Abstract: In a first aspect, the present disclosure relates to a method for designing a pattern of a stress relief layer for a flat device to be transformed into a shape-retaining non-flat device by deformation of the flat device. The flat device (and thus also the non-flat device) may comprise at least two components and at least one electrical interconnection between two components. In a second aspect, the present disclosure is related to a method of manufacturing a shape-retaining non-flat device by deformation of a flat device, wherein the flat device is attached to a patterned stress relief layer designed in accordance with the first aspect of the present disclosure. In preferred embodiments, the stress relief layer is a thermoplastic layer or a layer comprising a thermoplastic material and deformation of the flat device comprises deformation by a thermoforming process, after attachment of the flat device to the stress relief layer.

Abstract: A transcoder for transcoding a basic representation of a videostream into one or more arbitrary representations comprises: a receiver adapted for receiving the basic representation and at least one frame information set comprising one or more frame information packets; a decoder adapted for decoding the basic representation; a re-encoder adapted for selecting at least one frame information set and for selecting one or more frame information packets from this at least one frame information set for forming a arbitrary representation, the re-encoder is adapted for extracting coding information from the frame information packets, and for re-encoding the decoded basic representation using the coding information thereby obtaining the one or more arbitrary representations.

Abstract: A method for forming a semiconductor device, the method including: providing a substrate with at least one fin or nanowire; forming a dummy gate; providing spacers on the at least one fin or nanowire and the dummy gate; performing a first RMG module wherein high-k material is provided on at least one fin or nanowire, between the spacers; one or more annealing steps; providing a sacrificial plug between the spacers; epitaxially growing a source and drain in the at least one fin or nanowire; removing the sacrificial plug; performing a second RMG module wherein a WFM is deposited between at least part of the spacers such that the WFM is covering the high-k material of the at least one fin or nanowire.

Abstract: An enhancement device (10, 116) for enhancing service requests (120) and a method of allocating network resources to a network service in a communication network is provided. The communication network comprises network resources capable of providing a network service specified in a service request issued by a client. The service request (120) comprises a direct part (121) and an indirect part (122), while the indirect part comprises at least one allocation condition.

Abstract: An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

Abstract: Disclosed herein are microfluidic actuators for selecting objects in a fluid stream comprising a plurality of objects. In some embodiments, the actuator comprises an object detection means adapted for, upon arrival of an object, identifying whether an object is an object of interest. It further comprises a heater adapted for generating a jet flow for deflecting an object of interest from the fluid stream and a controller for activating the heater as function of the detection of an object of interest using a nucleation signal. The controller is adapted for obtaining temperature information of the heater and for adjusting a nucleation signal for the heater taking into account the obtained temperature information. Also disclosed are microfluidic systems and diagnostic devices comprising the microfluidic actuators of the disclosure, as well as methods of use thereof.

Abstract: A communication system includes a base station, at least one remote radio head, and at least one channel. The base station has at least two digital modulators adapted for modulating a first and a second incoming radio signal to obtain a first and a second quantized signal, a multiplexer for interleaving the quantized signals, and a transmitter adapted for transmitting the resulting quantized signal over the channel to the remote radio head. The remote radio head includes a receiver adapted for capturing the quantized signal, a clock extraction module adapted for converting the signal from the receiver into a clock signal, a demultiplexer for splitting the quantized signal using the clock signal to obtain at least two quantized signals, and a filter adapted for removing quantization noise from the quantized signal from the receiver or the demultiplexer.

Abstract: Integrated circuit comprising an interconnection system comprising at least one multilevel layer comprising first parallel electrically conductive lines, the multilevel layer comprising at least three levels forming a centerline level, an upper extension line level, and a lower extension line level the levels providing multilevel routing tracks in which the lines extend.

Abstract: A circuit for facilitating random edge injection locking of an oscillator comprises a clock signal and a digitally controlled delay line, where the digitally controlled delay line is configured to delay the clock signal, thereby generating a delayed clock signal. The circuit further comprises an edge selector configured to generate a phase select signal with a random pulse sequence. Moreover, the circuit comprises a pulse generator downstream to the digitally controlled delay line configured to generate injection pulses from the delayed clock signal for at least two phases of the oscillator based on the phase select signal.

Abstract: A multi-user access node for receiving concurrent signals which are carrying redundant chip sequences at a baseband rate, the access node including: a plurality of antennas organized in an antenna configuration; a main transceiver comprising an analog receiver and an ADC for converting an incoming signal into a digital signal which comprises the incoming chip sequences; a switch for switching the transceiver between the plurality of antennas; a controller configured for: initializing the multi-user access node by switching the transceiver between the plurality of antennas to capture a spatial character of the different users based on unique initialization chip sequences from the different users, separating collided chip sequences transmitted by different users by switching the transceiver between the plurality of antennas according to a scrambling sequence and by using the spatial character in combination with the applied scrambling sequence.

