Abstract: A package for an optical radiation device comprises a base structure having arranged thereon an optical radiation device, an optically transparent lid element bonded to the base structure defining a cavity between the base structure and the lid element, and a bond structure in a bonding region between the base structure and the lid element, wherein the bond structure is arranged to provide an adhesive bond between the base structure and the lid element, and wherein the bond structure comprises a diffusion layer having a gas diffusive material or gas diffusive structure for providing a gas diffusion path between the cavity and the surrounding atmosphere.

Abstract: A semiconductor device includes a transistor having macro cells. A plurality of the macro cells include a first macro cell and a second macro cell. Each first and second macro cell includes trenches formed in a first main surface of a semiconductor substrate. The trenches pattern the semiconductor substrate into mesas and include a conductive trench, with a conductive material in the conductive trench being electrically connected to a terminal. A majority of all trenches of the first macro cell exclusively run in a first direction. A majority of all trenches of the second macro cell exclusively run in a second direction different from the first direction. At least one first macro cell is arranged adjacent to at least one second macro cell.

Abstract: A semiconductor device includes a semiconductor portion with a first surface at a front side, wherein the semiconductor portion includes an active area, a termination structure laterally surrounding the active area, and a field-free region between the termination structure and a lateral outer surface of the semiconductor portion. The field-free region includes a probe contact region and a main portion. The probe contact region and the main portion form a semiconductor junction. A probe pad on the first surface and the probe contact region form an ohmic contact. A protection passivation layer on the first surface is formed on at least the termination structure and exposes the probe pad.

Abstract: According to this disclosure, a first driver circuit may be configured to output a first signal, and a second driver circuit configured to output a second signal, wherein the first signal and the second signal define the differential signal, e.g., for communication over a galvanic isolation barrier. In order to reduce power consumption and also facilitate effective communication in the presence of noise, each driver circuit may include multiple driver stages, and each driver circuit may be capable of using different driver stages at different instances of time, e.g., to change from a low power mode to high power mode, when necessary or desirable. The change from low power mode to high power mode, for example, may be based on detected noise on the communication channels.

Abstract: According to an exemplary embodiment, a semiconductor component includes a chip carrier, a semiconductor chip mounted on the chip carrier, and a chip package made of potting compound. The potting compound only partially surrounds the semiconductor chip, such that at least part of an upper side of the semiconductor chip is not covered by the potting compound. The semiconductor component further includes a clip that is mechanically connected to the upper side of the semiconductor chip.

Abstract: A magnetic field sensor chip includes an input terminal configured to receive an external bias current from an external current source; an internal current generator configured to split the external bias current into a plurality of internal bias currents, including a first internal bias current and a second internal bias current; a Hall sensor configured to be biased by the first internal bias current and set at a first operating point based on the first internal bias current, wherein the Hall sensor is further configured to generate a sensor signal based on a magnetic field and the first operating point; and an amplifier configured to be biased by the second internal bias current and set at a second operating point based on the second internal bias current. The amplifier is configured to amplify the sensor signal into an amplified sensor signal based on the second operating point.

Abstract: Accordingly, a smart switch device is described herein. In one embodiment, the device includes a first supply circuit configured to provide, based on a first supply voltage, an first voltage at a first output node; a second supply circuit configured to provide, based on a second supply voltage, a second voltage at a second output node; and a power management unit configured to provide a third voltage at a third output node based on both, the first supply voltage and the second supply voltage. The first, the second, and the third output nodes are coupled to a buffer capacitor. The device further includes a wakeup circuit configured to detect a wakeup event and further configured to enable the power management unit upon detecting a wakeup event.

Abstract: An RF amplifier circuit includes an amplifier and a feedback circuit. The feedback circuit includes a resistive feedback circuit coupled between an input and output of the amplifier and a shunt feedback circuit coupled between the output of the amplifier and a reference input. The resistive feedback circuit includes a first set of serially coupled resistors and a first set of switches. The first sets of resistors and switches are arranged in a ladder structure with each switch of the first set of switches configured to bypass one of the resistors of the first set of resistors. The shunt feedback circuit includes a second set of serially coupled resistors and a second set of switches. The second sets of resistors and switches are arranged in a ladder structure with each switch of the second set of switches configured to bypass one of the resistors of the second set of resistors.

Abstract: An IR (infrared) radiation source includes a sealed cavity structure enclosing a vacuum chamber having a low atmospheric pressure, wherein the sealed cavity structure includes a thermally and electrically insulating material for enclosing the vacuum chamber, heating filaments extending in the vacuum chamber between opposing electrode regions at opposing wall regions of the vacuum chamber, wherein the heating filaments are electrically connected in parallel, and wherein the heating filaments and the electrode regions have a highly electrically conductive material, and an optical isolation structure adjacent to the vacuum chamber for optically confining the IR radiation and providing a predominant propagation direction of the IR radiation.

Abstract: An electronic apparatus is disclosed. In one example, the electronic apparatus comprises a plurality of parallel electric paths, a plurality of electronic devices each arranged in a respective one of said plurality of parallel electric paths, and a plurality of current limiting circuits each arranged in an assigned one of said plurality of electric paths and in series with an assigned one of said plurality of electronic devices.

