Abstract: There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

Abstract: There is provide a technique that includes preparing a substrate, in which an insulating film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 ? or smaller is formed on the insulating film, in a process chamber; raising a temperature of the substrate to a first temperature with an electromagnetic wave; crystallizing the process target film for a first process time period while maintaining the first temperature; raising the temperature of the substrate to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the act of crystallizing the process target film; and repairing a crystal defect of the crystallized process target film for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

Abstract: A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.

Abstract: An image processing device or a method of processing an image is disclosed. The method includes receiving an image, detecting a plurality of person images in the image, identifying at least a first person image from among the plurality of person images by a preferential method, identifying at least a second person image from among the plurality of person images excluding the first person image, by an exhaustive method, and extracting a first feature amount as to the first person image and a second feature amount as to the second person image during a time interval. For example, the total number of the first person images and the second person images is no more than a maximum number of person images, identified by performance corresponding to process the person images during the time interval.

Abstract: An outphasing power amplifying device includes a switching signal generating circuit configured to generate a switching pulse signal for switching a class-D power amplifier from two types of sinusoidal wave generated based on amplitude and phase of a modulated wave to be transmitted. The switching signal generating circuit includes: a sin calculation unit and a cos calculation unit for converting phase information of the two types of sinusoidal wave into a quadrature format; a DA converter for converting the quadrature-format phase information; a first filter for removing an aliasing component from the analogue signal; an analogue quadrature modulator for generating a sinusoidal wave from the analogue signals by using a local signal; a second filter for allowing a radio frequency and a component in the vicinity thereof to pass therethrough; and a comparator for converting the sinusoidal wave into a switching pulse signal by comparison with a reference voltage.

Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.

Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.

Abstract: A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the first mask, a process of forming a second mask on a second region of the metal film, and a process of modulating the work function of a second exposed region of the metal film, using plasma of a second process gas are executed.

Abstract: A method of manufacturing a semiconductor device includes: (a) processing a substrate accommodated in a process chamber by supplying an inert gas into a tank storing a precursor via a first supply pipe, supplying the precursor from an interior of the tank into the process chamber via a second supply pipe connected to the first supply pipe by a connection pipe, and exhausting the precursor from the interior of the process chamber; and (b) purging an interior of the first supply pipe, an interior of the connection pipe and an interior of the second supply pipe by alternately repeating: supplying a heated inert gas into the first supply pipe, the connection pipe and the second supply pipe, and exhausting the heated inert gas; and vacuumizing the interior of the first supply pipe, the interior of the connection pipe, and the interior of the second supply pipe.

Abstract: Described herein is a technique capable of uniformly processing substrates. According to the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a gas supply configured to supply a gas into the process chamber; a plasma generator configured to plasma-excite the gas supplied into the process chamber, the plasma generator including an electrode electrically connected to a high frequency power source; an impedance meter configured to measure an impedance of the plasma generator; a determiner configured to determine an amount of active species generated by the plasma generator based on the impedance measured by the impedance meter; and a controller configured to control the high frequency power source based on the amount of active species determined by the determiner.

Abstract: A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.

Abstract: A substrate processing apparatus includes an accommodating chamber including a loading shelf configured to load a storage vessel that accommodates a substrate; a transfer mechanism installed in a ceiling part of the accommodating chamber and configured to hold an upper portion of the storage vessel and transfer the storage vessel; and a port configured to load and unload the storage vessel to and from the accommodating chamber.

Abstract: Described herein is a technique capable of suppressing a generation of particles. A substrate processing apparatus may include: a substrate support including: a protruding portion supporting a substrate including a pattern region at a center thereof and a non-contacting region at a periphery thereof; and a bottom portion defining a space along with the protruding portion; a process chamber wherein the substrate support is provided and the substrate is processed; a process gas supply unit configured to supply a process gas into the process chamber; and a hot gas supply unit configured to heat and supply an inert gas into the space.

Abstract: An imaging device is implemented that corrects contour distortion of the telephoto and wide-angle ends of zoom lens and a reflex lens where the way the contour is distorted significantly differs between the centerward and receding directions. A UHDTV imaging device with a landscape aspect ratio such as 16:9 uses a high-power zoom lens or a reflex lens, obtains type information and aperture ratio information of the lens, obtains and stores coma aberration information of the lens, and individually and independently calculates the amounts of left and right horizontal contour correction in proportion to a distance from the center of a screen (h?H/2), based on the obtained type information and aperture ratio information of the lens and the stored coma aberration information, and individually and independently performs left and right horizontal contour correction, using one of multi-stage horizontal contour correction, multi-stage vertical contour correction, and multi-stage oblique contour correction.

Abstract: There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.

Abstract: A substrate processing apparatus and technique, capable of processing substrates regardless of the types of substrates, include a loadlock chamber accommodating a first support part and a second support part for supporting a wafer; a first transfer mechanism including first tweezers configured to transfer the substrate into or out of the loadlock chamber through a first side of the loadlock chamber; a second transfer mechanism including second tweezers configured to transfer the substrate into or out of the loadlock chamber through a second side of the loadlock chamber; and a reactor where the substrate is processed. The first support part includes first support mechanisms spaced apart by a first distance along a direction perpendicular to an entering direction of the first tweezers or the second tweezers, and the second support part includes second support mechanisms spaced apart by a second distance smaller than the first distance.