Abstract: A semiconductor device and a method of forming thereof have a semiconductor substrate, an active region, and an inclined trench formed around the outer periphery of the active region. The semiconductor substrate at least includes an n-type high impurity concentration layer inhibiting a depletion layer from spreading, an n-type low impurity concentration drift layer, and a p-type high impurity concentration layer forming a p-n main junction between the drift layer, which are arranged in this order. In the active region, an effective current flows in the direction of the thickness of the substrate. The inclined trench cuts the p-n main junction at a positive bevel angle from the semiconductor substrate surface on the side of the n-type high impurity concentration layer to penetrate through the substrate for separating it into chips.

Abstract: The organic EL display device includes first and second sets of stripe electrodes; third and fourth sets of stripe electrodes crossing the stripe electrodes of the first and second sets; and pixels, each including a light emitting section, one of the electrodes of which is connected electrically to the stripe electrode of the first set, a transistor element connected electrically to the stripe electrode of the fourth set and to the other electrode of the light emitting section, the transistor element controlling the current flowing through the light emitting section, a first rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the second set, a second rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the third set, and a capacitor connected to the gate electrode of the transistor element and the stripe electrode of the fourth set.

Abstract: A semiconductor device including an n-type semiconductor substrate, a p-type channel region and a junction layer provided between the n-type semiconductor substrate and the p-type channel region is disclosed. The junction layer has n-type drift regions and p-type partition regions alternately arranged in the direction in parallel with the principal surface of the n-type semiconductor substrate. The p-type partition region forming the junction layer is made to have a higher impurity concentration than the n-type drift region. This enables the semiconductor device to have an enhanced breakdown voltage and, at the same time, have a reduced on-resistance.

Abstract: A vacuum lamination device for laminating a lamination member includes a base plate having an uneven surface contacting the lamination member for placing the lamination member, a frame member fixed to the base plate and having a discharge port for evacuating a processing space, and a cover member for hermetically sealing the processing space in the lamination process. The lamination member is placed on the uneven surface, and the cover member is placed so as to cover the lamination member. Then, a gaseous material in the processing space is evacuated through the discharge port while heating the processing space.

Abstract: The invention provides a semiconductor device exhibiting a stable and high breakdown voltage, which is manufactured at a low manufacturing cost. The semiconductor device of the invention includes an n-type silicon substrate; a p-type base region in the surface portion of substrate; an n-type drain region in the surface portion of n-type substrate; a p-type offset region in the surface portion of n-type substrate; an n-type source region in the surface portion of p-type base region; a p-type contact region in the surface portion of p-type base region; a gate electrode above the extended portion of p-type base region extending between n-type source region and n-type substrate (or p-type offset region), with a gate insulation film interposed therebetween; an insulation film on gate electrode and p-type offset region; a source electrode on n-type source region; and a drain electrode on n-type drain region.

Abstract: An organic EL panel is discloses that includes a substrate and a segment display section provided on the substrate. The segment display section includes an organic EL light emitting section and plural kinds of color modulating sections. The organic EL light emitting section has a single reflective electrode, an organic EL layer, a shadow mask having a plurality of openings, and a single transparent electrode. The plural kinds of color modulating sections are arranged adjacent to the substrate, and each of the plural kinds of color modulating sections is divided into a plurality of subsections. Each of the plural kinds of color modulating sections can be composed of either a color filter layer or a laminated structure of a color filter layer and a color conversion layer. Emitting color of the segment display section can be adjusted by the positions and number of the openings arranged in the shadow mask.

Abstract: The present invention provides an electronic part mounting method which enables joining of electrodes at a low temperature and within a short time, can obtain the high reliability and, further, enables joining at a fine pitch. In an electronic part mounting method which joins circuit electrodes which are formed over a circuit board and die electrodes which are formed over the electronic parts thus mounting the electronic parts on the circuit board, a low-melting-point metal layer is preliminarily formed over the circuit electrode and/or the die electrode and, thereafter, the circuit electrode and the die electrode are arranged to face each other and are heated and pressurized for melting low-melting-point metal thus diffusing the low-melting-point metal into the circuit electrode and the die electrode by solid-liquid diffusion.

Abstract: A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions. The bottom of each trench is over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof.

Abstract: An OTFT is formed by forming a pair of recesses, one being a groove and another being groove or a hole. A source electrode is formed by filling one of the recesses. A drain electrode is formed by filling the other one of the recesses. A film of organic semiconductor material is formed on the source electrode and the drain electrode and makes electrical contact therewith. A gate insulating film is formed on the film of organic material, and a gate electrode is formed on the gate insulating film. The method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode and the drain electrode formed on the substrate such as a plastic substrate by an inexpensive process.

