Abstract: An electronic chip is disclosed. In one example, the electronic chip comprises a substrate comprising a central portion and an edge portion around at least part of the central portion. An active region is arranged in the central portion. A crack guiding structure combined with a crack stop structure is provided, both being arranged in the edge portion.

Abstract: A gas sensing device includes one or more chemo-resistive gas sensors; one or more heat sources, wherein the gas sensors are heated according to one or more first temperature profiles during the recovery phases and according to one or more second temperature profiles during the sense phases; a preprocessing processor for generating preprocessed signal samples; a feature extraction processor for extracting one or more feature values from the received preprocessed signal samples; and a gas concentration processor for creating a sensing result, wherein the gas concentration processor includes a classification processor for outputting a class decision value, wherein the classification processor is configured for outputting a confidence value, wherein the classification processor includes a first trained model based algorithm processor, wherein the gas concentration processor comprises a quantification processor for creating an estimation value, and wherein the quantification processor comprises a second trained m

Abstract: A semiconductor arrangement includes at least two switching devices of a first type electrically coupled in parallel between first and second terminals, and at least two switching devices of a second type electrically coupled in parallel between the second terminal and a third terminal. One first diode is electrically coupled in parallel to each switching device of the first type. One second diode is electrically coupled in parallel to each switching device of the second type. The switching devices are arranged in a power semiconductor module having first and second longitudinal sides and first and second narrow sides. The first type switching devices and first diodes are arranged alternatingly in one row along the first longitudinal side. The second type switching devices and second diodes are arranged alternatingly in another row along the second longitudinal side. An axis of symmetry that extends perpendicular to the first and second narrow sides.

Abstract: A sensor system may include a first magnet arranged such that a position of the first magnet corresponds to a position of a trigger element on a linear trajectory. The sensor system may include a second magnet arranged such that a position of the second magnet corresponds to a selected position of a selection element. The sensor system may include a magnetic sensor to detect a strength of a first magnetic field component, a strength of a second magnetic field component, and a strength of a third magnetic field component. The magnetic sensor may be further to determine the position of the trigger element based on the strength of the first magnetic field component and the strength of the second magnetic field component, and to determine the selected position of the selection element based on the strength of the third magnetic field component.

Abstract: A magnetic field sensor includes a sensor and a processing circuit. The sensor is designed to generate on the basis of a varying magnetic field an oscillation signal that fluctuates around a mean value. The processing circuit is designed to generate an output signal on the basis of the oscillation signal. The processing circuit is designed, in a high-resolution mode different than a low-resolution mode, in each case to generate a mean value crossing pulse in the output signal when the oscillation signal attains the mean value, and to generate in each case a limit value crossing pulse in the output signal when the oscillation signal attains at least one limit value different than the mean value. A pulse width of at least either the mean value crossing pulse or the limit value crossing pulse is set to indicate that the magnetic field sensor is operating in the high-resolution mode.

Abstract: A semiconductor assembly includes a semiconductor package that includes first and second transistor dies embedded within a package body, the first and second transistor dies being arranged laterally side by side within the package body such that a first load terminal of the first transistor die faces an upper surface of the package body and such that a second load terminal of the second transistor die faces the upper surface of the package body, and a discrete capacitor mounted on the semiconductor package such that a first terminal of the discrete capacitor is directly over and electrically connected to the first load terminal of the first semiconductor die and such that a second terminal of the discrete capacitor is directly over and electrically connected with the second load terminal of the second semiconductor die.

Abstract: In accordance with an embodiment, a method of operating a radar system includes receiving radar configuration data from a host, and receiving a start command from the host after receiving the radar configuration data. The radar configuration data includes chirp parameters and frame sequence settings. After receiving the start command, configuring a frequency generation circuit is configured with the chirp parameters and radar frames are triggered at a preselected rate.

Abstract: A method for fabricating packaged semiconductor devices is disclosed. In one example the method comprises providing a plurality of semiconductor dies, the semiconductor dies being arranged in an array on a carrier such that a first side of the semiconductor dies faces the carrier and such that an empty space is arranged laterally besides each semiconductor die. A substrate comprising a plurality of conductive elements is arranged over the plurality of semiconductor dies such that a conductive element is arranged in the respective empty space besides each one of the semiconductor dies. The plurality of semiconductor dies are molded over to form a molded body, and singulating packaged semiconductor devices from the molded body by cutting through the molded body.

Abstract: In accordance with an embodiment, a semiconductor device includes: an n-doped region disposed over an insulating layer; a p-doped region disposed over the insulating layer adjacent to the n-doped region, where an interface between the n-doped region and the p-doped region form a first diode junction; a plurality of segmented p-type anode regions disposed over the insulating layer, each of the plurality of segmented p-type anode regions being surrounded by the n-doped region, where a doping concentration of the plurality of segmented p-type anode regions is greater than a doping concentration of the p-doped region; and a plurality of segmented n-type cathode regions disposed over the insulating layer. Each of the plurality of segmented n-type cathode regions are surrounded by the p-doped region, where a doping concentration of the plurality of segmented n-type cathode regions is greater than a doping concentration of the n-doped region.

