Patents Assigned to Infineon Technologies AG
  • Publication number: 20250257469
    Abstract: A metal component and an electronic device including a metal component is disclosed. In one example, the metal component includes a metallic core material, a first metal layer arranged over the metallic core material, a second metal layer arranged over the first metal layer, and an intermetallic compound layer. The intermetallic compound layer is arranged between the first metal layer and the second metal layer.
    Type: Application
    Filed: January 27, 2025
    Publication date: August 14, 2025
    Applicant: Infineon Technologies AG
    Inventors: Pei Luan POK, Swee Kah LEE
  • Patent number: 12384272
    Abstract: A vehicle system includes a vehicle controller configured to detect a parking mode of a vehicle and generate a low-power command based on detecting the parking mode; a collision monitoring system; and a communication interface. The collision monitoring system includes a sensor controller configured to receive the low-power command via the communication interface, enter into a low-power mode, and set the communication interface into an idle communication mode during the low-power mode; a sensor configured to generate a sensor signal based on a measured property; and a processing circuit configured to compute, during the low-power mode, a derivative measurement at a plurality of sampling times based on the sensor signal, and compare each instance of the derivative measurement to a threshold. The sensor controller is configured to transmit a wake-up command to the vehicle controller via the communication interface based on the derivative measurement satisfying the threshold.
    Type: Grant
    Filed: December 16, 2022
    Date of Patent: August 12, 2025
    Assignee: Infineon Technologies AG
    Inventors: Dan-Alexandru Mocanu, Ilie-Ionut Cristea
  • Patent number: 12386031
    Abstract: According to a further example implementation, the method comprises measuring magnitude response information relating to an analog baseband signal processing chain of a reception channel of a radar system, determining—based on the measured magnitude response information—at least one value which characterizes at least one frequency limit of the first baseband signal processing chain, and determining a phase response for the baseband signal processing chain based on the at least one value and a model of the baseband signal processing chain. The method also comprises digitizing an output signal from the baseband signal processing chain and digitally processing the digitized output signal, wherein phase equalizing is carried out based on the determined phase response during normal radar operation of the radar system.
    Type: Grant
    Filed: June 28, 2022
    Date of Patent: August 12, 2025
    Assignee: Infineon Technologies AG
    Inventors: Michael Gerstmair, Michael Petit, Josef Kulmer, Julian Mitterlehner, Dominik Breuer, Alexander Girlinger
  • Patent number: 12386035
    Abstract: A semiconductor chip comprising at least one transmit channel and/or at least one receive channel for radar signals and also a sequencing circuit is proposed. In this case, the sequencing circuit is configured centrally to determine a sequencing scheme for time-dependent functions of the transmit channel and/or of the receive channel and to drive circuit elements of the transmit channel and/or of the receive channel in accordance with the sequencing scheme.
    Type: Grant
    Filed: August 11, 2022
    Date of Patent: August 12, 2025
    Assignee: Infineon Technologies AG
    Inventors: Christian Schmid, Rainer Findenig, Bernhard Greslehner-Nimmervoll
  • Patent number: 12386062
    Abstract: According to various embodiments, a radar system is described including a first radar processing device and a second radar processing device, wherein the first radar processing device is configured to generate radar data and to transmit the radar data partially to the second radar processing device for further processing, wherein the first radar processing device is configured to omit parts of the radar data from the transmission and wherein the second radar processing device is configured to reconstruct the omitted parts using a machine learning model trained to supplement radar data with additional radar data and is configured to further process the transmitted parts of the radar data in combination with the additional radar data.
    Type: Grant
    Filed: April 27, 2022
    Date of Patent: August 12, 2025
    Assignee: Infineon Technologies AG
    Inventors: Simon Achatz, Maximilian Eschbaumer
  • Patent number: 12386462
    Abstract: An ultrasonic touch sensor includes a touch structure including a touch surface configured to receive a touch, a signal generator configured to generate an excitation, a capacitive ultrasonic transmitter configured to transmit an ultrasonic transmit wave toward the touch structure based on the excitation signal while the touch surface is submerged under the water, a capacitive ultrasonic receiver configured to receive an ultrasonic reflected wave produced by a reflection of the ultrasonic transmit wave at the touch structure while the touch surface is submerged under the water and generate a measurement signal representative of the ultrasonic reflected wave, and a measurement circuit configured to perform a comparison based on the measurement signal and a threshold, and determine whether a no-touch event or a touch event has occurred at the touch surface while the touch surface is submerged under the water based on whether the measurement signal satisfies the threshold.
