Abstract: A system and method that compensates for the effects of ambient light in a time of flight (TOF) sensor front end is provided. Moreover, a direct current (DC) correction loop is utilized at the front end, which removes a DC component from a current generated by the TOF sensor and accordingly prevents saturating the front end. The DC correction loop attenuates the DC component without adding significant thermal noise at a modulation frequency and provides a corrected signal to the front end circuitry. The corrected signal is processed and utilized to detect a position of an object within the optical field of the sensor.

Abstract: A DMT system for a half-duplex two-way link carries Internet protocol encoded video stream on a coaxial cable that also carries a baseband rendition of the same video stream. A plurality of downlink symbols modulated on a subband of subcarriers in a downlink signal are decoded. The symbols may carry data encoded on a subband using a constellation of QAM symbols assigned to the subband. Other subbands may be associated with different QAM constellations. Lower-order constellations of QAM symbols may be assigned to subbands that include higher-frequency subcarriers and higher-order constellations of QAM symbols may be assigned to subbands that include lower-frequency subcarriers. A block error correction decoder may be synchronized based on an identification of the first constellation of QAM symbols and information identifying boundaries between the plurality of downlink symbols.

Abstract: A method for manufacturing a plurality of optoelectronic apparatuses include attaching bottom surfaces of a plurality of packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between each POSD and its one or more neighboring POSD(s). A light reflective molding compound is molded around a portion each of the POSDs attached to the carrier substrate so that a reflector cup is formed from the light reflective molding compound for each of the POSDs. The light reflective molding compound can also attach the POSDs to one another. Alternatively, an opaque molding compound can be molded around each POSD/reflector cup to attach the POSDs/reflector cups to one another and form a light barrier between each POSD and its neighboring POSD(s). The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the POSDs are exposed.

Abstract: Linearizers can improve the linearity of power amplifiers by canceling or reducing amplitude of non-linearity components, (e.g., IM3, IM5, IM7, IM9, etc.) generated by the power amplifier. The linearizers can obtain samples of signals output by the power amplifier and process the samples to produce a canceling signal that is applied onto or into an output of the power amplifier. The canceling signal is generated such that when applied to the output of the power amplifier, the canceling signal cancels or reduces at least a portion of the non-linearity components produced by the power amplifier. A controller can improve the correction of the non-linearity components by executing one or more tuning algorithms and adjusting settings of the linearizer based on the results of the algorithm(s).

Abstract: A configurable photo detector circuit comprises a photo detector array including a plurality of photo detectors coupled to a plurality of amplifiers. A method for programming a detection pattern of the configurable photo detector circuit comprises selecting a first detection pattern for the photo detector array, generating first signals to create the first selected detection pattern, and applying the first generated signals to the photo detector circuit to implement the first selected detection pattern.

Abstract: An optical sensor includes a driver, light detector and echo canceller. The driver is adapted to selectively drive a light source. The light detector is adapted to produce a detection signal indicative of an intensity of light detected by the light detector. The echo canceller is adapted to produce an echo cancellation signal that is combined with the detection signal produced by the light detector to produce an echo cancelled detection signal having a predetermined target magnitude (e.g., zero). The echo canceller includes a coefficient generator that is adapted to produce echo cancellation coefficients indicative of distance(s) to one or more objects, if any, within the sense region of the optical sensor. The optical sensor can also include a proximity detector adapted to detect distance(s) to one or more objects within the sense region of the optical sensor based on the echo cancellation coefficients generated by the coefficient generator.

Abstract: A power converter can include an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The power converter can further include a controller integrated circuit (IC) formed on a different die which can be electrically coupled to, and co-packaged with, the PowerDie. The PowerDie can be attached to a die pad of a leadframe, and the controller IC die can be attached to an active surface of the first die such that the first die is interposed between the controller IC die and the die pad.

Abstract: Systems and methods for lead frame locking design features are provided. In one embodiment, a method comprises: fabricating a lead frame for a chip package, the lead frame having a paddle comprising a step-out bottom locking feature profile across at least a first segment of an edge of the paddle that provides an interface with a mold compound; etching the paddle to have at least a second segment of the edge having either an extended-step-out bottom locking feature profile or an overhanging top locking feature profile; and alternating first and second segments along the edge of the paddle.

Abstract: A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a voltage converter can include a lateral FET, a trench FET, and a trench guarded Schottky diode integrated with the trench FET. A method to form a voltage converter can include the formation of a trench FET gate, a trench guarded Schottky diode gate, and a lateral FET gate using a single conductive layer such as a polysilicon layer.

