Abstract: An imaging apparatus includes an AF evaluation value calculation unit for calculating an AF evaluation value by integrating a focus differential signal value. The AF evaluation value calculation unit includes a high luminance region determination unit for extracting a feature of each pixel value and determining whether or not the feature is a backlight scene in a dark place, and a band determination unit for determining a band of a contour component of a subject. A focus differential signal value on a low luminance region side in a contour component formed by a boundary between a high luminance region and a low luminance region due to backlighting is excluded from the integration, and the AF evaluation value is calculated using only a focus differential signal value on the high luminance region side in the contour component of the subject to be focused as an object for the integration.

Abstract: In a communication device and a communication method, multiple pieces of QoS control information are stored in a routing information base, each piece of QoS control information, with a terminal wired to the communication device itself as a transmission source, defining a bandwidth control value and a priority degree that correspond to communication data specified by a combination of the transmission source and a destination. When communication data is inputted, a control unit selects QoS control information that matches a combination of the transmission source and the destination of the inputted communication data from among the stored multiple pieces of QoS control information and indicates a bandwidth to a bandwidth control unit on the basis of the selected QoS control information, indicates a priority degree to a DSCP marking unit, and performs wireless transmission.

Abstract: Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

Abstract: A contour enhancement processing circuit includes a crisp circuit for removing a noise component from a contour component signal using a crisp signal for removing a noise component in the contour component signal and outputting a contour signal, a crisp gain control circuit for obtaining a gain for controlling amplification of a signal becoming the basis of the crisp signal according to a video level and outputting the gain as a crisp gain, a multiplier for multiplying the crisp gain and the signal becoming the basis of the crisp signal and outputting a crisp signal to the crisp circuit, a gain circuit for amplifying the contour signal from which a noise component is removed in the crisp circuit, and an adder for adding the video signal transmitted from a delay circuit and the amplified contour signal transmitted from the gain circuit and outputting a contour-enhanced video signal.

Abstract: A wireless communication system comprises a mobile communication apparatus, and a terminal device. The mobile communication apparatus comprises a first wireless unit that wirelessly communicates control information to and from the terminal device in a first communication method, and a second wireless unit that wirelessly communicates user information to and from the terminal device in a second communication method that uses a higher frequency band than the first communication method. The terminal device comprises a third wireless unit that performs wireless communication to and from the first wireless unit, and a fourth wireless unit that performs wireless communication to and from the second wireless unit. The mobile communication apparatus or the terminal device determines a timing of wireless communication to be performed between the second wireless unit and the fourth wireless unit by performing wireless communication between the first wireless unit and the third wireless unit.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and (b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region and a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region are within a predetermined range.

Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.

Abstract: Described herein is a technique capable of suppressing a generation of particles. A substrate processing apparatus may include: a substrate support including: a protruding portion supporting a substrate including a pattern region at a center thereof and a non-contacting region at a periphery thereof; and a bottom portion defining a space along with the protruding portion; a process chamber wherein the substrate support is provided and the substrate is processed; a process gas supply unit configured to supply a process gas into the process chamber; and a hot gas supply unit configured to heat and supply an inert gas into the space.

Abstract: An image-processing device for performing correction processing and event detection adaptively to the effect of a disturbance that an input image has received is disclosed. The device has a disturbance detection unit, an image correction unit, and an event detection unit. The disturbance detection unit analyzes an input image, detects the effects of a plurality of disturbances that the input image has received, and outputs the detected effects as disturbance information. The image correction unit applies correction processing to an input video in accordance with the disturbance information, and outputs a corrected image and correction information indicating the actually applied correction. The disturbance detection unit estimates the degree of the plurality of disturbances residual in the corrected image from the disturbance information and the correction information, and detects a specific event using a detection process selected in accordance with the degree of disturbances.

Abstract: There is provided a technique that includes arranging a plurality of substrates inside a process container in a vertical direction; and forming a film on each of the plurality of substrates by supplying a process gas into the process container. The act of forming the film includes: supplying the process gas into the process container; and performing pressure control such that a pressure inside the process container becomes a process pressure. A start timing of the act of supplying the process gas is adjusted with respect to a start timing of the act of performing the pressure control to adjust a thickness of a film formed on a substrate arranged on an upper portion of the plurality of substrates.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.

Abstract: A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit.

Abstract: A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.

Abstract: A technique includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains at least a predetermined element and oxygen, and forming a second film which contains at least the predetermined element, oxygen and carbon. The first film and the second film are laminated to form the laminated film.

Abstract: In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.

Abstract: The present invention provides a crowd monitoring system with which it is possible to obtain a crowd density accurately, irrespective of the congestion state. This crowd monitoring system 100 is provided with: an image acquiring unit 101 which acquires a plurality of images; an arithmetic logic unit 108; and a storage unit 106 which stores information relating to relationships between image feature quantities and an object density, acquired in advance, and information relating to relationships between motion feature quantities and the object density. The arithmetic logic unit 108 comprises: an image feature quantity acquiring unit 103 which obtains image feature quantities of objects in the acquired images; a motion line acquiring unit 104 which obtains motion lines of the objects in the acquired images; a motion feature quantity acquiring unit 105 which obtains motion feature quantities of the objects on the basis of the obtained motion lines; and a crowd density acquiring unit 107.

Abstract: Image data pertaining to substrate transfer is efficiently collected and stored for use in analyzing transfer errors. A substrate processing device includes a first control part for stopping a transfer part upon detecting a transfer error in the transfer part for transferring a substrate; a storage part for storing substrate transfer operations of the transfer part as image data; and a second control part for accumulating the image data in an accumulation part at a predetermined period. The first control part obtains information indicating a state of the substrate from the transfer part or a processing part, and notifies the second control part that the transfer part is stopped due to the transfer error. The second control part retrieves image data of a predetermined period of time including the time that the transfer error occurs from the accumulation part, and converts the image data into a file.

Abstract: There is provided a method of manufacturing a semiconductor device, including: transferring a substrate to a module having a first process chamber and a second process chamber; reading a recipe program depending on a type and a number of the substrate; and processing the substrate according to the recipe program, wherein in the act of processing the substrate, a first data indicating a state of the first process chamber and a second data indicating a state of the second process chamber are respectively detected, and a comparison between the first data and a previously-acquired first reference data and a comparison between the second data and a previously-acquired second reference data are displayed on a display screen.

Abstract: A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.