Patents Assigned to Infineon Technologies AG
  • Patent number: 11926521
    Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: March 12, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Stephan Pindl, Carsten Ahrens, Stefan Jost, Ulrich Krumbein, Matthias Reinwald
  • Patent number: 11927645
    Abstract: A capacitive sensor includes a first electrode structure; a second electrode structure that is counter to the first electrode structure, wherein the second electrode structure is movable relative to the first electrode structure and is capacitively coupled to the first electrode structure to form a capacitor having a capacitance that changes with a change in a distance between the first electrode structure and second electrode structure; a signal generator configured to apply an electrical signal at an input or at an output of the capacitor to induce a voltage transient response at the output of capacitor; and a diagnostic circuit configured to detect a fault in the capacitive sensor by measuring a time constant of the first voltage transient response and detecting the fault based on the time constant and based on whether the first electrical signal is the pull-in signal or the non-pull-in signal.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Dan-Ioan-Dumitru Stoica, Cesare Buffa, Alessandro Caspani, Constantin Crisu, Victor Popescu-Stroe, Bernhard Winkler
  • Patent number: 11929298
    Abstract: A molded semiconductor package includes: a semiconductor die embedded in a mold compound; a first heat spreader partly embedded in the mold compound and thermally coupled to a first side of the semiconductor die; and a second heat spreader partly embedded in the mold compound and thermally coupled to a second side of the semiconductor die opposite the first side. The first heat spreader includes at least one heat dissipative structure protruding from a side of the first heat spreader uncovered by the mold compound and facing away from the semiconductor die. The mold compound is configured to channel a fluid over the at least one heat dissipative structure in a direction parallel to the first side of the power semiconductor die. Corresponding methods of production and electronic assemblies are also described.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Jo Ean Joanna Chye, Edward Fuergut, Ralf Otremba
  • Patent number: 11929305
    Abstract: In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.
    Type: Grant
    Filed: November 22, 2021
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Andre Schmenn, Klaus Diefenbeck, Joost Adriaan Willemen
  • Patent number: 11929405
    Abstract: In an embodiment, a Group III nitride-based transistor device includes a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode, a passivation layer arranged on the first major surface and a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer. The field plate is laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Albert Birner, Helmut Brech, John Twynam
  • Patent number: 11929397
    Abstract: A semiconductor device includes: a silicon carbide semiconductor body having a source region of a first conductivity type and a body region of a second conductivity type; and a trench structure extending from a first surface into the silicon carbide semiconductor body along a vertical direction, the trench structure having a gate electrode and a gate dielectric. The trench structure is stripe-shaped and runs along a longitudinal direction that is perpendicular to the vertical direction. The source region includes a first source sub-region and a second source sub-region alternately arranged along the longitudinal direction. A doping concentration profile of the first source sub-region along the vertical direction differs from a doping concentration profile of the second source sub-region along the vertical direction. A corresponding method of manufacturing the semiconductor device is also described.
    Type: Grant
    Filed: January 25, 2022
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Thomas Basler, Caspar Leendertz, Hans-Joachim Schulze
  • Patent number: 11929719
    Abstract: In accordance with an embodiment, a circuit includes: a first super source follower; a compensation circuit having a compensating node configured to provide a voltage of opposite phase of a voltage of an internal node of the first super source follower; and a first compensation capacitor coupled between an input of the first super source follower and the compensating node of the compensation circuit.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: March 12, 2024
    Assignee: Infineon Technologies AG
    Inventors: Jose Luis Ceballos, Fulvio CiCiotti, Benno Muehlbacher, Andreas Wiesbauer
  • Patent number: 11921074
    Abstract: In accordance with an embodiment, a gas-sensitive device includes a substrate structure, and a gas sensitive capacitor. The gas sensitive capacitor a first capacitor electrode in form of a gas-sensitive layer on a first main surface region of an insulation layer, and a second capacitor electrode in form of a buried conductive region below the insulation layer, so that the insulation layer is arranged between the first and second capacitor electrode. The gas-sensitive layer comprises a sheet impedance which changes in response to the adsorption or desorption of gas molecules.
    Type: Grant
    Filed: November 3, 2021
    Date of Patent: March 5, 2024
    Assignee: Infineon Technologies AG
    Inventors: Markus Meyer, Werner Breuer
  • Patent number: 11921666
    Abstract: A method includes detecting a voltage at a configuration terminal of a mobile industry processor interface (MIPI) radio frequency front end (RFFE) device with a timing based on a MIPI RFFE signal received by the MIPI RFFE device, and setting an address for the MIPI RFFE device based on the detected voltage.
    Type: Grant
    Filed: February 4, 2022
    Date of Patent: March 5, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Andreas Baenisch
  • Patent number: 11921032
    Abstract: A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.
    Type: Grant
    Filed: November 23, 2022
    Date of Patent: March 5, 2024
    Assignee: Infineon Technologies AG
    Inventor: Horst Theuss
  • Patent number: 11923120
    Abstract: A circuit is provided that comprises a transformer having a first coil, which is arranged on a substrate, a second coil, which is arranged above the first coil on the substrate, and a dielectric between the first coil and the second coil. The circuit furthermore comprises a resonant circuit, which is couplable to the first coil and/or the second coil to form a resonant loop, wherein a measure of a characteristic frequency of the resonant loop and/or a measure of a power consumption of the resonant loop is able to be tapped off at an output of the resonant circuit. A corresponding method is also provided.
