Patents Assigned to GLOBALFOUNDRIES Inc.
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Patent number: 10872809Abstract: One illustrative transistor device disclosed herein includes a gate structure positioned above at least an active region, wherein the gate structure has an axial length in a direction corresponding to a gate width direction of the transistor device. In this example, a first portion of the axial length of the gate structure has a first upper surface and a second portion of the axial length of the gate structure has a second upper surface, wherein the first upper surface is positioned at a level that is above a level of the second upper surface. The device also includes a gate contact structure that contacts the first upper surface of the gate structure.Type: GrantFiled: September 23, 2019Date of Patent: December 22, 2020Assignee: GLOBALFOUNDRIES Inc.Inventors: Ruilong Xie, Lars W. Liebmann, Balasubramanian Pranatharthi Haran, Veeraraghavan Basker
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Patent number: 10872979Abstract: An integrated circuit product is disclosed that includes a transistor device that includes a final gate structure, a gate cap, a low-k sidewall spacer positioned on and in contact with opposing sidewalls of the final gate structure, first and second contact etch stop layers (CESLs) located on opposite sides of the final gate structure, whereby the CESLs are positioned on and in contact with the low-k sidewall spacer, and a high-k spacer located on opposite sides of the final gate structure, wherein the high-k spacer is positioned in recesses formed in an upper portion of the CESLs.Type: GrantFiled: January 30, 2020Date of Patent: December 22, 2020Assignee: GLOBALFOUNDRIES Inc.Inventors: Hui Zang, Chung Foong Tan, Guowei Xu, Haiting Wang, Yue Zhong, Ruilong Xie, Tek Po Rinus Lee, Scott Beasor
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Patent number: 10867912Abstract: Structures that include a passive device, such as a metal-based resistor, and methods of forming a structure that includes a passive device. The structure includes a semiconductor substrate, an interconnect structure including a passive device, and a dummy fill region arranged between the passive device and the semiconductor substrate. The dummy fill region includes a plurality of shallow trench isolation regions in the semiconductor substrate, a plurality of semiconductor fins, a plurality of source/drain regions in the plurality of semiconductor fins, and a plurality of contacts arranged over the plurality of shallow trench isolation regions.Type: GrantFiled: January 15, 2019Date of Patent: December 15, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Jaladhi Mehta, Brian Greene, Daniel J. Dechene, Ahmed Hassan
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Patent number: 10854510Abstract: Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.Type: GrantFiled: August 26, 2017Date of Patent: December 1, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Min Gyu Sung, Kwanyong Lim, Hiroaki Niimi
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Patent number: 10854515Abstract: Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.Type: GrantFiled: January 31, 2020Date of Patent: December 1, 2020Assignee: GLOBALFOUNDRIES, INC.Inventors: Vimal Kamineni, Ruilong Xie, Mark Raymond
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Patent number: 10854472Abstract: Aspects of the present invention relate to approaches for forming a semiconductor device such as a field-effect-transistor (FET) having a metal gate with improved performance. A metal gate is formed on a substrate in the semiconductor device. Further processing can result in unwanted oxidation in the metal that forms the metal gate. A reducing agent can be used to de-oxidize the metal that forms the metal gate, leaving a substantially non-oxidized surface.Type: GrantFiled: March 19, 2014Date of Patent: December 1, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Huang Liu, Wen-Pin Peng, Jean-Baptiste Laloe
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Patent number: 10846452Abstract: At least one method, apparatus and system disclosed involves a circuit layout for an integrated circuit device comprising a plurality of wider-than-default metal formations for a functional cell. A design for an integrated circuit device is received. The design comprises at least one functional cell. A first pair of wide metal formations are provided. The first pair of wide metal formations comprise a first metal formation and a second metal placed about a first cell boundary of the functional cell for providing additional space for routing, for high-drive routing, and/or for power routing.Type: GrantFiled: July 1, 2016Date of Patent: November 24, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Lei Yuan, Juhan Kim
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Patent number: 10840245Abstract: A semiconductor device comprising a substrate, a first fin and a second fin disposed on the substrate and an isolation material disposed on the substrate, wherein the isolation material separates the first fin and the second fin. A dielectric block is disposed between the first fin and the second fin, wherein the dielectric block is over the isolation material. A gate electrode covers the dielectric block.Type: GrantFiled: July 14, 2019Date of Patent: November 17, 2020Assignee: GLOBALFOUNDRIES Inc.Inventors: Shesh Mani Pandey, Jiehui Shu, Haiting Wang
