Abstract: A method comprises applying a driver voltage to an electrostatic comb drive of an MEMS apparatus and overlaying the driver voltage with a periodic voltage signal. The method further comprises determining a torsion angle of a mirror body of the MEMS apparatus based on the periodic voltage signal.

Abstract: A chip package includes a chip with at least one contact pad, a contact structure formed from at least one continuous longitudinally extended electrically conductive element by attaching the conductive element to the contact pad in at least three contact positions, wherein the conductive element bends away from the contact pad between pairs of consecutive contact positions, and an encapsulation partially encapsulating the contact structure, wherein the encapsulation includes an outer surface facing away from the chip, and wherein the contact structure is partially exposed at the outer surface.

Abstract: A circuit includes a cross-talk compensation component including a power profile reconstruction component for reconstructing the power profile of a digital microphone coupled to a microelectromechanical (MEMS) device, wherein the power profile represents power consumption of the digital microphone over time between at least two operational modes of the digital microphone, and a reconstruction filter for modeling thermal and/or acoustic properties of the digital microphone; and a subtractor having a first input for receiving a signal from the digital microphone, a second input coupled to the cross-talk compensation component, and an output for providing a digital output signal.

Abstract: A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and includes first and second openings, and performing a laser thermal annealing process that transmits laser energy through the first and second openings and into the semiconductor body, wherein the thermosensitive element comprises a critical temperature at which the thermosensitive element is irreparably damaged, wherein the laser thermal annealing process brings portions of the semiconductor body that are underneath the first and second openings to above the critical temperature, and wherein during the laser thermal annealing process the thermosensitive element remains below the critical temperature.

Abstract: A driver circuit is configured control one or more bypass transistors. The driver circuit includes a primary supply input connection configured to supply the driver circuit with power from a set of battery cells. The set of battery cells is configured to supply power to a load via a power delivery circuit. The driver circuit also includes one or more secondary supply input connections. The driver circuit is configured to receive information indicating whether an error condition is present in the power delivery circuit and control, based on the error condition being present in the power delivery circuit, the one or more bypass transistors to define a bypass current path. The driver circuit is also configured to receive, via a secondary supply input connection of the one or more secondary supply input connections, power from the bypass current path.

Abstract: A torque measurement system includes a first rotatable carrier structure and a second rotatable carrier structure mechanically coupled to a shaft; a first metamaterial track coupled to and configured to co-rotate with the first rotatable carrier structure; a second metamaterial track coupled to and configured to co-rotate with the second rotatable carrier structure; and a low-friction material arranged between the first and the second rotatable carrier structures. The first and the second metamaterial tracks are spaced apart by a predetermined distance and are mutually coupled to each other by a torque-dependent coupling. Responsive to a torque applied to the shaft, the first metamaterial track is configured to undergo a rotational shift relative to the second metamaterial track. The low-friction material provides a low-friction rotational shift between the first rotatable carrier structure and the second rotatable carrier structure such that the predetermined distance is constant during the rotational shift.

Abstract: A radio frequency integrated circuit (RFIC) device includes: a first RF input/output (I/O) terminal; a second RF I/O terminal, where the first and the second RF I/O terminals are configured to transmit or receive an RF signal; a capacitor coupled between the first and the second RF I/O terminals; a first coil coupled between the first and the second RF I/O terminals, where the first coil is configured to provide ESD protection to the capacitor during a first ESD event; and a fast transient ESD protection circuit coupled between the first and the second RF I/O terminals, where the fast transient ESD protection circuit is configured to provide ESD protection to the capacitor during a second ESD event different from the first ESD event, where a first rise time of the first ESD event is longer than a second rise time of the second ESD event.

Abstract: An exemplary embodiment of a sensor system includes a magnet system which is designed to generate a magnetic field. Furthermore, the sensor system includes a first magnetic field sensor which is movable in a first direction relative to the magnet system and has a first distance from the magnet system in a second direction perpendicular to the first direction. The sensor system also includes a second magnetic field sensor which is movable in the first direction relative to the magnet system and has a second distance from the magnet system in the second direction, the second distance being greater than the first distance.

Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

Abstract: A carrier for carrying an electronic component of a package is disclosed. In one example, the carrier comprises a front side being provided with a horizontal component-sided area, and a back side opposing said front side and being provided with a horizontal back side area. A size of the horizontal back side area is larger than a size of the horizontal component-sided area.

