Abstract: A process for removing a plurality of layers of different materials from a substrate having a silicon material base, at least one of said layers being a silicon oxide material and at least one other of said layers comprising a metal and the metal layer being located above the silicon oxide layer. The process includes the steps of treating the substrate with a series of chemical formulations adapted to successively remove the materials of the plurality of layers until the silicon material base is exposed, the silicon oxide layer being removed by treatment with HF, wherein the HF treatment to remove said silicon oxide layer comprises exposing the substrate to:initially, a dilute HF solution of no more than 1.0% concentration;subsequently, a concentrated HF solution of from about 2.5% to about 10% concentration; andfinally, a dilute HF solution of no more than 1.0% concentration.

Abstract: Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes a reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime.

Abstract: A system for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, is provided. Generally, the system provided by the present invention includes a pressurized vessel and an outlet coupled to the pressurized vessel adapted to dispense a stream of the admixture including the liquid and the dissolved gas under sufficiently gentle conditions such that the dispensed admixture comprises an increased quantity of dissolved gas relative to admixture produced and dispensed by conventional methods. Thus, the system of the present invention is able to provide, e.g., ozonated water, continuously, efficiently and without cooling, and thus provides a simple, cost efficient system capable of producing high concentration ozonated water.

Abstract: Exhaust components of a coating apparatus can be cleaned to remove coating material therein and/or can be periodically treated so as to prevent the buildup of coating material with exhaust components. Moreover, coating materials and cleaning liquids can be separated from the exhaust stream and collected to a drain. An exhaust manifold includes an integral rinsing mechanism and a fluid separator. Rinsing can be controlled automatically or manually.

Abstract: A substrate may be treated by impinging the substrate with a cryogenic aerosol spray wherein the cryogenic aerosol spray is formed by expanding a pressurized liquid or liquid/gaseous stream of one or more cryogens through a nozzle at a given distance from the substrate into a process chamber with a pressure of about 1.6.times.10.sup.4 Pascal or less so as to form at least substantially solid aerosol particles of said one or more cryogens downstream from the nozzle by the cooling resulting from the expansion and/or evaporation to form an at least substantially solid particle containing aerosol.

Abstract: A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

Abstract: A nozzle having a series of orifices along a longitudinal length of the nozzle for processing a substrate and which is rotatably adjustable. By the nozzle design of the present invention, liquid is properly distributed along the longitudinal length of the nozzle independently of the angle of the aerosol spray. This allows for the generation of a uniform aerosol stream that is independent of spray angle. The nozzle design of the present invention improves the uniform distribution of liquid within the nozzle, which in addition to providing a more uniform liquid pooling, also substantially eliminates temporal non-uniformities across the nozzle length. Moreover, the present invention is also directed to a nozzle that is translatable in the direction toward or away from the substrate to be processed or parallel to the substrate surface.

Abstract: A chemical blending system for blending two or more constituent chemicals to a desired concentration. One embodiment of the system includes a mix tank, a recirculation line having an inlet and an outlet in the tank, and a pump in the recirculation line for recirculating and mixing the blended chemical. A source of diluent is fluidly coupled to the mix tank through a diluent inlet and supply line. A source of concentrated chemical is fluidly coupled to the recirculation line through a concentrated chemical inlet, supply line, and an adding valve located in the recirculation line between the inlet and pump. A conductivity-type sensor in the recirculation line provides continuous measurements of the blended chemical concentration. A titration analyzer is coupled to the recirculation line to provide periodic blended chemical concentration measurements. A programmable logic control system including a processor and associated memory is coupled to the adding valve, conductivity-type sensor and titration analyzer.

Abstract: The uniformity of SiO.sub.2 etching over the surface area of a substrate using a conventional SiO.sub.2 etching reaction, such as a HF/ROH reaction where R is H or alkyl, is improved when the substrate is pretreated before the etch reaction. In the pretreatment the substrate within a process chamber is exposed to UV illuminated halogen gas. Suitable halogen gases are fluorine and chlorine. Oxygen may optionally also be included with the halogen gas. The pretreatment renders the etching uniformity results substantially independent of the storage history of the wafer.

Abstract: An aerosol cleaning apparatus and a method of treating a substrate within such an apparatus prevent contaminant recirculation by controlling the post-impingement exhaust flow through control of the aerodynamic behavior of the contaminant laden exhaust stream. By the present invention, the post-impingement exhaust flow is divided into two streams. A first stream is the main stream flowing initially over the contaminated side of the wafer and carrying most of the suspended contaminants into the exhaust. The second stream flows initially over the cleaned side of the wafer and eventually into the exhaust stream. A flow separator is provided for dividing the post-impingement aerosol spray into plural flow streams.

