Abstract: The invention discloses a data transfer protection apparatus for a flash memory controller, placed between Bose-Chaudhuri-Hocquenghem (BCH) and NAND Flash Chip. In encode path the hardware module selects a sequence of constant values, exclusive-or the original parity with that constant value. In decode path the hardware module detects the parity period, exclusive-or the parity which is read out from NAND Flash Chip with the same constant value sequence.

Abstract: A device for storing pulse latch with logic circuit and thus having signal maintaining function is provided, wherein the device is composed of a data signal, a scan data input signal, a stored signal, a choosing data input signal, a time clock signal, a restoring signal, a first signal channel, a scan latch, a second signal channel, a pulse latch, a normal output signal, an output signal, a first OR gate, a second OR gate, a third OR gate, a AND gate and an inverter connecting to one another. The device may store the data when being switch off and restore the data when being switch on again.

Abstract: A method and a device for multi-channel data alignment in a transmission system are provided, wherein the method comprises receiving a first stream data and a second stream data, determining a deleting/inserting state of the first stream data and the second stream data to generate an information of mismatch data due to a speed difference situation, generating a reverse inserting control signal or a reverse deleting control signal to completely restore the original first stream data and/or the original second stream data at a transmission end, deleting/inserting the first stream data and the second stream data simultaneously after receiving the deleting/inserting state of the first stream data and the second stream data, and outputting the corrected first stream data and the corrected second stream data without mismatching.

Abstract: Electronic test system and associated method, including a first and a second connection terminals respectively coupled to two pins of a chip under test, a signal source terminal coupled to a signal generator, a first and a second measurement terminals coupled to a tester, a fifth switch, a seventh switch and a switch circuit which has a first and a fourth front terminals coupled to the signal source terminal, has a first and a fourth back terminals coupled to the first and second connection terminals, and controls conduction between the first front terminal and the first back terminal, as well as conduction between the fourth front terminal and the fourth back terminal. The fifth switch is coupled between the fourth back terminal and the first measurement terminal, and the seventh switch is coupled between the first connection terminal and the second measurement terminal.

Abstract: A physical coding sublayer includes a first channel configured to receive a first encoded data stream from a physical media attachment layer and to provide a first decoded data stream to a media access layer. The first channel includes a first circuit configured to detect synchronization headers in the first encoded data stream received from the physical media attachment layer, a decoding circuit configured to decode the encoded data stream and to adjust a width of the received data from a first width to a second width based on a signal identifying the synchronization headers received from the first circuit, and a first single configured to compensate for clock differences between the physical media attachment layer and the media access layer to which the first buffer provides the first decoded data stream.

Abstract: A programmable current mirror a reference transistor, first and second mirror transistors, and a first current bypass. The reference transistor has a source and a gate coupled to a reference current node. The first and second mirror transistors are coupled together in series at a first node. Each of the first and second mirror transistors having gates coupled to each other and to the gate of the reference transistor. The first current bypass including a switch disposed in parallel with the second mirror transistor. The first current bypass is coupled to a source and a drain of the second mirror transistor and to the first node.

Abstract: An oscillation circuit and associated method, wherein the oscillation circuit provides a pair of oscillation signals at two oscillation nodes, and includes a first capacitor, a switch circuit and a second capacitor serially coupled between the two oscillation nodes; the switch circuit conducts between the first capacitor and the second capacitor on an enable voltage higher than a power voltage of the oscillation circuit.

Abstract: An oscillation circuit and associated method, wherein the oscillation circuit provides a pair of oscillation signals at two oscillation nodes, and includes a first capacitor, a switch circuit and a second capacitor serially coupled between the two oscillation nodes; the switch circuit conducts between the first capacitor and the second capacitor on an enable voltage higher than a power voltage of the oscillation circuit.

Abstract: The invention provides a semiconductor device and associated method, which includes a substrate, a first die, multiple sub-package systems surrounding the first die, and a heat spreader. The first die and the sub-package systems are installed on a same surface of the substrate, wherein projections of the first die and each sub-package system on the surface partially overlap, and have a portion not overlapping. Each of the sub-package systems includes an interposer and multiple second dice installed on the interposer by way of flip-chip. The heat spreader includes a protrusion portion and a dissipation plate; the dissipation plate covers the first die and the sub-package systems, and the protrusion portion is set between the dissipation plate and the first die.

Abstract: An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.

Abstract: The present invention provide a heat dissipation structure on the active surface of the die to increase the performance of the heat conduction in longitude direction of the semiconductor package device, so that the heat dissipating performance can be improved when the semiconductor package device is associated with the exterior heat dissipation mechanism.

Abstract: The present invention provides a method for packaging semiconductor device which is using more than once reflow processes to heat the solder ball to prevent the deformation of solder ball, so that the yield of the manufacturing process can be increased and the reliability of the semiconductor device can be increased.

Abstract: A two-stage post driver circuit includes a controlling circuit, a pull-up unit and a pull-down unit. A first N-type transistor of the pull-down unit and a first P-type transistor of the pull-up unit are both connected to an output pad. The controlling circuit is used for controlling the first N-type transistor and the first P-type transistor. Consequently, when the pull-up unit or the pull-down unit is turned on, the voltage difference between the drain terminal and the source terminal of the first N-type transistor or the first P-type transistor is lower than a voltage stress.

Abstract: A receiver circuit is provided which receives an external signal of high voltage and provides a corresponding internal signal of low voltage. The receiver circuit includes a voltage limiter, a level down shifter and an inverter of low operation voltage. The level down shifter has a front node and a back node, and includes a transistor with a gate and a source respectively coupled to the voltage limiter and the inverter at the front node and the back node. The voltage limiter limits level of the external signal transmitted to the front node, the level down shifter shifts down a signal of the front node by a cross voltage to generate a signal of the back node, and the inverter inverts the signal of the back node to generate the internal signal.

Abstract: A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.

Abstract: The invention discloses a power gating for in-rush current mitigation. Firstly the circuit uses small power switch cells at first stage, such that those power switch cells run in saturation region. Secondly a delay unit delays a switch signal to control the dwell time of current to reduce the peak value of the current. Thirdly large power switch cells are used at the rest, such that those power switch cells operate in linear region.

Abstract: ESD protection circuit is provided, which includes a detection circuit, a trigger circuit and a clamp circuit. The detection circuit includes two stacked capacitors reflecting occurrence of ESD events. The trigger circuit includes three stacked transistors controlling triggering of the clamp circuit according to operation of the detection circuit. The clamp circuit includes two stacked transistors conducting ESD path when triggered.

Abstract: A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.

Abstract: A tunable delay cell (TDC) is disclosed, the TDC is applied to power gating circuit design, and the TDC is connected with control unit. The TDC comprises multiplexer, delay unit, clock signal input line, control signal line, power source terminal and combinational circuit. The signal provided by the control signal line can control the clock signal provided by the clock signal input line whether to be delayed a predetermined time by the delay unit or not. The control unit controls the combinational circuit to be turned off to make the TDC stop working.

Abstract: The invention discloses a method of adaptive motion estimation in search windows for video coding, which uses adjacent MBs to predict the range of search window, storing MVs of adjacent MBs respectively for each reference frame, then using MVs of three adjacent MBs to delimit the scope of search window on the same reference frame. It could derive the most similar MB from the scope of search window than the current MB.