    Type: Grant
    Filed: July 31, 2024
    Date of Patent: August 12, 2025
    Assignee: Infineon Technologies AG
    Inventors: Costin Batrinu, Emanuel Stoicescu, Gheorghe-Iulian Chivu, Victor-Valentin Mocanu
  • Patent number: 12381855
    Abstract: A network node may receive a control plane message. The control plane message may include an indication that the control plane message is a control plane message, an indication that the control plane message is associated with security, an indication of a security key to be associated with a secure zone (SZ) of an in-vehicle communication network, and an indication of a freshness value. The network node may perform a cryptographic operation for a data plane message associated with the SZ using the security key.
    Type: Grant
    Filed: December 13, 2022
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Alexander Zeh, Donjete Elshani Rama
  • Patent number: 12382677
    Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a drift region. Each first cell includes a mesa having a port region electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each second cell includes a mesa having a port region of the opposite conductivity type electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each mesa is spatially confined in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure and has a total extension of less than 100 nm in the direction.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Anton Mauder, Franz-Josef Niedernostheide, Christian Philipp Sandow
  • Patent number: 12380589
    Abstract: In an embodiment, a method to evaluate radar images includes providing a first raw radar image and a second raw radar image and determining, whether a reliability criterion is fulfilled. The method further includes using a first coordinate and a second coordinate output by a trained neural network as an estimate of a position of an object if the reliability criterion is fulfilled, the trained neural network using the first raw radar image and the second raw radar image as an input. The method further includes using a third coordinate and a fourth coordinate output by another radar processing pipeline as the estimate of the position of the object if the reliability criterion is not fulfilled, the radar processing pipeline using the first raw radar image and the second raw radar image as an input.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Lorenzo Servadei, Avik Santra
  • Patent number: 12379666
    Abstract: A method of generating chip-specific identification code marks on semiconductor chips includes patterning a resist layer over a semiconductor wafer by laser direct image exposure, the patterning including writing chip-specific identification codes into the resist layer over chip areas of the semiconductor wafer. The patterned resist layer is then developed.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Detlef Hofmann, Heiko Aßmann
  • Patent number: 12379258
    Abstract: In accordance with an embodiment, a device includes an interface configured for obtaining at least one measurement signal from a temperature sensor. In a first time interval the at least one measurement signal comprises information about a temperature-dependent voltage difference between a first temperature-dependent voltage at a first diode of the temperature sensor and a second temperature-dependent voltage at a second diode of the temperature sensor. In a second time interval the at least one measurement signal comprises information about a measurement value of a temperature-dependent voltage at a temperature-dependent electrical component of the temperature sensor.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Christian Jenkner, Daniel Neumaier
  • Patent number: 12379411
    Abstract: According to various embodiments, a circuit is described including a plurality of scan flip-flops including a sequence of scan flip-flops, wherein at least some scan flip-flops of the sequence are wrapper scan flip-flops, and including, for each scan flip-flop of at least a subset of the scan flip-flops, at the wrapper scan flip-flop's test input a respective test input circuit configured to, when supplied with a mode control signal having a first value, connect the test input to the output of the preceding wrapper scan flip-flop such that the test input of the flip-flop is supplied with the content of the preceding wrapper scan flip-flop and when supplied with the mode control signal having a second value, connect the test input to an output of a part of the circuit such that the test input of the flip-flop is supplied with a value depending on a test result.
    Type: Grant
    Filed: September 25, 2023
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventor: Alessio Ciarcia
  • Patent number: 12381381
    Abstract: A sensor device contains a busbar, a dielectric shell arranged over the busbar, a dielectric layer arranged over the busbar, and a sensor chip arranged within the dielectric shell, wherein the sensor chip is configured to detect a magnetic field induced by an electric current flowing through the busbar.
