Abstract: An in-process microelectronics device is treated by applying a heated liquid to the surface of the in-process microelectronics device, removing a portion of the liquid from the surface of the in-process microelectronics device and applying anhydrous HF gas to the surface of the in-process microelectronics device.

Abstract: In an automated processing system, a system controller uses a meta-heuristic technique for identifying an optimal or near-optimal control schedule for controlling movements and operations of a robot. In particular embodiments, the system controller uses a genetic algorithm to breed a control schedule for the robot. In particular embodiments, the system controller dynamically updates the control schedule based on system operation.

Abstract: A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered deionized water, to form a cleaning liquid. The cleaning liquid is caused to contact the surface to be cleaned. Acoustic energy is applied to the liquid during such contact. Optionally, the surface to be cleaned can be oxidized, e.g., by ozonated water, prior to cleaning.

Abstract: Robot system incorporates a versatile end effector that can be used to transport wafers, map wafers, and autocalibrate the movements of the robotic system. Typically, the end effector of the invention is rotatably and/or pivotably coupled to a robotic arm and includes an optical sensor system whose light path preferably includes a directional component that extends along a lengthwise axis of the end effector. Preferably the end effector is independently movable about at least two axes. These characteristics, singly or in combination, allow the end effector to carry out transport, mapping, and autocalibration functions within a relatively small volume either horizontally, vertically, or at other desired orientations.

Abstract: The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Abstract: A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, is provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Thus, the method and system of the present invention are able to provide, e.g., ozonated water, continuously, efficiently and without cooling, thus providing a simple, cost efficient method of producing high concentration ozonated water for application to an in-process semiconductor wafer.

Abstract: Described are heating members and related methods, the heating members being usefully for processing substrates such as microelectronic devices, the heating members optionally and preferably comprising a thermal conductive layer prepared to a superior flatness and having thermal transfer properties that facilitate rapid, agile, and uniform heat transfer, with ceramic material being preferred for its construction, and the heating member optionally and preferably including a multi-layer heating element.

Abstract: A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.

Abstract: A valve and a valve assembly are provided that exhibit both highly controlled metering of fluid, as well as a high volume of fluid flow when the valve is in the fully open position. The regulating portion of the valve is provided with channels having different cross-sectional shapes, or channels having different lengths to provide staged flow. The valve is further provided with a fluid boundary element that is movably operably connected to the valve for mounting the valve to the valve body.

Abstract: Improved nozzle design that discharges more powerful, more focused fluid streams through a series of nozzle orifices distributed along a length of the nozzle. The present invention may be incorporated into a wide range of microelectronic device manufacturing processes and equipment types for which an array of more forceful, more focused process streams are desired for treating microelectronic workpieces. The present invention is particularly useful to cryogenically clean microelectronic workpieces, where the improvements allow the conventionally more troublesome smaller contaminant particles to be cleaningly removed with greater particle removal efficiency.

Abstract: Described are heating members and related methods, the heating members being usefully for processing substrates such as microelectronic devices, the heating members optionally and preferably comprising a thermal conductive layer prepared to a superior flatness and having thermal transfer properties that facilitate rapid, agile, and uniform heat transfer, with ceramic material being preferred for its construction, and the heating member optionally and preferably including a multi-layer heating element.

Abstract: A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, are provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Once at the end-use station, the admixture including the liquid and dissolved gas is subjected to controlled dispensing to maintain a high concentration of gas in the dispensed admixture.

Abstract: A semiconductor substrate is heated via exposure to ultraviolet radiation substantially in the absence of a halogen containing chemical and subsequently exposed to a halogen-containing gas in the absence of ultraviolet radiation to remove contaminants therefrom.

Abstract: Improved nozzle design that discharges more powerful, more focused fluid streams through a series of nozzle orifices distributed along a length of the nozzle. The present invention may be incorporated into a wide range of microelectronic device manufacturing processes and equipment types for which an array of more forceful, more focused process streams are desired for treating microelectronic workpieces. The present invention is particularly useful to cryogenically clean microelectronic workpieces, where the improvements allow the conventionally more troublesome smaller contaminant particles to be cleaningly removed with greater particle removal efficiency.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

Abstract: The present invention provides a method of joining a mating face of a first through duct to a mating face of a second duct. Specifically, the method includes bonding the first duct mating face to the second duct mating face to form a bonded structure while the ducts are supported in alignment with each other on an alignment member. Once so bonded, the alignment member may be removed from the bonded structure. Advantageously, the method of the present invention provides an approach for accurately joining ducts together such that the joint is clean, accurate, nondistorted, durable, and impermeable to metal ions. Furthermore, the resultant joints are extremely uniform, and are easy and economical to make using simple equipment, thus making the present invention particularly useful in mass production.

Abstract: The present invention provides a method for treating a substrate, or a plurality of substrates, so that the treatment thereof is enhanced. In particular, the method includes the steps of causing a heated liquid to contact the substrate(s) and causing a processing liquid to contact the substrate(s). Although the processing liquid comprises a heat sensitive agent, the effectiveness of the processing liquid is not substantially diminished by the application of heat due to the fact that the heat is applied by the application of a separate heated liquid rather than by heating the processing liquid itself. Thus, the application of heat can be utilized to enhance the treatment rate of a substrate surface without a corresponding reduction in effectiveness of the processing liquid.

Abstract: An improved method of photoresist removal is disclosed in which a treating solution of ozone and bicarbonate or other suitable radical scavengers is used to treat a substrate for use in an electronic device. The method is particularly well suited to photoresist removal where certain metals such as aluminum, copper and oxides thereof are present on the surface of the substrate. The method is also well suited to the removal of other organic materials as well.

Abstract: The present invention provides methods for selectively stripping tantalum-containing films from oxide surfaces using an etching composition including a fluoride ion source and an acidic oxidant. The etching composition exhibits a high degree of selectivity between tantalum-containing films and oxide films, such that the underlying oxide surface or film layer acts as a stop layer, thereby protecting the underlying substrate from the etching composition. Furthermore, the etching composition is effective at substantially at ambient temperature, thereby avoiding the potential safety concerns that may arise when chemicals are heated in manufacturing situations. Finally, in certain preferred embodiments, the etching composition may further comprise a non-acidic oxidant. In these embodiments of the invention the etching composition is useful to reclaim wafers having at least a portion of the wafer substrate exposed, eg., wafers bearing film stacks comprising TEOS.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.