Abstract: The method of calibrating a two-point modulation phase locked loop (PLL) comprises observing, between the loop filter and the second injection point, the loop control signal over at least one period of the first periodic control signal; generating, from the observed loop control signal, a distortion profile; and applying the distortion profile to the second periodic control signal before injecting the second periodic control signal in the PLL. Since, in the case of non-linearity in the controlled oscillator, the PLL output deviates from the ideally expected one, cancellation through the first injection point becomes imperfect disturbing the loop. This error pattern can be observed on the loop filter which allows to generate a distortion profile to distort the second periodic control signal for the next period of the modulation. This will mitigate the effects of the non-linearity of the oscillator.

Abstract: An enhancement device (10, 116) for enhancing service requests (120) and a method of allocating network resources to a network service in a communication network is provided. The communication network comprises network resources capable of providing a network service specified in a service request issued by a client. The service request (120) comprises a direct part (121) and an indirect part (122), while the indirect part comprises at least one allocation condition.

Abstract: A method for forming a semiconductor device, the method including: providing a substrate with at least one fin or nanowire; forming a dummy gate; providing spacers on the at least one fin or nanowire and the dummy gate; performing a first RMG module wherein high-k material is provided on at least one fin or nanowire, between the spacers; one or more annealing steps; providing a sacrificial plug between the spacers; epitaxially growing a source and drain in the at least one fin or nanowire; removing the sacrificial plug; performing a second RMG module wherein a WFM is deposited between at least part of the spacers such that the WFM is covering the high-k material of the at least one fin or nanowire.

Abstract: An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

Abstract: Disclosed herein are microfluidic actuators for selecting objects in a fluid stream comprising a plurality of objects. In some embodiments, the actuator comprises an object detection means adapted for, upon arrival of an object, identifying whether an object is an object of interest. It further comprises a heater adapted for generating a jet flow for deflecting an object of interest from the fluid stream and a controller for activating the heater as function of the detection of an object of interest using a nucleation signal. The controller is adapted for obtaining temperature information of the heater and for adjusting a nucleation signal for the heater taking into account the obtained temperature information. Also disclosed are microfluidic systems and diagnostic devices comprising the microfluidic actuators of the disclosure, as well as methods of use thereof.

Abstract: A communication system includes a base station, at least one remote radio head, and at least one channel. The base station has at least two digital modulators adapted for modulating a first and a second incoming radio signal to obtain a first and a second quantized signal, a multiplexer for interleaving the quantized signals, and a transmitter adapted for transmitting the resulting quantized signal over the channel to the remote radio head. The remote radio head includes a receiver adapted for capturing the quantized signal, a clock extraction module adapted for converting the signal from the receiver into a clock signal, a demultiplexer for splitting the quantized signal using the clock signal to obtain at least two quantized signals, and a filter adapted for removing quantization noise from the quantized signal from the receiver or the demultiplexer.

Abstract: Integrated circuit comprising an interconnection system comprising at least one multilevel layer comprising first parallel electrically conductive lines, the multilevel layer comprising at least three levels forming a centerline level, an upper extension line level, and a lower extension line level the levels providing multilevel routing tracks in which the lines extend.

Abstract: A transimpedance amplifier is provided for converting a current between its two input terminals to a voltage over its two output terminals comprising a high-speed level shifter configured for creating a difference in input DC voltage and for being transparent for alternating voltages, an input biasing network configured for reverse biasing a photodiode connected to at least one of the input terminals and transparent for a feedback signal from the feedback network which is differentially and DC-coupled with the output terminals of the voltage amplifier and outputs of the feedback network are differentially and DC-coupled with the input biasing network of which outputs are coupled with inputs of the level shifter which is differentially and DC-coupled with input terminals of the voltage amplifier.

Abstract: A multi-user access node for receiving concurrent signals which are carrying redundant chip sequences at a baseband rate, the access node including: a plurality of antennas organized in an antenna configuration; a main transceiver comprising an analog receiver and an ADC for converting an incoming signal into a digital signal which comprises the incoming chip sequences; a switch for switching the transceiver between the plurality of antennas; a controller configured for: initializing the multi-user access node by switching the transceiver between the plurality of antennas to capture a spatial character of the different users based on unique initialization chip sequences from the different users, separating collided chip sequences transmitted by different users by switching the transceiver between the plurality of antennas according to a scrambling sequence and by using the spatial character in combination with the applied scrambling sequence.

Abstract: A single-photon avalanche diode (SPAD) is disclosed. In one aspect, the SPAD comprises an inner doped region, a geometrical structure of a boundary of the inner doped region rotationally symmetric in a horizontal direction of a substrate; at least one outer doped region connected to a second terminal, the at least one outer doped region arranged to at least partially enclose the inner doped region and the outer doped region comprising dopant implantations of a different type than the inner doped region; a lowly doped depletion volume arranged to surround the inner doped region, a depth of the lowly doped depletion volume extending from the top surface of the substrate into the substrate being larger than a depth of the at least one outer doped region, and when a reverse bias is applied to an anode, an electric field peak around the inner doped region being formed to enable impact ionization and multiplication of charges.