Abstract: A temperature control and process for adjusting the temperature of a workstation and a work medium at a workstation to a predetermined temperature. The temperature control comprises a cooling vehicle such as a heat exchanger, a coolant temperature sensor and control, a source of fluid coolant such as a manifold, a recirculating pump, a flow line to circulate the coolant to the workstation with the flow line containing a flow regulator and a heater, a bypass valve for bypassing the flow regulator and heater, and a workstation temperature sensor and control. The workstation temperature control controls the operation of the heater and bypass valve so that the temperature of the coolant is below the desired temperature for the workstation, thus achieving a rapid transient response while avoiding overcooling. The coolant temperature control and workstation temperature control may be in a temperature control computer, thus providing a large number of different operating sequences.

Abstract: A method for qualifying a chemical distribution system and components used therein to ensure that the quantity of contaminants extracted from the system by the chemical is below a predetermined specification level. A volume of the chemical is continuously circulated through the system. The concentrations of extracted contaminants in the chemical are periodically measured, and the contaminant extraction rate determined as a function of the measurements. The system is qualified for production when the extraction rate has decreased to the specification level.

Abstract: A method of recycling and purifying cleaning chemicals used in the production of semiconductor circuits and containing hydrofluoric acid and or hydrochloric acid. Recycling of such chemicals is accomplished using separation and reconstitution steps Hydrofluoric acid and hydrochloric acid cannot be distilled directly from a chemical solution as they form azeotropes with water. A low vapor pressure substance such as sulfuric acid or phosphoric acid is used to break the azeotrope while increasing the purity of the recovered chemicals and decreasing disposal problems. The method is useable at the point of use of the chemicals.

Abstract: Apparatus blending a diluent liquid, i.e., DI water, with a chemical concentrate, a flow duct and mixing tank forming a closed loop for mixing; a pair of flow duct portions each having a conductivity sensor inductively sensing chemical concentration in the blended liquid; a comparator for comparing the outputs of said parallel sensors; a single pump circulating blended liquid around the closed loop and drawing chemical concentrate from a source through an adding valve which cycles open and closed under control of the concentration sensors; the pump also propelling the blended liquid from the closed loop to the point of use, and conductivity sensors existing in individual housings through which the blended liquid flows upwardly to minimize any collection of bubbles adjacent the sensors.

Abstract: Processing gases in an etching chamber for semiconductor wafers are dispersed by a porous plastic membrane interposed between the source of gases and the wafer being processed. A peripheral outlet in the chamber wall exhausting gases is also traversed by a porous plastic membrane.

Abstract: A multi-process bake/chill station for processing semiconductor wafers, comprising an insulated housing with an open bottom of approximately the same diameter as the wafer, a heated bake plate within the housing having a number of vertical gas flow passages through the plate, a plenum between the bake plate and the housing communicating with the gas flow passages, vent openings in the housing communicating with the plenum, a shroud for confining the wafer when it is in close proximity to the bake plate, a chill plate below the bake plate, and a lift for moving the wafer between the bake plate and the chill plate.

Abstract: A device for detecting and locating substrates in a cassette including a homogeneous columnar radiation source adjacent to and radiating the edges of the substrates, rod-shaped directional lenses transmitting and replicating the substrate edges in their field of view and directing the transmitted reflected radiation and image of the field of view onto sensing pixels activated to produce indications of the presence and location of the substrates in the cassette.

Abstract: A megasonic transducer for generating and transmitting megasonic acoustic energy into a water based liquid solution for cleaning particles from substrates immersed in the solution, and having piezo crystals connected to a high frequency electrical power supply and generating 0.5 Megahertz to 2.

Abstract: Empty drum detecting apparatus comprises an upright manifold chamber connected at its intermediate portion to a supply line extended to a supply drum of liquid chemical, and a pump for directing pumped liquid to process equipment utilizing the liquid chemical and having an inlet line. An outlet line is connected to the bottom portion of the upright manifold chamber and connected to the inlet line of the pump; and a shunt line with a flow restriction therein is connected between the upper portion of the manifold chamber and the outlet line for delivering collected gases and liquid to the inlet line and pump. An alternate flow restricting valve may be placed in the outlet line to restrict liquid flow from the lower portion of the manifold chamber. A capacitance proximity sensor is mounted above the inlet of the manifold chamber and senses the liquid level in the manifold chamber to produce an indication of the liquid level.

Abstract: A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.