Patents Assigned to Infineon Technologies AG
  • Publication number: 20200221513
    Abstract: A method of acknowledging data transmissions for a tire pressure monitoring system (TPMS) sensor module includes generating tire pressure information based on measuring an internal air pressure of a tire; selectively operating a transceiver in an advertising mode and a standby mode; transmitting, by the transceiver, a message including the pressure information while in the advertising mode; on a condition that the transceiver receives, in the advertising mode, an acknowledgement in response to the transmitted message, setting the transceiver into the standby mode; while the transceiver is in the advertising mode and on a condition that the transceiver does not receive any acknowledgement in response to the transmitted message within a waiting period, instructing the transceiver to retransmit the message via a command; and retransmitting the message, by the transceiver, in the advertising mode after the waiting period in response to the command.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Michael KANDLER, Wolfgang SCHEIBENZUBER, Maximilian WERNER
  • Publication number: 20200220075
    Abstract: Methods and apparatuses for producing magnetoresistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magnetoresistive elements.
    Type: Application
    Filed: March 19, 2020
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventor: Wolfgang RABERG
  • Publication number: 20200217906
    Abstract: An apparatus for magnetic field detection includes a power supply and a plurality of magnetic field sensitive devices including at least first, second, and third magnetic field sensitive devices. The first to third magnetic field sensitive devices are coupled to each other and to the power supply such that a first supply current path runs through the first magnetic field sensitive device and not through the second magnetic field sensitive device, a second supply current path runs through the second magnetic field sensitive device and not through the first magnetic field sensitive device, and the first and second current paths run through the third magnetic field sensitive device. An internal resistance of the third magnetic field sensitive device is smaller than both an internal resistance of the first magnetic field sensitive device and an internal resistance of the second magnetic field sensitive device.
    Type: Application
    Filed: March 19, 2020
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventor: Udo AUSSERLECHNER
  • Publication number: 20200217923
    Abstract: The present disclosure relates to a transmission apparatus, including at least one first RF signal connection for an RF signal having a first phase, a ring coupler having a plurality of antenna connections for coupling a plurality of antennas in the first RF signal connection, wherein the ring coupler is configured to cause, at each of different antenna connections of the ring coupler, a constructive superposition of components of the RF signal that propagate from the first RF signal connection to the respective antenna connections in different directions in the ring coupler, wherein RF signals having different phases are obtained at the different antenna connections.
    Type: Application
    Filed: December 18, 2019
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Philipp SCHERZ, Markus Josef LANG, Roland VUKETICH
  • Publication number: 20200217907
    Abstract: A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.
    Type: Application
    Filed: January 9, 2019
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Wolfgang RABERG, Clemens MUEHLENHOFF, Juergen ZIMMER
  • Publication number: 20200219841
    Abstract: A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.
    Type: Application
    Filed: March 16, 2020
    Publication date: July 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Edmund Riedl, Wu Hu Li, Alexander Heinrich, Ralf Otremba, Werner Reiss
  • Patent number: 10707856
    Abstract: A circuit comprises a first metal-oxide semiconductor, MOS, power transistor having a first gate terminal, a first drain terminal, and a first source terminal, a second MOS power transistor having a second gate terminal, a second drain terminal, and a second source terminal, and a switch connected in-between the first gate terminal and the second gate terminal and configured to selectively couple the first gate terminal and the second gate terminal.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Florian Brugger, Christian Djelassi-Tscheck, Alexander Mayer
  • Patent number: 10704926
    Abstract: A sensor arrangement having a rotatable driving shaft extending along a rotation axis and comprising a bore extending from a first end face of the shaft along the rotation axis; a magnet arranged at least partially within the bore and coupled to the driving shaft, the magnet configured to generate a magnetic field within the bore; a sensor element arranged at least partially within the bore, and configured to sense a rotation of the magnetic field in response to rotation of the driving shaft; and a magneto-static shield arranged to surround the magnet and the sensor element, wherein the magneto-static shield is stationary with respect to the driving shaft.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Leo Aichriedler, Peter Slama, Udo Ausserlechner
  • Patent number: 10707158
    Abstract: A package comprising a chip carrier, an electronic chip on the chip carrier, a clip on the electronic chip, an encapsulant at least partially encapsulating the electronic chip, and an electrically conductive vertical connection structure provided separately from the clip and electrically connecting the chip carrier with the clip.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Alexander Heinrich, Bernd Goller, Thorsten Meyer, Gerald Ofner
  • Patent number: 10707814
    Abstract: A multi-stage device includes multiple stages such as a first stage and a second stage. During operation, the first stage receives an input signal and outputs an intermediate signal based on the input signal. The second stage is coupled to the first stage to receive the intermediate signal and produce an output signal. According to one configuration, the second stage includes: i) a transistor, and ii) a circuit path between the first stage and the transistor. The transistor component is controlled to derive the output signal from the intermediate signal inputted to the circuit path.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventor: Daniel Schroegendorfer
