Abstract: A method for heat-treating battery waste containing lithium includes: allowing an atmospheric gas containing oxygen and at least one selected from the group consisting of nitrogen, carbon dioxide and water vapor to flow in a heat treatment furnace in which the battery waste is arranged, and heating the battery waste while adjusting an oxygen partial pressure in the furnace.

Abstract: Provided is a method for producing lithium hydroxide, which can obtain lithium hydroxide from lithium sulfate with a relatively low cost. A method for producing lithium hydroxide from lithium sulfate includes: a hydroxylation step of allowing the lithium sulfate to react with barium hydroxide in a liquid to provide a lithium hydroxide solution; a barium removal step of removing barium ions in the lithium hydroxide solution using a cation exchange resin and/or a chelate resin; and a crystallization step of precipitating lithium hydroxide in the lithium hydroxide solution that has undergone the barium removal step.

Abstract: Provided is a method for removing a linear object, a device for removing a linear object, and a method for processing electronic/electrical equipment component waste, which can improve separation efficiency.

Abstract: Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Abstract: An indium phosphide substrate, the phosphide substrate has an angle ? on the main surface side of 0°<??120° for all of the planes A, the indium phosphide substrate has edge rounds on the main surface side and a surface side opposite to the main surface; wherein a chamfered width Xf from the wafer edge on the main surface side is 50 ?m or more to 130 ?m or less; wherein a chamfered width Xb from the wafer edge on the surface side opposite to the main surface is 150 ?m or more to 400 ?m or less; and wherein the indium phosphide substrate has a thickness of 330 ?m or moreto 700 ?m or less.

Abstract: Provided are a packaging container, a packaging method, and a method for carrying metal foil, which can suppress damage and deformation of the packaging container and enable stable carrying even if the packaging container is carried while suspending it in the midair. A packaging container made of corrugated cardboard includes: a pallet 2 having leg portions 21; a body frame 3 arranged on the pallet 2, the body frame 3 having bearing grooves 31 at end wall portions 32 opposing to each other; and a lid portion 4 provided on the body frame 3, wherein each of the leg portions 21 is arranged on an inner side than each of the end wall portions 23 of the pallet 2.

Abstract: An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 ?m or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 ?m or less.

Abstract: Provided is a sputtering target containing 0.05 at % or more of Bi, and having a total content of metal oxides of from 10 vol % to 70 vol %, the balance containing at least Ru.

Abstract: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.

Abstract: There is provided a more versatile technique that is useful for enhancing the sintering delay property of a metal powder. A metal powder surface-treated with at least one coupling agent comprising Si, Ti, Al or Zr, wherein a total adhesion amount of Si, Ti, Al and Zr is 200 to 10,000 ?g with respect to 1 g of the surface-treated metal powder, wherein a 1% by mass aqueous solution of the coupling agent indicates a pH of 7 or less, and wherein a sintering starting temperature is 500° C. or higher.

Abstract: Provided is a method for removing wire-form objects, a device for removing wire-form objects, and a method for processing electronic/electrical apparatus component waste, which can efficiently sort wire-form objects from sorting target objects having various shapes. The method for removing wire-form objects includes: arranging a filter in a vibrating sieve machine, the filter including a plurality of rods extending at distances in a feed direction of a raw material; and placing a raw material containing at least wire-form objects and plate-form objects onto the filter, and vibrating the filter to sieve out the wire-form objects under a sieve.

Abstract: Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (?? product) in a wide range, wherein the main surface has an area of 100 mm2 or more and has 50% or more of regions where the ?? product is 1.0×10?3 cm2/V or more based on the entire main surface, and a method for effectively producing the same.

Abstract: Provided is a method for removing wire-form objects, a device for removing wire-form objects, and a method for processing electronic/electrical apparatus component waste, which can efficiently sort wire-form objects from sorting target objects having various shapes.

Abstract: A sputtering target-backing plate assembly obtained by bonding a sputtering target and a backing plate using a brazing material, wherein a braze bonding layer which bonds the sputtering target and the backing plate contains a material having thermal conductivity that is higher than that of the brazing material in an amount of 5 vol % or more and 50 vol % or less, and a thickness of the braze bonding layer is 100 ?m or more and 700 ?m or less. An object is to prevent the seepage of the brazing material while maintaining the thickness of the braze bonding layer.

Abstract: A pure copper powder with a Si coating formed thereon, wherein a Si adhesion amount is 5 wtppm or more and 200 wtppm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si is 3 or less. An object of the present invention is to provide a pure copper powder with a Si coating formed thereon and a production method thereof, as well as an additive manufactured object using such pure copper powder capable of suppressing the partial sintering of the pure copper powder caused by the preheating thereof in additive manufacturing based on the electron beam (EB) method, and suppressing the loss of the degree of vacuum caused by carbon (C) during the molding process.

Abstract: Provided is a Corson alloy having improved bending workability and also having high dimensional accuracy after press-working. A copper alloy strip which is a rolling material, the rolling material containing from 0 to 5.0% by mass of Ni or from 0 to 2.5% by mass of Co, the total amount of Ni+Co being from 0.2 to 5% by mass; from 0.2 to 1.5% by mass of Si, the balance being copper and unavoidable impurities, wherein the rolling material has a surface satisfying the relationship: 1.0?I(200)/I0(200)?5.0; wherein an area ratio of Cube orientation {100} <001> is from 2 to 10% in EBSD measurement of a rolling parallel cross section; and wherein a ratio: (an average crystal grain size of Cube orientation {100} <001> of the rolling parallel cross section)/(an average crystal grain size of the rolling parallel cross section) is from 0.75 to 1.5.

Abstract: Provided is a Mg2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.

Abstract: Provided is a MgAl2O4 sintered body, which includes a relative density of the MgAl2O4 sintered body being 90% or higher, and an L* value in a L*a*b* color system being 90 or more. A method of producing a MgAl2O4 sintered body is characterized by that a MgAl2O4 powder is hot pressed at 1150 to 1300° C., and is thereafter subjected to atmospheric sintering at 1350° C. or higher. Embodiments of the present invention address the issue of providing a high density and white MgAl2O4 sintered body and a sputtering target using the sintered body, and a method of producing a MgAl2O4 sintered body.

Abstract: Provided are a raw material discharge device, a method of processing an electronic and electrical device component scrap, and a raw material discharging method of an electronic and electrical device component scrap, which are capable of efficiently discharging the raw material having various shapes, specific gravities and shapes in each fixed amount.

Abstract: Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a SORI value of 2.5 ?m or less, as measured with the back surface of the indium phosphide substrate facing upward.