Patents Assigned to Fudan University
  • Patent number: 10430096
    Abstract: A hybrid storage device includes a controller, a volatile storage unit, and a non-volatile storage unit. When the hybrid storage device is in a first working mode, the volatile storage unit is in an enabled state, and the non-volatile storage unit is in a disabled state; when the hybrid storage device is in a second working mode, the non-volatile storage unit is in an enabled state, and the volatile storage unit is in a disabled state. When the hybrid storage device runs in the first working mode, and when detecting that a running parameter of the computer meets a first switching condition, the controller enables the non-volatile storage unit, copies data in the volatile storage unit to the non-volatile storage unit, and switches the hybrid storage device to the second working mode.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: October 1, 2019
    Assignees: Huawei Technologies Co., Ltd., Fudan University
    Inventors: RenHua Yang, Junfeng Zhao, Wei Yang, Yinyin Lin
  • Patent number: 10403348
    Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: September 3, 2019
    Assignee: Fudan University
    Inventors: Anquan Jiang, Wenping Geng
  • Patent number: 10223273
    Abstract: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: March 5, 2019
    Assignees: Huawei Technologies Co., Ltd., Fudan University
    Inventors: RenHua Yang, Junfeng Zhao, Wei Yang, Yuangang Wang, Yinyin Lin
  • Publication number: 20190025339
    Abstract: A scanning probe microscope of the present disclosure includes: a room-temperature bore superconducting magnet including a liquid helium-consumption free closed-cycle cooling system, a superconducting magnet, and a chamber having a room-temperature bore; and a scanning probe microscope including a scanning head, a vacuum chamber, and a vibration isolation platform; and a computer control system. The room-temperature bore superconducting magnet is cooled by the cryogen-free closed-cycle cooling system which eliminates the dependence on liquid helium for high magnetic field operation. There is no physical contact between the scanning probe microscope and the superconducting magnet connected to the closed-cycle cooling system. The scanning probe microscope can achieve atomic-scale spatial resolution. The temperature of the scanning probe microscope is not restricted by the low temperature conditions for operation of the superconducting magnet.
    Type: Application
    Filed: December 16, 2016
    Publication date: January 24, 2019
    Applicant: Fudan University
    Inventors: Shiwei WU, Zeyuan SUN, Shuai ZHANG, Di HUANG, Shengyu ZHOU, Lifeng YIN, Chunlei GAO, Jian SHEN
  • Publication number: 20190000623
    Abstract: A valve clamp for treating the cardiac valve regurgitation. The valve clamp includes a first clamp part, a second clamp part, and a connecting part. The first clamp part has the first clamping arms. The second clamp part has a corresponding number of second clamping arms. The first clamping arm and the second clamping arm can clip an object therebetween through the interaction force generated by closing and pushing against each other. Moreover, the valve clamp can also include a closed ring, which is sleeved outside the periphery of the first clamp part and the periphery of the second clamp part, such that the clamping arms can close as needed, and the clamping is tighter. The valve clamp has the advantages of a minimally invasive implantation, a simple manufacture, a low difficulty of operation, good effects, etc.
