Patents Assigned to Infineon Technologies AG
  • Patent number: 11378614
    Abstract: This disclosure is directed to circuits and techniques for detecting or responding to temperature of a power switch. A driver circuit for the power switch may be configured to deliver a modulation signal to a control node of the power switch to control on/off switching of the power switch, wherein the driver circuit is further configured to modulate an output impedance of the driver circuit at the control node, perform one or more voltage measurements while modulating the output impedance of the driver circuit, and control the power switch based at least in part on the one or more voltage measurements.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: July 5, 2022
    Assignee: Infineon Technologies AG
    Inventors: Jens Barrenscheen, Andre Arens
  • Patent number: 11378536
    Abstract: A method for producing a nanofilm includes providing a microsieve having a first and a second opposite surface region, wherein micropores are formed between the first and second surface regions; applying a nanomaterial suspension on the first surface region of the microsieve, wherein the nanomaterial suspension comprises nanomaterial particles; and creating a pressure difference at a plurality of the micropores between the first and second surface region of the microsieve in order to move the nanomaterial suspension into the micropores and/or through the micropores, such that the nanomaterial particles adhere to the first surface region and to the wall regions of the micropores and form the nanofilm.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: July 5, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Derek Debie, Alexander Zoepfl
  • Patent number: 11380756
    Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: July 5, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Caspar Leendertz, Rudolf Elpelt, Romain Esteve, Thomas Ganner, Jens Peter Konrath, Larissa Wehrhahn-Kilian
  • Patent number: 11373857
    Abstract: One or more semiconductor manufacturing methods and/or semiconductor arrangements are provided. In an embodiment, a silicon carbide (SiC) layer is provided. The SiC layer has a first portion overlying a second portion. The first portion has a first side distal the second portion and a second side proximal the second portion. The first portion is converted into a porous layer overlying the second portion. The porous layer has a first side distal the second portion and a second side proximal the second portion. The porous layer is removed to expose a first side of the second portion. After removing the porous layer, the first side of the second portion has a surface roughness less than a surface roughness of the first side of the first portion and/or less than a surface roughness of the first side of the porous layer.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: June 28, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Bernhard Goller, Iris Moder, Petra Fischer
  • Patent number: 11372054
    Abstract: A device for battery impedance measurement includes a switched capacitor network, a controller configured to operate the switched capacitor network to cause an alternating current to flow between a battery and an energy storage; and measurement circuitry configured to measure the alternating current flowing to or from the battery and a voltage across the battery.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: June 28, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Stefano Marsili, Klaus Hoermaier, Akshay Misra, Filippo Rosetti
  • Patent number: 11373863
    Abstract: A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: June 28, 2022
    Assignee: Infineon Technologies AG
    Inventors: Roland Rupp, Mihai Draghici, Tobias Franz Wolfgang Hoechbauer, Wolfgang Lehnert, Matteo Piccin
  • Patent number: 11374740
    Abstract: A bus-based communication system, may include a communication bus connecting a plurality of nodes. A first node, of the plurality of nodes, may receive a first message on the communication bus, the first message having been broadcast on the communication bus by a second node of the plurality of nodes. The first message may include a modular exponentiation associated with a private key of the second node. The first node may compute a shared secret key, associated with the plurality of nodes, based at least in part on the modular exponentiation and a private key of the first node.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: June 28, 2022
    Assignee: Infineon Technologies AG
    Inventors: Alexander Zeh, Anjana Ramamoorthy
  • Patent number: 11374758
    Abstract: A transceiver is disclosed including a transmitter designed to output a first signal according to a physical communication protocol, and to output a second signal comprising at least one cryptographic datum. The first and the second signal may be overlaid onto one another as an overlay signal at the output of the transceiver, and may comply with the physical communication protocol. The overlay signal may be received and processed by a receiver.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: June 28, 2022
    Assignee: Infineon Technologies AG
    Inventors: Alexander Zeh, Vivin Richards Allimuthu Elavarasu, Eric Pihet
  • Patent number: 11371824