Abstract: The present invention provides a switching element in which an organic bistable material is disposed between two electrodes, this element having a high ratio of ON current to OFF current, a high threshold voltage, and a small spread. A switching element in which an organic bistable material layer comprising an organic bistable material having two stable values of resistance with respect to the applied voltage is disposed between at least two electrodes, wherein an organic material layer is provided between the organic bistable material layer and at least one of the electrodes. Electrically conductive fine particles are preferably dispersed in the organic materials layer.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: A filter and a display employing a color conversion mode that can simplify production, achieve high definition patterning, and enhance color conversion efficiency for every primary color is disclosed. A color filter with color conversion function includes a transparent substrate, a plurality types of color filter layers disposed on the transparent substrate, and a color conversion layer containing at least one color conversion material and disposed in one-piece over the color filter layers. At least one of the color conversion materials absorbs a wavelength region of incident light and emits light in different wavelength region from the absorbed wavelength region, and a region in the color conversion layer of passage of the incident light to one color filter layer exhibits higher light transmissivity to the incident light than regions in the color conversion layer of passage of the incident light to the other color filter layers.

Abstract: A top emission type organic EL device is disclosed that contains, as a cathode, a transparent electrode that has low reflectivity over a broad wavelength region. The organic EL device has at least lower electrodes, an organic EL layer and an upper electrode formed sequentially on a supporting substrate. The upper electrode is formed from a plurality of transparent electrode layers having different refractive indices to one another. Also disclosed is a method of manufacturing such an organic EL device.

Abstract: An organic light emitting device of high quality is disclosed that can be produced by a simple method and rarely causes color degradation due to current in the device. In one embodiment, the organic light emitting device comprises a substrate, a lower electrode disposed over the substrate, an organic light emitting layer disposed over the lower electrode and in electrical contact with the lower electrode, and an upper electrode disposed over the organic light emitting layer and in electrical contact with the organic light emitting layer. The upper electrode includes a first upper electrode element, a color conversion layer disposed on the first upper electrode element, and a second upper electrode element disposed on the color conversion layer and in electrical contact with the first upper electrode element.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: The quantity of oxide contained in a magnetic layer is controlled to control the crystal grains and the segregation structure for ensuring low noise characteristic in a granular magnetic layer of a perpendicular magnetic recording medium. The granular magnetic layer consists of ferromagnetic crystal grains and a nonmagnetic grain boundary region mainly of an oxide surrounding the ferromagnetic crystal grains. The perpendicular magnetic recording medium has a nonmagnetic underlayer composed of a metal or alloy having hexagonal closest-packed crystal structure. The ferromagnetic crystal grain is composed of an alloy containing at least cobalt and platinum. The volume proportion of the nonmagnetic grain boundary region mainly of the oxide falls within a range of 15% to 40% of the volume of the total magnetic layer.

Abstract: In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of channel resistance. A 4H-SiC substrate having a major face thereof that is generally a {0001} face and having an off angle ?. The trench is formed with the standard deviation ? in scattering of the angle formed by a trench side wall face and a substrate major face within a wafer face. By setting the designed value of the angle formed by the trench side wall face and the substrate major face at an any angle ranging from [(60 degrees)+2?] to [(90 degrees)?tan?1 (0.87×tan ?)?2?] in forming the trench in the SiC substrate, a semiconductor device in which the angle formed by the trench side wall face and the substrate major face is 60 degrees or more but not more than [(90 degrees)?tan?1 (0.87×tan ?)] can be obtained.

Abstract: A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

Abstract: An organic EL light emitting device and a color conversion filter are placed in an environment in which concentrations of water and oxygen are controlled. A peripheral sealing agent with a ring shape is applied around the color conversion filter, and a filler material is applied over the color conversion filter and inside the peripheral sealing agent. The organic EL light emitting device and the color conversion filter are transferred into a vacuum chamber, which is then evacuated. The organic EL light emitting device and the color conversion filter are preliminarily aligned and then bonded to obtain an aggregate. The aggregate is removed to an environment in which concentrations of water and oxygen are controlled and pressure is at atmospheric pressure, and irradiated with ultraviolet radiation to cure the peripheral sealing agent. The method reduces manufacturing costs and prevents inclusion of water in the internal space.

Abstract: A method of manufacturing a magnetic recording medium having a lubrication layer is disclosed. The method includes a step of simultaneously pressing a processing tape including a solvent against the edge face and the peripheral part of the data surface of the magnetic recording medium using a tape pressing device to wipe a liquid lubricant off while rotating the magnetic recording medium, after the liquid lubricant has been applied onto the protective layer. The non-magnetic substrate preferably has a thickness of 0.635 mm or less. The wiping with the processing tape is preferably performed after a heating process that follows the application of the liquid lubricant. The method makes the thickness of a lubrication layer of a magnetic recording medium uniform in a peripheral part thereof to allow a magnetic head to fly with stability.