Abstract: A temperature control and process for adjusting the temperature of a workstation and a work medium at a workstation to a predetermined temperature. The temperature control comprises a cooling vehicle such as a heat exchanger, a coolant temperature sensor and control, a source of fluid coolant such as a manifold, a recirculating pump, a flow line to circulate the coolant to the workstation with the flow line containing a flow regulator and a heater, a bypass valve for bypassing the flow regulator and heater, and a workstation temperature sensor and control. The workstation temperature control controls the operation of the heater and bypass valve so that the temperature of the coolant is below the desired temperature for the workstation, thus achieving a rapid transient response while avoiding overcooling. The coolant temperature control and workstation temperature control may be in a temperature control computer, thus providing a large number of different operating sequences.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

Abstract: Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical is temperature controlled to generate a vapor pressure which is sufficient to operate a mass flow controller at a desired processing pressure without a carrier gas. Prior to entering the process chamber, the enabling chemical gas is pre-mixed with HF and optionally, a carrier gas, all of which are supplied at flow rates independent of each other. By controlling the vapor pressure of the solvent in this way, solvent/HF/carrier mixtures which are not physically possible with carrier gas systems are attainable allowing access to a larger process space.

Abstract: The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Abstract: Transport system that allows in-process microelectronic devices inside a chamber to be easily moved, regardless of whether the chamber is open or sealed. Advantageously, the source of in-process device motion is located outside of the chamber, while the motion is transferred to the wafer via a polymeric bellows. Inside the chamber, there are no parts of the system that rub against other componentry. Consequently, the system generates little, if any, contaminants.

Abstract: A centrifugal spray processor for dispensing a stream of ozonated water toward one or more semiconductor wafers at a non-parallel angle that is inclined from the plane of the surface of the semiconductor wafer. The spray processor includes one or more supports for receiving a plurality of semiconductor wafers and a spray post for dispensing ozonated water from a reservoir onto the semiconductor wafers. The spray post includes a plurality of nozzles that are configured to dispense ozonated water at a generally downward angle toward the surface of the semiconductor wafer. The angle of incidence of the stream of ozonated water from the spray post as measured from the plane of the semiconductor is greater than 0 degrees, and is preferably greater than about 0 degrees and less than or equal to about 30 degrees depending upon the configuration of the spray post and the semiconductor wafers.

Abstract: An apparatus having a processing chamber for processing a semiconductor wafer under evacuated conditions that is capable of transfer of the wafer from the processing chamber under conditions that are substantially equal to the pressure of an adjacent environment. In a preferred embodiment, the processing chamber is pressurized and vented with a source of high purity dry gas that is diffused into the chamber through a diffuser to pressurize the processing chamber after processing of the wafer is completed. A chamber equalization port between the processing chamber and the adjacent environment is opened to maintain the pressure within the chamber at or slightly above the pressure of the adjacent environment, and the chamber valve is then opened. The wafer can then be removed from the processing chamber, and a new wafer can be inserted. The chamber is then sealed by closing the chamber valve and the equalization port, and the atmosphere within the processing chamber is evacuated to a desired level.

Abstract: This invention relates to a method and system for establishing and maintaining a precise concentration of dissolved gas in a liquid. More particularly, the invention relates to a method and system of establishing and maintaining a precise concentration of dissolved gas in a liquid by utilizing a gas blend comprising a sufficient concentration of the desired gas so as to be in equilibrium with the desired concentration of the gas to be dissolved in the liquid, i.e., a “matched gas blend”, to prepare a liquid admixture comprising the desired concentration of the gas. In this manner, the method and system of the present invention are able to produce liquid admixtures comprising precise concentrations of dissolved gas suitable for use in applications with tight specifications, and further, are capable of delivering the liquid admixture so produced to a point of use with substantially no loss of dissolved gas.

Abstract: A method for treating a microelectronics substrate to produce a surface with improved characteristics for subsequent processing. The substrate is treated with HF, IPA, and an inert gas in a narrow range of conditions to remove unwanted oxide layers. The resulting surface is useful for processes like epitaxial deposition which benefit from a clean silicon surface with a low oxygen content.

