Abstract: One exemplary disclosed embodiment comprises a two-terminal stacked-die package including a diode, such as a silicon diode, stacked atop a III-nitride transistor, such that a cathode of the diode resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a drain of the III-nitride transistor, and a second terminal of the package is coupled to an anode of the diode. In this manner, devices such as cascoded rectifiers may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages.

Abstract: The regenerative torque shifter is a system for electric/hybrid electric vehicles that includes a driver-operated control device mounted in the vehicle and a control unit linked to a motor controller. The driver sets a level of regenerative braking desired by manipulating the control device. Based on output from the control device, the control unit directs the motor controller to apply a corresponding level of regenerative braking action by varying the amount of load seen by the motor.

Abstract: A copper strap for a semiconductor device package having a contact electrically connected to a die electrode, a leg portion electrically connected to a lead frame, a web portion positioned between the contact and the leg portion and connected to the leg portion and a connection region connecting the web portion to the contact. The contact includes a body having a plurality of formations, each of the plurality of formations having a concavity and an opposing convexity positioned to generally face the die electrode.

Abstract: According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.

Abstract: A half-bridge circuit in accordance with an embodiment of the present application includes an input voltage terminal operable to receive an input voltage, a first bi-directional switch, a second bi-directional switch connected in series with the first bi-directional switch, wherein the first and second bi-directional switches are connected to the input voltage terminal such that the input voltage is provided across the first and second bi-directional switches and a controller operable to turn the first and second bi-directional switches ON and OFF such that a desired voltage is provided at an midpoint node positioned between the first bi-directional switch and the second bi-directional switch. The first bi-directional switch and the second bi-directional switch are high electron mobility transistors structured to allow for conduction in two directions when ON and to prevent conduction in any direction when OFF.

Abstract: According to one configuration, a multi-phase power supply adjusts a number of active phases based at least in part on a peak current supplied to a dynamic load. For example, a controller associated with the multi-phase power supply can monitor or receive a value indicative of a peak magnitude of current delivered by the multi-phase power supply to a dynamic load. The controller initiates comparison of the value to threshold information. Based at least in part on the comparison, the controller adjusts how many phases of the multi-phase power supply are activated to deliver the current delivered to the dynamic load. Thus, one embodiment herein is directed to controlling a multi-phase power supply based at least in part on a measured parameter such as peak current magnitude.

Abstract: According to an exemplary embodiment, an integrated start-up circuit for a power supply includes a converter, which in one embodiment can be a buck converter. In one embodiment, the buck converter includes a gate driver configured to drive a power switch, where the power switch is coupled across a DC bus node and a switching node of the buck converter. The power switch is configured to provide a start-up voltage to the buck converter from the DC bus node during start-up of the buck converter. In one embodiment, the buck converter includes a bootstrap switch coupled across the gate driver and a Vcc node and a Schottky diode coupled across the bootstrap switch and the switching node, where the start-up voltage is provided at the Vcc node through the bootstrap switch.

Abstract: According to an exemplary embodiment, a driver circuit for generating a reset pulse of an output waveform includes a plurality of ramp paths, each ramp path being configured to control the slope of the reset pulse. The driver circuit also includes a falling switch configured to selectively hold the output waveform low. The driver circuit further includes a switch controller for selectively enabling the plurality of ramp paths and the falling switch to generate the reset pulse. The switch controller can selectively enable the plurality of ramp paths responsive to a reference setting signal to select the slope of the reset pulse. The driver circuit can also generate a sustain pulse. The driver circuit is can generate the reset pulse and the sustain pulse by driving a transistor.

Abstract: In one embodiment, a method for detecting a load in a switched-mode power converter is provided. The switched-mode power converter includes high and low-side power switches which are configured to be driven respectively by high and low-side drive signals to provide a switching voltage. The high and low-side drive signals include a plurality of dead-time periods. The method includes monitoring a waveform of the switching voltage and at least one of the high and low-side drive signals. The monitored waveform of the switching voltage is compared to the monitored waveform of the at least one of the high and low-side drive signals to determine whether the switching voltage is high or low during at least one of the dead-time periods. A current measurement of the load is determined based on whether the switching voltage is high or low during the at least one of the dead-time periods.

Abstract: A hermetically sealed semiconductor package that includes a power semiconductor die having electrodes thereof electrically connected to the external surface mountable terminals of the package without the use of wirebonds.

