Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
Type:
Application
Filed:
February 27, 2018
Publication date:
January 30, 2020
Applicant:
First Solar, Inc.
Inventors:
Sachit Grover, Chungho Lee, Xiaoping Li, Dingyuan Lu, Roger Malik, Gang Xiong
Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
Type:
Grant
Filed:
November 3, 2014
Date of Patent:
January 7, 2020
Assignee:
First Solar, Inc.
Inventors:
Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.
Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr (=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.
Type:
Application
Filed:
May 31, 2017
Publication date:
November 28, 2019
Applicant:
First Solar, Inc.
Inventors:
Kenneth Ring, William H. Huber, Hongying Peng, Markus Gloeckler, Gopal Mor, Feng Liao, Zhibo Zhao, Andrei Los
Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).
Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
Type:
Grant
Filed:
January 22, 2015
Date of Patent:
October 29, 2019
Assignee:
First Solar, Inc.
Inventors:
Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.
Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).
Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.
Type:
Application
Filed:
March 25, 2019
Publication date:
July 18, 2019
Applicant:
First Solar, Inc.
Inventors:
Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
Abstract: A process for preparing alloy products is described using a self-sustaining or self-propagating SHS-type combustion process with point-source ignition, preferably a laser, in a pressurized vessel. Binary, ternary and quaternary alloys can be formed with control over polycrystalline structure and bandgap. Methods to tune the bandgap and the alloys formed are described. The alloy products may be doped. Preferably sulfides, tellurides or selenides are formed. Cooling during reaction takes place.
Type:
Application
Filed:
March 23, 2017
Publication date:
May 23, 2019
Applicant:
First Solar, Inc.
Inventors:
Shrinivas GOVINDARAJAN, Michael LATUSEK, Christopher WAGNER, Feng YAN
Abstract: A photovoltaic device can include a module and a rail. The module can have an edge formed around a perimeter of the module. The rail can include a coupling surface at a top side of the rail, and a recessed surface offset from the coupling surface and towards a bottom side of the rail.
Type:
Application
Filed:
November 16, 2018
Publication date:
May 23, 2019
Applicant:
First Solar, Inc.
Inventors:
Joshua Conley, Benjamin DeFresart, Peter Hruby, Matthew Kuzila, Daniel Smith, Thomas Truman
Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
Type:
Application
Filed:
November 26, 2018
Publication date:
March 28, 2019
Applicant:
First Solar Inc.
Inventors:
Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.
Type:
Grant
Filed:
June 2, 2017
Date of Patent:
March 26, 2019
Assignee:
First Solar, Inc.
Inventors:
Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
Abstract: An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers couple to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizer provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.
Abstract: A photovoltaic DC power distribution system provides a DC-DC converter having an output serially connected between a photovoltaic module array and a power converter, such as an inverter, in which the input voltage to the power converter is the sum of the voltage from the array and a voltage output of the DC-DC converter. The DC-DC converter only handles a portion of the power transferred from the array to the power converter.
Inventors:
Joshua Conley, Benjamin De Fresart, Peter Hruby, Matthew Kuzila, Weixin Li, Joseph Lindgren, Daniel Smith, Thomas Truman, Charles Wickersham