Abstract: Electrostatic mirror chromatic aberration (Cc) correctors, according to the present disclosure, comprise an electrostatic electron mirror that itself comprises a multipole. The electrostatic electron mirror is positioned within the corrector such that, when the corrector is in use, an electron beam passing through the corrector is not incident on the electrostatic electron mirror along the optical axis of the mirror. The mirror object distance of the electrostatic mirror is equal to the mirror image distance of the electrostatic mirror, and the electrostatic mirror is configured such that the electrostatic mirror applies no dispersion or coma aberration to the electron beam. The multipole is positioned in the mirror plane of the electrostatic electron mirror, and in some embodiments the multipole is a quadrupole.

Abstract: The present invention relates to a method for acquiring tomographic images of a sample in a microscopy system, wherein the sample comprises a defined region, and wherein the method comprises determining a location in three-dimensional space of the defined region, wherein the method further comprises capturing an image of at least a part of the sample, and wherein the determination of the location in three-dimensional space of the defined region is based, at least in part, on the image of the part of the sample. The present invention also relates to a corresponding microscopy system and a computer program product to perform the method according to the present invention.

Abstract: Methods and systems for performing sample lift-out and protective cap placement for highly reactive materials within charged particle microscopy systems are disclosed herein. Methods include preparing a nesting void in a support structure, translating at least a portion of a sample into the nesting void, and milling material from a region of the support structure that defines the nesting void. The material from the region of the support structure is milled such that at least some of the removed material redeposits to form an attachment bond between the sample and a remaining portion of the support structure. In various embodiments, the sample can then be investigated using one or more of serial sectioning tomography on the sample, enhanced insertable backscatter detector (CBS) analysis on the sample, and electron backscatter diffraction (EBSD) analysis on the sample.

Abstract: Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Abstract: Methods and systems for milling and imaging a sample based on multiple fiducials at different sample depths include forming a first fiducial on a first sample surface at a first sample depth; milling at least a portion of the sample surface to expose a second sample surface at a second sample depth; forming a second fiducial on the second sample surface; and milling at least a portion of the second sample surface to expose a third sample surface including a region of interest (ROI) at a third sample depth. The location of the ROI at the third sample depth relative to the first fiducial may be calculated based on an image of the ROI and the second fiducial as well as relative position between the first fiducial and the second fiducial.

Abstract: Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising intermixed electrically insulating material and electrically conductive material, wherein the elongate beam conduit has an electrical conductivity ? and a thickness t, with ?t<0.1 ??1.

Abstract: A system for positioning a sample in a charged particle apparatus (CPA) or an X-ray photoelectron spectroscopy (XPS) system includes a sample carrier coupled to a stage inside the vacuum chamber of the CPA or XPS system. The system allows transferring of the sample carrier among multiple CPAs, XPS systems and glove boxes in inert gas or in vacuum. The sample carrier is releasably coupled with the stage in the vacuum chamber of the CPA or the XPS. Multiple electrodes in a sample area of the sample carrier are electrically connectable with the stage by multiple spring contacts between the sample carrier and the stage.

Abstract: Methods and systems to determine positions of multiple beamlets includes performing a first scan by scanning the beamlets over a first sample region and acquiring multiple cell images; and performing a second scan by scanning the beamlets over a second sample region and acquiring multiple cell images. Each cell image corresponds to a beamlet, and at least a part of an overlapped region between the first sample region and the second sample region is scanned by multiple beamlets during both the first scan and the second scan. Position of each beamlet may then be determined based on the corresponding cell images acquired during the first scan and the second scan.

Abstract: Methods and apparatus are disclosed for integration of image-based metrology into a milling workflow. A first ion beam milling operation is performed to an edge at a distance from a final target position on a sample. An SEM image of the sample is used to determine a distance between the milled edge and a reference structure on the sample. Based on the determined distance, the ion beam is adjusted to perform a second milling operation to shift the milled edge to the final target position. Extensions to iterative procedures are disclosed. Various geometric configurations and corrections are disclosed. Manufacturing and analytic applications are disclosed in a variety of fields, including read-write head manufacture and TEM sample preparation. Other combinations of imaging and milling tools can be used.

Abstract: The present invention relates to a method to reduce drift of a sample and/or its image in a microscopy system, wherein the method comprises determining an expected thermal drift of the sample, and compensating for the drift of the sample and/or its image based upon the expected thermal drift. The present invention also relates to a corresponding microscopy system and a computer program product to perform the method according to the present invention.

Abstract: The invention relates to system and method of inspecting a specimen with a plurality of charged particle beamlets. The method comprises the steps of providing a specimen, providing a plurality of charged particle beamlets and focusing said plurality of charged particle beamlets onto said specimen, and detecting a flux of radiation emanating from the specimen in response to said irradiation by said plurality of charged particle beamlets.

