Abstract: An organic EL display device is disclosed that prevents charging and discharging that do not contribute to light emission, thereby reducing power consumption. The organic EL display device comprises a plurality of first electrode elements, a plurality of second electrode elements crossing the first electrode elements, and organic light emitting layers sandwiched by the first electrode elements and the second electrode elements. A first driving unit passes light emitting current through the first electrode elements. A second driving unit connects the second electrode elements to the ground to pass the light emitting current and to a second power supply not to pass the light emitting current. The voltage of the second power supply is varied in synchronism with the voltage waveform of output of the light emitting current from the first driving unit.

Abstract: An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed between trench gates, a sub well region is provided, which is connected to an emitter electrode through diodes. When the IGBT is in a turned-on state, the diodes are brought into a non-conduction state to isolate the sub well region from the emitter electrode, by which carriers are accumulated. When the IGBT is in a turned-off state, the diodes are brought into a conduction state to electrically connect the sub well region to the emitter electrode, by which carriers are discharged at a high speed. In an early stage of turning-on of the IGBT, capacitance of a portion of the gate facing the sub well region is converted to gate-emitter capacitance to thereby reduce gate-collector capacitance, by which electromagnetic noise at switching is reduced.

Abstract: A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially accompanies a conventional reverse blocking IGBT, and that retains satisfactorily low on-state voltage is disclosed. The device includes a MOS gate structure formed on a n? drift layer, the MOS gate structure including a p+ base layer formed in a front surface region of the drift layer, an n+ emitter region formed in a surface region of the base layer, a gate insulation film covering a surface area of the base layer between the emitter region and the drift layer, and a gate electrode formed on the gate insulation film. An emitter electrode is in contact with both the emitter region and the base layer of the MOS gate structure.

Abstract: A current detecting device and method that detects a variation in a current being supplied to a load in supplying variable DC power to the load via an inductor from a synchronous rectification DC-DC converter in which a high-side switch is connected to one electrode of a DC input voltage source and a low-side switch connected to the other electrode. The switches are turned on and off alternately during a prescribed switching period. A low-pass filter is connected to a signal line that leads from a connecting point of the inductor and the switches. An operation circuit detects an output current of the DC-DC converter by performing an operation on the difference between an output voltage of the low-pass filter and an output voltage of the DC-DC converter.

Abstract: An organic EL device is disclosed that has a buffer layer that prevents degradation of a reflection electrode and an electron injection layer due to chemical reaction between the material of the reflection electrode and the material of the electron injection layer when the two materials are in contact with each other. The buffer layer also prevents movement of the material of the reflection electrode into an organic EL layer. The buffer layer further allows reduction of a driving voltage of the organic EL device. An organic EL device of the invention includes a transparent electrode, an organic EL layer including at least an organic light emitting layer and an electron injection layer, a buffer layer, and a reflection electrode laminated on a substrate in this order. The electron injection layer is in contact with the buffer layer and doped with an alkali metal or an alkaline earth metal.

Abstract: An insulating substrate includes a metal base as a base member, an insulating layer which is a room temperature, aerosol deposited shock solidification film formed on the metal base, and a circuit pattern which is a cold sprayed thermal spray coating formed on the insulating layer. A semiconductor device incorporates the insulating substrate, and thereby has improved heat radiation characteristics.

Abstract: A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially accompanies a conventional reverse blocking IGBT, and that retains satisfactorily low on-state voltage is disclosed. The device includes a MOS gate structure formed on a n? drift layer, the MOS gate structure including a p+ base layer formed in a front surface region of the drift layer, an n+ emitter region formed in a surface region of the base layer, a gate insulation film covering a surface area of the base layer between the emitter region and the drift layer, and a gate electrode formed on the gate insulation film. An emitter electrode is in contact with both the emitter region and the base layer of the MOS gate structure.

