Abstract: A semiconductor device includes: a semiconductor body; an electrical device formed in an active region of the semiconductor body, the active region including an interface between the semiconductor body and an insulating material; and a sensor having a bandwidth tuned to at least part of an energy spectrum of light emitted by carrier recombination at the interface when the electrical device is driven between accumulation and inversion, wherein an intensity of the emitted light is proportional to a density of charge trapping states at the interface, wherein the sensor is configured to output a signal that is proportional to the intensity of the sensed light. Corresponding methods of monitoring and characterizing the semiconductor device and a test apparatus are also described.

Abstract: A method of manufacturing a module is disclosed. In one example, the method comprises providing at least one solder body with a base portion and an elevated edge extending along at least part of a circumference of the base portion. At least one carrier, on which at least one electronic component is mounted, is placed in the at least one solder body so that the at least one carrier is positioned on the base portion and is spatially confined by the elevated edge.

Abstract: A circuit for controlling a motor that includes control circuitry configured to determine whether a commutation event has occurred for a first sector of a plurality of sectors of a cycle for the motor based on a first selected phase current signal and a second selected phase current signal. In response to a determination that the commutation event has occurred for the first sector, the control circuitry is configured to determine that the motor is operating in a second sector of the plurality of sectors of the cycle for the motor. The control circuitry is further configured to determine a second angle of stator voltage vector for the motor based on the determination that the motor is operating in the second sector and generate the control signal based on the second angle of stator voltage vector for the motor.

Abstract: An overvoltage protection device includes first and second semiconductor devices arranged in an anti-serial configuration with a conductive link connected between the first and second semiconductor devices at a central node of the overvoltage protection device, a first terminal connection to a terminal of the first semiconductor device that is opposite from the central node, a second terminal connection to a terminal of the second semiconductor device that is opposite from the central node. A total capacitance of elements in a first transmission path that is between the first terminal connection and the central node substantially matches a total capacitance of elements in a second transmission path that is between the second terminal connection and the central node. The total capacitance of elements in the second transmission path includes a self-capacitance of the conductive link.

Abstract: A triple-membrane MEMS device includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, a sealed low pressure chamber between the first membrane and the third membrane, a first stator and a second stator in the sealed low pressure chamber, and a signal processing circuit configured to read-out output signals of the triple-membrane MEMS device.

Abstract: A circuitry is provided. The circuitry may include a power stage including a first transistor and a second transistor, an encapsulation including encapsulation material encapsulating the power stage, wherein the first transistor and the second transistor are arranged in an L-shape with respect to each other along their long axes, and a passive electronic component arranged on or embedded within the encapsulation at least partially, in top view, within a rectangular area defined by the L-shape configuration and further next to the first transistor and next to the second transistor.

Abstract: A baseplate for a semiconductor module comprises at least one elevation. The at least one elevation is formed integrally with the baseplate. The baseplate has a uniform first thickness or a thickness which decreases continuously from the edge regions toward the center and which is increased locally up to a maximum second thickness in the region of each of the at least one elevation.

Abstract: A power electronics module includes at least one first substrate having on a first side one or more first semiconductor dies, the one or more first semiconductor dies and the at least one first substrate providing a higher power part of the power electronics module, at least one second substrate having on a first side one or more second semiconductor dies, the one or more second semiconductor dies and the at least one second substrate providing a lower power part of the power electronics module, and a common frame at least partially encasing the first and second substrates and being a monobloc part, the higher power part being configured for direct liquid cooling and the lower power part being configured for indirect cooling.

Abstract: A touch sensor includes a touch structure; a signal generator configured to generate an excitation signal; a transmitter configured to receive the excitation signal and transmit an ultrasonic transmit wave towards the touch structure based on the excitation signal; a receiver configured to receive an ultrasonic reflected wave produced by a reflection of the ultrasonic transmit wave at the touch structure, wherein the transmitter and the receiver are coupled by a capacitive path, the receiver is configured to be influenced by the excitation signal whereby the excitation signal induces a capacitive cross-talk on the capacitive path, and the receiver is configured to generate a measurement signal representative of the capacitive cross-talk; and a measurement circuit coupled to the receiver and configured to perform a comparison of the measurement signal with a threshold to determine whether a no-touch event or a touch event has occurred at the touch interface.

