Patents Assigned to Genesis
-
Patent number: 10580934Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.Type: GrantFiled: November 19, 2018Date of Patent: March 3, 2020Assignee: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Yan-Ting Lan, Jing-En Huang, Yi-Ru Huang
-
Patent number: 10573627Abstract: Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.Type: GrantFiled: August 7, 2018Date of Patent: February 25, 2020Assignee: Silicon Genesis CorporationInventors: Theodore E. Fong, Michael I. Current
-
Patent number: 10573779Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.Type: GrantFiled: December 24, 2018Date of Patent: February 25, 2020Assignee: Genesis Photonics Inc.Inventors: Shao-Ying Ting, Kuan-Chieh Huang, Jing-En Huang, Yi-Ru Huang, Sie-Jhan Wu, Long-Lin Ke
-
Patent number: 10563176Abstract: An in vitro human cardiac multi potent or unipotent cell that has the ability to proliferate; may be maintained in standard cardiac stem cell media; can differentiate to a progenitor, precursor, or somatic cell; has the characteristics of a cardiac stem cell, a cardiac precursor cell, or a cardiac progenitor cell; does not exhibit uncontrolled growth, teratoma formation, or tumor formation in vivo; expresses one or more markers of a multipotent, unipotent or somatic cell not characteristic of a cardiac stem cell, a cardiac precursor cell, or a cardiac progenitor cell; and is derived from the reprogramming of a somatic cell, a progenitor cell or a stem cell that exhibits at least a transient increase in intracellular levels of at least one reprogramming agent; wherein the cell comprises at least one transiently expressed polypeptide or an expression vector.Type: GrantFiled: September 26, 2016Date of Patent: February 18, 2020Assignee: Genesis Technologies LimitedInventors: Jan-Eric Ahlfors, Rouwayda El-Ayoubi
-
Publication number: 20200052159Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: October 21, 2019Publication date: February 13, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
-
Patent number: 10557123Abstract: A method of obtaining a neural multipotent, unipotent or somatic cell, including: i) providing a cell of a first type which is not a neural multipotent, unipotent or somatic cell; ii) increasing expression of at least one neural multipotent or unipotent gene regulator in the cell of a first type, to a level at which the at least one neural multipotent or unipotent gene regulator is capable of driving transformation of the cell of a first type into the neural multipotent, unipotent or somatic cell, wherein the at least one multipotent or unipotent gene regulator is Musashi1 (Msi1), Neurogenin 2 (Ngn2), or both Msi1 and Ngn2; and iii) placing or maintaining the cell in a neural cell culture medium and maintaining sufficient intracellular levels of the at least one multipotent or unipotent gene regulator for a sufficient period of time to allow a stable neural multipotent, unipotent or somatic cell to be obtained.Type: GrantFiled: November 19, 2018Date of Patent: February 11, 2020Assignee: Genesis Technologies LimitedInventors: Jan-Eric Ahlfors, Rouwayda El-Ayoubi
-
Publication number: 20200035875Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.Type: ApplicationFiled: October 7, 2019Publication date: January 30, 2020Applicant: Genesis Photonics Inc.Inventors: Cheng-Wei Hung, Long-Chi Tu, Jui-Fu Chang, Chun-Ming Tseng, Yun-Chu Chen
-
Publication number: 20200024568Abstract: The present invention provides automated devices for use in supporting various cell therapies and tissue engineering methods. The present invention provides an automated cell separation apparatus capable of separating cells from a tissue sample for use in cell therapies and/or tissue engineering. The cell separation apparatus can be used in combination with complementary devices such as cell collection device and/or a sodding apparatus to support various therapies. The automated apparatus includes media and tissue dissociating chemical reservoirs, filters, a cell separator and a perfusion flow loop through a graft chamber which supports a graft substrate or other endovascular device. The present invention further provides methods for using the tissue grafts and cell samples prepared by the devices described herein in a multitude of therapies including revascularization, regeneration and reconstruction of tissues and organs, as well as treatment and prevention of diseases.Type: ApplicationFiled: September 28, 2015Publication date: January 23, 2020Applicant: Tissue Genesis, Inc.Inventors: Gregory D. Ariff, Thomas Cannon, Jennifer L. Case, Christian L. Haller, Paul Kosnik, Charles P. Luddy, Craig A. Mauch, Erik Vossman, Stuart K. Williams
-
Patent number: 10486159Abstract: The various embodiments disclosed and pictured illustrate a multi-connector hammer for comminuting various materials. The illustrative embodiments pictured and described herein are primarily for use with a rotatable hammermill assembly. The multi-connector hammer includes a connection portion having a rod hole therein, a contact portion for delivery of energy to the material to be comminuted, and a multi-connector neck portion affixing the connection portion to the contact portion. In other embodiments, a shoulder is positioned around the periphery of the rod hole for added strength. In still other embodiments, a neck reinforcement is positioned along a portion of the neck for increased strength. A weld or plurality of welds may be affixed to various surfaces of the contact portion to aide in comminuting and/or longevity of the multi-connector hammer.Type: GrantFiled: May 3, 2016Date of Patent: November 26, 2019Assignee: Genesis III, Inc.Inventor: Roger Young
-
Patent number: 10480671Abstract: A control element having a beam member divided into an actuation section and a valve section positioned on opposing sides of a pivot member, in which active control of the actuation section causes buckling of the valve section to bring the valve section from a closed state to an open state or causes relaxing of the valve section to bring the valve section from an open state to a closed state.Type: GrantFiled: November 24, 2015Date of Patent: November 19, 2019Assignee: Genesis Advanced Technology Inc.Inventor: James Brent Klassen
-
