Abstract: The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal comprising elongated nanostructure. The preferred embodiments also provide metal comprising elongated nanostructures obtained by the method according to preferred embodiments.

Abstract: In order to design on-chip interconnect structures in a flexible way, a CAD approach is advocated in three dimensions, describing high frequency effects such as current redistribution due to the skin-effect or eddy currents and the occurrence of slow-wave modes. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. These potentials are not uniquely defined, and in order to obtain a consistent discretization scheme, a gauge-transformation field is introduced. The displacement current is taken into account to describe current redistribution and a small-signal analysis solution scheme is proposed based upon existing techniques for static fields in semiconductors. In addition methods and apparatus for refining the mesh used for numerical analysis is described.

Abstract: Preferred embodiments provide a method for removing at least part of a copper comprising layer from a substrate, the substrate comprising at least a copper comprising surface layer. The method comprises in a first reaction chamber converting at least part of the copper comprising surface layer into a copper halide surface layer and in a second reaction chamber removing at least part of the copper halide surface layer by exposing it to a photon comprising ambient, thereby initiating formation of volatile copper halide products. During exposure to the photon comprising ambient, the method furthermore comprises removing the volatile copper halide products from the second reaction chamber to avoid saturation of the volatile copper halide products in the second reaction chamber. The method according to preferred embodiments may be used to pattern copper comprising layers.

Abstract: The invention relates to an N-bit digital-to-analogue converter (DAC) system, comprising—a DAC unit comprising an N-bit master DAC and a slave DAC, yielding a master DAC unit output signal and a slave DAC unit output signal, respectively, said N-bit master DAC having an output step size,—an adder unit combining the master DAC unit output signal and the slave DAC unit output signal, and—a means for storing correction values for at least the master DAC, said correction values being used by the slave DAC, whereby the DAC system is arranged for master DAC output corrections with a size in absolute value higher than half of the output step size.

Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.

Abstract: An electrical device comprises analog conversion circuitry having an input and an output. The electrical device is essentially provided for converting a first input signal within a first frequency range applied to the input to a first output signal within a second frequency range different from the first frequency range at the output. The electrical device further comprises a signal adding means for adding at least a portion of the first output signal as second input signal to the first input signal. The analog conversion circuitry is also capable of converting the second input signal, which is within the second frequency range, back to the first frequency range. Additionally, a characteristic deriving means is provided for deriving at least one characteristic of the electrical device from the frequency converted second input signal, which appears at the output of the analog conversion circuitry.

Abstract: The present disclosure is related to an interface device for providing access to a network to be monitored. The interface device includes a plurality of elements, the elements being sensors and/or actuators. A selection means is provided for selecting a subset of elements among the plurality of elements, each element of the subset being arranged for outputting and/or receiving a signal. A local memory is provided for storing the subset.

Abstract: A method and system for measuring contamination of a lithographic element is disclosed. In one aspect, the method comprises providing a first lithographical element in a process chamber. The method further comprises providing a second lithographical element in the process chamber. The method further comprises covering part of the first lithographical element providing a reference region. The method further comprises providing a contaminant in the process chamber. The method further comprises redirecting an exposure beam via the test region of the first lithographical element towards the second lithographical element whereby at least one of the lithographical elements gets contaminated by the contaminant. The method further comprises measuring the level of contamination of the at least one contaminated lithographical element in the process chamber.

Abstract: The present invention provides an electronic device for sensing and/or actuating, the electronic device comprising at least one microneedle (10) on a substrate (1), each of the microneedles (10) comprising at least one channel (7, 8) surrounded by an insulating layer (6). The present invention also provides a method for making such an electronic device for sensing and/or actuating.

Abstract: A method of configuring communication with a plurality of non-overlapping channels and between communication units with first communication units and second communication units is disclosed. The first communication units are privileged with respect to the second communication units, the second communication units having dynamically adaptable transceivers enabling channel switching, at least one of the second communication units being within the communication range of one of the first communication units. In one aspect, the method comprises determining information on the availability of the channels of the communication system for communication by the second communication units, based at least in part on information regarding whether the first communication units are active or not on the channels.

