Abstract: An electrode arrangement for stimulating and recording electrical signals in biological matter comprises: an array (110) of electrodes (112), wherein electrodes (112) are configured to be switchable between stimulating and recording of electrical signals; a control unit (120), wherein the control unit (120) is configured to select a plurality of electrodes (112) to form a combined macroelectrode site (114) for providing a stimulating signal, wherein the control unit (120) is further configured to determine a perimeter electrode (112b) and a central electrode (112a), wherein the perimeter electrode (112b) is arranged at a perimeter of the combined macroelectrode site (114) and the central electrode (112a) is arranged centrally within the combined macroelectrode site (114), and wherein the control unit (120) is further configured to provide a stimulation signal to the perimeter electrode (112b) that has a lower magnitude than a stimulation signal provided to the central electrode (112a).

Abstract: A method of generating a model for generating a synthetic electrocardiography (ECG) signal comprises: receiving subject-specific training data for machine learning, said training data comprising a photoplethysmography (PPG) signal acquired from the subject and an ECG signal acquired from the subject, wherein the ECG signal provides a ground truth of the subject for associating the ECG signal with the PPG signal; using associated pairs of a time-series of the PPG signal and a corresponding time-series of the ECG signal as input to a deep neural network, DNN; and determining, through the DNN, a subject-specific model relating the PPG signal of the subject to the ECG signal of the subject for converting the PPG signal to a synthetic ECG signal using the subject-specific model.

Abstract: A measurement unit for measuring a bio-impedance of a body, the measurement unit comprising a current generator circuit, a readout circuit, and a baseline cancellation current circuit, wherein the current generator circuit is configured to amplify a reference current to form a measurement current to be driven through a body to generate a measurement voltage representing the bio-impedance; wherein the readout circuit comprises a Instrumentation amplifier (IA) which has a transconductance stage and a transimpedance stage, wherein the IA is configured to: produce a first current in the transconductance stage, the first current being proportional to the measurement voltage, receive a second current from the baseline cancellation current circuit, produce an output voltage in the transimpedance stage, the output voltage being proportional to a difference between the first current and the second current and representative of the measured bio-impedance; wherein the baseline cancellation current circuit is confi

Abstract: Example embodiments relate to methods and devices for generating (quasi-) periodic interference patterns. One embodiment includes a method for generating an interference pattern using multi-beam interference of electromagnetic radiation. The method includes computing a set of grid points in a complex plane representing a grid with a desired symmetry. The method also includes selecting a radius of a virtual circle. Additionally, the method includes selecting a set of grid points in the complex plane that lies on the virtual circle centered around a virtual center point. Further, the method includes associating an argument of each grid point of the selected set of grid points in the complex plane with a propagation direction of plane waves or quasi plane waves or parallel wave fronts. In addition, the method includes obtaining the interference pattern that is a superposition of the plane waves or quasi plane waves or parallel wave fronts.

Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

Abstract: In a first aspect, the present invention relates to a perovskite material comprising negatively charged layers alternated with and neutralized by positively charged layers; the negatively charged layers having a general formula selected from the list consisting of: Ln?1MnX3n+1, LnMnX3n+2, and Ln?1M?nX3n+3, and the positively charged layers comprising: one or more organic ammonium cations independently selected from monovalent cations Q and divalent cations Q?, or a polyvalent cationic conjugated organic polymer Z, wherein Q, Q? and Z comprise each a ?-conjugated system in which at least 8 and preferably at least 10 atoms participate, L is a monovalent cation, Mn are n independently selected metal cations averaging a valence of two, M?n are n independently selected metal cations averaging a valence equal to 2+2/n, X is a monovalent anion, and n is larger than 1.

Abstract: A solid electrolyte (10) of the present disclosure includes porous silica (11) having a plurality of pores (12) interconnected mutually and an electrolyte (13) coating inner surfaces of the plurality of pores (12). The electrolyte (13) includes 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide represented by EMI-FSI and a lithium salt dissolved in the EMI-FSI. A molar ratio of the EMI-FSI to the porous silica (11) is larger than 1.0 and less than 3.5.

Abstract: The present disclosure relates to a semi-conductor structure and method for co-integrating a III-V device with a group IV device on a SixGe1-x(100) substrate.

Abstract: An odd harmonic generation device is provided. The odd harmonic generation device includes an even harmonic generation unit and a mixer. In this context, the even harmonic generation unit is configured to generate two even harmonic signals on the basis of a fundamental signal. In addition to this, the mixer is configured to mix the fundamental signal with the two even harmonic signals to generate a desired odd harmonic signal.

Abstract: Example embodiments relate to methods and apparatuses for aligning a probe for scanning probe microscopy (SPM) to the tip of a pointed sample. One embodiments includes a method for aligning an SPM probe to an apex area of a free-standing tip of a pointed sample. The method includes providing an SPM apparatus that includes the SPM probe; a sample holder; a drive mechanism; and detection, control, and representation tools for acquiring and representing an image of a surface scanned by the SPM probe. The method also includes mounting the sample on the sample holder. Further, the method includes positioning the probe tip of the SPM, determining a 2-dimensional area that includes the pointed sample, performing an SPM acquisition scan, evaluating and acquired image, and placing the SPM probe in a position where it is aligned with an apex area of the free-standing tip of the pointed sample.

Abstract: In one aspect, a method of forming a semiconducting device can comprise forming, on a substrate surface, a stack comprising semiconductor material sheets and a bottom semiconductor nanosheet; forming a trench through the stack vertically down through the bottom semiconductor nanosheet, thereby separating the stack into two substacks; selectively removing the bottom semiconductor nanosheet, thereby forming a bottom space extending under the substacks; and filling the bottom space and the trench with a dielectric material to provide a bottom isolation and formation of a dielectric wall between the substacks.