Abstract: Implementations relate to a sensor assembly for determining rotation about an axis and linear movement parallel to the axis. The sensor assembly comprises a magnetic structure comprising a north pole radially displaced from the axis and a south pole radially displaced from the axis and opposite to the north pole. The north pole and the south pole of the magnet extend radially into the direction of the axis at an axial end of the sensor assembly. The sensor assembly further comprises at least one sensor element sensitive to magnetic fields radially between the north pole and the south pole.

Abstract: A magnetic sensor system includes a toothed wheel configured to rotate about a rotation axis that extends in an axial direction, wherein the toothed wheel includes a plurality of teeth and a plurality of notches arranged that define a circumferential perimeter, wherein the toothed wheel further includes an interior cavity arranged within the circumferential perimeter; a front-bias magnet arranged within the interior cavity of the toothed wheel, wherein the front-bias magnet is rotationally fixed and is magnetized with a magnetization direction that extends along a radial axis of the toothed wheel; and a magnetic sensor arranged exterior to the toothed wheel, wherein the magnetic sensor includes a sensor element arranged on the radial axis that coincides with the magnetization direction of the front-bias magnet and the first sensor element is sensitive to a magnetic field of the front-bias magnet that is aligned with the radial axis.

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

Abstract: An imaging system includes an illumination element for emitting light and an imaging sensor having at least one photo-sensitive element that includes a first element with a modifiable first charge level and a second element with a modifiable second charge level. Control circuitry is configured to, during a first phase, control the illumination element to emit light towards a scene and drive the photo-sensitive element such that charge carriers generated in the photo-sensitive element by light received from the scene modify the first charge level. The control circuitry is configured to, during a second phase, control the illumination element to pause emission of the light and drive the photo-sensitive element such that charge carriers generated in the photo-sensitive element by light received modify the second charge level, and to generate a gray-scale image of the scene based on the first and second charge levels.

Abstract: A combined MicroElectroMechanical structure (MEMS) includes a first piezoelectric membrane having one or more first electrodes, the first piezoelectric membrane being affixed between a first holder and a second holder; and a second piezoelectric membrane having an inertial mass and one or more second electrodes, the second piezoelectric membrane being affixed between the second holder and a third holder.

Abstract: In an example, for manufacturing a semiconductor device, first dopants are implanted through a first surface section of a first surface of a silicon carbide body. A trench is formed that extends from the first surface into the silicon carbide body. The trench includes a first sidewall surface and an opposite second sidewall surface. A spacer mask is formed. The spacer mask covers at least the first sidewall surface. Second dopants are implanted through a portion of a bottom surface of the trench exposed by the spacer mask. The first dopants and the second dopants have a same conductivity type. The first dopants and the second dopants are activated. The first dopants form a doped top shielding region adjoining the second sidewall surface. The second dopants form a doped buried shielding region adjoining the bottom surface.

Abstract: A method to secure boot an electronic device is disclosed according to some embodiments. The method includes receiving a request to initiate a boot sequence using memory content stored in a non-volatile memory circuit. A secure boot circuit receives verification data from the non-volatile memory circuit indicating the memory content. The verification data includes an error correction code for the memory content without including all of the memory content. A cryptographic hashing operation is performed to the error correction code in the secure boot circuit to obtain a digest of the error correction code. The digest is compared with a pre-stored reference digest to generate a verification signal. The verification signal is provided to the electronic device indicating whether the boot sequence passes the verification.

Abstract: An analog-to-digital converter (ADC) includes a first controlled oscillator (CO) for generating at least one phase signal, and wherein the at least one phase signal generates a first output signal of the ADC; and at least one first frequency-controlled resistor (FDR) for receiving the at least one phase signal generated by the first CO, wherein the first CO and the at least one first FDR are coupled together at a first subtraction node of the ADC, and wherein the first subtraction node receives a first input signal.

Abstract: A method of synchronizing a first oscillation about a first axis with a second oscillation about a second axis includes: generating a first position signal that indicates a position of the first oscillation about the first axis; generating a second position signal that indicates a position of the second oscillation about the first axis; determining a phase difference between the first and the second position signals; comparing the phase difference to a threshold value to generate a comparison result; generating a first reference signal having a first frequency and a second reference signal having a second frequency; synchronizing the first oscillation to the first frequency and synchronizing the second oscillation to the second frequency; monitoring the comparison result; and synchronously triggering a start of the first reference signal and the second reference signal responsive to the comparison result indicating that the phase difference is less than the threshold value.

Abstract: In an embodiment, a method includes: generating a displacement signal indicative of a distension of a surface of a skin; determining a temperature of the skin using a temperature sensor; during a calibration time interval, collecting a plurality of distension values from the displacement signal, the plurality of distension values associated with a respective plurality of temperature values determined using the temperature sensor, the plurality of temperature values being indicative of a temperature change of the skin; determining compensation coefficients associated with the plurality of temperature values; and after the calibration time interval, collecting a first distension value from the displacement signal, determining a first temperature value using the temperature sensor, and determining a blood pressure based on the first distension value, the first temperature value, and the determined compensation coefficients.

Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.