Abstract: A single-photon avalanche diode (SPAD) is disclosed. In one aspect, the SPAD comprises an inner doped region, a geometrical structure of a boundary of the inner doped region rotationally symmetric in a horizontal direction of a substrate; at least one outer doped region connected to a second terminal, the at least one outer doped region arranged to at least partially enclose the inner doped region and the outer doped region comprising dopant implantations of a different type than the inner doped region; a lowly doped depletion volume arranged to surround the inner doped region, a depth of the lowly doped depletion volume extending from the top surface of the substrate into the substrate being larger than a depth of the at least one outer doped region, and when a reverse bias is applied to an anode, an electric field peak around the inner doped region being formed to enable impact ionization and multiplication of charges.

Abstract: A transimpedance amplifier is provided for converting a current between its two input terminals to a voltage over its two output terminals comprising a high-speed level shifter configured for creating a difference in input DC voltage and for being transparent for alternating voltages, an input biasing network configured for reverse biasing a photodiode connected to at least one of the input terminals and transparent for a feedback signal from the feedback network which is differentially and DC-coupled with the output terminals of the voltage amplifier and outputs of the feedback network are differentially and DC-coupled with the input biasing network of which outputs are coupled with inputs of the level shifter which is differentially and DC-coupled with input terminals of the voltage amplifier.

Abstract: A method for forming a buried metal line in a substrate includes forming, at a position between a pair of semiconductor structures protruding from the substrate, a metal line trench in the substrate at a level below a base of each semiconductor structure of the pair. Forming the metal line trench includes etching an upper trench portion in the substrate, forming a spacer on sidewall surfaces of the upper trench portion that expose a bottom surface of the upper trench portion, and, while the spacer masks the sidewall surfaces, etching a lower trench portion by etching the substrate via the upper trench portion such that a width of the lower trench portion exceeds a width of the upper trench portion. The method further includes forming the metal line in the metal line trench.

Abstract: A radio frequency, RF, transmitter, comprises a digitally controlled oscillator, DCO, configured to generate an RF signal; and digital modulation circuitry connected to the DCO for modulation of the RF signal, and driven by an RF clock signal derived from the RF signal, wherein the digital modulation circuitry comprises a module configured to apply a compensation for modulation jitter due to the modulation circuitry being driven by the RF clock signal and a compensation for DCO non-linearity.

Abstract: Disclosed herein are cell differentiating systems for differentiating cells. The systems comprise an input means for receiving a reconstructed image of a cell based on a holographic image of the cell in suspension, and a cell recognition means for determining cell characterization features from the reconstructed image of the cell for characterization of the cell. The cell recognition means thereby is configured for determining, as cell recognition features, image moments.

Abstract: The disclosed technology relates generally to the field of semiconductor devices, and more particularly to co-integration of GaN-based devices with Si-based devices. In one aspect, a method of forming a semiconductor device includes forming a first wafer including, on a front side thereof, a III-V semiconductor layer stack formed on a first substrate and a first bonding layer. The III-V semiconductor layer stack includes a GaN-based device layer structure formed on the first substrate. The method additionally includes, subsequent to forming the first wafer, bonding the first bonding layer to a second bonding layer of a second wafer. The second wafer includes a second silicon substrate supporting an active device layer, a back-end-of-line interconnect structure and the second bonding layer. The method further comprises, subsequent to bonding, thinning the first wafer from a backside, wherein thinning includes removing at least the first substrate.

Abstract: The invention pertains to a method for determining transmission parameters in a wireless local area network operating under a restricted access window scheme, said wireless local area network comprising an access point and a plurality of stations, the method comprising at said access point: estimating (230) respective transmission intervals and next transmission times of said plurality of stations; and assigning (260) a subset of said plurality of stations to a restricted access window group on the basis of said estimated next transmission times. The invention also pertains to a computer program product comprising code means configured to cause a processor to carry out the method and an access point configured to carry out the method.

Abstract: Embodiments relate to a sensor structure for an acoustical pressure sensor and an opto-mechanical sensor and system that may be used for detecting acoustical pressure waves. Embodiments of a sensor structure for an acoustical pressure sensor include an optical waveguide closed-loop resonator and a plurality of sensor elements. The individual sensor elements of the plurality of sensor elements are configured to be affected by an acoustical pressure wave such that a physical property of the individual sensor element is changed. The optical waveguide closed-loop resonator is arranged at the plurality of sensor elements and associated with each of the individual sensor elements such that a resonance frequency of the optical waveguide closed-loop resonator is shifted due to the affected physical properties of all individual sensor elements. The sensor structure provides a high sensitivity from each sensor element, which is advantageous in e.g.

Abstract: Example embodiments relate to microfluidic devices for controlling pneumatic microvalves. One embodiment includes a microfluidic device for independently controlling a plurality of pneumatic microvalves. The microfluidic device is couplable to a pressure source. The microfluidic device includes a first substrate. The microfluidic device also includes a flexible membrane covering the first substrate. Additionally, the microfluidic device includes a second substrate covering the flexible membrane. Further, the microfluidic device includes one or more fluidic channels at least partially defined in the first substrate. In addition, the microfluidic device includes a pressure couplable to the pressure source and branching into a plurality of pressure channels. Still further, the microfluidic device includes at least one pressure control switch per pressure channel.

Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (?LED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.