    Abstract: The described techniques address the issues associated with conventional OoS sensor systems by mounting a magnetized ring onto a rotatable shaft for which an angular position is to be measured. Specific sensor configurations are disclosed regarding each magnetic sensor's position with respect to one another and each magnetic sensor's position with respect to the rotatable shaft. The described configurations provide a stray-field robust solution due to the specific magnetic sensor configurations such that, when stray fields are present, pairs of magnetic sensors are exposed to essentially the same stray field components, which thus cancel one another. Thus, the angle of the rotatable shaft as a function of the measured strength of the magnetic field components at any time instant can be calculated even in the present of stray magnetic fields.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: June 28, 2022
    Assignee: Infineon Technologies AG
    Inventors: Gernot Binder, Benjamin Kollmitzer, Peter Slama
  • Patent number: 11373944
    Abstract: A die package and method is disclosed. In one example, the die package includes a die having a first die contact on a first side and a second die contact on a second side opposite the first side, and insulating material laterally adjacent to the die. A metal structure substantially directly contacts the surface of the second die contact, wherein the metal structure is made of the same material as the second die contact. A first pad contact on the first side of the die electrically contacts the first die contact, and a second pad contact on the first side of the die electrically contacts the second die contact via the metal structure. The insulating material electrically insulates the metal structure from the first die contact.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: June 28, 2022
    Assignee: Infineon Technologies AG
    Inventor: Petteri Palm
  • Publication number: 20220201264
    Abstract: An image projection system includes a first transmitter configured transmit pixel light pulses along a transmission path to be projected onto an eye to render a projection image thereon; a second transmitter configured to generate infrared (IR) light pulses transmitted along the transmission path to be projected onto the eye and reflected back therefrom as reflected IR light pulses on a reception path; a coaxial scanning system arranged along the transmission and reception paths; an eye-tracking sensor configured to generate a retina image of the eye based on reflected IR light pulses, and process the retina image to determine a fovea region location of the eye; and a system controller configured to render the projection image based on the fovea region location, wherein the projection image is rendered with a higher resolution in the fovea region and is rendered with a lower resolution outside of the fovea region.
    Type: Application
    Filed: December 21, 2020
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventor: Boris KIRILLOV
  • Publication number: 20220196434
    Abstract: The present disclosure relates to an apparatus for position detection, including a multipole magnet with pole pairs extending along a multipole extension direction, a magnetoresistive sensor including a first sensor bridge sensitive for a first in-plane magnetic field component and a second sensor bridge sensitive for a second in-plane magnetic field component, wherein the first sensor bridge and the second sensor bridge are arranged in-plane and are spaced apart along a sensor axis, wherein the multipole extension direction and the sensor axis are rotated by a rotation angle larger than 20° and less than 70° to each other.
    Type: Application
    Filed: December 6, 2021
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventors: Joo ll PARK, Dirk HAMMERSCHMIDT, Hyun Jeong KIM
  • Publication number: 20220199481
    Abstract: A circuit arrangement has a chip arrangement in the form of an embedded Wafer Level Ball Grid Array (eWLB) arrangement with solder contacts on one side and a thermal interface on a side of the chip arrangement facing away from the solder contacts which is designed to dissipate heat from the semiconductor chip. In examples, the thermal interface has a thermally and electrically conductive material, wherein in a top view of the chip arrangement, a contact area in which the thermally and electrically conductive material is in thermal contact with the chip arrangement is limited to the fan-out area. In examples, the thermal interface has at least one RF absorption layer which is designed to absorb electromagnetic radiation at an operating frequency of the semiconductor chip.
    Type: Application
    Filed: December 6, 2021
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventors: Raphael HELLWIG, Philip AMOS, Walter HARTNER
  • Publication number: 20220196796
    Abstract: A radio frequency (RF) system includes a radar monolithic microwave integrated circuit (MIMIC), which includes: a phase detector including a test input port, and a monitoring input port, wherein the phase detector is configured to generate an output signal that represents a phase difference between a test signal received at the test input port and a monitoring signal received at the monitoring input port; a test signal path including at least one active component, the test signal path configured to receive a local oscillator signal and provide the local oscillator signal as the test signal to the test input port during a first measurement interval; and a passive signal path configured to receive the local oscillator signal and provide the local oscillator signal to the monitoring input port as the monitoring signal during the first measurement interval.