Abstract: A wafer, electronic component and method are disclosed. In one example, the wafer comprises an array of a plurality of electronic components. The separation frame separating neighboured electronic components, wherein the separation frame comprises a laser penetration affecting structure configured for locally affecting laser penetration when subjecting the separation frame to laser processing during stealth dicing.

Abstract: A semiconductor device has an analogue-to-digital converter (ADC) driven by a plurality of analogue input channels, each having an input pad and an input node connected to the input pad. The input node is connected to an input of the ADC through a respective switch. The analogue input channels comprise a high-side clamp transistor connected between the input node and a high-side power rail, a high-side comparator to clamp the input node to a high-side clamp voltage when the voltage at the input node exceeds a high-side comparison voltage, a low-side clamp transistor connected between the input node and a low-side power rail, and a low-side comparator for turning on the low-side clamp transistor to clamp the input node to a low-side clamp voltage when the voltage at the input node falls below a low-side comparison voltage.

Abstract: A magnetic field sensor having a semiconductor chip is proposed, the semiconductor chip having at least one magnetic field sensor element, the semiconductor chip being embedded in a semiconductor chip encapsulation, having a permanent magnet, the permanent magnet being embedded in a magnet encapsulation, wherein an interface between the semiconductor chip encapsulation and the magnet encapsulation extends as far as a free surface of the magnetic field sensor. Methods for producing a magnetic field sensor are furthermore disclosed.

Abstract: A semiconductor device includes a premolded leadframe, including a main surface, at least one electrical contact extending out of the main surface, and an opposite main surface arranged opposite to the main surface. The semiconductor device further includes a semiconductor package arranged on the main surface and laterally displaced to the at least one electrical contact of the premolded leadframe. The semiconductor package includes a semiconductor chip and at least one electrical contact. Surfaces of the at least one electrical contact of the premolded leadframe and the at least one electrical contact of the semiconductor package facing away from the main surface are flush.

Abstract: The disclosure relates to a voltage booster. The voltage booster includes an inductor, an output capacitor branch including an upper output capacitor and a lower output capacitor, at least one switching branch, each including a first upper switch and a first lower switch, an upper protection branch arranged between the inductor and the at least one switching branch and including an upper protection capacitor and an upper protection diode, an output voltage rectification branch arranged between the at least one switching branch and the output capacitor branch, and a lower protection diode arranged between the at least one switching branch and the output capacitor branch, wherein the upper protection branch is arranged in parallel with the first upper switch, and wherein the lower protection diode is arranged to form a lower protection branch with the lower output capacitor parallel to the first lower switch.

Abstract: Systems, methods, and circuitries are provided for handling non-synchronous interrupts in a time-synchronous network. In one example, a method for a primary device includes monitoring a communication channel during a series of configured packet time slots. Respective packet time slots in the series are mapped to respective secondary devices and successive packet time slots in the series are separated in time from one another by respective inter-packet time. The inter-packet times do not overlap any packet time slot. The method includes monitoring the communication channel during at least one common asynchronous interrupt time slot that occurs during a respective inter-packet time, and generating one or more control signals based on signals received during the packet time slots and the at least one common asynchronous interrupt time slot.

Abstract: A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type arranged adjacent to the first region at the second surface, the second region including first and second sub-regions, the second sub-region arranged between the first sub-region and the second surface; and a first electrode on the second surface and arranged directly adjacent to the first region and the second sub-region. The first electrode is electrically connected to the drift region by the first region. The first sub-region protrudes, along a first lateral direction, over an interface or a separation region between the second sub-region and the first region. A part of the first region is confined by the first sub-region and the first electrode along a vertical direction.

Abstract: The present disclosure relates to authenticity and data security for bus-based communication networks in a vehicle. The present disclosure teaches a protocol frame, a sender on data link layer, and a receiver on data link layer providing such authenticity and data security as well as a communication network in a vehicle employing the protocol frame, the sender and the receiver according to the present disclosure.

Abstract: Techniques and circuits for controlling a multi-phase electric motor and measuring current through the multi-phase electric motor without using a shunt resistor are described herein. A method may comprise controlling power switches of an inverter circuit to deliver a first phase current, a second phase current, and a third phase current to a multi-phase electric motor, and determining at least one of the first phase current, the second phase current, and the third phase current based on a first voltage drop over one of the power switches in a conducting mode and based on a temperature measurement, wherein the temperature measurement is based on a second voltage drop over a body diode of one of the power switches in a nonconducting mode during a dead time.

Abstract: The present disclosure proposes a coil sensor circuit including a sensor coil configured to provide an AC sensor signal, a feedforward amplifier stage configured to amplify the AC sensor signal to obtain an amplified sensor signal, a feedback amplifier stage coupled between an output and an input of the feedforward amplifier stage and configured to provide a control signal for cancelling a DC offset of the feedforward amplifier stage, and a switching circuit The switching circuit is configured to, during a first operational mode of the coil sensor circuit, couple the sensor coil to the input of the feedforward amplifier stage, and, during a second operational mode of the coil sensor circuit, decouple the sensor coil from the feedforward amplifier stage, and increase a gain of the coil sensor circuit with respect to the first operational mode.