Abstract: A packaged device is obtained using an innovative package approach that allows integration of miniature planar magnetics into standard low-cost semiconductor packages (BGA, PDIP, SOIC, etc.) with electronic and electrical components, where those components can be C&W and/or SMD types. The packaged device includes a planar magnetic substrate having first and second dielectric layers, the first dielectric layer having a first winding defined thereon, the second dielectric layer having a second winding defined thereon. A magnetic component is provided in the substrate. A package material provided at least partly around the substrate and the magnetic component to protect the substrate and magnetic component. The magnetic component is an inductor or transformer. The packaged device further includes at least one semiconductor component provided on the first dielectric layer.

Abstract: A radio frequency (RF) generator includes a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to an AC power source via a rectifier; a first blocking capacitor provided between the positive rail and the load; a second blocking capacitor provided between the negative rail and the load; and a voltage regulator configured to output a given voltage to the first and second bridges, wherein the first and second blocking capacitors are configured to isolate the load from the AC power source.

Abstract: A vertical power semiconductor device comprises a substrate including a first layer that is a first conductivity type. A first conductive region is provided proximate an upper surface of the substrate, the first conductive region being a second conductivity type that is different from the first conductivity type. A first electrode is provided proximate the upper surface of the substrate and coupled to the first conductive region. A second electrode is provided proximate a lower surface of the substrate. A passivation structure including first and second dielectric layers provided over the upper surface of the substrate. One or more field plates of first type are provided between the first and second dielectric layers.

Abstract: A heating circuit for heating a conductive bowl includes a voltage source; a first heating coil provided between first and second nodes and being configured to heat the conductive bowl; a second heating coil provided between the second node and a third node and being configured to heat the conductive bowl; first capacitor and first switch provided in parallel between the first node and a fourth node; and second capacitor and second switch provided in parallel between the third node and the fourth node. The first and second heating coils define a circle-like shape having a center. The first and second heating coils are configured to be aligned to each other if one of the first and second heating coils is moved with respect to a line extending through the center of the circle-like shape.

Abstract: A heating circuit includes a first heating coil provided adjacent to an object to be heated. A first capacitor is provided in parallel to the first heating coil, the first capacitor being a resonant component. An inductor is coupled to the first heating coil and the first capacitor.

Abstract: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

Abstract: A circuit for transmitting signals includes a transformer having an input side and an output side, the input side having a first end and a second end. A first transistor is coupled to the first end of the transformer, the first transistor being configured to provide a first signal to the first end in response to an input signal transitioning to a first state. A second transistor is coupled to the second end of the transformer; the second transistor being configured to provide a second signal to the second end in response to the input signal transitioning to a second state. The output side is configured to output differential signals according to the first and second signals applied to the transformer.

Abstract: A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to an AC power source via rectifier; a first blocking capacitor provided between the positive rail and the load; and a second blocking capacitor provided between the negative rail and the load. The first and second blocking capacitors are configured to isolate the load from the AC power source.

Abstract: A fast switching diode includes an n? layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n? layer. The converted region includes platinum and has a first depth. The converted region has a platinum concentration that is substantially greater than an n-type dopant concentration in the converted region. First and second n+ regions are provided proximate the first and second edges of the n? layer, respectively, and extend from the upper surface of the n? layer to second and third depths, respectively. Each of the second and third depths is greater than the first depth to reduce leakage current. A first electrode is provided proximate the upper surface of the n? layer. A second electrode is provided proximate the lower surface of the n? layer.

Abstract: A radio frequency (RF) generator comprises a first half bridge including first and second power transistors; a second half bridge including first and second power transistors; an output node coupling the first and second half bridges and RF signals to a load; positive and negative rails coupled to a power source; a first blocking capacitor provided between the positive rail and the load; a second blocking capacitor provided between the negative rail and the load; and an offline rectification circuit configured receive an alternating current (AC) from an AC power source and output a direct current (DC) to the first and second bridges, wherein the first and second blocking capacitors are configured to isolate the load from the AC power source.