Abstract: The present invention provides a switching element in which an organic bistable material is disposed between two electrodes, this element having a high ratio of ON current to OFF current, a high threshold voltage, and a small spread. A switching element in which an organic bistable material layer comprising an organic bistable material having two stable values of resistance with respect to the applied voltage is disposed between at least two electrodes, wherein an organic material layer is provided between the organic bistable material layer and at least one of the electrodes. Electrically conductive fine particles are preferably dispersed in the organic materials layer.

Abstract: The semiconductor apparatus is disclosed that includes a partial SOI substrate including an oxide film; a lateral first MOSFET section having a planar gate structure and formed in the portion of the partial SOI substrate where there is an oxide film; a vertical second MOSFET section having a trench gate structure and formed in the portion of the partial SOI substrate where there is no oxide film, the second MOSFET section being adjacent to the first MOSFET section. The first MOSFET section includes a first p-type base region on the oxide film. The second MOSFET section includes a second n+-type drain region, a second n-type drift region on the second n+-type drain region, and a second p-type base region in the surface portion of the second n-type drift region.

Abstract: An organic EL device is disclosed that prevents degradation due to moisture and oxygen and that avoids the generation of dark spots even when a substrate covered with polymer or made of a resin is used. The organic EL device includes a substrate, a transparent electrode consisting of a plurality of electrode elements formed on the substrate, an organic EL layer formed on the transparent electrode, and a reflection electrode formed on the organic EL layer. The transparent electrode includes first and second transparent electrode elements. Each of the first transparent electrode elements is arranged alternately with each of the second transparent electrode elements. A side edge portion of each of the first transparent electrode elements overlaps a side edge portion of next second transparent electrode element through an insulation layer. The first transparent electrode elements are electrically insulated from the second transparent electrode elements.

Abstract: An organic EL device is disclosed which has a buffer structure that mitigates sputtering damage inflicted in the process of forming a transparent top electrode, that exhibits sufficient electrical conductivity and light transmissivity, and that exhibits high electron injection efficiency. An organic EL device according to the invention includes, sequentially disposed on a substrate, a bottom electrode, an organic EL layer including at least an organic light emissive layer, a buffer structure, and a transparent top electrode through which light is emitted. The buffer structure is a multilayer structure having two or more first type buffer layers containing a transparent material and two or more second type buffer layers containing a metal or an alloy, with each of the second type buffer layers being disposed on one of the first type buffer layers. A method for manufacturing such an organic EL device also is disclosed.

Abstract: A fabrication method of a semiconductor wafer can fill trenches formed in a semiconductor substrate with an epitaxial film with high crystal quality without leaving cavities in the trenches. The trenches are formed in the first conductivity type semiconductor substrate. Planes exposed inside the trenches are made clean surfaces by placing the substrate in a gas furnace, followed by supplying the furnace with an etching gas and carrier gas, and by performing etching on the exposed planes inside the trenches by a thickness from about a few nanometers to one micrometer. The trenches have a geometry opening upward through the etching. Following the etching, a second conductivity type semiconductor is epitaxially grown in the trenches by supplying the furnace with a growth gas, etching gas, doping gas and carrier gas, thereby filling the trenches. Instead of making the trenches slightly-opened upward, their sidewalls may be made planes enabling facet formation.

Abstract: A semiconductor device has a MOS gate side surface structure, including a gate electrode filling a trench formed in a semiconductor substrate with an insulator film between the trench and the gate electrode, a gate insulator film covering the surface of the gate electrode, a buffer region of one conductivity type in contact with the semiconductor substrate, a base region of the other conductivity type adjacent to the buffer region on the gate insulator film, and an emitter region of the one conductivity type adjacent to the base region on the side opposite to the buffer region. The semiconductor device and the method of manufacturing thereof can further improve the tradeoff between the on-voltage and the turn-off loss by increasing the amount of electrons injected from a cathode on the surface to increase an amount of carriers on the cathode side in a stable turned-on state of the device.