    Type: Grant
    Filed: December 22, 2022
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Rainer Markus Schaller, Volker Strutz, Ronak Kalhor-Witzel, Hansjoerg Walter Kuemmel
  • Patent number: 12374632
    Abstract: A semiconductor device includes an active region and a trapping region positioned peripherally with respect to the active region, the trapping region presenting trapping apertures permitting the passage of particles, the trapping apertures being in fluid communication with at least one trapping chamber for trapping the particles. A method for manufacturing the semiconductor devices from one semiconductor wafer presents semiconductor device regions to be singulated along a dicing portion line.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: July 29, 2025
    Assignee: Infineon Technologies AG
    Inventors: Gunther Mackh, Martin Brandl, Bernhard Drummer
  • Patent number: 12375049
    Abstract: A balanced power amplifier includes a first power amplifier configured to apply a first gain having a first predetermined magnitude and a first programmable phase adjustable phase to generate a first amplified signal, the first programmable phase being adjustable to either a first phase or to a second phase that is 180° phase shifted relative to the first phase; a second power amplifier configured to apply a second gain having a second predetermined magnitude and a second programmable phase to generate a second amplified signal, the second programmable phase being adjustable to either the first phase or to the second phase; and a 90° hybrid coupler configured to receive the first amplified signal and the second amplified signal and generate and output a first output signal or a second output signal based on a combination of the first amplified signal and the second amplified signal.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: July 29, 2025
    Assignee: Infineon Technologies AG
    Inventor: Vincenzo Fiore
  • Patent number: 12372633
    Abstract: A radar monolithic microwave integrated circuit includes a radio frequency (RF) input configured to receive an RF signal comprising a plurality of frequency ramps; a baseband processing circuit configured to convert the RF signal into a baseband signal comprising a plurality of analog signal segments each corresponding to a different frequency ramp; an analog-to-digital converter configured to convert the plurality of analog signal segments into a plurality of respective digital signal segments, wherein each digital signal segment of the plurality of respective digital signal segments comprises a plurality of digital samples corresponding to a respective analog signal segment; and an encoder configured to receive a single digital signal segment and compress the plurality of digital samples of the single digital signal segment based on a data compression that has a defined correlation with a windowing function to generate compressed radar data corresponding to the single digital signal segment.
    Type: Grant
    Filed: January 24, 2023
    Date of Patent: July 29, 2025
    Assignee: Infineon Technologies AG
    Inventor: Stefan Schmalzl
  • Patent number: 12374661
    Abstract: A power module includes: a first substrate having a patterned first metallization; a second substrate vertically aligned with the first substrate and having a patterned second metallization that faces the patterned first metallization; first vertical power transistor dies having a drain pad attached to a first island of the patterned first metallization and a source pad electrically connected to a first island of the patterned second metallization via first spacers; and second vertical power transistor dies having a source pad electrically connected to the first island of the patterned first metallization via second spacers. A first subset of the second vertical power transistor dies has a drain pad attached to a second island of the patterned second metallization. A second subset of the second vertical power transistor dies has a drain pad attached to a third island of the patterned second metallization. A method of producing the module is described.
    Type: Grant
    Filed: August 5, 2022
    Date of Patent: July 29, 2025
    Assignee: Infineon Technologies AG
    Inventors: Adrian Lis, Ewald Guenther, Thomas Schmid
  • Patent number: 12372780
    Abstract: A microelectromechanical systems (MEMS) mirror package assembly includes: a MEMS wafer including a stator portion and a rotor portion that includes a MEMS mirror configured to rotate about an axis, wherein the MEMS mirror is suspended over a back cavity, wherein the MEMS wafer defines a first portion of the back cavity; a spacer wafer, wherein the backside of the spacer wafer is bonded to the frontside of the MEMS wafer, wherein the spacer wafer defines a first portion of a front cavity arranged over the MEMS mirror; a transparent cover wafer, wherein the backside of the transparent cover wafer is bonded to the frontside of the spacer wafer, wherein the transparent cover wafer includes a transparent dome structure arranged over the MEMS mirror and defining a second portion of the front cavity. The center of the MEMS mirror is arranged substantially at a vertex of the transparent dome structure.
    Type: Grant
    Filed: March 9, 2022
    Date of Patent: July 29, 2025
    Assignee: Infineon Technologies AG
    Inventors: Andre Brockmeier, Ulf Bartl, Kurt Sorschag
  • Patent number: 12373808
    Abstract: An electronic device is provided. The electronic device may include at least one electronic circuit configured to selectively provide at least one function, an interface configured to receive from a source external to the electronic device instructions including a device identification and at least one usage measurement parameter, and a secure element configured to receive the instructions from the interface, to process the instructions, and to modify the at least one function based on a processing result.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: July 29, 2025
    Assignee: Infineon Technologies AG
    Inventors: Stephen Hanna, Theodore Varelas
  • Publication number: 20250240890
    Abstract: A method of embedding an embeddable object into a stacked substrate is provided. The method may include forming a stacked substrate including a first layer and a second layer disposed over the first layer, and embedding material disposed between the first layer and the second layer. The embeddable object is disposed into a recess of the stacked substrate. A portion of the embedding material is transferred from a high viscosity or solid state into a low viscosity state so that at least a portion of the embedding material flows into the recess to laterally fix the embeddable object within the recess to the stacked substrate.
    Type: Application
    Filed: January 21, 2025
    Publication date: July 24, 2025
    Applicant: Infineon Technologies AG
    Inventors: Thomas GEBHARD, Toni SALMINEN, Mahadi-Ul HASSAN