Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device which includes: supplying a process gas to a process chamber in a state in which a substrate with an insulating film formed thereon is mounted on a substrate support part inside the process chamber; supplying a first power from a plasma generation part to the process chamber to generate plasma and forming a first silicon nitride layer on the insulating film; and supplying a second power from an ion control part to the process chamber in parallel with the generation of plasma, to form a second silicon nitride layer having lower stress than that of the first silicon nitride layer on the first silicon nitride layer.

Abstract: A wireless communication technique in which information that has been encoded and interleaved (the sequence of bits has been rearranged) on the transmission side is subjected to iterative decoding processing by using a demodulator, a deinterleaver, a decoder, and an interleaver on the receiving side.

Abstract: There is provided a substrate processing apparatus which includes: a processing container in which a substrate is accommodated; a substrate supporting part configured to support the substrate inside the processing container and including a support electrode; an upper electrode installed to face the substrate supporting part; a first impedance control part having one end connected to the upper electrode; a second impedance control part having one end connected to the support electrode; a processing gas supply part configured to supply a processing gas to the substrate; an activation part configured to activate the processing gas, the activation part being installed outside the processing container and being connected to a power supply part via an insulating part; and a third impedance control part having one end connected between the insulating part and the activation part.

Abstract: There is provided a technique which includes: forming a film containing at least Si, O and N on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system; forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.

Abstract: A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas.

Abstract: There is provided a configuration that includes a plurality of substrate processing apparatuses and a management device for managing the plurality of substrate processing apparatuses. Upon receiving information specifying a substrate processing apparatus as a reference and file information designating a predetermined device file, the plurality of substrate processing apparatuses transmits request data including first device information and first data information to the management device. Upon receiving the request data, the management device transmits the received request data to the reference substrate processing apparatus. The reference substrate processing apparatus creates response data including second data information responding to the first data information and transmits the created response data to the management device. Upon receiving the response data, the management device transmits the received response data to the plurality of substrate processing apparatuses.

Abstract: There is provided a technology includes: heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate until the heat insulating plate reaches the processing temperature; heating the substrate, to the processing temperature and measuring a temperature change of the substrate until the substrate reaches the processing temperature; obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate and heating the substrate by controlling the heating device based on the temperature of the heat insulating plate and the correlation.

Abstract: A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. In the step of supplying the reducing gas, the exposure amount of the reducing gas with respect to the substrate is adjusted in accordance with the property of the reducing gas.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate; and forming a film on the substrate by supplying a silicon hydride and a halogen element-free catalyst containing one of a group III element or a group V element to the substrate, under a condition that the silicon hydride is not thermally decomposed when the silicon hydride is present alone.

Abstract: SISO decoding of a reception signal having a scrambled symbol arrangement is realized using a process having reduced complexity. Coordinates are generated for a reference point obtained by scrambling and mapping a symbol number not a symbol reference point position. This reference point simulates transmission-side scrambling and is generated for each symbol number by a first mapping unit. Because the binary expression of a corresponding original signal number is retained, a bit likelihood calculation unit can easily calculate a bit likelihood based on the distance between the reference point and a reception signal. The calculated bit likelihood is then deinterleaved and subjected to SISO error-correcting decoding. The thus obtained bit likelihood is then reinterleaved and used to calculate a symbol probability. Soft symbols are generated through the multiplication of all the calculated symbol probabilities by corresponding reference points output by a second mapping unit similar to the first mapping unit.

Abstract: There is provided a technique for facilitating a patterning process by the DSA appropriately and efficiently. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including (a) accommodating in a process chamber a substrate having a guide pattern thereon; (b) supplying a plasma of a first process gas into the process chamber to subject the substrate to first one of a first process for hydrophilizing the substrate and a second process for hydrophobilizing the substrate; and (c) supplying a plasma of a second process gas into the process chamber to subject the substrate to second one of the first process and the second process other than the first one of the first process and the second process.

Abstract: A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Abstract: A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.

Abstract: A gas supply system for improving concentration uniformity of a process gas supplied to substrates arrayed in a longitudinal direction includes first and second gas supply tubes that supply process gas from respective upper ends, and configured to supply the process gas for processing substrates to a process chamber that accommodates a plurality of the substrates arrayed in a longitudinal direction, wherein L1 is configured to be longer than L2 and S1 is configured to be smaller than S2, when the length of the first gas supply tube facing a substrate arrangement region where the substrates are arranged is L1, the flow path sectional area of the first gas supply tube is S1, the length of the second gas supply tube facing the substrate arrangement region is L2, and the flow path sectional area of the second gas supply tube is S2.

Abstract: In a method for determining upper and lower limit values for a target brightness when image contrast is extended, an upper and lower limit value search processing unit establishes two adjacent areas in accordance with brightness of a grayscale histogram, and, while scanning the positions of those areas, compares the frequency of those areas to a threshold, and if one frequency value is greater than or equal to the threshold value and the other frequency value is lower than the threshold, performs upper and lower limit value search processing wherein a brightness value at the boundary of the two areas is determined as an upper or lower limit value. Thresholds for upper and lower limit value search start position and frequency are established based on the shape of the grayscale histogram of an image to be processed. The shape of the grayscale histogram is identified according to preset classifications.

Abstract: Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal, film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first, metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.