Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period of time in the treatment process in which the treatment process is being terminated. In a preferred embodiment, conditions that indicate the progress of the treatment on a real time basis are monitored, and the timing of the initiation of the termination process is additionally based on the calculated amount of treatment and treatment rate of the process in progress.

Abstract: Improved methods of rinsing and drying microelectronic devices by way of an immersion processing apparatus are provided for effectively cleaning microelectronic devices. Methods and arrangements control the separation of one or more microelectronic devices from a liquid environment as part of a replacement of the liquid environment with a gas environment. Cleaning enhancement substance, such as IPA, is introduced into the gas environment according to a controlled profile while the separation step is conducted. The controlled profile being directed to the timing of introduction of cleaning enhancement substance, the concentration of cleaning enhancement substance and/or flow rates thereof into the vessel. Controlled timing of gas and cleaning enhancement substance delivery can also improve effectiveness of separation.

Abstract: A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.

Abstract: The present invention relates to methods of making oxide layers, preferably ultrathin oxide layers, with a high level of uniformity. One such method includes the steps of forming a substantially saturated or saturated oxide layer directly or indirectly on a semiconductor surface of a semiconductor substrate, and etchingly reducing the thickness of the substantially saturated or saturated oxide layer by an amount such that the etched oxide layer has a thickness less than the substantially saturated or saturated oxide layer. In certain embodiments, methods of the present invention provide etched oxide layers with a uniformity of less than about +/?10%. The present invention also relates to microelectronic devices including made by methods of the present invention and manufacturing systems for carrying out methods of the present invention.

Abstract: A method is provided for treating an object. In this method, a treating chemical is introduced to a bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid, followed by introducing non-treating liquid into the bath under conditions effective to at least partially envelop the object to be treated in eddy currents of the bath liquid. An apparatus for carrying out this method is also provided. This method is particularly beneficial for objects used in precision manufacturing by treatment with solutions, such as semiconductor wafers or similar substrates.

Abstract: The present invention provides tools and methods of processing microelectronic substrates in which the tools maintain high throughput yet have dramatically lower footprint than conventional tools. In preferred aspects, the present invention provides novel tool designs in which multiple tool functions are overlapped in the x, y, and/or z axes of the tool in novel ways.

Abstract: A robotic manufacturing system may include multiple robots for transporting materials between a series of stages in a manufacturing process. To provide enhanced efficiency, each of these robots may independently operate according to a reverse process flow, cyclical schedule of operation.

Abstract: Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime.

Abstract: Methods and apparatuses for calibrating and teaching a robot to accurately work within a work environment. The present invention preferably provides one or more tactile sensor devices that may be operatively coupled with a robot or positioned at one or more desired locations within a work environment of the robot. In one aspect of the present invention a method comprises the steps of providing a touch sensitive surface in the work environment, causing the touch sensitive surface to contact an object, generating a signal indicative of the position of the contact with respect to the touch sensitive surface, and using information comprising the generated signal to teach the robot the location of the contact in the work environment.

Abstract: The present invention provides tools and methods of processing microelectronic substrates in which the tools maintain high throughput yet have dramatically lower footprint than conventional tools. In preferred aspects, the present invention provides novel tool designs in which multiple tool functions are overlapped in the x, y, and/or z axes of the tool in novel ways.

Abstract: Methods and apparatuses to improve the temperature uniformity of a workpiece being processed on a heated platen of a thermal processing station. A heated platen is enclosed in a housing incorporating an additional heat source that uniformly outputs thermal energy into the process chamber in which the heated platen is positioned. In preferred embodiments, this heat source is positioned in the lid of the housing. It is additionally preferred that the heated lid includes features that provide a gas flow path to introduce to and/or purge gas from the process chamber. In terms of photoresist performance, the improved thermal uniformity provided by using such an additional heat source in the housing, e.g., in the lid, offers improved line width control and line uniformity across a wafer.

Abstract: An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer.

Abstract: A temperature control and process for adjusting the temperature of a workstation and a work medium at a workstation to a predetermined temperature. The temperature control comprises a cooling vehicle such as a heat exchanger, a coolant temperature sensor and control, a source of fluid coolant such as a manifold, a recirculating pump, a flow line to circulate the coolant to the workstation with the flow line containing a flow regulator and a heater, a bypass valve for bypassing the flow regulator and heater, and a workstation temperature sensor and control. The workstation temperature control controls the operation of the heater and bypass valve so that the temperature of the coolant is below the desired temperature for the workstation, thus achieving a rapid transient response while avoiding overcooling. The coolant temperature control and workstation temperature control may be in a temperature control computer, thus providing a large number of different operating sequences.

Abstract: A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO2 and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH4OH).

Abstract: Robot system incorporates a versatile end effector that can be used to transport wafers, map wafers, and autocalibrate the movements of the robotic system. Typically, the end effector of the invention is rotatably and/or pivotably coupled to a robotic arm and includes an optical sensor system whose light path preferably includes a directional component that extends along a lengthwise axis of the end effector. Preferably the end effector is independently movable about at least two axes. These characteristics, singly or in combination, allow the end effector to carry out transport, mapping, and autocalibration functions within a relatively small volume either horizontally, vertically, or at other desired orientations.

Abstract: A valve and a valve assembly are provided that exhibit both highly controlled metering of fluid, as well as a high volume of fluid flow when the valve is in the fully open position. The regulating portion of the valve is provided with channels having different cross-sectional shapes, or channels having different lengths to provide staged flow. The valve is further provided with a fluid boundary element that is movably operably connected to the valve for mounting the valve to the valve body.

Abstract: Described are dispensing apparatuses and methods of their use, the dispensing apparatuses having one or more process chamber inside of a control chamber, and the volume of the process chamber increases or decreases by adding or removing control fluid from the control chamber, with proper valving, to cause fluid to flow into and out of the process chamber, for use in dispensing fluid, especially in precise amounts.