    Type: Application
    Filed: February 15, 2017
    Publication date: January 3, 2019
    Applicant: Zhongshan Hospital, Fudan University
    Inventors: Wenzhi Pan, Daxin ZHOU, Junbo GE, Leilei CHENG
  • Patent number: 10092592
    Abstract: The present invention belongs to the field of medicine technology, particularly relating to an application of cyclic dinucleotide (cGAMP) in tumor treatment. Researches carried out in the present invention show that, cGAMP can inhibit growth of many types of tumor cells, with remarkable anti-tumor effect, thus, it can be used in preparation of anti-tumor drugs; and the prepared anti-tumor drugs have low toxicity and favorable effect. Proved by a subcutaneous tumor model in nude mice, cGAMP has a remarkable inhibition effect on tumors of human gastric carcinoma cell line MNK-45, human lung adenocarcinoma cell line A549, human colorectal carcinoma cell line Lovo, human hepatocellular carcinoma cell line SMMC-7721, human prostatic carcinoma cell line PC-3 and human pancreatic carcinoma cell SW1990, which are subcutaneously implanted in nude mice, and also proved by animal acute toxicity experiment. cGAMP has a relatively low acute toxicity, therefore and may be used for preparing anti-tumor drugs.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: October 9, 2018
    Assignee: Fudan University
    Inventors: Xiangshi Tan, Tiejun Li, Qiming Xu, Jie Pan, Yaocheng Rui, Hao Cheng, Yuefan Zhang
  • Patent number: 10086067
    Abstract: The present disclosure relates to a method of overcoming host immune tolerance in a subject having chronic hepatitis B virus (HBV) infection, comprising administering to the subject an immunomodulatory agent and a recombinant HBV vaccine, such that the immune tolerance of the chronic HBV infection in the subject is overcome. Moreover, the present disclosure relates to a method of treating chronic HBV infection in a subject in need thereof, comprising administering to the subject a first anti-viral agent, an immunomodulatory agent and a recombinant hepatitis B vaccine, such that the HBV infection in the subject is treated.
    Type: Grant
    Filed: January 26, 2016
    Date of Patent: October 2, 2018
    Assignee: Fudan University
    Inventors: Bin Wang, Xianzheng Wang, Jiming Zhang
  • Patent number: 10059712
    Abstract: The present invention relates to an N-benzyl tryptanthrin derivative, and preparation method and use thereof. The N-benzyl tryptanthrin derivative of the present invention is characterized in that the derivative has a structural general formula as represented by formula 1, wherein each group is defined as in the specification. The preparation method of the compound is simple, has mild conditions and high yield, and is suitable for industrial production. The N-benzyl tryptanthrin derivative has good indoleamine-2,3-dioxy-genase (IDO) inhibitory activity, and can be used for treating diseases having the pathological feature of IDO-mediated tryptophan metabolism.
    Type: Grant
    Filed: November 12, 2014
    Date of Patent: August 28, 2018
    Assignee: Fudan University
    Inventors: Qing Yang, Chunxiang Kuang
  • Patent number: 10011867
    Abstract: This invention is directed to a guide positioning sequencing technology of whole-genome DNA methylation. The invention provides a new detection method of nucleic acid methylation. In particular, a concept of “positioning” in the detection of nucleic acid methylation is provided. Specifically, a portion of a sequence is used for genome wide positioning and the other portion of the sequence is used for methylation detection in sequencing, thereby solving/defeating previously existing challenges in methylation detection and bioinformatics analysis of a genome.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: July 3, 2018
    Assignee: Fudan University
    Inventors: Wenqiang Yu, Yan Li, Feizhen Wu
  • Publication number: 20180118815
    Abstract: The invention provides a construct comprising two or more fusion proteins of Formulas (I)-(IV): A-(optional linker)-C-(optional linker)-B (Formula I), B-(optional linker)-D-(optional linker)-E-(optional linker)-B (Formula II), A-(optional linker)-C (Formula III), and B-(optional linker)-D-(optional linker)-E (Formula IV), wherein A denotes an antibody or antibody fragment, B denotes a single domain CD4, C denotes an immunoglobulin light chain constant region D denotes an immunoglobulin heavy chain constant region, and E denotes an Fc region or a portion thereof that is optionally defucosylated.
    Type: Application
    Filed: December 16, 2015
    Publication date: May 3, 2018
    Applicants: The United States of America, as Represented by the Secretary, Dept. of Health and Human Resources, Fudan University
    Inventors: Dimiter S. Dimitrov, Weizao Chen, Tianlei Ying
  • Publication number: 20180096717
    Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
    Type: Application
    Filed: April 12, 2016
    Publication date: April 5, 2018
    Applicant: Fudan University
    Inventors: Anquan JIANG, Wenping GENG
  • Publication number: 20180085449
    Abstract: Provided in the present application are a recombinant sendai virus vector vaccine expressing immunodominant antigens of mycobacterium tuberculosis, and can be used as therapeutic and preventive antituberculosis vaccine.
