Abstract: In accordance with an embodiment, a noise shaping successive approximation analog-to-digital converter (ADC) includes: a digital-to-analog converter (DAC); a multi-input comparator with a first input coupled to the DAC; a multi-input amplifier having a first input coupled to the DAC, and a second input coupled to a second input of the multi-input comparator; and a first delay element having an input coupled to an output of the multi-input amplifier and an output coupled to the second input of the multi-input amplifier and to the second input of the multi-input comparator.

Abstract: A chip package includes a semiconductor chip and a substrate integrated waveguide. The substrate integrated waveguide includes a first metal layer, a second metal layer arranged over the first metal layer and a dielectric substrate arranged between the first metal layer and the second metal layer. The chip package further includes a slot formed in the second metal layer and a signal line electrically coupling the semiconductor chip and the second metal layer. The signal line crosses the slot when viewed in a direction perpendicular to the second metal layer.

Abstract: A wide band gap semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface along a vertical direction. The semiconductor device further includes a first region of a first conductivity type adjoining at least partially the first surface, a drift region of a second conductivity type, a highly doped second region adjoining the second surface, and a buffer region of the second conductivity type arranged between the drift region and the highly doped second region. A vertical profile of a doping concentration of the buffer region includes at least one step in a first section and is increasing approximately exponentially toward the second surface in a second section. The first section is arranged between the second section and the highly doped second region.

Abstract: According to one implementation a signal modulated onto an RF signal is supplied to an RF frontend of a receiver channel to generate a baseband signal, which is supplied to a processing circuit configured to attenuate the baseband signal. A noise parameter of an output signal of the processing circuit is measured while the power of the signal is a first power value and the attenuation is a first attenuation value, while the power is a second power value and the attenuation is the first attenuation value, while the power is the first power value and the attenuation is a second attenuation value, and while the power is set to the second power value and the attenuation is set to the second attenuation value, to obtain first, second, third, and fourth noise values. A value representing a noise figure of the receiver channel is determined based on the noise values.

Abstract: The present disclosure relates to a vehicle, a device, a computer program and a method for loading data, e.g., during a boot-up process. The method includes a reception of at least one character string for the verification of data. The method further includes a verification of data, wherein the verification of data includes a comprehensive check of the entire character string. The method further provides for a loading of data based on the check of the character string.

Abstract: A semiconductor device and method is disclosed. In one example, the semiconductor device includes a single first row of leads and a first chip carrier comprising a first electrically insulating layer arranged on the single first row of leads. At least one first semiconductor chip is mounted on the first electrically insulating layer, wherein the at least one first semiconductor chip is arranged over only the single first row of leads.

Abstract: A power module package may comprise a first metal oxide semiconductor field effect transistor (MOSFET), wherein the first MOSFET is configured to operate in a linear mode of operation when the first MOSFET is ON; a second MOSFET, wherein the second MOSFET is configured to operate in a non-linear mode of operation when the second MOSFET is ON, and wherein the first MOSFET and the second MOSFET are arranged in parallel; and a third MOSFET, wherein the third MOSFET is arranged to perform one or more sensing operations. The first MOSFET, the second MOSFET, and the third MOSFET may be arranged within a molding compound of the power module package.

Abstract: A device for an electronic cigarette. The device includes an enveloping element defining an interior, and an authentication device arranged in or on the enveloping element. The authentication device includes a planar loop antenna, and an authentication logic coupled to the planar loop antenna and configured to provide an authentication of the device vis-à-vis a control element of the electronic cigarette. The planar loop antenna is arranged in rolled form in the interior of the enveloping element or on the exterior of the enveloping element. The loop antenna comprises conduction sections in two opposite regions of the planar loop antenna, which extend in the longitudinal direction of the rolled loop antenna. The conduction sections of the opposite regions are arranged such that they are adjacent or overlap one another, with a result that their respective fields mutually compensate for one another at least partly.

Abstract: A bi-directional level shifter is described that combines an input/output (I/O) signal and a direction control signal into a single signal, thereby reducing the number of total pins. The combination of I/O and direction is encoded by different voltage levels, and thus no information is encoded by currents. This advantageously keep power consumption low compared to conventional designs. Moreover, because a predetermined voltage encoding is used in which the bi-directional level shifter is configured to detect and respond via hardware, transitions between data flow are detected very quickly.

Abstract: An electronic inhalation apparatus including a body having a chip module accommodating region which is at least partially surrounded by a folding structure which, when a chip module is accommodated in the chip module accommodating region, is bent around the chip module in order to fasten the chip module, wherein the folding structure has a folding region on at least one side of the chip module accommodating region extending a length that is less than a length of the respective side of the chip module accommodating region.

Abstract: A transistor device is provided including a first device load terminal, a second device load terminal and a device control terminal. The device includes a transistor. A first transistor load terminal is coupled to the first device load terminal, a second transistor load terminal is coupled to a second device load terminal, and a transistor control terminal is coupled to the device control terminal via a variable impedance element. An overload detection circuit switches the variable impedance element from a first state with lower impedance to a second state with higher impedance in response to detecting an overload condition.