Abstract: A power semiconductor module arrangement includes a power electronics substrate comprising a first DC voltage pad, a second DC voltage pad, a first load pad, and a second load pad, first and second transistor dies mounted on the first load pad, third and fourth transistor dies mounted the first DC voltage pad, the first and second transistor dies collectively form a first switch, the third and fourth transistor dies collectively form a second switch, the first and second DC voltage pads are arranged such that a DC supply impedance for a first commutation loop that flows through the first and third transistor dies matches a DC supply impedance for a second commutation loop that flows through the second and fourth transistor dies, and an impedance of a first load connection to the third transistor die is greater than an impedance of a second load connection to the fourth transistor die.

Abstract: A regulated charge pump includes a comparator having a first input coupled to an output of the regulated charge pump, a second input configured for receiving a reference voltage, and an output for generating an output voltage representing a difference between a charging current of the regulated charge pump and a load current of a load coupled to the output of the regulated charge pump; a first converter having an input coupled to the output of the comparator, and an output connected to a control bus configured to indicate an adjustment of the charging current in response to the comparator output; and a driving stage having a first input coupled to the control bus, and an output for providing the charging current, wherein the output of the driving stage comprises the output of the regulated charge pump.

Abstract: A capacitive sensor includes a first electrode structure; a second electrode structure that is counter to the first electrode structure, wherein the second electrode structure is movable relative to the first electrode structure and is capacitively coupled to the first electrode structure to form a capacitor having a capacitance that changes with a change in a distance between the first electrode structure and second electrode structure; a signal generator configured to apply an electrical signal at an input or at an output of the capacitor to induce a voltage transient response at the output of capacitor; and a diagnostic circuit configured to detect a fault in the capacitive sensor by measuring a time constant of the first voltage transient response and detecting the fault based on the time constant and based on whether the first electrical signal is the pull-in signal or the non-pull-in signal.

Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.

Abstract: In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.

Abstract: A molded semiconductor package includes: a semiconductor die embedded in a mold compound; a first heat spreader partly embedded in the mold compound and thermally coupled to a first side of the semiconductor die; and a second heat spreader partly embedded in the mold compound and thermally coupled to a second side of the semiconductor die opposite the first side. The first heat spreader includes at least one heat dissipative structure protruding from a side of the first heat spreader uncovered by the mold compound and facing away from the semiconductor die. The mold compound is configured to channel a fluid over the at least one heat dissipative structure in a direction parallel to the first side of the power semiconductor die. Corresponding methods of production and electronic assemblies are also described.

Abstract: A semiconductor device includes: a silicon carbide semiconductor body having a source region of a first conductivity type and a body region of a second conductivity type; and a trench structure extending from a first surface into the silicon carbide semiconductor body along a vertical direction, the trench structure having a gate electrode and a gate dielectric. The trench structure is stripe-shaped and runs along a longitudinal direction that is perpendicular to the vertical direction. The source region includes a first source sub-region and a second source sub-region alternately arranged along the longitudinal direction. A doping concentration profile of the first source sub-region along the vertical direction differs from a doping concentration profile of the second source sub-region along the vertical direction. A corresponding method of manufacturing the semiconductor device is also described.

Abstract: In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode, a passivation layer arranged on the first major surface and a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer. The field plate is laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode.

Abstract: In accordance with an embodiment, a circuit includes: a first super source follower; a compensation circuit having a compensating node configured to provide a voltage of opposite phase of a voltage of an internal node of the first super source follower; and a first compensation capacitor coupled between an input of the first super source follower and the compensating node of the compensation circuit.

Abstract: A method includes detecting a voltage at a configuration terminal of a mobile industry processor interface (MIPI) radio frequency front end (RFFE) device with a timing based on a MIPI RFFE signal received by the MIPI RFFE device, and setting an address for the MIPI RFFE device based on the detected voltage.

Abstract: In accordance with an embodiment, a gas-sensitive device includes a substrate structure, and a gas sensitive capacitor. The gas sensitive capacitor a first capacitor electrode in form of a gas-sensitive layer on a first main surface region of an insulation layer, and a second capacitor electrode in form of a buried conductive region below the insulation layer, so that the insulation layer is arranged between the first and second capacitor electrode. The gas-sensitive layer comprises a sheet impedance which changes in response to the adsorption or desorption of gas molecules.