Abstract: Systems and methods provided herein decrease an idle channel noise floor and reduce power during an idle channel input for low power audio devices that include a digital pulse width modulation (PWM) amplifier having a noise shaper. An audio data signal is monitored for an idle channel condition. The noise shaper performs quantization of the audio data signal and uses noise shaper filter coefficients to shape noise resulting from the quantization. Predetermined values for the noise shaper filter coefficients are used to shape the noise resulting from quantization while the idle channel condition is not being detected. The values of the noise shaper filter coefficients are reduced so that the values move toward zeros, and the reduced values of the noise shaper filter coefficients are used to attenuate noise resulting from quantization, while the idle channel condition is being detected.

Abstract: Exemplary embodiments provide structures and methods for power devices with integrated clamp structures. The integration of clamp structures can protect the power device, e.g., from electrical overstress (EOS). In one embodiment, active devices can be formed over a substrate, while a clamp structure can be integrated outside the active regions of the power device, for example, under the active regions and/or inside the substrate. Integrating clamp structure outside active regions of power devices can maximize the active area for a given die size and improve robustness of the clamped device since the current will spread in the substrate by this integration.

Abstract: A photodetector includes one or more first photodiode regions that are covered by an optical filter configured to reject infrared (IR) light and that produce a first current (I1). The photodetector also includes one or more second photodiode regions that are covered by a light blocking material configured to reject visible and infrared light and that produce a second current (I2). The photodetector also includes one or more third photodiode regions that are not covered by the optical filter and are not covered by the light blocking material and that produce a third current (I3). Additionally, the photodetector includes circuitry configured to produce an output indicative of the first current (I1) or a scaled version of the first current (I1), minus the second current (I2) or a scaled version of the second current (I2), minus the third current (I3) or a scaled version of the third current (I3). The optical filter configured to reject IR light can be, e.g.

Abstract: A distributed power management system may include a communication bus and a plurality of POL (point-of-load) regulators coupled to the communication bus, and configured in a current sharing arrangement in which each POL regulator of the plurality of POL regulators has a respective output stage coupled to a common load and configured to generate a respective output current. Each POL regulator may have a respective phase in the current sharing configuration, and may transmit and receive information over the bus according to a bus communication protocol corresponding to the bus.

Abstract: A controller for a switched mode power supply converting an input voltage to a regulated output voltage according to one embodiment includes a control network and a detection network. The control network develops a pulse width control signal for regulating a level of the output voltage. The detection network detects a phase lag of the output voltage and adjusts operation of the control network based on the phase lag. The phase lag may be determined from any parameter incorporating phase shift, such as the output voltage or the compensation voltage. Various alternative schemes are disclosed for adjusting the control loop, including, but not limited to, adding slope compensation, adjusting window resistance or window current, adding adjustment current to adjust ripple voltage, adjusting ripple transconductance, and adjusting ripple capacitance. Digital and analog compensation adjustment schemes are disclosed.

Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

Abstract: A voltage converter includes an output circuit having a high side device and a low side device which can be formed on a single die (i.e. a “PowerDie”) and connected to each other through a semiconductor substrate. Both the high side device and the low side device can include lateral diffused metal oxide semiconductor (LDMOS) transistors. Because both output transistors include the same type of transistors, the two devices can be formed simultaneously, thereby reducing the number of photomasks over other voltage converter designs. The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with, the PowerDie.

Abstract: An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.

Abstract: A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.

Abstract: Provided herein are methods and systems that provide automatic compensation for frequency attenuation of a video signal transmitted over a cable. In accordance with an embodiment, a system includes an equalizer and a compensation controller. The equalizer receives a video signal that was transmitted over a cable, provides compensation for frequency attenuation that occurred during the transmission over the cable, and outputs a compensated video signal. The compensation controller automatically adjusts the compensation provided by the equalizer based on comparisons of one or more portions of the compensated video signal to one or more reference voltage levels.

Abstract: In accordance with an embodiment of the invention, there is an integrated circuit device having a complementary integrated circuit structure comprising a first MOS device. The first MOS device comprises a source doped to a first conductivity type, a drain extension doped to the first conductivity type separated from the source by a gate, and an extension region doped to a second conductivity type underlying at least a portion of the drain extension adjacent to the gate. The integrated circuit structure also comprises a second complementary MOS device comprising a dual drain extension structure.