Abstract: A process chamber within which a wafer can moved between a transfer position, an etch position and a liquid application position with a single motion system. The process chamber is a spin-type apparatus including a rotatable chuck driven by a spin motor combined with a movable pedestal. The pedestal is preferably movable along with the chuck and the spin motor with a wafer supporting portion of the chuck located in an internal chamber that is defined by a rinse bowl portion of a lower chamber assembly that is sealingly connected to the top cover member. The pedestal is displaceable between any and all of its positions as driven by a single linear motion driving device. In a first position, the pedestal itself can also form an effective seal with the top cover member to create an etching chamber. In a transfer position, the pedestal can be positioned to provide access through a wafer transfer gate, such as by a robot.

Abstract: A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

Abstract: The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate.The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Abstract: A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

Abstract: A method and apparatus are presented for encapsulating an article comprising, for example, a substantially circular turntable (12) having first and second opposed major surfaces (16 & 18), each major surface sharing an outer peripheral sidewall (20). First and second thermoplastic pre-forms (28 & 30) are fitted to sandwich the article and are sealed to encapsulate by rotating a thermoplastic band (32) onto and around the exposed seam (48) while applying pressure (70) and heat (74) to obtain a fused bonded reliable encapsulating joint (72). The method and apparatus presented are particularly well suited for encapsulating metal platens, holders, and internal parts of process equipment used in the semiconductor manufacturing industry to avoid contamination from the encapsulated metal.

Abstract: A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.

Abstract: An improved method of photoresist removal is disclosed in which a treating solution of ozone and bicarbonate or other suitable radical scavengers is used to treat a substrate for use in an electronic device. The method is particularly well suited to photoresist removal where certain metals such as aluminum, copper and oxides thereof are present on the surface of the substrate. The method is also well suited to the removal of other organic materials as well.

Abstract: Systems and methods that make it possible to rapidly cycle a workpiece through a temperature/time profile over a wide temperature range, e.g., 0.degree. C. to 350.degree. C., without having to lift and transfer the workpiece between separate baking and chilling mechanisms. The present invention is based in part upon the concept of using a low thermal mass, thermally conductive heating member to support a workpiece, such as a microelectronic device, during both baking and chilling operations. While supporting the workpiece on one surface, the other surface of the heating member can be brought into and out of thermal contact with a relatively thermally massive chill plate to easily switch between baking and chilling operations. A simple mechanism is all that is required to either physically separate the heating member and chill plate to accomplish the most rapid heating, or the simple mechanism adjoins the heating member and chill plate to accomplish the most rapid chilling.

Abstract: Electroless plating of very thin metal films, such as copper, is accomplished with a spray processor. Atomized droplets or a continuous stream of an electroless plating solution are sprayed on a substrate. The electroless plating solution may be prepared by mixing a reducing solution and a metal stock solution immediately prior to the spraying. The deposition process may be carried out in an apparatus which includes metal stock solution and reducing reservoirs, a mixing chamber for forming the plating solution, optionally an inert gas or air (oxygen) source, a process chamber in which the solution is sprayed on the substrate and a control system for providing solutions to the mixing chamber and the process chamber in accordance with a predetermined program for automated mixing and spraying of the plating solution. The process can be used to form metal films as thin as 100 .ANG.

Abstract: Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical is temperature controlled to generate a vapor pressure which is sufficient to operate a mass flow controller at a desired processing pressure without a carrier gas. Prior to entering the process chamber, the enabling chemical gas is pre-mixed with HF and optionally, a carrier gas, all of which are supplied at flow rates independent of each other. By controlling the vapor pressure of the solvent in this way, solvent/HF/carrier mixtures which are not physically possible with carrier gas systems are attainable allowing access to a larger process space.

Abstract: Stiction in a microstructure may be eliminated by directing a cryogenic aerosol at the portion of the microstructure subject to stiction with sufficient force so as to free the portion of the microstructure.