Abstract: An uninterruptible power supply system prevents an output voltage from dropping due to an operation delay of a relay for isolating an alternating-current power source side and avoids an unexpected current flowing between the alternating-current power source side and the uninterruptible power supply system side. When short circuit occurs, a parallel converter connected in parallel to input terminals connected to an alternating-current power source is made to operate so that the output voltage thereof becomes “0” or the input voltage Vin and a series inverter connected in series between an input relay and one of output terminals is made to carry out a compensating operation with a smoothing capacitor taken as a power source so that a value of an applied voltage to the output terminals becomes an output voltage command value Vout*.

Abstract: The present invention provides a switching element in which the compositional deviation of material is suppressed and that attains uniform bistability performance and is suitable for mass production. In a switching element comprising an organic bistable material, which exhibits two stable states in resistance under applied voltage, arranged between at least two electrodes, the organic bistable material comprises at least a compound having an electron-donating functional group and an electron-accepting functional group in each molecule. It is preferred that, for example, an aminoimidazole type compound, a pyridone type compound, a stilbene type compound or a butadiene type compound be used as the above compound.

Abstract: A color conversion filter substrate is disclosed that has satisfactory durability and that allows the light after color conversion to be extracted with high efficiency and prevents the decay of intensity of fluorescent light accompanied by light illumination by suppressing, with high probability, the reaction between the dye in an excited state and the matrix. A color conversion filter substrate of the invention includes a transparent support substrate, at least two types of color filters, and at least one type of color conversion filter. The color conversion filter includes a dye dispersed in a matrix, the dye absorbing light with a wavelength and emitting light containing a wavelength different from the absorbed wavelength. The color conversion filter has a refractive index in a range of 1.30 to 1.48. The matrix of the color conversion filter contains a straight type silicone polymer or a resin-modified type silicone polymer.

Abstract: A semiconductor device and method of manufacturing the same includes an n?-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered with a gate oxide film whose surface is covered with a cathode film doped in an n-type with an impurity concentration higher than that of the substrate as an n?-drift layer. In the cathode film, a section in contact with the substrate becomes an n+-buffer region with a high impurity concentration, next to which a p-base region is formed. Next to the p-base region, an n+-source region is formed. On the cathode film, an interlayer insulator film is selectively formed on which an emitter electrode is formed. A semiconductor device such as an IGBT is obtained with a high rate of acceptable products, an excellent on-voltage to turn-off loss tradeoff and an excellent on-voltage to breakdown voltage tradeoff.

Abstract: A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer.

Abstract: A bidirectional main switch includes two main switches M1 and M2 formed of two main MOSFET'S Q1 and Q2, respectively; a bidirectional mirror switch including two mirror switches M3 and M4 formed of two mirror MOSFET'S Q3 and Q4, respectively, both being formed so as to allow a small current (a mirror current) to flow therein in a specified ratio to a current in the main MOSFET'S Q1 and Q2; and an operational amplifier Op1 forming feed back amplifying circuit having power supplied from two power sources. Thus, a bidirectional current flowing in the bidirectional main switch for cutting off an excessive charge current and an excessive discharge current of a battery E can be detected by a simple circuit with low power losses and a high accuracy.

Abstract: An organic EL display is displayed. The display is manufactured sealing and joining an organic light emitter constituted from thin film transistors, anodes, a light-emitting layer, a cathode and a protective layer which are laminated on a substrate, together with a laminated body of color filters and a black mask formed on a transparent substrate. The organic EL light-emitting layer is aligned with the color filters during the process of sealing the substrate and the transparent substrate using an outer periphery sealing layer and an internal sealing layer. The outer periphery sealing layer provides precise alignment between the organic EL light-emitting layer and the color filters and rapid fixing between them can be carried out, and prevents infiltration of moisture from the outside environment. The internal sealing layer prevents reflection of light from the organic EL light-emitting layer, and hence the light can be transmitted to the color filters effectively.