  • Patent number: 10704925
    Abstract: An angle sensor includes a ring magnet adapted to be attached to a rotatable shaft. The ring magnet has an axis of rotation and an inner radius and an outer radius extending from the axis of rotation to define an annulus. A first magnetic sensor is situated proximate the ring magnet to measure magnetic field lines within the annulus, and a second magnetic sensor is situated proximate the ring magnet to measure magnetic field lines outside the annulus.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 10707362
    Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Bever, Henning Feick, Dirk Offenberg, Stefano Parascandola, Ines Uhlig, Thoralf Kautzsch, Dirk Meinhold, Hanno Melzner
  • Patent number: 10707888
    Abstract: A method and an apparatus for determining the suitability of a test delay value between comparator decisions of a comparator circuit of an asynchronous successive approximation analog/digital converter and a method for determining an optimized delay value of a comparator of an asynchronous successive approximation analog/digital converter are provided.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: July 7, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Martin Pernull, Peter Bogner
  • Patent number: 10704988
    Abstract: A measurement system includes a signal bus, an electronic control unit, and an emulated sensor. The electronic control unit is coupled to the signal bus. The sensor with emulated line adaptation is also coupled to the signal bus. The emulated sensor is configured to adapt current consumption according to a selected impedance and a selected frequency range.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventor: Dirk Hammerschmidt
  • Patent number: 10704933
    Abstract: A sensor arrangement includes a sensor element and a magnet module. The sensor element is configured to measure a magnetic field and is positioned within a shaft. The shaft is configured to shield the magnet module and the sensor element. The magnet module is configured to generate the magnetic field. The sensor element is at least partially positioned within the shaft.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Leo Aichriedler, Peter Slama
  • Patent number: 10707645
    Abstract: In one example, a method includes outputting, by a power supply and across a supply node and a ground node, a supply power signal; and selectively outputting, by a driver, a power signal to a second terminal of a light emitting element that has a first terminal and the second terminal, wherein the first terminal of the light emitting element is coupled to a load node, wherein a supply terminal of the driver is coupled to the supply node, wherein a ground terminal driver is coupled to the ground node, and wherein a difference between a potential of the supply node and a potential of the ground node is less than an activation voltage of the light emitting element.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Herwig Wappis, Fabrizio Cortigiani
  • Patent number: 10705132
    Abstract: A method including feeding a test signal into a first end of a conductor track of a semiconductor chip, wherein the conductor track crosses an indentation of a substrate of the semiconductor chip; and detecting the test signal at a second ends of the conductor track, which wherein the detected test signal is indicative of fracture of the substrate of the semiconductor chip at the indentation.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Zettler, Dirk Hammerschmidt, Friedrich Rasbornig, Wolfgang Scheibenzuber, Hans-Joerg Wagner
  • Patent number: 10705198
    Abstract: In accordance with an embodiment, a method of monitoring an air flow includes performing a plurality of radar measurements using a millimeter-wave radar sensor with a line of sight having a component perpendicular to a direction of an air flow, detecting an object in the air flow based on the plurality of radar measurements, calculating a displacement of the object and a size of the object based on the plurality of radar measurements, estimating a velocity of the object based on the calculated displacement, and calculating a risk metric based on the calculated size of the object and estimated velocity of the object.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: July 7, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Avik Santra, Jagjit Singh Bal
  • Patent number: 10707818
    Abstract: A packaged amplifier circuit includes an RF package with a die pad, and RF input and output leads extending away from the die pad opposite directions. An RF transistor die is mounted on the die pad such that a first outer edge side of the RF transistor die faces the first RF lead and a second outer edge side of the RF transistor die faces the second RF lead. A passive electrical connector is integrally formed in the RF transistor die. The passive electrical connector includes a first end connection point closer to the first outer edge side, and a second end connection point closer to the second outer edge side. A first discrete reactive device is mounted on the die pad between the first outer edge side and the first RF lead. The passive electrical connector electrically couples the first discrete reactive device to the second RF lead.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Helmut Brech, Richard Wilson
  • Patent number: 10707840
    Abstract: A power stage having a power transistor coupled between a power supply and a switching node; a charge pump coupled between the power supply and a gate of the power transistor; and a gate driver configured to charge the gate of the power transistor until the gate voltage reaches a predefined voltage, and further charge the gate of the power transistor from the charge pump.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: July 7, 2020
    Assignee: Infineon Technologies AG
    Inventors: Emanuele Bodano, Vratislav Michal, Joachim Pichler