Abstract: The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Abstract: The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Abstract: The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Abstract: Strategies for tool designs and their uses wherein the tools can operate in either closed or open modes of operation. The tools easily transition between open and closed modes on demand. According to one general strategy, environmentally controlled pathway(s) couple the ambient to one or more process chambers. Air amplification capabilities upstream from the process chamber(s) allow substantial flows of air to be introduced into the process chamber(s) on demand. Alternatively, the fluid pathways are easily closed, such as by simple valve actuation, to block egress to the ambient through these pathways. Alternative flows of nonambient fluids can then be introduced into the process chamber(s) via pathways that are at least partially in common with the pathways used for ambient air introduction. In other strategies, gap(s) between moveable components are sealed at least with flowing gas curtains rather than by relying only upon direct physical contact for sealing.

Abstract: A system for processing one or more substrates according to the present invention includes a diversion valve that can deliver two or more process fluids to a dispensing device through a common line/pipe. The present invention also includes related methods.

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: A method for electroless plating of a substrate is provided that comprises exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent prior to application of the electroless plating reagent to the substrate. The activated electroless plating reagent is applied to a substrate in the process chamber under conditions to cause the metal of the electroless plating reagent to deposit on the substrate. Systems and modules are also described.

Abstract: Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device by a dispensing device while one or more such microelectronic devices are supported on a turntable in a generally horizontal fashion. Drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying. Particle counts and evaporation thicknesses are reduced by delivering a tensioactive compound like IPA, during at least portions of the rinsing and drying steps while a microelectronic device is controllably rotated.

Abstract: Tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like. The invention provides an approach for rapid, efficient rinsing of wetted surface(s), and is particularly advantageous when used to rinse the lower surface of moveable barrier structures such as a barrier plate that overlies a workpiece being treated in such a manner to define a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, the liquid is flowingly dispensed, preferably under laminar flow conditions, onto a surface that is in fluid communication with the surface to be rinsed. A smooth, uniform wetting and sheeting action results to accomplish rinsing with a significantly reduced risk of generating particle contamination.

Abstract: A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors.

Abstract: A system for supplying water vapor in a process for treatment of a semiconductor wafer, comprising a treatment chamber having an interior for receiving at least one semiconductor wafer and a water vapor dispenser. The water vapor dispenser comprises i) a hot water source, ii) a water vapor separator, iii) a first conduit fluidly connecting the hot water source to the water vapor separator, iii) a fluid control valve in the first conduit controlling the flow of fluid between the hot water source and the water vapor separator, and iv) a second conduit fluidly connecting the water vapor separator to the treatment chamber for delivery of water vapor to the interior of the treatment chamber.

Abstract: Apparatuses, and related methods, for processing a workpiece that include particular baffle members or duct structures having an inlet proximal to an outer periphery of a workpiece and/or workpiece support.

Abstract: An initially hydrophobic surface comprising fluoropolymer is treated to provide the surface with hydrophilic properties. A hydrophobic surface comprising fluoropolymer is physically treated to impart a rough texture thereto, thereby providing the surface with hydrophilic properties. In an alternative method, a roughened surface is treated with a sulfur-based acid, thereby providing the surface with hydrophilic properties In yet another method, a non-roughened surface fluoropolymer surface is treated with a sulfur-based acid for a time sufficient for the surface to exhibit hydrophilic properties. Products made by these processes are also described.

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.

Abstract: Systems for processing microelectronic substrates in a process chamber that incorporate improved technology for transitioning from a wet process to a dry process (especially transitioning from rinsing to drying). At least a portion of residual liquid remaining in fluid supply lines after a wet treatment is removed via a pathway that avoids purging directly onto the substrates. Related methods are also included in the present invention.

Abstract: A method for electroless plating of a substrate is provided that comprises exposing an electroless plating reagent comprising a metal to be plated and at least one reducing agent to a solid phase Activation Material to form an activated electroless plating reagent prior to application of the electroless plating reagent to the substrate. The activated electroless plating reagent is applied to a substrate in the process chamber under conditions to cause the metal of the electroless plating reagent to deposit on the substrate. Systems and modules are also described.

Abstract: The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

Abstract: A rotary union having a housing, a rotor, and a post such that a fluid can be conveyed through the rotary union. The rotor is rotatably coupled to the housing, preferably by at least one bearing interposed between a portion of the rotor exterior and a portion of the housing interior. The post is positioned in the rotary union in a manner effective to help fluidly couple the rotor to the housing and such that an annular gap surrounds at least a portion of the post such that the annular gap constitutes at least a portion of a drain fluid pathway. The present invention also includes fluid delivery systems including such rotary unions and methods of making and/or using such rotary unions.

Abstract: Described are process control methods for spin-coating, and apparatuses and devices incorporating the same, wherein the method is useful for application of developer solution to a substrate, and wherein the process control method includes one or more features of: interrupted serial process control using an interrupt signal from a hardware or a software component, an interrupt service routine, and a multiple process commands initiated at durations measured in parallel from an earlier process event.