rotation angle.

Abstract: Systems and methods for operating a broad ion beam (BIB) polisher in a sample preparation workflow having improved uptime, are disclosed. An example method for operating a broad ion beam (BIB) polisher having improved uptime according to the present invention comprises causing a first BIB source to emit a first broad ion beam towards a sample positioned within an interior volume of the BIB polisher while the first BIB source is in emitting the first broad ion beam towards the sample, removing a second BIB source from the BIB polisher that is configured to emit a second broad ion beam towards the sample when in use.

Abstract: Systems and methods for pre-aligning samples for more efficient processing of multiple samples with a BIB system according to the present invention comprises affixing a sample to an adjustable portion of a sample holder, nesting the sample holder with a first mask having a first mask edge, wherein the first mask is positioned outside of a BIB system, and aligning the sample such that it has a desired geometric relationship to the first mask edge. The first mask may be geometrically similar with a second mask within the BIB system that has a second mask edge such that the geometric relationship between the first mask edge and the sample when the sample holder is nested with the first mask is the same as the geometric relationship between the second mask edge and the sample when the sample holder is nested with the second mask.