Abstract: A power system causes no variation in output voltage during switching from a linear regulator to a DC-DC converter. The power system switches off a drive circuit of a DC-DC converter and supplies voltage to a load from a linear regulator if the load is light, while the power system halts voltage supply to the load from the linear regulator and switches the drive circuit of the DC-DC converter on if the load is heavy. During a set period of time after the load changes from light to heavy, the linear regulator continues to supply voltage to the load while the DC-DC converter supplies a pseudo feedback signal to a control circuit in place of a feedback signal, with the drive circuit left off to control the time ratio at switching elements and, thus minimizing output voltage variations.

Abstract: An organic EL display includes an organic EL device comprising lower electrodes, upper electrodes and an organic EL layer therebetween, and color-converting filter layers that absorb light emitted from the organic EL device and carry out color conversion, a layer having a color filter function of transmitting only the color of the light emitted from the organic EL device is provided between the color-converting filter layers and the organic EL device, whereby there is provided an organic EL display that has good display quality, with a high contrast ratio under illumination with a fluorescent lamp, sunlight or the like.

Abstract: A method for producing a magnetic recording medium in which the noise of the magnetic recording medium is reduced and the thermal stability of the recorded magnetization is improved, while enabling easy writing to be carried out by a recording head, is disclosed. The magnetic recording medium of the present invention includes an underlayer having an hcp crystal structure and a magnetic layer produced by a multilayer lamination of Co/Pt or the like. The deposition rate of the underlayer is equal to or lower than 0.7 nm/second. The magnetic layer contains added silicon oxide at 1 to 10 mol %. The present method includes a step for subjecting the surface of the underlayer to Ar gas mixed with oxygen of a mass/flow rate ratio of 1% to 10% under a gas pressure of 0.1 to 10 Pa for 1 to 10 second(s). The magnetic recording medium may include an orientation control layer and a soft magnetic backing layer. Ku, Ku1, and Ku2 are controlled to provide both of thermal stability and easy writing.

Abstract: Rotary positioners integrally and pivotally stack a read magnetic head for reading a master disk and servo heads for writing to each surface of magnetic disks, the master disk and magnetic disks being stacked on a shaft of a spindle motor. Every surface of every magnetic disk is written by the servo heads in parallel while sharing a range of tracks. Simultaneously with the writing, checking magnetic heads stacked on a checking-dedicated rotary positioner read written data on the master disk and on each surface of the magnetic disks. A comparison logic circuit compares the read data from the magnetic disk surfaces with the data from the master disk. If an inconsistency is found, the contents of the master disk are overwritten on the corresponding magnetic disk surface through a correction servo pattern generator by the checking magnetic head.

Abstract: A perpendicular magnetic recording medium is disclosed that exhibits reduced media noise and enhanced thermal stability of recorded magnetization, and thus provides a medium of high recording density and excellent read-write performance. The perpendicular magnetic recording medium comprises a magnetic film on a nonmagnetic substrate. The magnetic film is a multilayered lamination film composed of alternately laminated first magnetic layers of cobalt and second magnetic layers of palladium, the second magnetic layers containing SiO2. By setting a ratio of Ku2 to Ku to a value not smaller than a specified value, the compatibility between the ease of writing-in to the perpendicular magnetic recording medium by a head and the thermal stability of recorded magnetization is more improved.

Abstract: A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high speed switching. The semiconductor device has a breakdown-voltage sustaining layer, such as an n?-type drift layer, and a well region, such as a p-type well region, in the breakdown-voltage sustaining layer. The resistivity ? (?cm) of the breakdown-voltage layer is within a range expressed in terms of the breakdown voltage Vbr (V). The semiconductor device also has stripe shaped surface drain regions that extend from the well region and are surrounded by the well region. The surface area ratio between surface drain regions and the well region, which includes the source region, is from 0.01 to 0.2.

Abstract: A method of evaluating a thickness of a film during a polishing process includes the steps of irradiating light onto a surface of the film during the polishing process; obtaining a differential signal of reflection spectra at a polishing time t and a polishing time t??t with a time difference ?t from the polishing time t; and analyzing the differential signal to obtain a thickness d of the film at the polishing time t.

Abstract: An active region in a semiconductor device is made up of a parallel p-n layer including a first p-semiconductor layer and a first n-semiconductor with the widths and total amounts of impurities being equal to each other to provide a structure in which charges are balanced. A section parallel to stripes in the parallel p-n layer in an inactive region is made up of a second parallel p-n layer including a second p-semiconductor layer, with its width larger than that of the first p-semiconductor layer, and a second n-semiconductor layer with its width smaller than that of the first n-semiconductor layer. The total amount of impurities in the second p-semiconductor layer is made larger than that in the second n-semiconductor layer to provide a structure in which charges are made unbalanced.

Abstract: A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

Abstract: Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms thereof is dissolved, since the inter-band scattering is prevented from causing, and since the effective electron mass is reduced due to the crystal lattice interval change, the carrier mobility in the SiC crystal is improved, the resistance of the SiC crystal is reduced and, therefore, the on-resistance of the SiC semiconductor device is reduced.