Abstract: According to an embodiment, a device includes an interface configured to receive a first clock signal. A delay circuit is configured to add variable delays to the first clock signal based on a delay control signal to generate a second clock signal with variable delays. A delay control signal is generated by a controller clocked by the second clock signal. The device further includes a radio frequency path, and the device is configured to control the radio frequency path based on the second clock signal.

Abstract: A head-up display (HUD) system includes a first light transmitter configured to transmit first light beams on a first optical path; a second light transmitter configured to transmit second light beams on a second optical path; a two-dimensional (2D) scanner arranged on the first optical path and the second optical path; a first focus lens, arranged on the first optical path between the first light transmitter and the 2D scanner, configured to focus the first light beams onto a first focal point located at a first distance downstream from the 2D scanner along the first optical path; and a second focus lens, arranged on the second optical path between the second light transmitter and the 2D scanner, configured to focus the second light beams onto a second focal point located at a second, different distance downstream from the 2D scanner along the second optical path.

Abstract: A piezoresistive transistor device includes a first transistor cell having a first piezoelectric material body and a first piezoresistive material body arranged in a stacked configuration. A first electrical resistance of the first piezoresistive material body is dependent upon a voltage applied across the first piezoelectric material body by way of a pressure applied by the first piezoelectric material body to the first piezoresistive material body. A second transistor cell includes a second piezoelectric material body and a second piezoresistive material body arranged in a stacked configuration. A second electrical resistance of the second piezoresistive material body is dependent upon a voltage applied across the second piezoelectric material body by way of a pressure applied by the second piezoelectric material body to the second piezoresistive material body.

Abstract: A device for the magnetic-field-based determination of rotational and/or tilting movements, including a permanent magnet which is rotatable on both sides about a rotation axis and is tiltable on both sides along a tilting axis extending orthogonally to the rotation axis, two magnetic field sensors which are each configured to measure magnetic vector fields in at least two dimensions, namely at least parallel to the rotation axis and parallel to the tilting axis of the permanent magnet, wherein the magnetic field sensors are arranged on a common substrate and are arranged next to one another along a straight line parallel to the rotation axis of the permanent magnet, and wherein the magnetic field sensors are spaced apart from the outer surface of the permanent magnet.

Abstract: In some examples, this disclosure describes a method of measuring a temperature-dependent voltage drop over a temperature sensitive resistor. The method may comprise delivering a reference voltage to the temperature sensitive resistor in a first instance of time; determining an auto-ranging current through the temperature sensitive resistor while the reference voltage is delivered to the temperature sensitive resistor; determining a temperature measurement current based on the auto-ranging current; delivering the temperature measurement current to the temperature sensitive resistor in a second instance of time, wherein the second instance of time is after the first instance of time; and measuring the temperature-dependent voltage drop over the temperature sensitive resistor while the temperature measurement current is delivered to the temperature sensitive resistor.

Abstract: A method of manufacturing a semiconductor device in a semiconductor body is proposed. The method includes processing a semiconductor body at a first surface of the semiconductor body. The method further includes attaching the semiconductor body to a carrier via the first surface. The carrier includes an inner part and an outer part at least partly surrounding the inner part. The method further includes processing the semiconductor body at a second surface opposite to the first surface. The method further includes detaching the inner part of the carrier from the semiconductor body.

Abstract: A scanning system includes an oscillator structure configured to oscillate about an inner axis according to a first oscillation and oscillate about an outer axis according to a second oscillation; an inner frame mechanically coupled to the oscillator structure by a first support structure and a second support structure that extend along the inner axis; an outer frame mechanically coupled to the inner frame by a third support structure and a fourth support structure that extend along the outer axis; and an inner axis sensor positioned between the inner frame and the outer frame, wherein the inner axis sensor is configured to sense a first relative movement of the inner frame relative to the outer frame and generate a first sensor signal corresponding to the first relative movement, and wherein the first sensor signal is representative of a first angular position of the oscillator structure about the inner axis.

Abstract: In accordance with an embodiment, a method includes activating a semiconductor switch coupled between a supply node and an output node to apply an output voltage to an electrical load coupled to the output node, wherein a supply voltage is provided to the supply node; and performing a leakage current test, comprising: deactivating the semiconductor switch to isolate the electrical load from the supply node; after deactivating the semiconductor switch, checking whether a time that elapses until the output voltage falls below a first voltage level is less than a threshold value; and activating the semiconductor switch after the checking.

Abstract: The determination of a code word is proposed, wherein (i) a bit group of n memory cells is read and n states are determined therefrom, the n states being determined in a time domain for each of at least two k-out-of-n codes, the at least two k-out-of-n codes having different k, (ii) the fact of whether a code word is present is determined for each of the at least two codes on the basis of the states, and (iii) when at least one code word is present, the code word of the k-out-of-n code having the largest k is used.