Abstract: A method for forming a buried metal line in a substrate includes forming, at a position between a pair of semiconductor structures protruding from the substrate, a metal line trench in the substrate at a level below a base of each semiconductor structure of the pair. Forming the metal line trench includes etching an upper trench portion in the substrate, forming a spacer on sidewall surfaces of the upper trench portion that expose a bottom surface of the upper trench portion, and, while the spacer masks the sidewall surfaces, etching a lower trench portion by etching the substrate via the upper trench portion such that a width of the lower trench portion exceeds a width of the upper trench portion. The method further includes forming the metal line in the metal line trench.

Abstract: Disclosed herein are cell differentiating systems for differentiating cells. The systems comprise an input means for receiving a reconstructed image of a cell based on a holographic image of the cell in suspension, and a cell recognition means for determining cell characterization features from the reconstructed image of the cell for characterization of the cell. The cell recognition means thereby is configured for determining, as cell recognition features, image moments.

Abstract: The disclosed technology relates generally to the field of semiconductor devices, and more particularly to co-integration of GaN-based devices with Si-based devices. In one aspect, a method of forming a semiconductor device includes forming a first wafer including, on a front side thereof, a III-V semiconductor layer stack formed on a first substrate and a first bonding layer. The III-V semiconductor layer stack includes a GaN-based device layer structure formed on the first substrate. The method additionally includes, subsequent to forming the first wafer, bonding the first bonding layer to a second bonding layer of a second wafer. The second wafer includes a second silicon substrate supporting an active device layer, a back-end-of-line interconnect structure and the second bonding layer. The method further comprises, subsequent to bonding, thinning the first wafer from a backside, wherein thinning includes removing at least the first substrate.

Abstract: The invention pertains to a method for determining transmission parameters in a wireless local area network operating under a restricted access window scheme, said wireless local area network comprising an access point and a plurality of stations, the method comprising at said access point: estimating (230) respective transmission intervals and next transmission times of said plurality of stations; and assigning (260) a subset of said plurality of stations to a restricted access window group on the basis of said estimated next transmission times. The invention also pertains to a computer program product comprising code means configured to cause a processor to carry out the method and an access point configured to carry out the method.

Abstract: Embodiments relate to a sensor structure for an acoustical pressure sensor and an opto-mechanical sensor and system that may be used for detecting acoustical pressure waves. Embodiments of a sensor structure for an acoustical pressure sensor include an optical waveguide closed-loop resonator and a plurality of sensor elements. The individual sensor elements of the plurality of sensor elements are configured to be affected by an acoustical pressure wave such that a physical property of the individual sensor element is changed. The optical waveguide closed-loop resonator is arranged at the plurality of sensor elements and associated with each of the individual sensor elements such that a resonance frequency of the optical waveguide closed-loop resonator is shifted due to the affected physical properties of all individual sensor elements. The sensor structure provides a high sensitivity from each sensor element, which is advantageous in e.g.

Abstract: Example embodiments relate to microfluidic devices for controlling pneumatic microvalves. One embodiment includes a microfluidic device for independently controlling a plurality of pneumatic microvalves. The microfluidic device is couplable to a pressure source. The microfluidic device includes a first substrate. The microfluidic device also includes a flexible membrane covering the first substrate. Additionally, the microfluidic device includes a second substrate covering the flexible membrane. Further, the microfluidic device includes one or more fluidic channels at least partially defined in the first substrate. In addition, the microfluidic device includes a pressure couplable to the pressure source and branching into a plurality of pressure channels. Still further, the microfluidic device includes at least one pressure control switch per pressure channel.

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (?LED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.

Abstract: Example embodiments relate to imaging devices for in-line holographic imaging of objects. One embodiment includes an imaging device for in-line holographic imaging of an object. The imaging device includes a set of light sources configured to output light in confined illumination cones. The imaging device also includes an image sensor that includes a set of light-detecting elements. The set of light sources are configured to output light such that the confined illumination cones are arranged side-by-side and illuminate a specific part of the object. The image sensor is arranged such that the light-detecting elements detect a plurality of interference patterns. Each interference pattern is formed by diffracted light from the object originating from a single light source and undiffracted light from the same single light source. At least a subset of the set of light-detecting elements is arranged to detect light relating to not more than one interference pattern.

Abstract: A device (110) for illuminating a particle comprises: a light waveguide (112; 412a, 412b; 512a, 512b) arranged on a substrate (114); an output coupler (118) configured to output a light beam (150; 450a, 450b; 550a, 550b) forming a sheet-like shape having a cross-section which has an extension in a first direction being larger than a size of a particle; and a fluidic channel (116; 416; 516) arranged on the substrate (114) for guiding a flow of particles along a longitudinal direction of the fluidic channel (116; 416; 516); wherein the sheet-like shape of the light beam (150; 450a, 450b; 550a, 550b) is arranged within the fluidic channel (116; 416; 516) and the first direction of the cross-section of the light beam (150; 450a, 450b; 550a, 550b) forms an angle to the longitudinal direction of the fluidic channel (116; 416; 516).

Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.