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Patent number: 10840146Abstract: Structures and static random access memory bit cells including complementary field effect transistors and methods of forming such structures and bit cells. A buried cross-couple interconnect is arranged in a vertical direction beneath a first field-effect transistor and a second field-effect transistor. The buried cross-couple interconnect is coupled with a gate electrode of the first field-effect transistor, and the buried cross-couple interconnect is also coupled with a source/drain region of the second field-effect transistor.Type: GrantFiled: June 17, 2019Date of Patent: November 17, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Bipul C. Paul, Julien Frougier, Ruilong Xie
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Publication number: 20200357911Abstract: Disclosed are a gate-all-around field effect transistor (GAAFET) and method. The GAAFET includes stacked nanosheets having end portions adjacent to source/drain regions and a center portion between the end portions. The thickness of each nanosheet is tapered from a maximum thickness near the source/drain regions to a minimum thickness near and across the center portion. A gate wraps around each center portion. Inner spacers are aligned below the end portions between the gate and source/drain regions. The thickness of each inner spacer is tapered from a maximum thickness at the gate to a minimum thickness near the adjacent source/drain region. Each inner spacer includes a first spacer layer immediately adjacent to the gate, a second spacer layer immediately adjacent to the gate at least above the first spacer layer and further extending laterally beyond the first spacer layer toward or to the adjacent source/drain region, and, optionally, an air-gap.Type: ApplicationFiled: May 8, 2019Publication date: November 12, 2020Applicant: GLOBALFOUNDRIES INC.Inventors: Julien Frougier, Ruilong Xie, Kangguo Cheng, Chanro Park
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Patent number: 10832940Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.Type: GrantFiled: December 13, 2018Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Steven M. Shank, Anthony K. Stamper, Ian McCallum-Cook, Siva P. Adusumilli
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Patent number: 10833160Abstract: Structures for a field-effect transistor and methods of forming a field-effect transistor. A sidewall spacer is arranged adjacent to a sidewall of a gate electrode, a source/drain region is arranged laterally adjacent to the sidewall spacer, and a contact is arranged over the source/drain region and laterally adjacent to the sidewall spacer. The contact is coupled with the source/drain region. A section of an interlayer dielectric layer is laterally arranged between the contact and the sidewall spacer.Type: GrantFiled: April 17, 2019Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Michael Aquilino, Daniel Jaeger, Naved Siddiqui, Jessica Dechene, Daniel J. Dechene, Shreesh Narasimha, Natalia Borjemscaia
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Patent number: 10833072Abstract: Structures for a heterojunction bipolar transistor and methods of fabricating such structures. A hardmask is formed that includes an opening over a first portion of a substrate in a first device region and a shape over a second portion of the substrate in a second device region. An oxidized region in the first portion of the substrate while the shape blocks oxidation of the second portion of the substrate. The oxidized region is subsequently removed from the first portion of the substrate to define a recess. A first base and a first emitter of a first heterojunction bipolar transistor are formed over the first portion of the substrate in the first device region, and a second base and a second emitter of a second heterojunction bipolar transistor are formed in the recess over the second portion of the substrate in the second device region.Type: GrantFiled: May 6, 2019Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Siva P. Adusumilli, Anthony K. Stamper, Mark Levy, Vibhor Jain, John J. Ellis-Monaghan
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Patent number: 10833183Abstract: One device disclosed herein includes, among other things, first and second conductive features embedded in a first dielectric layer, a cap layer positioned above the first dielectric layer, a ballistic transport material contacting the first conductive member and positioned above a portion of the first dielectric layer, and first and second contacts contacting the first and second conductive features.Type: GrantFiled: November 1, 2018Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Joshua Dillon, Siva P. Adusumilli, Jagar Singh, Anthony Stamper, Laura Schutz