Abstract: A heatsink for a power device comprises an upper conductive plate providing a first surface; a lower conductive plate providing a second surface; a middle conductive plate provided between the upper and lower plates, the middle plate having a hollow portion and a solid portion, the hollow portion defining an area to receive coolant, wherein the power device is provided on the first or second surface, so that heat generated by the power device can be transferred to the coolant. The heatsink further comprises an input port coupled to the hollow portion of the middle plate to provide the coolant into the hollow portion; and an output port coupled to the hollow portion of the middle plate to remove the coolant from the hollow portion.

Abstract: An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

Abstract: A circuit for sensing a current includes a first upper resistor having a first end coupled to a first end of a sense resistor, the sense resistor being configured to receive an input current. A second upper resistor has a first end coupled to a second end of the sense resistor, so that the sense resistor defines a first potential between the first and second ends of the sense resistor. A first lower resistor is provided between the first upper resistor and the ground. A second lower resistor is provided between the second upper resistor and the ground. An amplifier has a first input node and a second input node, the first input node being coupled to a node between the first upper resistor and the first lower resistor. The second input node is coupled to a node between the to the second upper resistor and the second lower resistor. The first and second input nodes defines a second potential corresponding to the first potential.

Abstract: A method for making a power device produces a power device comprising active cells having designs that vary depending on where they are located in the active area. Design variations include structural variations and variations in the material used to produce the cells.

Abstract: A diode is defined on a die. The diode includes a substrate of P conductivity having an upper surface and a lower surface, the substrate having first and second ends corresponding to first and second edges of the die. An anode contacts the lower surface of the substrate. A layer of N conductivity is provided on the upper surface of the substrate, the layer having an upper surface and a lower surface. A doped region of N conductivity is formed at an upper portion of the layer. A cathode contacts the doped region. A passivation layer is provided on the upper surface of the layer and proximate to the cathode.

Abstract: A semiconductor power device comprises a semiconductor substrate. The substrate includes an N-type silicon region and N+ silicon region. An oxide layer overlies the N? type silicon region, the oxide layer formed using a Plasma Enhanced Chemical Vapor deposition (PECVD) method. First and second electrodes are coupled to the N? type silicon region and the N+ type silicon region, respectively. The oxide layer has a thickness 0.5 to 3 microns. The power device also includes a polymide layer having a thickness of 3 to 20 microns; a first field plate overlying the oxide layer; and second field plate overlying the polymide layer and the first field plate, wherein the second field plate overlaps the first field plate by 2 to 15 microns.

Abstract: A packaged device is obtained using an innovative package approach that allows integration of miniature planar magnetics into standard low-cost semiconductor packages (BGA, PDIP, SOIC, etc.) with electronic and electrical components, where those components can be C&W and/or SMD types. The packaged device includes a planar magnetic substrate having first and second dielectric layers, the first dielectric layer having a first winding defined thereon, the second dielectric layer having a second winding defined thereon. A magnetic component is provided in the substrate. A package material provided at least partly around the substrate and the magnetic component to protect the substrate and magnetic component. The magnetic component is an inductor or transformer. The packaged device further includes at least one semiconductor component provided on the first dielectric layer.

Abstract: A power device includes a substrate assembly including an upper surface and a lower surface. The substrate assembly includes a first layer and a second layer. The first layer overlies the second layer and has different conductivity than the second layer. A first electrode is provided proximate the upper surface. A second electrode is provided proximate the upper surface and is spaced apart from the first electrode. The second layer is configured to provide a current path between the first and second electrodes.

Abstract: A power semiconductor device includes a substrate having an upper surface and a lower surface. The substrate has a trench. First and second doped regions are provided proximate the upper surface of the substrate. A first source region is provided within the first doped region. A second source region is provided within the second doped region. A gate is provided between the first and second source regions. The gate includes a first portion extending downward into the trench. A depth of the trench is no more than a depth of the first doped region.

Abstract: A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.