Abstract: Techniques for acquiring an electron energy loss spectrum in two dimensions are disclosed herein. The technique at least includes exposing an electron sensor to an electron spectrum projected in two dimensions, wherein one of the two dimensions corresponds to a dispersive axis, and the other of the two dimensions corresponds to a non-dispersive axis, receiving an electron sensor readout frame from the electron sensor, where the electron sensor readout frame comprises a plurality of values representative of the electron spectrum in each of the two dimensions, and reducing a resolution of the electron sensor readout frame in at least one of the two dimensions, where reducing the resolution includes reducing the number of values in the at least one of the two dimensions, where the electron sensor readout frame comprises a plurality of values in each of the two dimensions after the reduction in resolution.

Abstract: Fiducial coordinates are obtained by aligning template with region of interest extracted from a workpiece image. Image values in the region of interest are projected along a template axis and the project values evaluated to establish a fiducial location which can be used as a reference location for locating workpiece areas for ion beam milling or other processing.

Abstract: The invention relates to a method of preparing a biological sample for study in an analysis device, said method comprising the steps of: providing a biological material to be studied; providing a sample holder that is configured to be placed in said analysis device; and transferring said biological material onto said sample holder for preparing said biological sample. According to the invention, the method comprises the steps of: acquiring a specimen of said biological material provided on said sample holder; transferring said specimen to a screening device for screening said specimen; and evaluating said biological sample based on results obtained by said screening device. With the method, time and resources may be more effectively used in studying biological samples, for example using charged particle microscopy in the form of cryo-EM.

Abstract: Methods and systems for quantum computing based sample analysis include computing cross-correlations of two images using a quantum processing system, and computing less noisy image based of two or more images using a quantum processing system. Specifically, the disclosure includes methods and systems for utilizing a quantum computing system to compute and store cross correlation values for two sets of data, which was previously believed to be physically impossible. Additionally, the disclosure also includes methods and systems for utilizing a quantum computing system to generate less noisy data sets using a quantum expectation maximization maximum likelihood (EMML). Specifically, the disclosed systems and methods allow for the generation of less noisy data sets by utilizing the special traits of quantum computers, the systems and methods disclosed herein represent a drastic improvement in efficiency over current systems and methods that rely on traditional computing systems.

Abstract: Methods of producing microrods for electron emitters and associated microrods and electron emitters. In one example, a method of producing a microrod for an electron emitter comprises providing a bulk crystal ingot, removing a first plate from the bulk crystal ingot, reducing a thickness of the first plate to produce a second plate, and milling the second plate to produce one or more microrods. In another example, a microrod for an electron emitter comprises a microrod tip region that comprises a nanoneedle that in turn comprises a nanorod and a nanoprotrusion tip. The microrod and the nanoneedle are integrally formed from a bulk crystal ingot by sequentially: (i) removing the microrod from the bulk crystal ingot; (ii) coarse processing the microrod tip region to produce the nanorod; and (iii) fine processing the nanorod to produce the nanoprotrusion tip.

Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

Abstract: Air sensitive sample may be transferred between charged particle instruments or between charged particle instrument and a glove box using a sample transfer system. The sample transfer system includes a transfer shuttle for receiving a sample carrier and a transfer rod detachable coupled to the transfer shuttle. The transfer rod moves the sample carrier into or out of the transfer shuttle.

Abstract: A method of producing a compensation signal to compensate for misalignment of a drive unit clamp element can include applying a clamp element drive signal to a drive unit clamp element to engage a mover element, determining a first displacement of the mover element, and determining a first compensation signal based at least in part on the first displacement. The method can further comprise applying the first compensation signal to the drive unit shear elements and the clamp element drive signal to the drive unit clamp element and determining a second displacement of the mover element. If the second displacement is less than a preselected threshold, the first compensation signal can be combined with an initial shear element drive signal to produce a modified shear element drive signal. If the second displacement is greater than the preselected threshold, a second compensation signal can be determined.

Abstract: An electron optical module for providing an off-axial electron beam with a tunable coma, according to the present disclosure includes a structure positioned downstream of an electron source and an electron lens assembly positioned between the structure and the electron source. The structure generates a decelerating electric field, and is positioned to prevent the passage of electrons along the optical axis of the electron lens assembly. The electron optical module further includes a micro-lens that is not positioned on the optical axis of the electron lens assembly and is configured to apply a lensing effect to an off-axial election beam. Aberrations applied to the off-axial electron beam by the micro-lens and the electron lens assembly combine so that a coma of the off-axial beam has a desired value in a downstream plane.