Abstract: A method of manufacturing a semiconductor device includes: forming a base film containing a first element and carbon on a substrate by supplying a film forming gas to the substrate; and oxidizing the base film by supplying an oxidizing gas to the substrate to modify the base film into a C-free oxide film containing the first element.

Abstract: A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.

Abstract: There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.

Abstract: There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.

Abstract: There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.

Abstract: A substrate processing apparatus includes a process chamber accommodating a substrate; a gas supply system; and an exhaust system. The supply system includes a vaporizer and a mist filter, the mist filter including a plurality of first plates and a plurality of second plates. Each of the first plates includes a first plate portion having a plurality of first grooves on a surface thereof and a first flow path. Each of the second plates includes a second plate portion having a plurality of second grooves on a surface thereof and a second flow path. When the plurality of first and second plates are arranged alternatively, the plurality of first grooves are configured to face the second flow path and the plurality of second grooves are configured to face the first flow path, such that the first flow path and the second flow path are not in-line.

Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

Abstract: A substrate processing apparatus includes a plurality of placement parts on which a substrate container is placed, a driving part configured to move the plurality of placement parts, a transport mechanism configured to load the substrate container into one of the plurality of placement parts and to unload the substrate container from one of the plurality of placement parts, and a controller configured to control the driving pan and the transport mechanism so that by raising or lowering the transport mechanism while keeping a support of the transport mechanism unmoved in an initial position, the substrate container is delivered from one of the plurality of placement parts to the support of the transport mechanism, and the substrate container is delivered from the support of the transport mechanism to one of the plurality of placement parts.

Abstract: There is provided a technique that includes: forming a film containing a main element, carbon and nitrogen on a pattern formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing the main element by supplying a precursor, which contains the main element constituting the film to be formed, to the substrate having the pattern; and (b) forming a second layer containing the main element, carbon and nitrogen by supplying a first reactant, which contains carbon and nitrogen, to the substrate so that a substance obtained by decomposing a portion of the first reactant is adsorbed on the first layer.

Abstract: In a noise canceler, interference signals received by sub-antennas 12 are cross-correlated by a first correlation-value calculation unit and the peaks of the interference signals are detected by a first peak detector. Interference signal information is acquired by a first-interference-signal information acquisition unit and the interference signals are synthesized by an interference signal synthesizer. A signal received by a main antenna and the synthesized interference signal are correlated by a second correlation-value calculation unit and the peak of the synthesized interference signal is detected by a second peak detector. The interference signal information is acquired by a second interference-signal-information acquisition unit and an interference signal replica is generated by an interference signal replica generator. The interference signal replica is subtracted by an interference signal removal unit from the signal received by the main antenna.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber, removing the precursor from the process chamber, supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate, removing the first reactant from the process chamber, supplying a second reactant containing oxygen to the substrate, and removing the second reactant from the process chamber. A time period of the act of removing the precursor is set to be longer than a time period of the act of removing the first reactant, or a time period of the act of removing the second reactant is set to be longer than the time period of the act of removing the first reactant.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber through a first nozzle; supplying an oxygen-containing gas to the substrate in the process chamber through a second nozzle made of quartz and differing from the first nozzle; and supplying a hydrogen-containing gas to the substrate in the process chamber through the second nozzle. The method further includes, prior to performing the act of forming the film, etching a surface of the second nozzle to a depth which falls within a range of 15 ?m or more and 30 ?m or less from the surface of the second nozzle.

Abstract: A method for adjusting a transmission timing of a terminal station, which is performed at a base station in a Time-Division Duplex communication system, is disclosed. The method includes (a) receiving ranging signals or other reference signals, transmitted from a terminal station; (b) determining whether transmission timing at the terminal station is appropriate or not, by referring to the ranging signals transmitted from the terminal station; and (c) transmitting a value for adjusting the transmission timing at the terminal station. The value of the transmission timing is a value of the integral multiples of the timing offset detection capability of the ranging signal, or a value calculated by referring to the received reference signals, which have assigned with a different interval from an interval of the ranging signals.

Abstract: A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.

Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).

Abstract: According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

Abstract: A substrate processing apparatus includes a substrate retaining mechanism; a detecting unit detecting a placed state of the substrate retained by the substrate retaining mechanism; a first determination unit comparing detection data of the substrate obtained by the detecting unit with master data that is a reference to determine if the detection data is within a first allowed value; a confirmation unit confirming substrate type; a second determination unit comparing the detection data of the substrate with the master data to determine if the detection data is within a second allowed value; and a transfer control unit controlling the substrate retaining mechanism depending on a determination result of the second determination unit when substrate type is confirmed as a predetermined type by the confirmation unit when it is determined that the detection data is not within the first allowed value as determined by the first determination unit.

Abstract: There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.