Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. Beam scanning and deflection are both used to distribute beam spots to elements of an array of elements for selective processing. The deflection can be performed with a solid state deflector.

Abstract: Laser-based methods and systems for removing one or more target link structures of a circuit fabricated on a substrate includes generating a pulsed laser output at a predetermined wavelength less than an absorption edge of the substrate are provided. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target link structure to reduce the reflectivity of the target link structure and efficiently couple the focused laser output into the target link structure to remove the target link structure without damaging the substrate.

Abstract: A reflective metrological scale has a metal tape substrate and a scale pattern of elongated side-by-side marks surrounded by reflective surface areas of the substrate. Each mark has a furrowed cross section and may have a depth in the range of 0.5 to 2 microns. The central region of each mark may be rippled and darkened to provide an enhanced optical reflection ratio with respect to surrounding surface areas. A manufacturing method includes the repeated steps of (1) creating a scale mark by irradiating the substrate surface at a mark location with overlapped pulses from a laser, each pulse having an energy density of less than about 1 joule per cm2, and (2) changing the relative position of the laser and the substrate by a displacement amount defining a next mark location on the substrate at which a next mark of the scale is to be created.

Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. Beam scanning and deflection are both used to distribute beam spots to elements of an array of elements for selective processing. The deflection can be performed with a solid state deflector.

Abstract: Laser-based methods and systems for removing one or more target link structures of a circuit fabricated on a substrate includes generating a pulsed laser output at a predetermined wavelength less than an absorption edge of the substrate are provided. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target link structure to reduce the reflectivity of the target link structure and efficiently couple the focused laser output into the target link structure to remove the target link structure without damaging the substrate.

Abstract: A position transducer system is disclosed for a limited rotation motor that includes an illumination source that directs illumination toward an illumination reflector that rotates with a rotor of the limited rotation motor, and a plurality of detector areas adjacent the illumination source for receiving modulated reflected illumination from the illumination reflector.

Abstract: A laser processing system is disclosed for providing a relatively small velocity of a laser beam at target location while at least one scanner scans at a relatively larger velocity. The system includes a laser source, a first scanning unit, a beam expander, a second scanning unit and focusing optics. The laser source is for providing a pulsed laser output having at least one beam with a beam dimension. The first scanning unit is for scanning the laser output in a first direction along a first axis at the target location. The beam expander is for receiving the laser output and for modifying a beam diameter of the laser output and providing a modified laser output. The second scanning unit is for scanning the modified laser output from the beam expander in a second direction along the first axis at the target location.

Abstract: A method and system for laser processing targets of different types on a workpiece are provided. The method includes setting a laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more set pulse widths based on a first type of target to be processed. The method further includes setting a pulse shape of the one or more output pulses to selectively provide the one or more output pulses having the set pulse shape based on the types of targets to be processed. The method still further includes delivering the one or more output pulses having the one or more set pulse widths and the set pulse shape to at least one target of the first type. The method finally includes resetting the laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more reset pulse widths based on a second type of target to be processed.

Abstract: An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a laser amplifier for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses.

Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. Beam scanning and deflection are both used to distribute beam spots to elements of an array of elements for selective processing. The deflection can be performed with a solid state deflector.

Abstract: A method and system for laser processing targets of different types on a workpiece are provided. The method includes setting a laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more set pulse widths based on a first type of target to be processed. The method further includes setting a pulse shape of the one or more output pulses to selectively provide the one or more output pulses having the set pulse shape based on the types of targets to be processed. The method still further includes delivering the one or more output pulses having the one or more set pulse widths and the set pulse shape to at least one target of the first type. The method finally includes resetting the laser pulse width of one or more laser pulses to selectively provide one or more laser output pulses having one or more reset pulse widths based on a second type of target to be processed.

Abstract: A laser-based method of removing a target link structure of a circuit fabricated on a substrate includes generating a pulsed laser output at a pre-determined wavelength less than an absorption edge of the substrate. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target structure to reduce the reflectivity of the target structure and efficiently couple the focused laser output into the target structure to remove the link without damaging the substrate.

Abstract: Methods and systems for laser soft marking, especially for semiconductor wafers and devices, are provided. A laser-marking system for marking a semiconductor wafer to form a softmark on the wafer is provided. The system includes a laser subsystem for generating one or more laser pulses and a controller operatively connected to the laser subsystem. The controller sets a laser pulse width of the one or more laser pulses to selectively provide one or more laser output pulses having one or more set pulse widths that affect the depth of a softmark that is to be formed. The mark depth is substantially dependent on the one or more set pulse widths. The controller further sets a pulse energy of the one or more output pulses to selectively provide the one or more output pulses having a set total output energy that is within an acceptable process energy window for producing the softmark.

Abstract: An energy-efficient method and system for processing target material such as microstructures in a microscopic region without causing undesirable changes in electrical and/or physical characteristics of material surrounding the target material is provided. The system includes a controller for generating a processing control signal and a signal generator for generating a modulated drive waveform based on the processing control signal. The waveform has a sub-nanosecond rise time. The system also includes a gain-switched, pulsed semiconductor seed laser for generating a laser pulse train at a repetition rate. The drive waveform pumps the laser so that each pulse of the pulse train has a predetermined shape. Further, the system includes a laser amplifier for optically amplifying the pulse train to obtain an amplified pulse train without significantly changing the predetermined shape of the pulses.

Abstract: A high power laser processing system is disclosed that includes a laser source and at least one optical element. The laser source provides a high power laser illumination of a first wavelength. The optical element includes a substrate that is substantially transparent to the first wavelength illumination, at least one highly reflective coating on a first side of the substrate, and at least one anti-reflective coating on a second side of the substrate.

Abstract: A limited rotation motor system is disclosed that includes a rotor shaft mounted within first and second bearing units. The rotor shaft is coupled to a helically shaped torsion member that is fixed with respect to a motor housing.

Abstract: A method, system and scan lens for use therein are provided for high-speed, laser-based, precise laser trimming at least one electrical element along a trim path. The method includes generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate. A fast rise/fall time, pulse-shaped q-switched laser or an ultra-fast laser may be used. Beam shaping optics may be used to generate a flat-top beam profile. Each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration. The wavelength is short enough to produce desired short-wavelength benefits of small spot size, tight tolerance, high absorption and reduced or eliminated heat-affected zone (HAZ) along the trim path, but not so short so as to cause microcracking. In this way, resistance drift after the trimming process is reduced.

Abstract: A system and method for inspecting machine readable marks on one side of a wafer without requiring transmission of radiant energy from another side of the wafer and through the wafer. The wafer has articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a wafer marking system and within a designated region relative to an article position. The articles have a pattern on a first side. The method includes the steps of imaging a first side of the wafer, imaging a second side of the wafer, establishing correspondence between a portion of first side image and a portion of a second side image, and superimposing image data from the first and second sides to determine at least the position of a mark relative to an article.