Patents Assigned to Infineon Technologies AG
  • Patent number: 10345227
    Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Ventsislav Lavchiev, Thomas Grille, Ursula Hedenig, Bernhard Jakoby
  • Patent number: 10347554
    Abstract: An electronic component which comprises an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating at least part of at least one of the carrier and the electronic chip, and a functional structure covering a surface portion of the encapsulant, wherein at least part of the covered surface portion of the encapsulant is spatially selectively roughened.
    Type: Grant
    Filed: March 19, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Norbert Joson Santos, Edward Fuergut, Sanjay Kumar Murugan
  • Patent number: 10347778
    Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Heiko Froehlich, Maik Stegemann, Mirko Vogt
  • Patent number: 10348185
    Abstract: A method for sensing an output current of a Direct Current-to-Direct Current (DC/DC) converter having an external power stage configured to supply a converted current to an external inductor. During a calibration phase at a first start-up of the DC/DC converter: the method includes injecting a calibration current through a switching node of the power stage and through the inductor; and determining a calibration gain of the DC/DC converter to compensate for DC Resistance (DCR) variation by comparing a gain-adjusted voltage across the inductor with a reference voltage. During a measurement phase, the method includes reducing ripple voltage of a switching voltage at the switching node to generate a ripple-reduced switching voltage; and sensing the output current based on a DCR-compensated voltage across the inductor, which is a difference between the ripple-reduced switching voltage and an output voltage of the DC/DC converter with compensation for the DCR variation based on the calibration gain.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventor: Vratislav Michal
  • Patent number: 10347754
    Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Max Christian Seifert, Antonio Vellei
  • Patent number: 10348326
    Abstract: In accordance with an embodiment, a digital microphone interface circuit includes a delta-sigma analog-to-digital converter (ADC) having an input configured to be coupled to a microphone, a digital lowpass filter coupled to an output of the delta-sigma ADC, and a digital sigma-delta modulator coupled to an output of the digital lowpass filter. The delta-sigma ADC, the digital lowpass filter, and the digital sigma-delta modulator are configured to operate at different sampling frequencies.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Elmar Bach, Dietmar Straeussnigg, Luca Valli
  • Patent number: 10347814
    Abstract: According to various embodiments, a MEMS device includes a substrate, an electrically movable heating element having a first node coupled to a first terminal of a first voltage source and the second node coupled to a reference voltage source, a first anchor anchoring the first node and a second anchor anchoring the second node of the electrically movable heating element to the substrate, and a cavity between the first anchor and the second anchor and between the electrically movable heating element and the substrate.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: July 9, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Christoph Glacer
  • Patent number: 10348417
    Abstract: A sensor system with a sensor device communicatively coupled to a sensor bus to a receiver circuitry or processing component increases the data rate of sensor transmissions based on the sensor communication protocol. The sensor device can be a short pulse width modulation (PWM) code (SPC) protocol or a single edge nibble transmission (SENT) protocol. A first plurality of sensor values can be configured based on a first communication scheme and a second plurality of sensor values based on a second communication scheme of the communication protocol within a sensor transmission. An indication of modifications of the sensor communication protocol can further be provided via the transmission to sensor bus and processed accordingly by the receiver or processing circuitry of the sensor bus.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Christoph Krall, Dirk Hammerschmidt, Michael Strasser
  • Patent number: 10348430
    Abstract: A sensor may determine a sampling pattern based on a group of synchronization signals received by the sensor. The sampling pattern may identify an expected time for receiving an upcoming synchronization signal. The sensor may trigger, based on the sampling pattern, a performance of a sensor operation associated with the upcoming synchronization signal. The performance of the sensor operation may be triggered before the upcoming synchronization signal is received.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventor: Leo Aichriedler
  • Patent number: 10348199
    Abstract: A method and apparatus for controlling a step-down converter, including setting an on-state time (TON) to a default TON; switching, when an output voltage of the step-down converter falls below a reference output voltage, the step-down converter to an on-state for a duration of the TON; and switching, at the end of the TON, the step-down converter to an off-state for a minimum off-state time (TOFF).
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: July 9, 2019
    Assignee: Infineon Technologies AG
    Inventors: Matteo Agostinelli, Francesco Santoro
  • Publication number: 20190204063
    Abstract: A magnetic angle sensor device and a method for operating such device is provided. The magnetic angle sensor device includes a shaft rotatable around a rotation axis; a magnetic arrangement coupled to the shaft, where the magnetic arrangement produces a differential magnetic field comprising a plurality of diametric magnetic fields; a first magnetic angle sensor provided in the differential magnetic field and configured to generate a first signal that represents a first angle based on a first diametric magnetic field of the differential magnetic field; a second magnetic angle sensor provided in the differential magnetic field and configured to generate a second signal that represents a second angle based on a second diametric magnetic field of the differential magnetic field; and a combining circuit configured to determine a combined rotation angle based on the first signal and on the second signal.