Abstract: According to one embodiment, a synchronous buck converter comprises a multi-mode control circuit for detecting a load condition of a variable load, an output stage driven by the multi-mode control circuit, wherein the variable load is coupled to the output stage, and a feedback circuit connected between the output stage and the multi-mode control circuit. The multi-mode control circuit is configured to adjust a current provided by the output stage to the variable load based on the load condition. In one embodiment, the multi-mode control circuit selectably uses one of at least a first control mode and a second control mode according to the load condition, wherein the first control mode is a pulse-width modulation (PWM) mode selected for switching efficiency when the load condition is heavy and the second control mode is an adaptive ON-time (AOT) mode selected for switching efficiency when the load condition is light.

Abstract: A frequency modulation controller for use in controlling a switched mode power supply including an input terminal for receiving an input voltage and at least one switch selectively turned on and off to control the output voltage of the power supply in accordance with an embodiment of the present invention includes an analog to digital converter operable to convert a feedback signal indicative of the present output voltage into digital data, a digital conditioning unit operable to provide an error signal based on the digital data from the digital to analog converter for use in generating the frequency modulation signal and a digital to analog converter operable to provide the frequency modulation signal based on the error signal, wherein the frequency modulation signal indicates a desired duty cycle of the at least one switch to maintain a desired output voltage such that the at least one switch of the switched mode power supply is turned on and off in accordance with the desired duty cycle.

Abstract: According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source.

Abstract: According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to a common conductive clip, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the common conductive clip, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of the common conductive clip with the common conductive clip electrically and mechanically coupling the control source with the sync drain, where the common conductive clip has a conductive leg for providing electrical and mechanical connection to an output terminal leadframe.

Abstract: According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package further includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of a common conductive leadframe with the common conductive leadframe electrically and mechanically coupling the control source with the sync drain. The common conductive leadframe thereby serves as the output terminal.

Abstract: Some exemplary embodiments of a semiconductor package including a semiconductor device having electrodes on opposite major surfaces connectable to a planar support surface without a bondwire and a control electrode disposed in a corner position for reducing top-metal spreading resistance and device on-resistance have been disclosed. One exemplary structure comprises a semiconductor device having a first major surface including a first electrode and a second major surface including a second electrode and a control electrode, wherein the control electrode is disposed in a corner of the second major surface, and wherein the first electrode, the second electrode, and the control electrode are electrically connectable to a planar support surface without a bondwire. The pads of the device may be arranged in a balanced grid to maintain device stability during integration. A minimum gap distance between die pads allows the placement of vias in the planar support surface.

Abstract: One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad, a driver integrated circuit (IC) for driving the control and sync transistors, and conductive clips electrically coupling the top surfaces of the transistors to substrate pads such as leadframe pads. In this manner, the leadframe and the conductive clips provide efficient grounding or current conduction by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections.

Abstract: One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor, a sync transistor, a driver integrated circuit (IC) for driving the control and sync transistors, and a conductive clip extending from a sync drain on a top surface of the sync transistor to a control source on a top surface of the control transistor. The conductive clip may also connect to substrate pads such as a leadframe pad for current input and output. In this manner, the conductive clip provides an efficient connection between the control source and the sync drain by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections.

Abstract: One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor, a sync transistor, a driver integrated circuit (IC) for driving the control and sync transistors, and a conductive clip electrically coupling a sync drain of the sync transistor to a first leadframe pad of the package, wherein the first leadframe pad of the package is electrically coupled to a control source of the control transistor using a wirebond. The conductive clip provides an efficient connection between the control source and the sync drain by direct mechanical connection and large surface area conduction. A sync source is electrically and mechanically coupled to a second leadframe pad providing a high current carrying capability, and high reliability. The resulting package has significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections.

Abstract: One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a sync transistor with a top surface having a drain, a flip chip driver integrated circuit (IC) having an integrated control transistor, the flip chip driver IC driving the sync and control transistors, and a conductive clip electrically coupling the drain of the sync transistor to a common portion of the leadframe shared with a control source of the control transistor. In this manner, the leadframe and the conductive clip provide efficient current conduction by direct mechanical connection and large surface area conduction, significantly reducing package electrical resistance, form factor, complexity, and cost compared to conventional packages.