Abstract: A transparent first substrate and a second substrate of an organic multicolor emission and display device are positioned opposite to each other with a predetermined clearance and sealed with a gap material that performs desiccating a surrounding atmosphere. The gap material advantageously has different void fractions between in an inner portion facing a sealed space within the device and in an outer portion facing an external atmosphere. Featuring the above structure, an organic multicolor emission and display device of color conversion system has been provided that maintains stable light emitting performance for a long period and exhibits excellent visibility angle characteristic.

Abstract: A method of manufacturing a lateral trench-type MOSFET exhibiting a high breakdown voltage and including an offset drain region around a trench. Specifically, impurity ions are irradiated obliquely to the side wall of a trench to implant the impurity ions only into to the portion of a semiconductor substrate along the side wall of trench, impurity ions are irradiated in parallel to the side wall of trench to implant the impurity ions only into to the portion of semiconductor substrate beneath the bottom wall of trench; the substrate is heated to drive the implanted impurity ions to form an offset drain region around trench and to thermally oxidize semiconductor substrate to fill the trench 2 with an oxide. Alternatively, the semiconductor substrate is oxidized to narrow trench with oxide films leaving a narrow trench and the narrow trench left is filled with an oxide.

Abstract: A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

Abstract: A method of manufacturing a magnetic recording media includes a magnetic recording layer of a granular magnetic layer that has ferromagnetic crystal grains and an oxide nonmagnetic grain boundary or a nitride nonmagnetic grain boundary surrounding the ferromagnetic crystal grains. It further has an overcoating layer on the granular magnetic recording layer. The overcoating layer contains a nonmagnetic metal or a nonmagnetic alloy that can be diffused into the nonmagnetic grain boundary. The atoms coated on the granular magnetic recording layer diffuse into the nonmagnetic grain boundary even without being annealed, and promote to isolate the ferromagnetic crystal grains from each other. The overcoating can be removed after its formation to reduce the magnetic gap between the magnetic recording layer and the magnetic recording head.

Abstract: A simplified method of manufacturing a color-converting filter is disclosed which permits highly detailed patterning. Color filter layers are formed on a transparent substrate, a colorant layer containing a color-converting colorant is formed on the color filter layers, and the colorant layer is exposed via the transparent substrate and the color filter layers using colorant-decomposing light. Color-converting layers are formed in positions corresponding to the color filter layers. The color-converting colorant is decomposed by light outside the wavelength region transmitted by the color filter layers. The colorant-decomposing light contains a wavelength component that decomposes the color-converting colorant, and the color-converting layers emit, through wavelength distribution conversion, light that will be transmitted by the color filter layers.

Abstract: A top emission type organic EL device is disclosed that contains, as a cathode, a transparent electrode that has low reflectivity over a broad wavelength region. The organic EL device has at least lower electrodes, an organic EL layer and an upper electrode formed sequentially on a supporting substrate. The upper electrode is formed from a plurality of transparent electrode layers having different refractive indices to one another. Also disclosed is a method of manufacturing such an organic EL device.

Abstract: An organic EL device is disclosed which has a buffer structure that mitigates sputtering damage inflicted in the process of forming a transparent top electrode, that exhibits sufficient electrical conductivity and light transmissivity, and that exhibits high electron injection efficiency. An organic EL device according to the invention includes, sequentially disposed on a substrate, a bottom electrode, an organic EL layer including at least an organic light emissive layer, a buffer structure, and a transparent top electrode through which light is emitted. The buffer structure is a multilayer structure having two or more first type buffer layers containing a transparent material and two or more second type buffer layers containing a metal or an alloy, with each of the second type buffer layers being disposed on one of the first type buffer layers. A method for manufacturing such an organic EL device also is disclosed.

Abstract: An uninterruptible power supply system prevents an output voltage from dropping due to an operation delay of a relay for isolating an alternating-current power source side and avoids an unexpected current flowing between the alternating-current power source side and the uninterruptible power supply system side. When short circuit occurs, a parallel converter connected in parallel to input terminals connected to an alternating-current power source is made to operate so that the output voltage thereof becomes “0” or the input voltage Vin and a series inverter connected in series between an input relay and one of output terminals is made to carry out a compensating operation with a smoothing capacitor taken as a power source so that a value of an applied voltage to the output terminals becomes an output voltage command value Vout*.

Abstract: A fabrication method of a semiconductor wafer can fill trenches formed in a semiconductor substrate with an epitaxial film with high crystal quality without leaving cavities in the trenches. The trenches are formed in the first conductivity type semiconductor substrate. Planes exposed inside the trenches are made clean surfaces by placing the substrate in a gas furnace, followed by supplying the furnace with an etching gas and carrier gas, and by performing etching on the exposed planes inside the trenches by a thickness from about a few nanometers to one micrometer. The trenches have a geometry opening upward through the etching. Following the etching, a second conductivity type semiconductor is epitaxially grown in the trenches by supplying the furnace with a growth gas, etching gas, doping gas and carrier gas, thereby filling the trenches. Instead of making the trenches slightly-opened upward, their sidewalls may be made planes enabling facet formation.