    Type: Application
    Filed: April 19, 2016
    Publication date: March 29, 2018
    Applicants: Shanghai Public Health Clinical Center, Fudan University, ID Pharma Co., Ltd.
    Inventors: Xiao-Yong Fan, Tsugumine Shu, Zhi-Dong Hu, Douglas B. Lowrie
  • Publication number: 20170300419
    Abstract: A memory access method, a storage-class memory, and a computer system are provided. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory (DRAM) and a storage-class memory (SCM). The memory controller sends a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM.
    Type: Application
    Filed: June 30, 2017
    Publication date: October 19, 2017
    Applicants: HUAWEI TECHNOLOGIES CO.,LTD., Fudan University
    Inventors: RenHua Yang, Junfeng Zhao, Wei Yang, Yuangang Wang, Yinyin Lin
  • Patent number: 9748406
    Abstract: The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: August 29, 2017
    Assignee: Fudan University
    Inventors: Pengfei Wang, Wei Zhang, Qingqing Sun
  • Patent number: 9735001
    Abstract: The invention “Ion Trap Array (ITA)” pertains generally to the field of ion storage and analysis technologies, and particularly to the ion storing apparatus and mass spectrometry instruments which separate ions by its character such as mass-to-charge ratio. The aim of this invention is providing an apparatus for ion storage and analysis comprising at least two or more rows of parallel placed electrode array wherein each electrode array includes at least two or more parallel bar-shaped electrodes, by applying different phase of alternating current voltages on different bar electrodes to create alternating electric fields inside the space between two parallel electrodes of different rows of electrode arrays, multiple linear ion trapping fields paralleled constructed in the space between the different rows of electrode arrays which are open to adjacent each other without a real barrier.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: August 15, 2017
    Assignee: Fudan University
    Inventors: Chuanfan Ding, Li Ding
  • Patent number: 9685216
    Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 20, 2017
    Assignee: Fudan University
    Inventors: Anquan Jiang, Jun Jiang, Wenping Geng, Zilong Bai
  • Patent number: 9658052
    Abstract: A method for reducing interference from scattered light/reflected light of an interference path by generating carrier through phase. Phase modulation is applied on the terminal of a fiber path, and a target signal is separated from an interference signal by selecting a specific working point, to obtain a purer target signal, thereby lengthening the measurement distance. The signal demodulation manner used in this method is different from the traditional manner of modulation performed by generating a carrier through the phase, and does not need to use the modulation frequency as the reference signal during demodulation, so this manner is easily implemented. The method is applicable to long-distance pipeline monitoring and wide-range fiber perimeter security, and especially to an application environment in which the modulation end is far away from the signal demodulation end.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: May 23, 2017
    Assignee: Fudan University
    Inventors: Bo Jia, Qian Xiao, Yuan Wu, Pang Bian
  • Patent number: 9640377
    Abstract: This invention is related to a tandem mass spectrometric analysis method in ion trap mass analyzer. Such method comprise three stages as represented by selective isolation, collision induced disassociation and mass scanning of ion. At the collision induced isolation stage, this invention is expected to endow parent ion of certain mass-charge ratio with energy through resonance excitation by changing cycle of radio frequency signals, namely frequency of radio frequency voltage imposed on the ion trap; such high-energy ions produced through resonance excitation are to be disassociated through collision with neutral molecules in the ion trap, which will further generate product ion to realize tandem mass spectrometric analysis.
    Type: Grant
    Filed: July 4, 2014
    Date of Patent: May 2, 2017
    Assignee: Fudan University
    Inventors: Fuxing Xu, Liang Wang, Chuanfan Ding
  • Publication number: 20160358639
    Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 8, 2016
    Applicant: Fudan University
    Inventors: Anquan JIANG, Jun JIANG, Wenping GENG, Zilong BAI
  • Patent number: 9508811
    Abstract: The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: November 29, 2016
    Assignee: Fudan University
    Inventors: Pengfei Wang, Wei Zhang, Qingqing Sun