    Type: Application
    Filed: March 6, 2019
    Publication date: July 4, 2019
    Applicant: Infineon Technologies AG
    Inventors: Udo AUSSERLECHNER, Wolfgang GRANIG
  • Publication number: 20190202248
    Abstract: Embodiments provide a fail-safe device, a tire pressure measurement system, a vehicle, a tire, a method and a computer program for monitoring a first sensor of a tire pressure monitoring system. The fail-safe device includes a first input for a first signal from the first sensor. The first signal indicates a first physical quantity. The fail-safe device includes a second input for a second signal from a second sensor. The second signal indicates a second physical quantity. The fail-safe device further includes a control module to verify the first signal based on the second signal and a physical relation between the first and the second physical quantities.
    Type: Application
    Filed: March 7, 2019
    Publication date: July 4, 2019
    Applicant: Infineon Technologies AG
    Inventors: Michael KANDLER, Thomas LANGE, Jooil PARK
  • Patent number: 10338158
    Abstract: A bias magnetic field sensor is disclosed. In an embodiment, a bias magnetic field sensor includes a magnetic field sensor package having a magnetic body attached to only a single side of the sensor package, wherein the magnetic body is configured to provide a magnetic field, and wherein the sensor package is configured to measure a modulation of the magnetic field by a generator object.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: July 2, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Tobias Werth, Robert Hermann, Udo Ausserlechner, Helmut Koeck, Frank Heinrichs
  • Patent number: 10337888
    Abstract: A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventors: Franz Jost, Harald Witschnig, Juergen Zimmer
  • Patent number: 10338665
    Abstract: A microcontroller that can be configured to selectively operate in a synchronous mode or an asynchronous mode, and a method of selectively switching the operating mode is described. The microcontroller can include a processor and a system controller. The processor can be configured to operate synchronously in a synchronous operating mode and asynchronously in an asynchronous operating mode. The processor can also be configured to generate a processor idle status signal indicative of the processor operating in a reduced power mode, and generate a programming signal. The system controller can be configured to generate an asynchronous mode signal based on the programming signal and the processor idle status signal, and provide the asynchronous mode signal to the processor to control the processor to selectively operate in the synchronous operating mode and in the asynchronous operating mode.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventor: Prakash Kalanjeri Balasubramanian
  • Patent number: 10340864
    Abstract: In various embodiments, a method for controlling the operation of a transmitter circuit is provided, the method including: detecting a state of a message field within a data message to be sent by the transmitter circuit indicating a bit rate to be used for transmission by the transmitter circuit and switching the mode of operation of the transmitter circuit from a first data transmission mode to a second data transmission mode depending on the state of the message indication field, wherein in the first data transmission mode a first circuit configured to transmit data may be used and wherein in the second data transmission mode a second circuit configured to transmit data may be used. Further, a corresponding controlling circuit is provided.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventor: Magnus-Maria Hell
  • Patent number: 10337117
    Abstract: A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventors: Nico Caspary, Hans-Joachim Schulze
  • Patent number: 10336607
    Abstract: A membrane component comprises a membrane structure comprising an electrically conductive membrane layer. The electrically conductive membrane layer has a suspension region and a membrane region. In addition, the suspension region of the electrically conductive membrane layer is arranged on an insulation layer. Furthermore, the insulation layer is arranged on a carrier substrate. Moreover, the membrane component comprises a counterelectrode structure. A cavity is arranged vertically between the counterelectrode structure and the membrane region of the electrically conductive membrane layer. In addition, an edge of the electrically conductive membrane layer projects laterally beyond an edge of the insulation layer by more than half of a vertical distance between the electrically conductive membrane layer and the counterelectrode structure.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: July 2, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Alfons Dehe
  • Patent number: 10340335
    Abstract: A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventors: Reinhard Ploss, Hans-Joachim Schulze
  • Patent number: 10340334
    Abstract: In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ??100 Ohm.cm, a front surface and a rear surface. An LDMOS transistor is arranged in the semiconductor substrate. A RESURF structure including a doped buried layer is arranged in the semiconductor substrate. The LDMOS transistor includes a body contact region doped with a first conductivity type, and a source region disposed in the body contact region and doped with a second conductivity type opposite the first conductivity type. The source region includes a first well and a second well of the same second conductivity type. The first well is more highly doped than the second well. The first well extends from inside the body contact region to outside of a lateral extent of the body contact region in a direction towards a source side of a gate of the LDMOS transistor.
    Type: Grant
    Filed: May 23, 2018
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventors: Albert Birner, Helmut Brech, Matthias Zigldrum, Michaela Braun, Christian Eckl