Patent number: 10471337Abstract: The invention generally pertains to a modular gaming table having a quick-change insert for use with a plurality of sensors associated with the gaming table. By way of example, the modular gaming table has table top with a recessed section cut into the top surface. Several light sensors are positioned within the recessed section. A removable insert is provided having a gaming table layout covering the top surface. The removable insert is sized to fit within the table top recessed section and cover the plurality of light sensors. The light sensors are configured to detect a playing card or gaming chip on the top surface of the removable insert through the gaming table layout. The removable insert is a quick-change insert meaning it is configured to be removed from the table top recessed section to replace the gaming table layout without disturbing the position of the light sensors.Type: GrantFiled: August 13, 2018Date of Patent: November 12, 2019Assignee: Genesis Gaming Solutions, Inc.Inventors: Randy L. Knust, Eric Schoppe
-
Patent number: 10468549Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.Type: GrantFiled: September 19, 2017Date of Patent: November 5, 2019Assignee: Genesis Photonics Inc.Inventors: Hsin-Chiao Fang, Cheng-Hsueh Lu, Cheng-Hung Lin, Chi-Hao Cheng, Chi-Feng Huang
-
Patent number: 10453999Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: GrantFiled: May 16, 2018Date of Patent: October 22, 2019Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
-
Patent number: 10445834Abstract: An apparatus including: a processor configured to obtain asset return data for assets in a portfolio; populate initial estimated portfolio covariance matrix; compute initial portfolio weights for the assets; obtain respective amount of the assets according to the weights; populate an updateable matrix decomposition using the estimated portfolio covariance matrix and a scaling factor limiting respective degrees of negativity for the weights; obtain an update to the asset return data; update the updateable matrix decomposition according to the update; modify the weights using the updated matrix decomposition; and modify the assets in the portfolio according to the modified respective weights by purchasing or selling an additional quantity of an asset included in the portfolio to increase an amount of the asset included in the portfolio or selling a portion an asset included in the portfolio to decrease an amount of the asset included in the portfolio.Type: GrantFiled: August 27, 2014Date of Patent: October 15, 2019Assignee: Genesis Financial Development, Inc.Inventor: Richard C. Payne
-
Publication number: 20190312176Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.Type: ApplicationFiled: June 17, 2019Publication date: October 10, 2019Applicant: Genesis Photonics Inc.Inventors: Tsung-Syun Huang, Jing-En Huang, Yu-Chen Kuo, Yan-Ting Lan, Kai-Shun Kang, Fei-Lung Lu, Teng-Hsien Lai, Yi-Ru Huang
-
Patent number: 10439111Abstract: A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. The light-emitting unit includes two electrode pads, and the two electrode pads are located on the lower surface. The wavelength conversion adhesive layer is disposed on the upper surface. The wavelength conversion adhesive layer includes a low-concentration fluorescent layer and a high-concentration fluorescent layer. The high-concentration fluorescent layer is located between the low-concentration fluorescent layer and the light-emitting unit. The width of the high-concentration fluorescent layer is WH. The width of the low-concentration fluorescent layer is WL. The width of the light-emitting unit is WE. The light-emitting device further satisfies the following inequalities: WE<WL, WH<WL and 0.8<WH/WE?1.2.Type: GrantFiled: October 19, 2017Date of Patent: October 8, 2019Assignee: Genesis Photonics Inc.Inventors: Cheng-Wei Hung, Long-Chi Tu, Jui-Fu Chang, Chun-Ming Tseng, Yun-Chu Chen
-
Publication number: 20190288580Abstract: An electric machine has a stator having an array of electromagnetic elements. A rotor is mounted on bearings and has an array of rotor posts. The rotor posts each have a length defining opposed ends and the array of rotor posts extends along the rotor in a direction perpendicular to the length of each of the rotor posts. The rotor has electromagnetic elements defining magnetic poles placed between the plurality of rotor posts. An airgap is formed between the rotor and the stator when they are in an operational position. A plurality of rotor flux restrictors are formed on the rotor, and each lies adjacent to one of the opposed ends of the rotor posts.Type: ApplicationFiled: July 14, 2017Publication date: September 19, 2019Applicant: Genesis Robotics and Motion Technologies Canada, ULCInventor: James Brent KLASSEN
-
Patent number: 10396255Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.Type: GrantFiled: November 27, 2017Date of Patent: August 27, 2019Assignee: Genesis Photonics Inc.Inventors: Kuan-Chieh Huang, Shao-Ying Ting, Jing-En Huang, Yi-Ru Huang
-
Patent number: 10388103Abstract: In one embodiment, a method includes, at a central data center including at least one server computer, maintaining central hospitality data for a plurality of hospitality systems. The method further includes serving, by the central data center, at least a portion of the central hospitality data to a plurality of computing devices operated by hospitality consumers. The method also includes, at the central data center, receiving, at regular intervals, an automated email from each hospitality system of the plurality of hospitality systems. Each automated email encapsulates updated local hospitality data gathered by the hospitality system. In addition, the method includes, at the central data center, retrieving the updated local hospitality data from each automated email. Also, the method includes, at the central data center, updating the central hospitality data per the updated local hospitality data.Type: GrantFiled: September 24, 2012Date of Patent: August 20, 2019Assignee: Genesis Gaming Solutions, Inc.Inventors: Randy L. Knust, Eric Schoppe
-
Patent number: 10381511Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm ?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.Type: GrantFiled: October 2, 2017Date of Patent: August 13, 2019Assignee: Genesis Photonics Inc.Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li