Abstract: A device for storing pulse latch with logic circuit and thus having signal maintaining function is provided, wherein the device is composed of a data signal, a scan data input signal, a stored signal, a choosing data input signal, a time clock signal, a restoring signal, a first signal channel, a scan latch, a second signal channel, a pulse latch, a normal output signal, an output signal, a first OR gate, a second OR gate, a third OR gate, a AND gate and an inverter connecting to one another. The device may store the data when being switch off and restore the data when being switch on again.

Abstract: A burn-in socket for carrying an electronic device to let the electronic device electrically connect to a circuit board via the burn-in socket is provided. The electronic device has a body and at least a lead. The burn-in socket comprises a frame and a carrier, the frame has an opening and a plurality of first aligning portions, wherein the opening fits onto the contour of the body, and the first aligning portions surrounds the opening. The carrier has a plurality of second aligning portions. The frame is assembled to the carrier with the conjunction of the first aligning portions and the second aligning portions. The body is capable of fitting into the opening to let the lead electrically connect to the circuit board via the carrier.

Abstract: This invention provides a clock and data recovery system, which comprises a plurality of gm cells, control device, resistor and capacitor. The gm cells respectively have an input end and an output end. The control devices are connected to these output ends. According to a time value, the control device controls a part of the plurality of gm cells to form a first gm cell, and the control device controls another part of the plurality of gm cells to form a second gm cell. The resistor is connected between the first gm cell and the second gm cell. The capacitor is connected to the second gm cell. Wherein, the control device controls the ratio of the first gm cell and the second gm cell in accordance with a time-division multiplexed manner.

Abstract: The present invention provides a method for packaging semiconductor device which is using more than once reflow processes to heat the solder ball to prevent the deformation of solder ball, so that the yield of the manufacturing process can be increased and the reliability of the semiconductor device can be increased.

Abstract: The present invention provides a semiconductor package structure, which includes a substrate having a top surface and a back surface, a plurality of first connecting points on the top surface and a plurality of second connecting points on the back surface; a chip having an active surface and back surface, a plurality of pads on the active surface, and the chip is attached on the top surface of the substrate; a plurality of wires is electrically connected the plurality of pads on the active surface of the chip with the plurality of first connecting points on the top surface of substrate; a first encapsulant is filled to cover portion of the plurality of wires, the chip, and the portion of top surface of the substrate; a second encapsulate is filled to cover the first encapsulant, the plurality of wires and is formed on portion of the top surface of the substrate, in which the Yang's module of the second encapsulant is different with that of the first encapsulant; and a plurality of connecting components is dis

Abstract: The invention creates a slicing level and sampling phase adaptation circuitry for data recovery systems. The invention explores the boundary of the eye opening to decide the optimal slicing level and sampling phase with a simple bit error rate estimation technique. Bit error rate estimation is achieved with several collaborating samplers.

Abstract: A method and a device for multi-channel data alignment in a transmission system are provided, wherein the method comprises receiving a first stream data and a second stream data, determining a deleting/inserting state of the first stream data and the second stream data to generate an information of mismatch data due to a speed difference situation, generating a reverse inserting control signal or a reverse deleting control signal to completely restore the original first stream data and/or the original second stream data at a transmission end, deleting/inserting the first stream data and the second stream data simultaneously after receiving the deleting/inserting state of the first stream data and the second stream data, and outputting the corrected first stream data and the corrected second stream data without mismatching.

Abstract: A through-silicon via (TSV) testing structure is disclosed herein and includes a plurality of controllers, a plurality of transmitters and a plurality of receivers. The controllers are configured to output a first controlling signal and a second controlling signal. The transmitters are respectively connected to the output end of the through-silicon via and one of the controllers, and output a testing output signal in accordance with the first controlling signal and the second controlling signal. The receivers are respectively connected to the input end of the through-silicon via and another one of the controllers, and input a testing input signal in accordance with the first controlling signal and the second controlling signal.

Abstract: The invention discloses a data transfer protection apparatus for a flash memory controller, placed between BCH and NAND Flash Chip. In encode path the hardware module selects a sequence of constant values, exclusive-or the original parity with that constant value. In decode path the hardware module detects the parity period, exclusive-or the parity which is read out from NAND Flash Chip with the same constant value sequence.

Abstract: A system and method for multi-protocol bus communications between integrated circuits is provided. An electronic system comprises an integrated circuit having an on-chip bus. The integrated circuit includes a master component and a first slave component, both coupled to the on-chip bus and communicate using a first on-chip bus protocol, a slave bus converter coupled to the on-chip bus, and a switch coupled to the slave bus converter and to the on-chip bus. The electronic system further comprising a second slave component coupled to the integrated circuit. The slave bus converter converts bus communications in the first on-chip bus protocol to a second on-chip bus protocol and the switch selectively couples the on-chip bus or the slave bus converter to the second slave component based on a bus select control signal.

Abstract: A test pattern generation and comparison circuit creates test pattern stimulus signals for and evaluates response signals from logic or memory such as random access memory (RAM). It utilizes both parallel and serial interfaces to the logic/memory under test. The test pattern generation and comparison circuit further provides a method for testing logic and memory utilizing built-in self test (BIST) techniques. The method uses a programmable logic/memory commands which are translated into physical logic signals and timings for the logic or memory under test. The results of the test pattern generated and applied to the logic or memory are compared to expected results. The result of the comparison is a pass/fail designation. In addition, the comparison of the expected test results with the actual test results provides information on the exact location of the failure.

Abstract: In the present invention a built in self test (BIST) for an embedded memory is described. The BIST can be used at higher levels of assembly and for commodity memories to perform functional and AC memory tests. A BIST controller comprising a finite state machine is used to step through a test sequence and control a sequence controller. The sequence controller provides data and timing sequences to the embedded memory to provide page mode and non-page mode tests along with a refresh test. The BIST logic is scan tested prior to performing the built in self test and accommodations for normal memory refresh is made throughout the testing. The BIST also accommodates a burn-in test where unique burn-in test sequences can be applied.

Abstract: In the present invention a bit line precharge circuit is used to prevent errors from a write operation in memory cells adjacent to the column being written. The precharge circuits are enabled by write enable and selected by the Y decoder in such a way that only precharge circuits on bit lines adjacent to the active bit lines in a write operation are activated. All other precharge circuits on bit lines more remote than immediately adjacent bit lines are not activated and thus saving power during a write operation.