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Patent number: 10832965Abstract: Integrated circuit devices include trenches in a material layer that divide the material layer into fins. With such devices, an insulator partially fills the trenches and contacts the material layer. The top surface of the insulator (e.g., the surface opposite where the insulator contacts the material layer) has a convex dome shape between at least two of the fins. The dome shape has a first thickness from (from the bottom of the trench) where the insulator contacts the fins, and a second thickness that is greater than the first thickness where the insulator is between the fins. Further, there is a maximum thickness difference between the first and second thicknesses at the midpoint between the fins (e.g., the highest point of the dome shape is at the midpoint between the fins). Also, the top surface of the first insulator has concave divots where the first insulator contacts the fins.Type: GrantFiled: January 11, 2018Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Yiheng Xu, Haiting Wang, Qun Gao, Scott Beasor, Kyung Bum Koo, Ankur Arya
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Patent number: 10833018Abstract: A semiconductor device includes a substrate with first and second transistors disposed thereon and including sources, drains, and gates, wherein the first and second gates extend longitudinally as part of linear strips that are parallel to and spaced apart. The device further includes a first CB layer forming a local interconnect electrically connected to the first gate, a second CB layer forming a local interconnect electrically connected to the second gate, and a CA layer forming a local interconnect extending longitudinally between first and second ends of the CA layer. The first and second CB layers and the CA layer are disposed between a first metal layer and the substrate. The first metal layer is disposed above each source, drain, and gate of the transistors, The CA layer extends parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers.Type: GrantFiled: July 3, 2019Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Mahbub Rashed, Irene Y. Lin, Steven Soss, Jeff Kim, Chinh Nguyen, Marc Tarabbia, Scott Johnson, Subramani Kengeri, Suresh Venkatesan
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Patent number: 10833161Abstract: A semiconductor device includes: (i) a substrate; (ii) a first elongated semiconductor structure extending in a first horizontal direction along the substrate and protruding vertically above the substrate, wherein a first set of source/drain regions are formed on the first semiconductor structure; (iii) a second elongated semiconductor structure extending along the substrate in parallel to the first semiconductor structure and protruding vertically above the substrate, wherein a second set of source/drain regions are formed on the second semiconductor structure; and (iv) a first set of source/drain contacts formed on the first set of source/drain regions, wherein a first source/drain contact of the first set of source/drain contacts includes: (a) a vertically extending contact portion formed directly above a first source/drain region of the first set of source/drain regions, and (b) a via landing portion protruding horizontally from the vertically extending contact portion in a direction towards the second seType: GrantFiled: January 22, 2019Date of Patent: November 10, 2020Assignees: IMEC VZW, GLOBALFOUNDRIES INC.Inventors: Syed Muhammad Yasser Sherazi, Julien Ryckaert, Juergen Boemmels, Guillaume Bouche
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Patent number: 10833022Abstract: In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.Type: GrantFiled: October 16, 2019Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Cung D. Tran, Huaxiang Li, Bradley Morgenfeld, Xintuo Dai, Sanggil Bae, Rui Chen, Md Motasim Bellah, Dongyue Yang, Minghao Tang, Christian J. Ayala, Ravi Prakash Srivastava, Kripa Nidhan Chauhan, Pavan Kumar Chinthamanipeta Sripadarao
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Patent number: 10833012Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to transistor structures and methods of manufacture. The structure includes active metal lines separated by electrically floating metal layers which have a width less than a width of the active metal lines.Type: GrantFiled: September 30, 2019Date of Patent: November 10, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Chien-Hsin Lee, Haojun Zhang, Mahadeva Iyer Natarajan
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Patent number: 10833019Abstract: A method of making a semiconductor device includes forming a first source/drain trench and a second source/drain trench over a first and second source/drain region, respectively; forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench; forming a first source/drain contact over the first source/drain region, the first source/drain contact including a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and forming a second source/drain contact over the second source/drain region, the second source/drain contact including a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material; wherein the first tri-layer contact includes a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact includes a second metal oxide layer in contact with the second silicon dioxide layer.Type: GrantFiled: October 30, 2019Date of Patent: November 10, 2020Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES, INC.Inventors: Takashi Ando, Hiroaki Niimi, Tenko Yamashita