    Type: Grant
    Filed: October 19, 2020
    Date of Patent: March 5, 2024
    Assignee: Infineon Technologies AG
    Inventors: Marcus Nuebling, Jaafar Mejri
  • Patent number: 11916059
    Abstract: An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection lay
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventors: Andre Schmenn, Stefan Pompl, Damian Sojka, Katharina Umminger
  • Patent number: 11914069
    Abstract: A radio frequency (RF) system includes a radar monolithic microwave integrated circuit (MMIC), which includes: a phase detector including a test input port, and a monitoring input port, wherein the phase detector is configured to generate an output signal that represents a phase difference between a test signal received at the test input port and a monitoring signal received at the monitoring input port; a test signal path including at least one active component, the test signal path configured to receive a local oscillator signal and provide the local oscillator signal as the test signal to the test input port during a first measurement interval; and a passive signal path configured to receive the local oscillator signal and provide the local oscillator signal to the monitoring input port as the monitoring signal during the first measurement interval.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventor: Vincenzo Fiore
  • Patent number: 11916007
    Abstract: A semiconductor device includes a substrate comprising an antenna and a conductive feature; an integrated circuit (IC) die attached to the substrate and comprising a radio frequency (RF) circuit; and a flexible circuit integrated with the substrate, where the flexible circuit is electrically coupled to the IC die and the substrate, a first portion of the flexible circuit being disposed between opposing sidewalls of the substrate, a second portion of the flexible circuit extending beyond the opposing sidewalls of the substrate, the second portion of the flexible circuit comprising an electrical connector at a distal end.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: February 27, 2024
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Ashutosh Baheti, Eung San Cho, Saverio Trotta
  • Patent number: 11914708
    Abstract: A redundancy system includes a first computational device and a second computational device each configured to receive at least one input and to generate a first output and a second output, respectively, based on the at least one input; a random sequence generator configured to generate a random bit sequence; a random delay selector configured to determine a random delay based on the random bit sequence; a first random delay circuit configured to delay outputting the at least one input to the first computational device based on the random delay; a second random delay circuit configured to delay outputting the second output based on the random delay; and a fault detection circuit configured to receive the first output and the delayed second output, and to generate a comparison result based on comparing the first input to the delayed second output.
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventors: Alexander Zeh, Avni Bildhaiya
  • Patent number: 11916546
    Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventors: Semen Syroiezhin, Ivan Jevtic, Valentyn Solomko
  • Patent number: 11914007
    Abstract: A magnetic field sensor package includes a sensor housing; a first sensor chip having an integrated first differential magnetic field sensor circuit, the first sensor chip being arranged in the sensor housing; a second sensor chip having an integrated second differential magnetic field sensor circuit, the second sensor chip being arranged in the sensor housing; a common leadframe arranged in the sensor housing and interposed between the first sensor chip and the second sensor chip; and an insulating layer arranged in the sensor housing interposed between the first sensor chip and the common leadframe. The first sensor chip is coupled to the common leadframe via the insulating layer. Additionally, the insulating layer electrically insulates the first sensor chip from the common leadframe such that the first sensor chip and the second sensor chip are galvanically decoupled from each other.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventors: Dirk Hammerschmidt, Helmut Koeck, Andrea Monterastelli, Tobias Werth
  • Patent number: 11915999
    Abstract: A semiconductor device includes: a carrier including an electronic circuit; a plurality of semiconductor chip packages mounted on the carrier, each of the chip packages including an encapsulation encapsulating the semiconductor chip, a plurality of contact structures electrically connecting the semiconductor chip with the electronic circuit, and at least one cooling structure protruding from the encapsulation; and a cooling element thermally conductively connected to at least one cooling structure of each of at least two of the plurality of semiconductor chip packages.
    Type: Grant
    Filed: January 31, 2023
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventors: Tomasz Naeve, Ralf Otremba, Thorsten Scharf, Markus Dinkel, Martin Gruber, Elvir Kahrimanovic
  • Patent number: 11906427
    Abstract: A method for determining a reflectivity value indicating a reflectivity of an object is provided. The method includes performing a Time-of-Flight (ToF) measurement using a ToF sensor. A correlation function of the ToF measurement increases over distance within a measurement range of the ToF sensor such that an output value of the ToF sensor for the ToF measurement is independent of the distance between the ToF sensor and the object. The method further includes determining the reflectivity value based on the output value of the ToF sensor for the ToF measurement.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: February 20, 2024
    Assignee: Infineon Technologies AG
    Inventors: Armin Josef Schoenlieb, Caterina Nahler, Hannes Plank
  • Patent number: 11905167
    Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: February 20, 2024
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Klein, Evangelos Angelopoulos, Stefan Barzen, Marc Fueldner, Stefan Geissler, Matthias Friedrich Herrmann, Ulrich Krumbein, Konstantin Tkachuk, Giordano Tosolini, Juergen Wagner