Abstract: The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes are modulated between no or substantially no nucleation, 2D nucleation, and 3D nucleation. The modulation is obtained by adjusting the surface treatment spatially applied over regions of the substrate, the growth conditions for the thin film materials used, and/or the specific thin film materials used. The growth conditions typically comprise the substrate temperature and the deposition flux. The modulation allows for spatially varying the interaction between the substrate material and the thin film materials deposited.

Abstract: The present disclosure relates to methods for forming a gate stack in a MOSFET device and to MOSFET devices obtainable through such methods. In exemplary methods described herein, a rare-earth-containing layer is deposited on a layer of a silicon-containing dielectric material. Before these layers are annealed, a gate electrode material is deposited on the rare-earth-containing layer. Annealing is performed after the deposition of the gate electrode material, such that a rare earth silicate layer is formed.

Abstract: The present disclosure provides a system for receiving signals over a power line distribution. Typically, problems of noise and interference are being solved at the receiver side. Systems of the present disclosure, however, are not limited to the receiver-side solution. Systems according to the present disclosure may also be used at the transmitter side. The receiver comprises a high pass filter, a preselect crossover filter, and an analog front-end receiver architecture.

Abstract: The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.

Abstract: A method and device for determining the quality of the interface surface between a layer of a dielectric material and the top surface of the semiconductor substrate are disclosed. In one aspect, the method comprises providing a semiconductor substrate with a top surface whereon a layer of a dielectric material is deposited thereby forming an interface surface, the surface of the layer of the dielectric material being or not in direct contact with the semiconductor substrate defining a top surface. A charge is then applied on a dedicated area of the top surface. A voltage Vs is measured on the top surface. The dedicated area is illuminated to define an illuminated spot. The photovoltage is measured inside and outside the determined illuminated spot during the illumination of the area.

Abstract: A method for improving run-time execution of an application on a platform based on application metadata is disclosed. In one embodiment, the method comprises loading a first information in a standardized predetermined format describing characteristics of at least one of the applications. The method further comprises generating the run-time manager, based on the first information, the run-time manager comprising at least two run-time sub-managers, each handling the management of a different resource. The information needed to generate the two run-time sub-managers is at least partially shared.

Abstract: A method is disclosed to measure the permeability of films or coatings towards solvents (e.g. water). First a substrate comprising an absorption or container layer is provided, preferably the material is a porous material. To study water permeability, the porous material is hydrophilic or is made hydrophilic by means of e.g. an anneal process. To study the permeability of the film or coating, the coating is deposited on top of the porous material. The substrate comprising the film or coating on top of the absorption or container layer is then brought into a pressurizable chamber subsequently filled with the gaseous substance of the solvent (e.g. water vapor). By increasing/decreasing the vapor pressure in the chamber between zero and the equilibrium vapor pressure of the solvent used, the permeability (penetration) of solvent through the film or coating can be determined. The amount of solvent that can penetrate through the film or coating can be measured by means of ellipsometry, mass spectrometry, etc.

Abstract: In one aspect, a virtually multi-threaded distributed instruction memory hierarchy that can support the execution of multiple incompatible loops in parallel is disclosed. In addition to regular loops, irregular loops with conditional constructs and nested loops can be mapped. The loop buffers are clustered, each loop buffer having its own local controller, and each local controller is responsible for indexing and regulating accesses to its loop buffer.

Abstract: A device and method for calibrating MIMO systems are disclosed. In one aspect, a calibration circuit comprises at least a first and a second input/output port, each arranged for being connected to a different transmitter/receiver pair of a multiple input multiple output (MIMO) system. The circuit further comprises at least a third and a fourth input/output port, each arranged for being connected to a different antenna. The circuit further comprises an attenuator having a first attenuator port and a second attenuator port. The circuit further comprises a first and a second non-reciprocal switch, the first switch being arranged for establishing a connection between the first input/output port and either the third input/output port or the first attenuator port, and the second switch arranged for establishing a connection between the second input/output port and either the fourth input/output port or the second attenuator port.

Abstract: Embodiments of the invention are related to methods for and devices for performing electrical spin detection. A method for spin detection of charged carriers having a spin and forming a flux in a medium is disclosed, the method comprises measuring a first current on a first contact on the medium that has a first spin selectivity, measuring a second current on a second contact on the medium that has a second spin selectivity, comparing the first measured current and the second measured current, and deriving the average or statistically relevant spin state of the flux of charge carriers. Corresponding devices are disclosed.