Abstract: The disclosed technology relates generally to semiconductor devices, and more particularly to a layer stack for a magnetic tunnel junction (MTJ) device, and a method of forming the same. According to an aspect, a layer stack for a (MTJ) device comprises a seed layer structure, a pinning layer structure arranged above the seed layer structure, and above the pinning layer structure a Fe-comprising reference layer structure and a free layer structure separated by a tunnel barrier layer. The seed layer structure comprises a Ru-comprising layer and a Cr-comprising layer. The Cr-comprising layer forms an upper layer of the seed layer structure.

Abstract: Described herein are sample loading systems for loading a sample into a processing and/or analysis system comprising: a sample reservoir for receiving a sample and a metering volume reservoir, the sample reservoir and a first side of the metering volume reservoir being interconnected through a first channel with a first flow resistance to allow filling of the metering volume reservoir with sample; a further reservoir for receiving a second fluid interconnected with the metering volume reservoir at the first side via a second channel having a smaller second flow resistance; a first valve for blocking flow of sample from the metering volume reservoir into the second channel; a second valve connected to a second side of the metering volume reservoir for controlling the blocking and flowing of sample; and a first timing circuitry for timing the opening of the second valve as a function of filling of the further reservoir.

Abstract: A method for forming a Ga-doped SiGe layer comprises depositing, in the presence of a C-containing Ga precursor, Ga-doped SiGe on a substrate, thereby forming a first portion of the Ga-doped SiGe layer. The method further comprises depositing, in the absence of the C-containing Ga precursor, SiGe on the first portion, thereby forming a second portion of the Ga-doped SiGe layer.

Abstract: Examples include a driver circuit for driving a voltage controlled electro-optical modulator. The driver circuit includes a supply input and an input for receiving the input voltage. The driving circuit further includes a level shifter circuit, which includes first and second capacitors and is electrically connected to the input, and a voltage distribution circuit, which is electrically connected between the level shifter circuit and an output of the driver circuit for providing the output voltage. The level shifter circuit is configured to generate, based on the input voltage and using the first capacitor, a first voltage varying between the positive supply voltage level and a positive first level that is greater than the positive supply voltage level. The level shifter circuit is also configured to generate, based on the input voltage and using the second capacitor, a second voltage varying between ground and a negative second level.

Abstract: A localized smart energy management system comprises a plurality of controllable loads, at least one intermittent energy source, a selectively connectable dispatchable energy source, and optionally an energy storage system. A method for balancing power production and power consumption of such localized smart energy management systems in real time comprises performing a coarse-grained optimization in a first layer of a hierarchical optimization structure to generate a predicted schedule, based on long-term load demand profiles and long-term power generation profiles. A second layer iteratively refines the predicted schedule upon receiving a new forecast of a short-term power generation profile for the at least one intermittent energy source.

Abstract: A phased array ultrasound device includes transducer elements arranged in a two dimensional array; first electrodes, each first electrode extending along a first direction; and second electrodes, each second electrode extending along a second direction, where each transducer element is associated with one first electrode and one second electrode, where each transducer element includes a material located between its associated first electrode and second electrode, and is configured to emit an ultrasonic wave induced by a vibration force or an oscillation force of its material when the transducer element is actuated based on control signals applied to its associated first electrode and second electrode, where each transducer element has a unipolar actuation force direction, and where the phased array ultrasound device is configured to create a pressure focus point by actuating a set of transducer elements to form a combined ultrasonic wave.

Abstract: The disclosed technology relates to a multibit memory cell. In one aspect, the multibit memory cell includes a plurality of spin-orbit torque (SOT) tracks, plurality of magnetic tunnel junctions (MTJs), an electrically conductive path connecting a first MTJ and a second MTJ together, and a plurality of terminals. The plurality of terminals can be configured to provide a first SOT write current to the first MTJ, a second SOT write current to the second MTJ, and at least one of: the second SOT write current to a third MTJ, a third SOT write current to the third MTJ, and a spin transfer torque (STT) write current through the third MTJ. The junction resistances of the various MTJs are such that a combined multibit memory state of the MTJs is readable by a read current through all the MTJs in series.

Abstract: According to an aspect of the disclosed technology, there is provided a method comprising: providing a substrate, the substrate supporting an STI-layer and a set of fin structures, each fin structure comprising an upper portion protruding above the STI-layer, forming a spacer layer over the upper portions of the set of fin structures and the STI-layer, forming a sacrificial layer over the spacer layer, the sacrificial layer at least partially embedding the upper portions of the fin structures, partially etching back the sacrificial layer to expose spacer layer portions above upper surfaces of the upper portions of the set of fin structures, and etching the spacer layer and exposing at least the upper surfaces of the upper portions of the set of fin structures, while the sacrificial layer at least partially masks spacer layer portions above the STI-layer.

Abstract: A wideband radio-frequency transceiver front-end is provided. The transceiver front-end includes an antenna port and a transmission path coupled to the antenna port comprising a power amplifier and a first matching network. The transceiver front-end further includes a reception path coupled to the antenna port comprising a low noise amplifier and a second matching network. Furthermore, the transceiver front-end includes an impedance inverter coupled in-between the antenna port and the second matching network. Moreover, the transceiver front-end includes a controller comprising switching arrangement for a gate and a drain of the power amplifier. In this context, the controller is configured to initiate a first reception mode by connecting the gate of the power amplifier to ground and by connecting the drain of the power amplifier to a supply voltage.