Abstract: An approach for correcting at least one byte error in a binary sequence is proposed, the binary sequence comprising a plurality of bytes and being a code word of an error code in the error-free case. The approach comprises the steps of: (i) determining at least one byte error position signal which specifies whether or not a byte of the binary sequence is erroneous, (ii) determining at least one byte error correction value, based on which an erroneous byte position identified by means of the byte error position signal is correctable, the at least one byte error correction value being determined by virtue of a first value and a second value being determined for each of at least two byte positions based on a coefficient of the locator polynomial, and (iii) correcting the at least one byte error based on the at least one byte error correction value.

Abstract: Compiling a compression function of a lattice-based cryptographic mechanism by (i) basing the compression function on a lossy compression function, (ii) determining an error based on a loss introduced by an integer division, and (iii) determining an output of the compression function based on the error.

Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

Abstract: A method is disclosed. The method includes switching off a power transistor circuit in an electronic circuit. The electronic circuit includes a power source and a load circuit. The power transistor circuit is connected between the power source and the load circuit. Switching off the power transistor circuit includes operating at least one power transistor included in the power transistor circuit in an Avalanche mode so that at least a portion of energy stored in the electronic circuit before switching off the power transistor circuit is dissipated in the at least one power transistor.

Abstract: A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.

Abstract: A method includes: providing a layer of porous silicon carbide supported by a silicon carbide substrate; providing a layer of epitaxial silicon carbide on the layer of porous silicon carbide; forming semiconductor devices in the layer of epitaxial silicon carbide; and separating the silicon carbide substrate from the layer of epitaxial silicon carbide at the layer of porous silicon carbide. The layer of porous silicon carbide includes dopants defining a resistivity of the layer of porous silicon carbide. The resistivity of the layer of porous silicon carbide is different from a resistivity of the silicon carbide substrate. Additional methods are described.

Abstract: Cryptographic information is compiled by: (a) determining a first portion of the cryptographic information based on an input and a randomness: (b) checking a rejection criterion based on the first portion; (b1) re-starting step (a) with a different randomness if the rejection criterion is fulfilled; (b2) if not all portions of the cryptographic information have been generated, determining a subsequent portion of the cryptographic information based on the input and the randomness and continuing with step (b) or, otherwise, continuing with step (c); (c) determining the first portion of the cryptographic information based on the input and the randomness; (d) conveying the respective portion of the cryptographic information; and (e) if not all portions of the cryptographic information have been generated, determining a subsequent portion of the cryptographic information based on the input and the randomness and continuing with step (d).

Abstract: An arrangement includes a chamber, a heating element arranged in the chamber, wherein the heating element, when a first connection partner with a pre-connection layer formed thereon is arranged in the chamber, is configured to heat the first connection partner and the pre-connection layer, thereby melting the pre-connection layer, and a cooling trap. During the process of heating the first connection partner with the pre-connection layer formed thereon, the cooling trap has a temperature that is lower than the temperature of all other components of or in the chamber such that liquid evaporating from the pre-connection layer is attracted by and condenses on the cooling trap.

Abstract: A method includes providing a semiconductor package including an encapsulant body and a plurality of leads that protrude out from the encapsulant body; providing a semiconductor device testing apparatus including a package holder, a plurality of contact test probes, and a lead extender; arranging the semiconductor package within the package holder; actuating the semiconductor device testing apparatus such that a first one of the contact test probes directly contacts a first one of the leads and such that a second one of the contact test probes directly contacts the lead extender; and applying a test current to the semiconductor package such that part of the test current flows through the first one of the contact test probes directly contacting the first one of the leads and such that part of the test current flows through the second one of the contact test probes directly contacting the lead extender.

Abstract: A rotation sensor system includes a rotatable target object configured to rotate about a rotational axis in a rotation direction; a first millimeter-wave (mm-wave) metamaterial track coupled to the rotatable target object, where the first mm-wave metamaterial track is arranged around the rotational axis, and where the first mm-wave metamaterial track includes a first array of elementary structures having at least one first characteristic that changes around a perimeter of the first mm-wave metamaterial track; at least one transmitter configured to transmit a first electro-magnetic transmit signal towards the first mm-wave metamaterial track, where the first mm-wave metamaterial track converts the first electro-magnetic transmit signal into a first electro-magnetic receive signal; at least one receiver configured to receive the first electro-magnetic receive signal; and at least one processor configured to determine a rotational parameter of the rotatable target object based on the received first electro-magne