Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

Abstract: The invention relates to a thin film solar module comprising a monolithic solar cell array, including a plurality of solar cells with a layer structure, comprising a rear contact layer, a front contact layer and an absorber layer between the rear contact layer and the front contact layer, and an electrical connection structure for electrically serially connecting neighboring solar cells. The invention also relates to an associated production method.

Abstract: Photovoltaic devices having transparent contact layers are described herein.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: Provided are photovoltaic devices with polycrystalline type II-VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.

Abstract: Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.

Abstract: In accordance with one or more embodiments herein, a method of manufacturing a photovoltaic (PV) top module, to be used together with a PV bottom module, e.g. an SI-based PV bottom module, is provided. The method may include monolithically interconnecting a plurality of thin film based PV sub-cells, manufactured using a perovskite material and/or a CIGS material as solar absorbing material, in series on a substrate in order to create a PV top module including at least one first PV top sub-module, and arranging metal grid lines on top and bottom contact layers of the PV top module. The metal grid lines may be arranged either above or below the top and bottom contact layers of the PV top module.

Abstract: Photovoltaic devices, and layer structures for photovoltaic devices, are described.

Abstract: Structures and methods for making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interlayer disposed between the first submodule and the second submodule. The interlayer permits a portion of light to pass therethrough and includes first and second conformal layers along with a core layer. The first conformal layer directly contacts and conforms to a surface of the first submodule, the second conformal layer directly contacts and conforms to a surface of the second submodule, and the core layer is disposed between the first conformal layer and the second conformal layer.

Abstract: Photovoltaic devices having bifacial enhancement are described herein.

Abstract: The invention relates to a thin film solar module comprising a monolithic solar cell array (1), including a plurality of solar cells (2) with a layer structure, comprising a rear contact layer (3), a front contact layer (4) and an absorber layer between the rear contact layer and the front contact layer, and an electrical connection structure (6) for electrically serially connecting neighbouring solar cells. The invention also relates to an associated production method. In the thin film solar module according to the invention, the electrical connection structure includes contact strips (7) for electrically serially connecting neighbouring solar cells, wherein the electrical connection structure electrically serially connects two respective solar cells (2m, 2m+1) that are adjacent to one another in a series connection direction (RS) via one or more contact strips (7).

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.