Abstract: A semiconductor device includes a trench structure extending from a first surface into a semiconductor body composed of silicon carbide. The trench structure includes an electrode and between the electrode and the first surface a gate electrode. A shielding region adjoining the electrode forms a first pn junction with a drift structure formed in the semiconductor body. A Schottky contact is formed between the drift structure and a first contact structure.

Abstract: Communication devices and methods and corresponding systems are discussed. Transmission is based on symbols, where each symbol comprises a same number of time units. A position of transition between a first signal value and a second signal value within the symbol indicates a value of the symbol.

Abstract: A circuit for performing a near-field communication having a contactless circuit which is configured for the contactless exchange of data signals with an external contactless reading device, a security circuit which has a memory in which application identifiers are stored and which is configured to execute security-related applications, and a control circuit which is configured to execute non-security-related applications, wherein the contactless circuit, the security circuit and the control circuit are coupled with one another in such a way and, using at least one of the application identifiers, are configured in such a way that the data signals are supplied from the contactless circuit to the control circuit and vice versa exclusively by means of the security circuit. The security circuit can furthermore store bonding and authentication keys for applications in the control circuit in order to set up a secure data exchange channel for these applications.

Abstract: A SiC semiconductor device includes a first load electrode, a normally-on junction field effect transistor, and an insulated gate field effect transistor. The normally-on junction field effect transistor includes a channel region electrically connected to the first load electrode. The insulated gate field effect transistor and the normally-on junction field effect transistor are electrically connected in series. The insulated gate field effect transistor includes a source region and a body region. The source region is electrically connected to a channel region of the normally-on junction field effect transistor. The body is electrically connected to the first load electrode.

Abstract: A semiconductor device includes a semiconductor substrate, a power transistor formed in the semiconductor substrate, the power transistor including an active area in which one or more power transistor cells are formed, a first metal pad formed above the semiconductor substrate and covering substantially all of the active area of the power transistor, the first metal pad being electrically connected to a source or emitter region in the active area of the power transistor, the first metal pad including an interior region laterally surrounded by a peripheral region, the peripheral region being thicker than the interior region, and a first interconnect plate or a semiconductor die attached to the interior region of the first metal pad by a die attach material. Corresponding methods of manufacture are also described.

Abstract: An apparatus for controlling a sensor of an object's safety system is provided. The apparatus includes an input node configured to receive safety information about a likelihood that the sensor senses a safety-relevant event. Further, the apparatus includes a processing circuit configured to control the sensor to perform a sensor diagnosis procedure, if the safety information indicates that it is unlikely that the sensor senses the safety-relevant event within a future period of time.

Abstract: A method includes providing a first layer of epitaxial silicon carbide supported by a silicon carbide substrate, providing a second layer of epitaxial silicon carbide on the first layer, forming a plurality of semiconductor devices in the second layer, and separating the substrate from the second layer at the first layer. The first layer includes a plurality of voids.

Abstract: In accordance with an embodiment of the present invention, a semiconductor chip includes a device region disposed in or over a substrate, a doped region disposed in the device region, and a through via disposed in the substrate. The through via extends through the doped region.

Abstract: A chip card is provided. The chip card can have a metal layer in which an opening is formed and a slot that extends from one edge of the opening to the outer edge of the metal layer, a booster antenna structure, arranged in the opening, having an antenna section for electromagnetically coupling to the metal layer and having a coupling region for electromagnetically coupling to an antenna structure of a chip module, and the chip module, which is arranged in the coupling region, having the antenna structure arranged on the chip module.

Abstract: Sensor device, control system and method of communication between a sensor device and a control system. Sensor devices, control systems and methods for communication between sensor devices and control systems are provided. In these, sensor data are transmitted via first interfaces and redundant sensor data and/or other data are transmitted via second interfaces.

Abstract: A method of manufacturing a module is disclosed. In one example, the method comprises providing at least one solder body with a base portion and an elevated edge extending along at least part of a circumference of the base portion. At least one carrier, on which at least one electronic component is mounted, is placed in the at least one solder body so that the at least one carrier is positioned on the base portion and is spatially confined by the elevated edge.

Abstract: A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, an encapsulant encapsulating at least part of the carrier and at least part of the electronic component. A compression structure is provided that applies compressive stress to at least part of the encapsulant.

Abstract: A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

Abstract: A method for forming a semiconductor device includes forming a mask layer with a first implantation window on a semiconductor substrate and implanting dopants with a first implantation energy into the semiconductor substrate through the first implantation window to form a first portion of a doping region of the semiconductor device. The mask layer is adapted to form a second implantation window of the mask layer. Further, dopants are implanted with a second implantation energy into the semiconductor substrate through the second implantation window. The second implantation energy differs from the first implantation energy and a lateral dimension of the first implantation window differs from a lateral dimension of the second implantation window.

Abstract: In accordance with an embodiment, a system for surveillance includes an audio signal analyzer, wherein the audio signal analyzer is configured to receive one or more audio microphone signals, where the audio signal analyzer is configured to determine a pattern matching result by determining whether the one or more microphone signals comprise at least one audio pattern of one or more predefined audio patterns; an air pressure change determiner, where the air pressure change determiner is configured to receive an air pressure change signal indicating an air pressure change; and an evaluator, wherein the evaluator is configured to indicate, depending on the pattern matching result and depending on the air pressure change, that a predefined event occurred.

Abstract: A semiconductor device includes a die paddle, a plurality of electrically conductive leads extending away from the die paddle, and an adhesion promoter plating material selectively formed on the electrically conductive leads such that outer portions of the leads are covered by the adhesion promoter plating material, and interior portions of the leads that are disposed between the die paddle and the respective outer portions of each lead are substantially devoid of the adhesion promoter plating material.

Abstract: A method is proposed for determining at least one calibration parameter for a radar system having a first radar transceiver and a second radar transceiver. The method includes performing a first calibration measurement and a second calibration measurement. The first calibration measurement and the second calibration measurement both include generating a first frequency-modulated oscillation signal and a second frequency-modulated oscillation signal, and combining the first oscillation signal received via the second terminal with the second oscillation signal, in order to generate a first difference signal for the first calibration measurement and a second difference signal for the second calibration measurement, both having a frequency difference between the first oscillation signal and the second oscillation signal.

Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.

Abstract: An integrated circuit that may be employed as a smart switch. The integrated circuit includes a first part of a semiconductor switch coupled between a supply node and an output node and configured to provide a first current path in accordance with a first drive signal. The integrated circuit further includes a second part of the semiconductor switch coupled between the supply node and the output node and configured to provide a second current path in accordance with a second drive signal. The integrated circuit includes a drive circuit configured to generate, in response to a switch-on command, the first drive signal and the second drive signal such that the first part of the semiconductor switch and the second part of the semiconductor switch are alternatingly switched on and off. During an overlap period, both the first and the second part of the semiconductor switch are in an on-state.

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.