Abstract: A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include materials and methods for forming back contacts.

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Abstract: Photovoltaic devices, and methods of making the same, are described. A photovoltaic device comprises a plurality of electrically connected photovoltaic cells, wherein the photovoltaic cells comprise a conducting layer having a first surface and a second surface, the first surface facing an absorber layer; an insulating material disposed on the second surface over at least one of the photovoltaic cells; a conductive member on the insulating material, wherein the insulating material is configured to electrically insulate the conductive member from the second surface; a bus member electrically coupled to the one of the plurality of photovoltaic cells and to the conductive member; and an edge seal comprising a sealant material extending over at least a portion of the one of the plurality of photovoltaic cells; wherein the bus member is disposed between the edge seal and the plurality of photovoltaic cells.

Abstract: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Abstract: In accordance with one or more embodiments herein, a method of manufacturing a photovoltaic (PV) top module, to be used together with a PV bottom module, e.g an SI-based PV bottom module, is provided. The method may include monolithically interconnecting a plurality of thin film based PV sub-cells, manufactured using a perovskite material and/or a CIGS material as solar absorbing material, in series on a substrate in order to create a PV top module including at least one first PV top sub-module, and arranging metal grid lines on top and bottom contact layers of the PV top module. The metal grid lines may be arranged either above or below the top and bottom contact layers of the PV top module.

Abstract: Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

Abstract: According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.

Abstract: Photovoltaic devices having transparent contact layers are described herein.

Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

Abstract: According to the embodiments provided herein, an island in a regular, closed shape is ablated in a first conductive layer. An interconnect is formed through the island, using the island as an alignment fiducial. The island and the interconnect are isolated from the remainder of the first conductive layer.

Abstract: According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.