    Type: Application
    Filed: December 21, 2020
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventor: Vincenzo FIORE
  • Publication number: 20220197015
    Abstract: An oscillator system includes an oscillator structure configured to oscillate about a first axis according to a first oscillation and oscillate about a second axis according to a second oscillation; a first driver configured to drive the first oscillation, detect first zero-crossing events of the first mirror, and generate a first position signal based on the detected first zero-crossing events; a second driver configured to drive the second oscillation, detect second zero-crossing events of the second mirror, and generate a second position signal based on the detected second zero-crossing events; and a synchronization controller configured to receive the first and the second position signals, and synchronize at least one of a phase or a frequency of the second oscillation with at least one of a phase or a frequency of the first oscillation, respectively, based on the first and the second position signals.
    Type: Application
    Filed: March 9, 2022
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventors: Norbert DRUML, Philipp GREINER, Boris KIRILLOV, Ievgeniia MAKSYMOVA, Maksym SLADKOV, Hendrikus VAN LIEROP
  • Publication number: 20220196379
    Abstract: An exemplary embodiment relates to a device for training a neural network for determining a rotation angle of an object. The device is configured to receive system data via a sensor system for measuring a magnetic field in order to determine the rotation angle. The device is also configured to generate error data which includes at least one deviation of the system data from a target state of the sensor system or the strength of the components of a superimposed external magnetic field. Furthermore, the device is configured to create training data using the system data and the error data and to train the neural network using the training data.
    Type: Application
    Filed: December 14, 2021
    Publication date: June 23, 2022
    Applicant: Infineon Technologies AG
    Inventors: Richard HEINZ, Andrea HEINZ, Stephan LEISENHEIMER
  • Patent number: 11366199
    Abstract: A method for a radar system is described. In accordance with one example implementation, the method comprises generating a frequency-modulated RF oscillator signal and feeding the RF oscillator signal to a first transmitting channel and a second transmitting channel. The method further comprises generating a first RF transmission signal in the first transmitting channel based on the RF oscillator signal, emitting the first RF transmission signal via a first transmitting antenna, receiving a first RF radar signal via a receiving antenna, and converting the first RF radar signal to a baseband, as a result of which a first baseband signal is obtained, which has a first signal component having a first frequency and a first phase, where the first signal component is assignable to direct crosstalk from the first transmitting antenna. This procedure is repeated for the second transmitting channel.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: June 21, 2022
    Assignee: Infineon Technologies AG
    Inventors: Oliver Lang, Michael Gerstmair, Alexander Melzer, Alexander Onic, Christian Schmid
  • Patent number: 11367683
    Abstract: A silicon carbide device includes a silicon carbide substrate, a contact layer including nickel, silicon and aluminum, a barrier layer structure including titanium and tungsten, and a metallization layer including copper. The contact layer is located on the silicon carbide substrate. The contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure. The barrier layer structure is located between the silicon carbide substrate and the metallization layer.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: June 21, 2022
    Assignee: Infineon Technologies AG
    Inventors: Edward Fuergut, Ravi Keshav Joshi, Ralf Siemieniec, Thomas Basler, Martin Gruber, Jochen Hilsenbeck, Dethard Peters, Roland Rupp, Wolfgang Scholz
  • Patent number: 11367775
    Abstract: A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate below and adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: June 21, 2022
    Assignee: Infineon Technologies AG
    Inventors: Michael Hell, Rudolf Elpelt, Caspar Leendertz
  • Patent number: 11366198
    Abstract: A method for processing a radar signal includes adjusting a processing clock signal, wherein the processing clock signal determines an operation period of a signal processing circuit, wherein the processing clock signal is determined based on a time window, wherein the size of the time window is determined based on the maximum time available for processing a portion of the radar signal and wherein the end of the time window is determined such that it does not occur during an active transmission portion of the radar system.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: June 21, 2022
    Assignee: Infineon Technologies AG
    Inventors: Markus Bichl, Ljudmil Anastasov, Romain Ygnace